• 제목/요약/키워드: DC resistivity

검색결과 362건 처리시간 0.027초

증착 온도를 변화시켜 DC magnetron sputter로 증착한 Ga-doped ZnO 박막의 특성

  • 박지현;신범기;이민정;이태일;명재민
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 추계학술발표대회
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    • pp.41.2-41.2
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    • 2011
  • Display 산업의 확대로 인해 광학적 특성 및 전기적 특성이 우수한 TCO (Transparent conductive oxide) 연구가 활발히 진행되고 있다. 기존에는 ITO가 대부분의 분야에서 이용되었지만 In의 경제적인 단점으로 인해 새로운 대체물로써 ZnO가 떠오르고 있다. ZnO는 전형적인 n-type 반도체이며, wide band gap 물질로써 Al, Ga, B과 같은 3 족 원소를 doping 함으로써 광학적 및 전기적 특성을 향상시킬 수 있다. 최근에는 ZnO의 이온반경과 비슷한 Ga을 도핑한 Ga-doped ZnO 박막에 대한 연구가 활발히 진행되고 있다. 이는 ZnO에 Ga을 도핑함으로써 격자결함을 최소화 시키고 carrier concentration 및 hall mobility를 향상시켜 전기전도도의 향상을 이루기 때문이다. 본 연구에서는 $Ga_2O_3$이 3wt% doping 된 ZnO rotating cylindrical target 을 DC magnetron sputtering 을 이용하여 2 kW의 파워와 70 kHz의 주파수를 고정하고, 증착 온도를 변화시켜 유리 기판 위에 Ga-doped ZnO 박막을 증착 하였다. 증착 시 온도가 Ga-doped ZnO 박막에 미치는 영향을 관찰하기 위해 박막 표면의 조성을 분석하였고, 결정성 및 전기적 특성의 변화를 통해 박막의 특성을 비교 평가하였다. Ga-doped ZnO 박막의 표면과 두께는 SEM (Scanning electron microscope) 분석을 통해 관찰하였고, XRD (X-ray diffractometer) 를 이용하여 결정학적 특성을 확인하였다. 또한 Van der Pauw 방법을 이용한 hall 측정을 통해 resistivity, carrier concentration, hall mobility를 분석하였고, UV-Vis를 이용하여 박막의 투과율을 분석하였으며, 이를 토대로 투명 전도막으로써 Ga-doped ZnO 박막의 응용 가능성을 평가하였다.

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$Bi_2O_3$를 첨가한 Mn-Ni-Co계 써미스타의 자동차 연료 부족 감지용 센서 특성 (Characteristics of Mn-Ni-Co system for automobile fuel shortage detecting sensor with $Bi_2O_3$ addition)

  • 윤중락;이헌용;김두용;오창섭
    • E2M - 전기 전자와 첨단 소재
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    • 제9권5호
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    • pp.455-462
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    • 1996
  • Automobile Fuel Shortage Detecting Sensor, in this paper, was fabricated by using heat dissipation coefficient difference between gasoline and air condition the NTC thermistor of Mn-Ni Co system with the composition ratio of Mn$_{3}$O$_{4}$ : 9wt%, NiO : 28wt%, and CO$_{3}$O$_{4}$ : 61wt%. The condition of sensor operation is that, for turn-on characteristics, the time of arriving at 135mA must be less than 180 second when the DC voltage of 11V is applied in the air condition of -10.deg. C and that, for turn-off characteristics, the saturation current must be less than 60mA when the DC voltage of 15V is applied in the gasoline condition of 60.deg. C. It is known, from the experimental results, that the resistance range and B-constant for the Automobile Fuel Shortage Detecting Sensor with dimension of 5*3*0.9mm were 850-1150.ohm. and 1150-1250.deg. C, respectively and the resistance range and B-constant were agree with that of sensor operation condition. When Bi$_{2}$O$_{3}$ of 0-0.5wt% was added to Mn$_{3}$O$_{4}$ : 9wt%, NiO : 28wt%, and CO$_{3}$O$_{4}$ : 61wt% composition, the resistivity and B-value were 380-430(.ohm.-cm) and 1930 - 2030, respectively. Particularly, for Bi$_{3}$O$_{3}$ of 0.25-0.5wt%, the sintering density of over 90% and the operation characteristics necessary to Automobile Fuel Shortage Detecting Sensor were obtained. The difference of heat dissipation coefficient gasoline and air condition was 15 times.

