• 한국지구물리탐사학회:학술대회논문집
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• 2006.06a
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• pp.117-122
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• 2006

In the geophysical monitoring to understand the change of subsurface material properties with time, the time-invariant static subsurface model is commonly adopted to reconstruct a time-lapse image. This assumption of static model, however, can be invalid particularly when fluid migrates very quickly in highly permeable medium in the brine injection experiment. In such case, the resultant subsurface images may be severely distorted. In order to alleviate this problem, we develop a new least-squares inversion algorithm under the assumption that the subsurface model will change continuously in time. Instead of sampling a time-space model into numerous space models with a regular time interval, a few reference models in space domain at different times pre-selected are used to describe the subsurface structure continuously changing in time; the material property at a certain space coordinate are assumed to change linearly in time. Consequently, finding a space-time model can be simplified into obtaining several reference space models. In order to stabilize iterative inversion and to calculate meaningful subsurface images varying with time, the regularization along time axis is introduced assuming that the subsurface model will not change significantly during the data acquisition. The performance of the proposed algorithm is demonstrated by the numerical experiments using the synthetic data of crosshole dc resistivity tomography.

• Geophysics and Geophysical Exploration
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• v.11 no.1
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• pp.68-77
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• 2008

We have developed an inversion algorithm for loop-loop electromagnetic (EM) data, based on the localised non-linear or extended Born approximation to the solution of the 2.5D integral equation describing an EM scattering problem. Source and receiver configuration may be horizontal co-planar (HCP) or vertical co-planar (VCP). Both multi-frequency and multi-separation data can be incorporated. Our inversion code runs on a PC platform without heavy computational load. For the sake of stable and high-resolution performance of the inversion, we implemented an algorithm determining an optimum spatially varying Lagrangian multiplier as a function of sensitivity distribution, through parameter resolution matrix and Backus-Gilbert spread function analysis. Considering that the different source-receiver orientation characteristics cause inconsistent sensitivities to the resistivity structure in simultaneous inversion of HCP and VCP data, which affects the stability and resolution of the inversion result, we adapted a weighting scheme based on the variances of misfits between the measured and calculated datasets. The accuracy of the modelling code that we have developed has been proven over the frequency, conductivity, and geometric ranges typically used in a loop-loop EM system through comparison with 2.5D finite-element modelling results. We first applied the inversion to synthetic data, from a model with resistive as well as conductive inhomogeneities embedded in a homogeneous half-space, to validate its performance. Applying the inversion to field data and comparing the result with that of dc resistivity data, we conclude that the newly developed algorithm provides a reasonable image of the subsurface.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.7
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• pp.6-13
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• 2006

Tin doped indium oxide(ITO) and Al doped zinc oxide(ZnO:Al) films, which are widely used as a transparent conductor in optoelectronic devices, were prepared by using the capacitively coupled DC magnetron sputtering method. ITO and ZnO:Al films with the optimum growth conditions showed each resistivity of $1.67{\times}10^{-3}[{\Omega}-cm],\;2.2{\times}10^{-3}[{\Omega}-cm]$ and transmittance of 89.61[%], 90.88[%] in the wavelength range of the visible spectrum. The two types of 5 inch-PDP cells with ZnO:Al and ITO transparent electrodes were made under the same manufacturing conditions. The PDP cell with ZnO:Al film was optimally operated in the mixing gas rate of Ne(base)-Xe(8[%]), and at gas pressure of 400[Torr]. It also shows the average measured brightness of $836[cd/m^2]$ at voltage range of $200{\sim}300$[V]. Luminous efficiency, one of the key parameter for high brightness and low power consumption, ranges from 1.2 to 1.6[lm/W] with increasing frequency of ac power supplier from 10 to 50[Khz]. The brightness and luminous efficiency are lower than those with ITO electrode by about 10[%]. However, these values are considered to be enough for the normal operation of PDP TV.

