Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Enhancement of Crystallinity in ZnO:Al Films Using a Two-Step Process Involving the Control of the Oxygen Pressure

산소 압력의 조절과 함께 두 번의 증착 과정을 이용한 ZnO:Al 박막에 결정성의 향상

  • Moon, Tae-Ho (Devices and Materials Laboratory, LG Electronics) ;
  • Yoon, Won-Ki (Devices and Materials Laboratory, LG Electronics) ;
  • Lee, Seung-Yoon (Devices and Materials Laboratory, LG Electronics) ;
  • Ji, Kwang-Sun (Devices and Materials Laboratory, LG Electronics) ;
  • Eo, Young-Joo (Devices and Materials Laboratory, LG Electronics) ;
  • Ahn, Seh-Won (Devices and Materials Laboratory, LG Electronics) ;
  • Lee, Heon-Min (Devices and Materials Laboratory, LG Electronics)
  • 문태호 (소자재료연구소, LG전자) ;
  • 윤원기 (소자재료연구소, LG전자) ;
  • 이승윤 (소자재료연구소, LG전자) ;
  • 지광선 (소자재료연구소, LG전자) ;
  • 어영주 (소자재료연구소, LG전자) ;
  • 안세원 (소자재료연구소, LG전자) ;
  • 이헌민 (소자재료연구소, LG전자)
  • Received : 2009.12.09
  • Accepted : 2010.02.10
  • Published : 2010.03.30
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Abstract

ZnO:Al films were deposited by DC-pulsed magnetron sputtering using a two-step process involving the control of the oxygen pressure. The seed layers were prepared with various Ar to oxygen flow ratios and the bulk layers were deposited under pure Ar. As the oxygen pressure during the deposition of the seed layer increased, the crystallinity and degree of (002) texturing increased. The resistivity gradually decreased with increasing crystallinity from $4.7\times10^4\Omega{\cdot}cm$ (no seed) to $3.7\times10^4\Omega{\cdot}cm$ (Ar/$O_2$ = 9/1). The etched surface showed a crater-like structure and an abrupt morphology change appeared as the crystallinity was increased. The sample deposited at an Ar/$O_2$ flow ratio of 9/1 showed a very high haze value of 88% at 500 nm, which was explained by the large feature size of the craters, as shown in the AFM image.

ZnO:Al 박막은 산소 압력을 조절한 두 번의 증착 과정을 이용하여, DC 펄스 마그네트론 스퍼터링 방법에 의해 증착되었다. 시드막은 다양한 Ar/$O_2$ 압력비에서 증착되었으며, 벌크막은 순수한 Ar가스를 사용하여 증착되었다. 시드막 증착시 산소 압력이 증가함에 따라, 결정성과 (002) 배향성의 정도는 증가했다. 비저항은 시드가 없는 샘플의 경우 $4.7\times10^4\Omega{\cdot}cm$ cm로부터 Ar/$O_2$ = 9/1 샘플의 경우 $3.7\times10^4\Omega{\cdot}cm$까지, 결정성의 증가와 함께 점차 감소했다. 에칭된 표면은 분화구 형상의 구조를 보여주었으며, 급격한 형상 변화가 결정성 증가와 함께 나타났다. Ar/$O_2$= 9/1 조건의 샘플은 500 nm 에서 88%의 매우 높은 haze 수치를 보여주었으며, 이는 AFM 이미지에서 보여지는 것처럼 큰 표면 구조 크기에 의해 설명된다.

Keywords

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