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A Study on the Fabrication and Structural Properties of Al-Co/AlN-Co Thin Films

  • Han, Chang-Suk (Dept. of Defense Science & Technology, Hoseo University) ;
  • Han, Seung-Oh (Institute of Fusion Technology, Hoseo University)
  • Received : 2010.11.08
  • Published : 2011.03.25

Abstract

We have synthesized Al-Co/AlN-Co multilayer films with different layer thicknesses by using a Two-Facing Target Type dc Sputtering (TFTS) system. The deposited films were annealed isothermally at different temperatures and their microstructure, magnetic properties and resistivity were investigated. The magnetization of the as-deposited films was found to be very small, irrespective of layer thickness. It was found that the annealing conditions and layer thickness ratio of Al-Co to AlN-Co (LTR) were able to control the microstructure, as well as the physical properties of the prepared films. The resistivity and magnetization increased and the coercivity decreased with a decreasing LTR. A high resistivity of 2500 ${\mu}{\Omega}-cm$, a magnetization of 360 $emu/cm^3$, and a coercivity of 5 Oe were obtained for the films with LTR=0.175.

Keywords

Acknowledgement

Supported by : Hoseo University

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