• Korean Journal of Optics and Photonics
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• v.13 no.5
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• pp.455-459
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• 2002

The transport and optical properties of $In_2O_3$:Zn(IZO) thin films grown by DC magnetron sputtering deposition have been studied. The deposition temperatures ($T_s$) were varied from room temperature to $400^{\circ}C$ in $50^{\circ}C$ steps. The IZO films are an amorphous phase for $T_s$<$300^{\circ}C$ and polycrystalline phase for $350^{\circ}C$＜$T_s$. In contrast to ordinary films, amorphous IZO films have lower resistivity and higher optical transmittance than polycrystalline IZO films. The resistivity of amorphous IZO was in the range of 0.29~0.4 m$\Omega$cm and that of polycrystalline IZO was in the range of 1~4 m$\Omega$cm. The carrier type for IZO film was found to be n-type, and the carrier density, was $3~5{\times}10^{20}/cm^3$. The Hall mobility, $({\mu}_H)$, was 20~$50\textrm{cm}^2$/V.sec. The predominant scattering mechanisms in both amorphous and polycrystalline IZO films were believed to be ionized impurity scattering and lattice scattering. The visible transmittance of the IZO films, which decreases with an increase of TS, was above 80%.

• Journal of the Korean Magnetics Society
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• v.12 no.6
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• pp.218-223
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• 2002

We investigated the magnetic properties of High Flux-type $Ni_{x}Fe_{100-x}$(x=40∼50, wt.％) permalloy powders and dust cores. The powder was prepared by conventional gas atomization in mass production scale. At the composition of $Ni_{x}Fe_{55}$, saturation magnetization was maximum. In case of lower Ni content than X=45, the $M_{s}$, decreased largely with the decrease in Ni content, which is due to the invar effect. The permeability of compressed powder cores increased with the decrease in Ni content, which was considered to be due to the decrease in the magnetostriction. In addition, the dust core with Ni=45％ showed the lowest core loss because of the increase in electrical resistivity leading to the low eddy current loss. From the better frequency dependence of permeability, larger Q value and superior DC bias characteristics of Ni=45％ than those of Ni=50％ core, it was confirmed that the 45％Ni-55％Fe powder alloy was better material for the dust core than commercial High Flux core materials.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.601-606
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• 2000

Nickel mono-silicide(NiSi) shows no increase of resistivity as the line width decreases below 0.15$\mu\textrm{m}$. Furthermore, thin silicide can be made easily and restrain the redistribution of dopants, because NiSi in created through the reaction of one nickel atom and one silicon atom. Therefore, we investigated the deposition condition of Ni films, heat treatment condition and basic properties of NiSi films which are expected to be employed for sub-0.15$\mu\textrm{m}$ class devices. The nickel silicide film was deposited on the Si wafer by using a dc-magnetron sputter, then annealed at the temperature range of $150~1000^{\circ}C$. Surface roughness of each specimen was measured by using a SPM (scanning probe microscope). Microstructure and qualitative composition analysis were executed by a TEM-EDS(transmission electron microscope-energy dispersive x-ray spectroscope). Electrical properties of the materials at each annealing temperature were measured by a four-point probe. As the results of our study, we may conclude that; 1. SPM can be employed as a non-destructive process to monitor NiSi/NiSi$_2$ transformation. 2. For annealing temperature over $800^{\circ}C$, oxygen pressure $Po_2$ should be kept below $1.5{\times}10^{-11}torr$ to avoid oxidation of residual Ni. 3. NiSi to $NiSi_2$ transformation temperature in our study was $700^{\circ}C$ from the four-point probe measurement.