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Hydrogenated In-doped ZnO Thin Films for the New Anode Material of Organic Light Emitting Devices: Synthesis and Application Test

  • Park, Young-Ran;Nam, Eun-Kyoung;Boo, Jin-Hyo;Jung, Dong-Geun;Suh, Su-Jeong;Kim, Young-Sung
    • Bulletin of the Korean Chemical Society
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    • 제28권12호
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    • pp.2396-2400
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    • 2007
  • Transparent In-doped (1 at.%) zinc oxide (IZO) thin films are deposited by pulsed DC magnetron sputtering with H2 mixed Ar atmosphere on glass substrate without any heating process. Even at room temperature, highly c-axis oriented IZO thin films were grown in perpendicular to the substrate. The hydrogenated IZO (IZO:H) film isolated in H2 atmosphere for 30 min exhibited an average optical transmittance higher than 85% and low electrical resistivity of less than 2.7 × 10?3 Ω·cm. These values are comparable with those of commercially available ITO. Each of the IZO films was used as an anode contact to fabricate organic light-emitting diodes (OLEDs) and the device performances studied. At the current density of 1 × 103 A/m2, the OLEDs with IZO:H (H2) anode show excellent efficiency (11 V drive voltage) and a good brightness (8000 cd/m2) of the light emitted from the devices, which are as good as the control device built on a commercial ITO anode.

Effect of the oxygen flow ratio on the structural and electrical properties of indium zinc tin oxide (IZTO) films prepared by pulsed DC magnetron sputtering

  • Son, Dong-Jin;Nam, Eun-Kyoung;Jung, Dong-Geun;Ko, Yoon-Duk;Choi, Byung-Hyun;Kim, Young-Sung
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.168-168
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    • 2010
  • Transparent conduction oxides (TCOs) films is extensively reported for optoelectronic devices application such as touch panels, solar cells, liquid crystal displays (LCDs), and organic light emitting diodes(OLEDs). Among the many TCO film, indium tin oxide(ITO) is in great demand due to the growth of flat panel display industry. However, indium is not only high cost but also its deposits dwindling. Therefore, many studies are being done on the transparent conductive oxides(TCOs). We fabricated a target of IZTO(In2O3:ZnO:SnO2=70:15:15 wt.%) reduced indium. Then, IZTO thin films were deposited on glass substrates by pulsed DC magnetron sputtering with various oxygen flow ratio. The substrate temperature was fixed at the room temperature. We investigated the electrical, optical, structural properties of IZTO thin films. The electrical properties of IZTO thin films were dependent on the oxygen partial pressure. As a result, the most excellent properties of IZTO thin films were obtained at the 3% of oxygen flow rate with the low resistivity of $7.236{\times}10^{-4}{\Omega}cm$. And also the optical properties of IZTO thin films were shown the good transmittance over 80%. These IZTO thin films were used to fabricated organic light emitting diodes(OLEDs) as anode and the device performances studied. The OLED with an IZTO anode deposited at optimized deposition condition showed good brightness properties. Therefore, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

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산소 유량별 플라즈마 방출광원 세기에 따른 전자온도 진단과 산화주석박막 특성연구 (Study on Electron Temperature Diagnostic and the ITO Thin Film Characteristics of the Plasma Emission Intensity by the Oxygen Gas Flow)

  • 박혜진;최진우;조태훈;윤명수;권기청
    • 한국표면공학회지
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    • 제49권1호
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    • pp.92-97
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    • 2016
  • The plasma has been used in various industrial fields of semiconductors, displays, transparent electrode and so on. Plasma diagnostics is critical to the uniform process and the product. We use the electron temperature of the various plasma parameters for the diagnosis of plasma. Generally, the range of the electron temperature which is used in a semiconductor process used the range of 1 eV to 10 eV. The difference of electron temperature of 0.5 eV has a influence in plasma process. The electron temperature can be measured by the electrical method and the optical method. Measurement of electron temperature for various gas flow rates was performed in DC-magnetron sputter and Inductively Coupled Plasma. The physical properties of the thin film were also determined by changing electron temperatures. The transmittance was measured using the integrating sphere, and wavelength range was measured at 300 ~ 1100 nm. We obtain the thin film of the mobility, resistivity and carrier concentration using the hall measurement system. As to the electron temperature increase, optical and electrical properties decrease. We determine it was influenced by the oxygen flow ratio and plasma.

롤투롤 스퍼터 시스템을 이용하여 PET 기판위에 성막 시킨 ITO 박막의 특성 연구 (Characteristics of Indium Tin Oxide Films Grown on PET Substrate Grown by Using Roll-to-Roll (R2R) Sputtering System)

  • 조성우;최광혁;배정혁;문종민;정진아;정순욱;박노진;김한기
    • 한국재료학회지
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    • 제18권1호
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    • pp.32-37
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    • 2008
  • The electrical, optical, structural and surface properties of an indium tin oxide (ITO) film grown on a flexible PET substrate using a specially designed roll-to-roll (R2R) sputtering system as a function of the DC power, $Ar/O_2$ flow ratio, and rolling speed is reported. It was observed that both the electrical and optical properties of the ITO film on the PET substrate were critically dependent on the $Ar/O_2$ flow ratio. In addition, x-ray diffraction examination results showed that the structure of the ITO film on the PET substrate was an amorphous structure regardless of the DC power and the $Ar/O_2$ flow ratio due to a low substrate temperature, which was maintained constant by a main cooling drum. Under optimized conditions, ITO film with resistivity of $6.44{\times}10^{-4}{\Omega}-cm$ and transparency of 86% were obtained, even when prepared at room temperature. Furthermore, bending test results exhibited that R2R-grown ITO film had good flexibility which would be applicable to flexible displays and solar cells.

