• Journal of KIISE:Computer Systems and Theory
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• v.37 no.1
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• pp.19-26
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• 2010

In this paper, we adopt Storage Class Memory, which is next-generation non-volatile RAM technology, as part of main memory parallel to DRAM, and exploit the SCM+DRAM main memory system from the dependability perspective. Our system provides instant system on/off without bootstrapping, dynamic selection of process persistence or non-persistence, and fast recovery from power and/or software failure. The advantages of our system are that it does not cause the problems of checkpointing, i.e., heavy overhead and recovery delay. Furthermore, as the system enables full application transparency, our system is easily applicable to real-world environments. As proof of the concept, we implemented a system based on a commodity Linux kernel 2.6.21 operating system. We verify that the persistence enabled processes continue to execute instantly at system off-on without any state and/or data loss. Therefore, we conclude that our system can improve availability and reliability.

• 한국전자현미경학회:학술대회논문집
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• 2002.05a
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• pp.73-75
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.153.1-153
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• 1998

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.138-144
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• 1995

It is commonly believed that high permittivity materials will be necessary for future high density Gbit DRAMs. In a first part, we explain the choice of SrTiO3 by ECR MOCVD for Gbit-scale DRAMs. In a second part, after describing the ECR MOCVD system and presenting the requirements SrTiO3 thin films should meet for use in Gbit-scale DRAMs, the physical and electrical properties of srTiO3 thi film prepared by ECR MOCVD are then studied. A stacked capacitor technology, suitable for use in 1 Gbit DRAM, and comprising high permittivity SrTiO3 thin films prepared by ECR MOCVD at $450^{\circ}C$ on electron beam and RIE patterned RuO2/TiN storage nodes is finally described.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.291-294
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• 1998

The objective of this study is to deposited the preparation of STO dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the atmosphere during deposition and the substrate temperature. The resistivity properties of films deposited on silicon substrates were very high resistivity. Capacitance of the films properties were the highest value(1000pF) and dependent on substrate temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.417-422
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• 2001

The needs of new materials that substitute Si Oxide capacitor layer in high density DRAM increase. So in this paper, we choose the slim region 14/50/50 PLZT composition and fabricated thin films by PLD and estimated the characteristics for DRAM application. 14/50/50 PLZT thin films have crystallized into perovskite structure in the $600^{\circ}C$ deposition temperature and 200 mTorr Oxygen pressure. In this condition, PLZT thin films had 985 dielectric constant, storage charge density 8.17 $\mu$C/$\textrm{cm}^2$ and charging time 0.20ns. Leakage Current density was less than 10$^{-10}$ A/$\textrm{cm}^2$ until 5V bias voltage.

• Proceedings of the Korea Water Resources Association Conference
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• 2022.05a
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• pp.137-137
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• 2022

Evaluating interpolated rainfall uncertainty of hydrological models caused by different interpolation methods for basins where can not fully collect rainfall data are necessary. In this study, the adaptive MCMC method under effects of ILFs was used to analyze the interpolated rainfall uncertainty of the SURR model for Gunnam basin, Korea. Three events were used to calibrate and one event was used to validate the posterior distributions of unknown parameters. In this work, the performance of four ILFs on uncertainty of interpolated rainfall was assessed. The indicators of p_factor (percentage of observed streamflow included in the uncertainty interval) and r_factor (the average width of the uncertainty interval) were used to evaluate the uncertainty of the simulated streamflow. The results showed that the uncertainty bounds illustrated the slight differences from various ILFs. The study confirmed the importance of the likelihood function selection in the application the adaptive Bayesian MCMC method to the uncertainty assessment of the SURR model caused by interpolated rainfall.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.335-337
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• 1995

In this study, $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. $Pb(Zr_{0.52}Ti_{0.48})O_3$ stock solution was made and spin-coated on the $Pt/SiO_2/Si$ substrate at 4000[rpm] for 30[sec]. Coated specimens were dried at 400[$^{\circ}C$] for 10 [min]. The coating process was repeated 4 times and then heat-treated at 500$\sim$800[$^{\circ}C$], 1 hour. The final thickness of the thin films were about 3000[A]. The crystallinity and microstructure of the thin films were investigated for varing the sintering condition. The ferroelectric perovskite' phases precipitated under the sintering of 700[$^{\circ}C$] for 1 hours. In the $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films sintered at 700[$^{\circ}C$] for 1 hour, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively. $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitors having good dielectric and electrical properties are expected for the application to the dielectric material of DRAM.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.61-66
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• 2018

This research scrutinizes the self-annealing characteristics of copper used to metal interconnection for application of DRAM fabrication process. As the time goes after the copper deposited, the grain of copper is growing. It is called self-annealing. We use the electroplating method for copper deposition and estimate two kinds of electroplating chemicals having different organic additives. As the time of self-annealing is elapsed, sheet resistance decreases with logarithmic dependence of time and is finally saturated. The improvement of sheet resistance is approximately 20%. The saturation time of experimental sample is shorter than that of reference sample. We can find that self-annealing is highly efficient in grain growth of copper through the measurement of TEM analysis. The structure of copper grain is similar to the bamboo type useful for current flow. The results of thermal excursion characteristics show that the reliability of self-annealed sample is better than that of sample annealed at higher temperature. The self-annealed sample is not contained in hillock. The self-annealed samples grow until $2{\mu}m$ and develop in [100] direction more favorable for reliability.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.36S no.12
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• pp.67-75
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• 1999

In this paper, we present an ASIC(Application Specific Integrated Circuit) design of wavelet transform filter Wavelet transform is used in lots of application fields which include image compression, because it has an excellent energy compaction. The operation characteristic and performance of wavelet transform filter are analyzed by using verilog-HDL(Hardware Description Language). In this paper, the designed wavelet transform filter uses line memory to improve data processing rate. Generally, when it reads and writes data of DRAM by using Fast Page Mode, input and output processing is very fast in horizontal direction but substantially slow in vertical direction. The use of line memory solves this low speed processing problem. As a result, though the size of the chip is getting larger, processing time for an image frame becomes 4.66ms. Generally, since the limit of 1 frame processing time on the data of TV video is 33ms, so it is appropriate for TV video.