• Title/Summary/Keyword: DC23

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The Development of Collision Avoidance Algorithm for Unmanned Vehicle Using Ultrasonic Range Sensors

  • Mohammad, Rahmati;Kim, Jung-Ha
    • 제어로봇시스템학회:학술대회논문집
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    • 2001.10a
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    • pp.23.1-23
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    • 2001
  • The unmanned vehicle is composed of three parts the front & side sensor system for keeping the lane and avoiding obstacles, the acceleration & brake control system for longitudinal motion control, and the steering control system for the lateral motion control. Each system helps the unmanned vehicle of which should take notice of its location and recognize obstacles around the place by itself and make a decision how much fast to proceed according to circumstances. During the operation, the control strategy that the vehicle can detect obstacles and avoid collision on the road involves with vehicle velocity very much. Therefore, We have to define a traction system which is powered by DC motor so that, unmanned vehicle can control its velocity accurately. In this study, we find mechanical and ...

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Capacitance Value Analysis of Sub-module Test Circuit for MMC-based HVDC System (MMC 기반 HVDC 시스템용 서브모듈 시험회로의 커패시터 용량 분석)

  • Seo, Byuong-Jun;Park, Kwon-Sik;Jo, Kwang-Rae;Nho, Eui-Cheol;Kim, Heung-Geun;Chun, Tae-Won;Kim, Tae-Jin;Lee, Jong-Pil
    • The Transactions of the Korean Institute of Power Electronics
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    • v.23 no.6
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    • pp.433-439
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    • 2018
  • This study considers the design of a submodule test circuit for the modular multi-level converter (MMC)-based HVDC systems. A novel submodule test circuit is proposed to provide not only an AC but also a DC component to the submodule current. However, the current waveforms depend on the capacitor voltages. Therefore, determining the capacitance value of the test circuit is important. Finding a proper capacitance value is easy when the proposed analysis method is used. Simulation and experimental results show the usefulness of the proposed method.

CW Operation of $1.3{$mu}$ GaInAsP/p-InP BH Lasers at Room Temperature ($1.3{$mu}$ GaInAs P/p-InP BH형 레이저의 상온 연속발진)

  • Yoo, Tae Kyung;Chung, Gi Oong;Kwon, Young Se;Hong, Tchang Hee
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.23 no.6
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    • pp.780-788
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    • 1986
  • 1.3\ulcorner GaInAsP BH(Buried Heterostructure) lasers were fabricated on the p-InP substrate. Two step chemical etching processes and melt-back etching technique during 2nd epitaxy were used for BH active layer. BH laser had the threshold current, Ith, of 72mA(23\ulcorner), peak wavelength of 1.2937\ulcorner, nd of 10-20%, and To of 85K. They operated in single mode under pulse condition up to 1.4 Ith. CW(DC) operation was successfully performed at room temperature.

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Multi-Focus Image Fusion Using Transformation Techniques: A Comparative Analysis

  • Ali Alferaidi
    • International Journal of Computer Science & Network Security
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    • v.23 no.4
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    • pp.39-47
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    • 2023
  • This study compares various transformation techniques for multifocus image fusion. Multi-focus image fusion is a procedure of merging multiple images captured at unalike focus distances to produce a single composite image with improved sharpness and clarity. In this research, the purpose is to compare different popular frequency domain approaches for multi-focus image fusion, such as Discrete Wavelet Transforms (DWT), Stationary Wavelet Transforms (SWT), DCT-based Laplacian Pyramid (DCT-LP), Discrete Cosine Harmonic Wavelet Transform (DC-HWT), and Dual-Tree Complex Wavelet Transform (DT-CWT). The objective is to increase the understanding of these transformation techniques and how they can be utilized in conjunction with one another. The analysis will evaluate the 10 most crucial parameters and highlight the unique features of each method. The results will help determine which transformation technique is the best for multi-focus image fusion applications. Based on the visual and statistical analysis, it is suggested that the DCT-LP is the most appropriate technique, but the results also provide valuable insights into choosing the right approach.

Design and Implementation of Cartesian Loop Chip for the Narrow-Band Walky-Talky (협대역 무전기용 카테지안 루프 칩 설계 및 구현)

  • 정영준;최재익;오승엽
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.27 no.9C
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    • pp.871-878
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    • 2002
  • The cartesian loop chip which is one of key devices in narrow-band Walky-Talky transmitter using RZ-SSB modulation method was designed and implemented with 0.35 ㎛ CMOS technology. The reduced size and low cost of transmitter were available by the use of direct-conversion and cartesian loop chip, which improved the power efficiency and linearity of transmitter. In addition, low power operation was possible through CMOS technology. The performance test results of transmitter showed -23㏈c improvement of IMD and -30㏈c below suppression of SSB characteristic in the operation of cartesian loop chip (closed-loop). At that time, the transmitting power was about 37㏈m (5W). The main parameters to improve the transmitting characteristic and to compensate the distortion in feed back loop such as DC-offset, loop gain and phase value are interfaced with notebook PC to be controlled with S/W.

