• Title/Summary/Keyword: DC-Sputtering

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Study on IZO films deposited by magnetron sputtering at low temperature and its application for flexible display (마그네트론 스퍼터링법으로 저온 증착한 IZO 박막의 특성 및 유연성 소자 적용)

  • Park, Mi-Rang;Gang, Jae-Uk;Kim, Do-Geun;Lee, Geon-Hwan;Song, Pung-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2007.11a
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    • pp.99-100
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    • 2007
  • 마그네트론 스퍼터링법을 이용하여 $100^{\circ}C$미만의 저온에서 플라스틱 기판위에 IZO(Indium Zinc Oxide) 박막을 증착하였다. 저전압 방전을 위하여 RF 중첩형 DC 마그네트론 스퍼터링 방법을 사용하였으며, 인가 power에 따른 IZO 박막의 전기적, 광학적 특성과 굽힘에 대한 신뢰성을 평가하였다. 플라스틱 기판이 변형되지 않도록 $90\;^{\circ}C$ 이하의 범위에서 기판온도와 산소분압을 변화하여 $2{\times}10^{-4}$ ${\Omega}$ cm의 비저항, 95 % 이상의 가시광 투과도를 가지는 IZO 박막을 증착할 수 있었다. 또한 본 연구에서 비가열의 플라스틱기판 위에 증착한 IZO 투명전극을 이용하여 유연성 OLED를 제작하였으며, 제작된 소자의 특성은 13.7 %의 최대양자 효율과 32.7 lm/W의 전력효율을 보였다.

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Deposition of IGZO thin film using DC and ICP at magnetron sputtering system

  • Lee, C.H.;Kim, K.N.;Kim, T.H.;Lee, S.M.;Bae, J.W.;Yeom, G.Y.
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2015.05a
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    • pp.95-95
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    • 2015
  • IGZO (Indium Gallium Zinc Oxide) 물질은 기존에 사용되던 Amorphous Silicon에 비해 전자 이동도가 더욱 빠르기 때문에 차세대 디스플레이 재료로서 각광받고 있으며, 이러한 빠른 전자 이동도는 디스플레이 소자에 있어서 매우 중요한 요소 중 하나이다. 이를 향상시키기 위하여 본 연구에서는 ICP(inductively coupled plasma) antenna를 이용하여 rf power와 requency를 변화함으로써 박막 증착 시 발생되는 플라즈마의 특성을 조절하여, 박막의 특성을 조절하고자 했다. 이렇게 증착된 IGZO 박막은 Hall Effect Measurement를 이용하여 전기적 특성을 분석하였으며, XPS(x-ray photoelectron spectroscopy)를 이용하여 박막의 조성을 분석하였다.

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The Effects of Surface Pretreatments on Adhesion Strength of TiN Films by DC Magnetron Sputtering (표면전처리가 반응성 스퍼터링법으로 제조한 TiN 코팅층의 밀착력에 미치는 영향)

  • 김흥윤;백운승;권식철;김규호
    • Journal of Surface Science and Engineering
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    • v.26 no.5
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    • pp.225-234
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    • 1993
  • Titanium nitride coatings were deposited onto SUS304 stainless steel substrates pretreated by mechanical scrubbing, chemical etching at 50% HCl solution and Ar ion etching. Adhesion strength were measured by scratch tester and confirmed by SEM with EDS. Adhesion strength of Ar ion etched substrate was 10 to 15 times higher than that of mechanical scrubbed or chemical etched substrate. Ar ion etching brought about an uniform and fine spherical shaped surface, while chemical etching gave rise to a rough and irregular surface on SEM micrograph. It was suggested that higher adhesion strength might be caused by anchoring effect of Ar ion etched surface prior to TiN deposition.

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Characteristics of Ga-doped ZnO transparent thin films by using multilayer (다층박막을 이용한 Ga-doped ZnO 투명전도막의 특성)

  • Kim, Bong-Seok;Hwang, Hyun-Suk;Lee, Kyu-Il;Jeong, Kyu-Won;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.313-314
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    • 2007
  • Ga-doped ZnO(GZO) multilayer coatings were prepared on glass by DC sputtering. Optimization of the deposition conditions of both AZO and Au layers were performed for better electrical and optical characteristics. The properties of multilayer were affected by the deposition process of both GZO and Au layers. The best multilayer coating exhibits low resistivity of $2.72{\times}10^{-3}\;{\Omega}-cm$ and transmittance of 77%. From these results, we can confirm a possibility of the application as transparent conductive electrodes.

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Capacitance - Voltage Characteristics of MIS Capacitors Using Carbon Nitride Films (질화탄소막을 이용한 MIS 캐패시터의 정전용량 - 전압 특성)

  • Ha, Se-Geun;Lee, Ji-Gong;Lee, Sung-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.84-87
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    • 2003
  • Carbon nitride ($CN_x$) films were prepared by reactive RF magnetron sputtering system with DC bias at various deposition conditions and the electrical properties were investigated. The films were characterized by fourier transform infrared (FTIR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The metal-insulator-semiconductor (MIS) capacitor which has $Al/CN_x/Si$ structure was designed and fabricated to investigate the capacitance-voltage (C-V) characteristics. Dielectric constant of carbon nitride films is very small.

