• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.122-127
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• 1998

Conductivities of polycrystalline ceria doped with several rare earth oxides were measured by AC admittance and DC four probe method. The conductions were separated into grain and grain boundary contributions using the complex admittance technique as well as grain size dependence of conductivity. The grain size dependence of polycrystalline conductivity, which can be adequately described by the so-called brick layer model, appears to give a more reliable measure of the grain conductivity compared to the complex admittance method. Polycrystalline resistivity(1/conductivity) increases linearly with the reciprocal of grain size. The intercept of resistivity vs. inverse grain size plot gives a measure of the grain resistivity and the slope gives a measure of the grain boundary resistivity. It was also noted that errors involved in the analysis of experimental data may be different between the complex admittance method and the impedance method. A greater resolution of the spectra was found in the complex admittance method, insofar as the present work is concerned, suggesting that the commonly used equivalent circuit may require re-evaluation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.203-206
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• 1996

In order to investigate the infulence of sodium chloride on the volume resistivity characteristics of transformer oils in temperature range of 20~100[$^{\circ}C$] were made researches. The geometrical capacitance of electrode with coaxial cylindrical shape for measuring the volume resistivity was 16[pF], and hoghmegaohm meter model VMG-1000 was used, the applying voltage were DC 100, 250, 500 and 1000[V]. The classification for the physical properties of specimen by FTIR Spectroscopy was carried out. AS a result of experiment, the value for volume resistivity is increased with sodium chloride contents.

• Journal of the Semiconductor & Display Technology
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• v.11 no.3
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• pp.63-67
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• 2012

The films were deposited at evaporator system and were annealed at heat treatment. The films had a dense microstructure with fine grains. The electrical properties of the films were dramatically controlled with annealing. Samples Preparation were analyzed in term of positive temperature coefficient of Resistivity Samples were made in the substrate tempera-true of $400^{\circ}C$ deposition time of 10 hours, and forward power of 210watt. R-T(resistivity-temperature) Characteristics of the samples were investigated as a function of the substrate type and the ambient temperature. The resistivity of the thin film specimens was compared with that of the bulk type specimens. By using RF/DC magnetron sputtering system, we obtained lower resistivity in the thermistor with thin $BaTiO_3$ film than that in the bulk type thermistor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.290-293
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• 1997

In this paper, volume resistivity is studied so that the electrical properties for transformer oil due to the stirring temperature of BTA is investigated. A measurement of volume resistivity using the VMG-1000 highmegohm meter is recorded after 10 minutes when the each voltage, and DC 100[V], 250[V], 500[V] and 1000[V] is applied, according to the step voltage appliaction method. A coaxial cylindrical liquid electrode to measure volume resistivity of specimen is used, and its geometric capacitance is 16[pF].

• Korean Journal of Metals and Materials
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• v.49 no.3
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• pp.256-263
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• 2011

We have synthesized Al-Co/AlN-Co multilayer films with different layer thicknesses by using a Two-Facing Target Type dc Sputtering (TFTS) system. The deposited films were annealed isothermally at different temperatures and their microstructure, magnetic properties and resistivity were investigated. The magnetization of the as-deposited films was found to be very small, irrespective of layer thickness. It was found that the annealing conditions and layer thickness ratio of Al-Co to AlN-Co (LTR) were able to control the microstructure, as well as the physical properties of the prepared films. The resistivity and magnetization increased and the coercivity decreased with a decreasing LTR. A high resistivity of 2500 ${\mu}{\Omega}-cm$, a magnetization of 360 $emu/cm^3$, and a coercivity of 5 Oe were obtained for the films with LTR=0.175.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.244-247
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• 1995

Physical, electrical and optical properties of Aluminum(Al) thin films were investigated in order to establish the optimum sputtering parameters in mirror reflection films. Al. thin films deposited on corning glass substrate by DC magnetron sputtering were grown as a variation of the input power, operation pressure and deposition time. The properties of the Al thin films have been discussed by deposition rate, SEM, XRD, sheet resistivity, resistivity and reflectance. Al thin films were obtained at the deposition conditions as follows: operating pressure, 3 mtorr; DC input power desnsitiy, 3W/$\textrm{cm}^2$.

• Journal of Sensor Science and Technology
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• v.16 no.3
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• pp.229-233
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• 2007

The indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. The ITO thin films deposited at room temperature because CR39 substrate its glass-transition temperature is $130^{\circ}C$. The ITO thin films used bottom and top electrode and for organic thin film transparent transistors (OTFTs). The ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300-800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of the ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300-800 nm) measured without post annealing process and a low resistivity value $9.83{\times}10^{-4}{\Omega}cm$ was measured thickness of 300 nm. All fabrication process of ITO thin films did not exceed $80^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.554-557
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• 2001

Indium Tin Oxide(ITO) thin films have been fabricated by the dc magnetron sputtering technique with a target of a mixture $In_{2}O_{3}$(90mol%) and $SnO_{2}$(10mol%). We prepared ITO thin films with substrate temperature 200 to $400^{\circ}C$ and annealing temperature 200 to $500^{\circ}C$. Good polycrystalline-structured ITO films with a low electrical resistivity of $3.4{\times}10^{-4}\Omega{\cdot}cm$ have been obtained. The visible light transmittance of all obtained films was over 80 %.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.554-557
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• 2001

Indium Tin Oxide(ITO) thin films have been fabricated by the dc magnetron sputtering technique with a target of a mixture In$_2$O$_3$(90mo1%) and SnO$_2$(10mo1%). We prepared ITO thin films with substrate temperature 200 to 400$^{\circ}C$ and annealing temperature 200 to 500$^{\circ}C$ food polycrystalline-structured ITO films with a low electrical resistivity of 3.4${\times}$10$\^$-4/ Ω$.$cm have been obtained. The visible light transmittance of all obtained films was over 80 %.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.700-705
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• 1997

Transparent conducting indium tin oxide (TC-ITO) thin films are deposited on soda lime glass by a dc magnetron sputtering technique having the unbalanced-magnet structure in order to improve the electrical/material characteristics and to avoid the surface damages. The material properties are measured by the x-ray diffractometer (XRD) and atomic force microscope (AFM). The (400) peak as the preferred orientation of <100> direction for ITO thin films is stabilized with the increase of substrate temperature. The surface roughness estimated by AFM 3D image at the substrate temperature of 40$0^{\circ}C$ is extremely uniform. The best resistivity of ITO films (5500 $\AA$ thick) at 40$0^{\circ}C$ is about 1.3$\times$10$^{-4}$ $\Omega$cm on the position of 4 cm from substrate center.