Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Study of the Etch Characteristics of the HfAlO3 Thin Film in O2/BCl3/Ar Plasma

O2/BCl3/Ar 플라즈마를 이용한 HfAlO3 박막의 식각특성 연구

  • Ha, Tae-Kyung (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
  • 하태경 (중앙대학교 전자전기공학부) ;
  • 우종창 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • Received : 2010.07.12
  • Accepted : 2010.11.05
  • Published : 2010.12.01
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Abstract

In this study, $HfAlO_3$ thin films using gate insulator of MOSFET were etched in inductively coupled plasma. The etch characteristics of the $HfAlO_3$ thin films has been investigated by varying $O_2/BCl_3$/Ar gas mixing ratio, a RF power, a DC bias voltage and a process pressure. As the $O_2$ concentration increases further, $HfAlO_3$ was redeposited. As increasing RF power and DC bias voltage, etch rates of the $HfAlO_3$ thin films increased. Whereas, as decreasing of the process pressure, etch rates of the $HfAlO_3$ thin films increased. The chemical reaction on the surface of the etched the $HfAlO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS). These peaks moved a binding energy. This chemical shift indicates that there are chemical reactions between the $HfAlO_3$ thin films and radicals and the resulting etch by-products remain on the surface.

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References

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