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Structural and electrical properties of the NiCr thin film resistors deposited at various temperatures on $SiO_2$/Si substrate

  • Phuong, Nguyen Mai;Cuong, Nguyen Duy;Kim, Dong-Jin;Kang, Byoung-Don;Kim, Chang-Soo;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.337-338
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    • 2006
  • The 200 nm thick-NiCr films grew on $SiO_2$/Si substrates at various deposition temperatures by a dc magnetron co-sputtering technique were characterized for the variation of film texture. The resistivity of the films decreases with increasing deposition temperature and temperature coefficient of electrical resistance (TCR) varies from negative value to a positive one with increasing deposition temperature. The NiCr films deposited at $300^{\circ}C$ exhibit 4 ppm/K being near zero TCR, resulting in TCR suitable for $\pi$-type attenuator applications.

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Nano Wear Behavior of a-C Films with Variation of Surface Roughness (표면거칠기의 변화에 따른 a-C 박막의 나노마멸 거동)

  • 채영훈;장영준;나종주;김석삼
    • Tribology and Lubricants
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    • v.20 no.3
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    • pp.125-131
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    • 2004
  • Nano-wear behavior of amorphous carbon films was studied by Atomic Force Microscopy. The a-C films are deposited on Si(100) substrate by DC magnetron sputtering method. The influences of different surface roughness on the nano-wear are investigated. Nano-wear tests were carried out using a very sharp diamond coated tip. Its spring constant was 1.6 N/m and radius of curvature was 110 nm. Normal force used in the wear tests ranged 0 to 400 nN. It was found that surface depression occurred during scratching because of plastic deformation and abrasive wear (cutting St ploughing). Wear depth increased linearly with normal force. Changing the surface roughness variables according to the bias pulse control, the less surface roughness decreased the wear depth. The thickness did not affect the wear resistance.

Linear facing target sputtering을 이용하여 PET 기판위에 성막한 AZO 박막의 특성 연구

  • Sin, Hyeon-Su;Jeong, Jin-A;Kim, Han-Gi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.223-223
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    • 2010
  • 본 연구에서는 Al-doped ZnO (AZO) 박막을 linear facing target sputter (LFTS) 시스템을 이용하여 성막 하였고 박막의 특성을 분석하였다. LFTS 시스템은 마주보는 두 AZO 타겟 사이에 고밀도의 플라즈마를 구속시켜 플라즈마 데미지 없이 산화물 박막을 성막 시킬 수 있는 장치이다. LFTS로 성막된 AZO 박막의 인가된 DC 파워에 따른 전기적 특성을 분석하기 위해 four-point probe와 Hall measurement 장비를 이용하여 분석을 진행 하였으며, 광학적 특성 분석을 위해 UV/Vis spectrometer 장비를 이용하여 분석하였다. AZO 박막의 구조적, 표면적 특성을 분석하기 위해 X-ray diffraction(XRD) 및 scanning electron microscope(SEM)을 사용하여 상온에서 성막된 AZO 박막의 특성을 관찰 하였다. 또한 AZO 박막의 PET 기판과의 접합성 및 구부림 시의 안정성을 평가하기 위해 bending test를 진행 하였다. 최적화된 AZO 박막으로부터 기판에 성막 중 열처리공정이나 후 열처리 공정의 진행 없이 35 ohm/square의 낮은 면저항과 약 80 % 이상의 투과율을 얻을 수 있었다. LFTS 시스템을 이용하여 낮은 공정온도에서 AZO 박막을 성막 하였음에도 불구하고 낮은 저항과 높은 투과도 특성을 나타내고 있어 기존의 투명 박막을 대체 할 수 있는 가능성을 제시하였다

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Microstructure and Mechanical Properties of Cr-Al-Si-N Coatings for Wear Resistant and Structural Applications (내마모 구조 코팅용 Cr-Al-Si-N 코팅막의 미세구조와 기계적 특성에 관한 연구)

  • Kang, Dong-Shik;Kim, Kwang-Ho
    • Korean Journal of Materials Research
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    • v.15 no.11
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    • pp.730-734
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    • 2005
  • Cr-Al-Si-N coatings were deposited on WC-Co substrates by a hybrid coating system of arc ion plating and DC magnet :on sputtering technique in $N_2/Ar$ mixture. The Cr-tll-Si-N coatings were synthesized with different Si contents. Their microstructure and mechanical properties were systematically investigated. The average size of crystallites largely decreases with the increase of Si content compared with Cr-Al-N. The microhardness of Cr-Al-Si-N coatings largely increases from 24 to 55 GPa. The enhanced hardness is believed to originate from the microstructural change by the fine composite microstructure of Cr-Al-N coatings with Si addition. The average friction coefficient of Cr-Al-Si-N coatings decreases from 0.84 to 0.45 with increasing Si content up to $16\;at.\%$.

The effects of Cu thin films sputter deposited at 5 and 100 mtorr on the adhesion between Cu/Cr film and polyimide (5, 100 mtorr의 증착압력에서 스퍼터 증착한 구리박막층이 Cu/Cr 박막과 폴리이미드 사이의 접착력에 미치는 영향)

  • 조철호;김영호
    • Journal of Surface Science and Engineering
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    • v.29 no.3
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    • pp.157-162
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    • 1996
  • The effects of microstructural change on the adhesion strength between Cu/Cr film and polyimide have been studied. Cr films (50 nm thick) and Cu films (500 or 1000 nm thick) were deposited on polyimide by DC magnetron sputtering. During Cu deposition the Ar pressure was 5 or 100 mtorr. The microstructure was observed by SEM and the adhesion was measured by T-peel test. Plastic deformation of peeled metal strips was characterized quantitatively by using XRD technique. The film in which Cu is deposited at 100 mtorr has higher adhesion strength than the film in which Cu is deposited at 5 mtorr. And in the film with same deposition pressure of 100 mtorr, the adhesion strength is increased as the deposited thickness increases from 500 to 1000 nm. The adhesion change of Cu/Cr can be interpreted as the difference in plastic deformation.

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