Wake-Up Receiver System Design Using the DGS Rectenna (DGS Rectenna를 이용한 Wake-Up 수신기 시스템 설계)

  • Choi, Tae-Min;Lee, Seok-Jae;Lee, Hee-Jong;Lim, Jong-Sik;Ahn, Dal;Han, Sang-Min
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.3
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    • pp.377-383
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    • 2012
  • In this paper, a new design of a planar rectenna system and its application to a wake-up receiver operating for incoming signal with a specified frequency are proposed for low-power sensor system applications. The planar and integrable rectenna system is designed with DGSs(Defected Ground Structures) at 2.4 GHz. The DGSs reject harmonic components of 4.8 and 7.2 GHz and eliminate 2.4 GHz fundamental frequency for DC-path filtering. The rectenna system has been evaluated for the conversion output voltages, and applied to the switching of a power supply at the low-power sensor receivers. The proposed system has been evaluated for the wake-up performance by testing a lownoise amplifier operation. From the experimental results, the proposed receiver system presents excellent operation performances.

A 70/140 GHz Dual-Band Push-Push VCO Based on 0.18-㎛ SiGe BiCMOS Technology (0.18-㎛ SiGe BiCMOS 공정 기반 70/140 GHz 듀얼 밴드 전압 제어 발진기)

  • Kim, Kyung-Min;Kim, Nam-Hyung;Rieh, Jae-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.2
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    • pp.207-212
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    • 2012
  • In this work, a 70/140 GHz dual-band push-push voltage controlled oscillator(VCO) has been developed based on a 0.18-${\mu}m$ SiGe BiCMOS technology. The lower band and the upper band oscillation frequency varied from 67.9 GHz to 76.9 GHz and from 134.3 GHz to 154.5 GHz, respectively, with tuning voltage swept from 0.2 to 2 V. The calibrated maximum output power for each band was -0.55 dBm and -15.45 dBm. The VCO draws DC current of 18 mA from 4 V supply.

Design of Ultra Wide Band MMIC Digital Attenuator with High Attenuation Accuracy (높은 감쇠 정확도를 가지는 초광대역 MMIC 디지털 감쇠기 설계)

  • Ju Inkwon;Yom In-Bok
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.2 s.105
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    • pp.101-109
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    • 2006
  • A broadband, DC to 40 GHz 5-bit MMIC digital attenuator has been developed. The ultra broadband attenuator has been achieved by adding transmission lines in the conventional Switched-T attenuator and optimizing the transmission line parameters. Momentum simulation was performed in design for accurate performance prediction at high frequencies and Monte Carlo analysis was applied to verify the performance stability against the MMIC process variation. The attenuator has been fabricated with $0.15\;{\mu}m$ GaAs pHEMT process. This attenuator has 1 dB resolution and 23 dB dynamic ranges. High attenuation accuracy has been achieved over all attenuation ranges and 40 GHz bandwidth with the reference state insertion loss of less than 6 dB at 20 GHz. The input and output return losses of the attenuator are better than 14 dB over all attenuation states and frequencies. The measured IIP3 of the attenuator is 33 dBm.

The Study of the Etch Characteristics of the HfAlO3 Thin Film in O2/BCl3/Ar Plasma (O2/BCl3/Ar 플라즈마를 이용한 HfAlO3 박막의 식각특성 연구)

  • Ha, Tae-Kyung;Woo, Jong-Chang;Kim, Chang-Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.12
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    • pp.924-928
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    • 2010
  • In this study, $HfAlO_3$ thin films using gate insulator of MOSFET were etched in inductively coupled plasma. The etch characteristics of the $HfAlO_3$ thin films has been investigated by varying $O_2/BCl_3$/Ar gas mixing ratio, a RF power, a DC bias voltage and a process pressure. As the $O_2$ concentration increases further, $HfAlO_3$ was redeposited. As increasing RF power and DC bias voltage, etch rates of the $HfAlO_3$ thin films increased. Whereas, as decreasing of the process pressure, etch rates of the $HfAlO_3$ thin films increased. The chemical reaction on the surface of the etched the $HfAlO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS). These peaks moved a binding energy. This chemical shift indicates that there are chemical reactions between the $HfAlO_3$ thin films and radicals and the resulting etch by-products remain on the surface.

Degradation Properties of ZnO Surge Arresters Due to Lightning Impulse Currents (뇌임펄스전류에 의한 ZnO 피뢰기의 열화특성)

  • Lee, Su-Bong;Lee, Bok-Hee
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.23 no.4
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    • pp.79-85
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    • 2009
  • This paper describes the degradation properties of ZnO surge arresters impressed by lightning impulse currents. To investigate the deterioration behaviors of ZnO surge arresters due to lightning surges, the 8/20[${\mu}s$], 2.5[kA] standard lightning impulse currents were injected to the ZnO surge arrester under test. The power frequency AC and DC leakage currents flowing through the ZnO surge arresters with and without the injection of lightning impulse currents were measured. As a result, the leakage currents are increased and the asymmetry of the AC leakage current is pronounced as the number of injection of the impulse current increases. The ZnO grain of the surge arrester without the injection of lightning surges are uniform but the ZnO grain of the ZnO surge arrester with the injection of lightning impulse currents are deformed. Also, it was found that the decrease of the $Bi_2O_3$ due to the lightning impulse current leads to the lack of grain boundary layer and the current concentrated by the lack of grain boundary layer play an important role to degrade nonlinear property of ZnO surge arrester blocks.