NDLC 박막 위에 Ion Beam 배향한 TN-LCD의 전기광학특성 (EO Characteristics of the ion Beam Aligned TN-LCD on the NDLC Thin Film Surface)

  • 박창준;황정연;강형구;안한진;김경찬;김종복;백홍구;서대식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.1054-1057
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    • 2004
  • The nitrogenated diamond-like carbon (NDLC) exhibits high electrical resistivity and thermal conductivity that are similar to the properties shown by diamond-like carbon (DLC) films. These diamond-like transparent properties in NDLC come in a material consisting of $sp^2$-bonded carbon versus the $sp^3$-carbon of DLC. The diamond-like properties and nondiamond-like bonding make NDLC an attractive candidate for applications. Liquid crystal (LC) alignment capabilities with ion beam exposure on NDLC thin films and electro-optical (EO) performances of the ion-beam-aligned twisted nematic liquid crystal display (TN-LCD) with oblique ion beam exposure on the NDLC thin film surface were studied. An excellent uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the NDLC thin films was observed. In addition, it can be achieved that the good EO properties of the ion-beam-aligned TN-LCD. Finally, we will present the residual DC property of the ion-beam-aligned TN-LCD on the NDLC thin film surface.

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크롬질화박막형 스트레인 게이지의 특성 (The Characteristics of Chromiun Nitride Thin-Film Strain Gauges)

  • 서정환;김일명;이채봉;김순철;정귀상
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 D
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    • pp.1989-1991
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    • 1999
  • This paper presents characteristics of CrN thin-film strain gauges, which were deposited on glass by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-$(5{\sim}25%)N_2$). The physical and electrical characteristics of these films investigated with the thickness range $3500{\AA}$ of CrN thin films, annealing temperature $(100{\sim}300^{\circ}C)$ and annealing $(24{\sim}72hr)$. The optimized condition of CrN thin-film strain gauges were thickness range of $3500{\AA}$ and annealing condition($300^{\circ}C$, 48 hr) in Ar-10 %$N_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauge is obtained a high resistivity, ${\rho}=1147.65{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=$-186ppm/^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. And change in resistance after annealing for the CrN thin-films were quitely linear and stable.

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Comparison study of heatable window film using ITO and ATO

  • Park, Eun Mi;Lee, Dong Hoon;Suh, Moon Suhk
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.300.2-300.2
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    • 2016
  • Increasing of the demand for energy savings for buildings, thermal barrier films have more attracted. In particular, as heat loss through the windows have been pointed out to major problems in the construction and automobile industries, the research is consistently conducted for improving the thermal blocking performance for windows. The main theory of the technology is reflect the infrared rays to help the cut off the inflow of the solar energy in summer and outflow of the heat from indoors in winter to save the energy on cooling and heating. Furthermore, this is well known for prevent glare, reduces fading caused by harmful ultraviolet radiation and easy to apply on constructed buildings if it made as a film. In addition to these advantages, apply the transparent electrode to eliminate condensation by heating. Generally ITO is used as a transparent electrode, but is has a low stability in environmental factors. In this study, ITO and its alternative, ATO, is deposited by sputtering system and then the characteristic is evaluated each material based thermal barrier thin film. The optical property was measured on wide range of wavelength (200 nm 2500 nm) to know the transparency in visible wavelength and reflectivity in IR wavelength range. The electrical property was judged by sheet resistivity. Finally the changes of the temperature and current of the deposited film was observed while applying a DC power.

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고온용 압저항센서용 크롬산화박막의 특성 (Characteristics of chromium oxide thin-films for high temperature piezoresistive sensors)

  • 서정환;노상수;이응안;정귀상;김광호
    • 센서학회지
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    • 제14권1호
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    • pp.56-61
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    • 2005
  • This paper present characteristics of chromium oxide thin-film as piezoresistive sensors, which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-Oxide atmosphere for high temperature applications. The chemical composition, physical and electrical properties and thermal stability ranges of the $CrO_{x}$ sensing elements have studied. $CrO_{x}$ thin films with a linear gauge factor(GF${\fallingdotseq}$15), high electrical resistivity (${\rho}$ = $340{\mu}{\Omega}cm$) and TCR<-55 ppm/$^{\circ}C$ have been obtained. These $CrO_{x}$ thin films may allow high temperature pressure sensor miniaturization to be achieved.