• Journal of Information Display
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• v.10 no.1
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• pp.33-36
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• 2009

A new hybrid silicon thin-film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low-temperature poly-Si (LTPS) and a-Si:H TFTs on the same substrate as a backplane of the active-matrix liquid crystal flat-panel display (AMLCD). LTPS TFTs were integrated into the peripheral area of the activematrix LCD panel for the gate driver circuit, and a-Si:H TFTs were used as a switching device of the pixel electrode in the active area. The technology was developed based on the current a-Si:H TFT fabrication process in the bottom-gate, back-channel etch-type configuration. The ion-doping and activation processes, which are required in the conventional LTPS technology, were thus not introduced, and the field effect mobility values of $4\sim5cm^2/V{\cdot}s$ and $0.5cm^2/V{\cdot}s$ for the LTPS and a-Si:H TFTs, respectively, were obtained. The application of this technology was demonstrated on the 14.1" WXGA+(1440$\times$900) AMLCD panel, and a smaller area, lower power consumption, higher reliability, and lower photosensitivity were realized in the gate driver circuit that was fabricated in this process compared with the a-Si:H TFT gate driver integration circuit

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.8
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• pp.25-32
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• 2012

In this paper, we propose a method for improving the performance of low complexity LS channel estimation for OFDM in fast time varying channels. The CE-BEM channel model used for the low complexity LS channel estimation has a problem on its own and deteriorates channel estimation performance. In this paper, we first use time domain windowing in order to remove the effect of ICI caused by data symbols. Then samples are taken from the results of the LS channel estimation and the effects of the windowing are removed from them. For resolving the defect of CE-BEM, the channel responses are recovered by interpolating the resultant samples with DPSS employed as basis functions the characteristics of which is well matched to the time variation of the channel. Computer simulations show that the proposed channel estimation method gives rise to performance improvement over conventional methods especially when channel variation is very fast and confirm that not only which type of functions is selected for the basis but how many functions are used for the basis is another key factor to performance improvement.

• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.224-227
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• 2004

We have studied local magnetization reversal by laser annealing in exchange biased NiFe/FeMn bilayer. Local magnetization reversal was performed by using the DPSS laser under external magnetic field of 600G. When the laser illuminated the patterned film with the power of above 300 mW during 15 min, a magnetoresistance (MR) curve with symmetric peaks at the opposite field was obtained due to the local reversal of exchange biasing. The direction of exchange anisotropy in the locally reversed region can be restored by local laser annealing under alternating magnetic field, even if its MR peak was reduced by the damage and interdiffusion. The magnetic domain structure of the locally reversed region was measured by MFM. The new domains were generated by laser annealing near the exposed area.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1019-1022
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• 2004

High performance p-ch poly-Si TFTs with excellent stability were developed. By using a frequency doubled DPSS CW laser, the a-Si on glass could be crystallized into one dimensional single crystalline silicon named as a sequential lateral crystallization (SLC) region. We fabricated p-ch TFTs on SLC region and the typical characteristic values of the TFTs were $u_{fe}$ = 180 $cm^2$/Vs, $V_{th}$ = -3 V, S.S. = 0.5 V/dec, and $I_{off}$ = 1 pA/um@ $V_d$ = -10V. It is found that the TFTs are very stable after bias stresses such as negative and positive gate biases, hot carrier bias and high current bias. These results indicate that the poly-Si in SLC region is suitable for system on glass (SOG) application.

• 제어로봇시스템학회:학술대회논문집
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• 1993.10b
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• pp.312-315
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• 1993

Optimal control theories based on the maximum principles have been evolved and applied to distributed parameter systems(DPSs) represented by partial differential equations (PDEs) and integral equations (IEs). This paper intends to show that an optimal control of a tubular reactor described by a one-dimensional partial differential equation was obtained using the distributed parameter control method for parabolic PDEs. In develping an algorithm which implements the calculation, the method of lines (MOL) was adopted through using a package called the DSS/2. For the tubular reactor system chosen for this paper, the optimal control method based on PDEs with the numerical MOL showed to be more efficient than the one based on IEs.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.2
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• pp.116-121
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• 2009

Distributed power systems (DPSs) has been widely used various industrial/military applications due to their various advantages. Furthermore, the "All electric" concept, in conjunction with DC DPS, appears to be more advanced and mature in the AEV(All-Electric Vehicular) industry. Generally, AEV carry many loads with varied functions. However, there may be large pulsed loads with short duty ratios which can affect the normal operation of other loads. In this paper, a converter with spilt capacitors and a simple adaptive controller is proposed as a active damping device to mitigate the voltage transients on the bus. The proposed converter allows the smaller capacitive storage. In addition, the proposed control approach has the advantage of requiring only one sensor and performing both the functions of mitigating the voltage bus transients and maintaining the level of energy stored. The control algorithm has been implemented on a TMS320F2812 Digital Signal Processor (DSP). Simulation and experimental results are presented which verify the proposed control principle and demonstrate the practicality of the circuit topology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.112-113
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• 2006

In this paper. we investigated a characteristic of holographic grating data erasure with non-polarized beam at amorphous chalcogenide As-Ge-Se-S thin film. A sample of holographic grating data was formed with DPSS laser for setup. Then, the erasure process was performed with He-Ne laser vertically at sample. As-Ge-Se-S(single layer). Ag/As-Ge-Se-S(double layer) and As-Ge-Se-S/Ag/As-Ge-Se-S(multi-layer) are manufactured to compare their characteristic of erasure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.83-84
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• 2006

For phase transition method, good recording sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, A retention time is very important part for phase transition. In our presentation wall, we chose Ge-Se-Te material to use a Se material which has good optical sensitivity than Sb. A Ge-Se-Te sample was fabricated and Irradiated with He-Ne laser and DPSS laser to investigate a reversible phase change by light.

• 제어로봇시스템학회:학술대회논문집
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• 1994.10a
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• pp.319-323
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• 1994

In this paper, we discuss a design method of iterative learning control systems for parabolic linear distributed parameter systems(DPSs). First, we discuss some aspects of boundary control of the DPS, and then propose to employ the Karhunen-Loeve procedure to reduce the infinite dimensional problem to a low-order finite dimensional problem. An iterative learning control(ILC) for non-square transfer function matrix is introduced finally for the reduced order system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.347-347
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• 2010

In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.