Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Optical Properties of $Ge_1Se_1Te_2$ Amorphous Chalcogenide Materials

$Ge_1Se_1Te_2$ 비정질 칼코게나이드 물질의 광학적 특성

  • Choi, Hyuk (Dept of Electronic Materials Eng. Kwangwoon Univ.) ;
  • Kim, Hyun-Koo (Dept of Electronic Materials Eng. Kwangwoon Univ.) ;
  • Cho, Won-Ju (Dept of Electronic Materials Eng. Kwangwoon Univ.) ;
  • Chung, Hong-Bay (Dept of Electronic Materials Eng. Kwangwoon Univ.)
  • 최혁 (광운대학교 전자재료공학과) ;
  • 김현구 (광운대학교 전자재료공학과) ;
  • 조원주 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2010.04.01
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Abstract

For phase transition method, good recording sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, A retention time is very important part for phase transition. In our presentation wall, we chose Ge-Se-Te material to use a Se material which has good optical sensitivity than Sb. A Ge-Se-Te sample was fabricated and Irradiated with He-Ne laser and DPSS laser to investigate a reversible phase change by light.

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