• Journal of the Korean Magnetics Society
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• v.14 no.1
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• pp.7-12
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• 2004

The annealing-temperature dependence of magnetic properties in compressed powder cores being composed of ball-milled F $e_{73.5}$C $u_1$N $b_3$S $i_{15.5}$ $B_{7}$ alloy powders (size 250∼850${\mu}{\textrm}{m}$) and 5 wt% of ceramic insulators has been investigated. When annealed at 5$50^{\circ}C$ for 1 h and so transformed to $\alpha$-Fe phase nanocrystalline structure with the grain size of 11 nm (electrical resistivity : 110 $\mu$Ω$.$cm), the highest effective permeability of 125 and quality factor of 53 were obtained, and the permeability persisted up to about 500 KHz. Further the core loss measured at the frequency of 50 KHz and the induction amplitude of 0.1 T was very low (230 mW/㎤). However the dc bias characteristics was not satisfactory as compared to that of conventional powder core materials(MPP, Sendust etc.). The inferior dc bias property of F $e_{73.5}$C $u_1$N $b_3$S $i_{15.5}$ $B_{7}$ alloy powder cores was attributed to the fact that the size of powder was too large for obtaining the same permeability with that of conventional materials.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.353-359
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• 2000

$(Bi_{0.15}Sb_{0.85})_2Te_3$ and $(Bi_{1-x}Sb_x)_2Te_3$ thermoelectric thin films were prepared by magnetron sputtering process, and their thermoelectric characteristics were investigated with variation of the sputtering condition and the $Sb_2Te_3$ content. The $(Bi_{0.15}Sb_{0.85})_2Te_3$ film, deposited by DC sputtering at $300^{\circ}C$ with rotating the Corning glass substrate at 10 rpm, was fully crystallized to $(Bi,Sb)_2Te_3$ phase with c-axis preferred orientation. This $(Bi_{0.15}Sb_{0.85})_2Te_3$ film exhibited the Seebeck coefficient of 185 $\mu$V/K which was higher than the values of other $(Bi_{0.15}Sb_{0.85})_2Te_3$ films fabricated with different sputtering conditions. With increasing the $Sb_2Te_3$ content, the Seebeck coefficient and electrical resistivity of p-type $(Bi_{1-x}Sb_x)_2Te_3$ (0.77$\leq$x$\leq$1.0) film were lowered. Among p-type $(Bi_{1-x}Sb_x)_2Te_3$ films, a maximum power factor of $0.79{\times}10^{-3}W/K^2-m$ was obtained at (Bi_{0.05}Sb_{0.95})_2Te_3$ composition..

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.128-133
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• 2010

ZnO:Al films were deposited by DC-pulsed magnetron sputtering using a two-step process involving the control of the oxygen pressure. The seed layers were prepared with various Ar to oxygen flow ratios and the bulk layers were deposited under pure Ar. As the oxygen pressure during the deposition of the seed layer increased, the crystallinity and degree of (002) texturing increased. The resistivity gradually decreased with increasing crystallinity from $4.7\times10^4\Omega{\cdot}cm$ (no seed) to $3.7\times10^4\Omega{\cdot}cm$ (Ar/$O_2$ = 9/1). The etched surface showed a crater-like structure and an abrupt morphology change appeared as the crystallinity was increased. The sample deposited at an Ar/$O_2$ flow ratio of 9/1 showed a very high haze value of 88% at 500 nm, which was explained by the large feature size of the craters, as shown in the AFM image.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.400-406
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• 1997

The electrical and physical characteristics of aluminum oxide and Pt thin films on it, deposited by reactive sputtering and DC magnetron sputtering, respectively, were analyzed with increasing annealing temperature($400{\sim}800^{\circ}C$) by four point probe, SEM and XRD. Under $600^{\circ}C$ of annealing temperature, aluminum oxide had the properties of improving Pt adhesion to $SiO_{2}$ and insulation without chemical reaction to Pt thin films and the resistivity of Pt thin films was improved. But these properties of aluminum oxide and Pt thin films on it were degraded over $700^{\circ}C$ of annealing temperature because aluminum oxide was changed into metal aluminum and then reacted to Pt thin films deposited on it. The thermal characteristics of Pt micro heater were analyzed with Pt-RTD integrated on the same substrate. In the analysis of properties of Pt micro heater, active area was smaller size, Pt micro heater had better thermal characteristics. The temperature of Pt micro heater with active area, $200{\mu}m{\times}200{\mu}m$ was up to $400^{\circ}C$ with 1.5watts of the heating power.