• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.276-283
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• 2003

In this paper, a 2-stage power amplifier(PA) for IMT-2000 handset has been designed and fabricated using SiGe HBT, which has excellent frequency characteristics and linearity, to reduce size and weight instead of existing linearization techniques. DC I-V characteristics and S-parameter of SiGe HBT were simulated by Agilent circuit simulator(ADS), with large signal Gummel-Poon nonlinear circuit model. Then the output and interstage matching circuits were designed to satisfy the high power condition and the high gain condition, respectively. The experimental results showed output power of 27.1dBm and ACLR of 20dB, PAE of 34%, and linear power gain of 18.9dB over frequency ranges from 1920MHz to 1980MHz.

• Proceedings of the KIPE Conference
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• 2006.06a
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• pp.46-49
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• 2006

The LLC series resonant converter with a LLT(Inductor-Inductor-Transformer) transformer for PDP V sustaining power supply is presented. LLT transformer used to combine the inductor and transformer into one unit has the increased leakage inductance in the primary and secondary due to the winding method and the use of the gaped core. The increased leakage inductance in the primary and secondary of LLT transformer can be impacted on the DC voltage gain characteristics of LLC series resonant converter. In this paper, DC gain characteristics and the experimental results of the LLC series resonant converter with a LLT transformer are verified on the simulation based on the theoretical analysis and the 400W experimental prototype.

• ETRI Journal
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• v.27 no.6
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• pp.685-690
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• 2005

DC and RF characteristics of $0.15{\mu}m$ GaAs power metamorphic high electron mobility transistors (MHEMT) have been investigated. The $0.15{\mu}m{\times}100{\mu}m$ MHEMT device shows a drain saturation current of 480 mA/mm, an extrinsic transconductance of 830 mS/mm, and a threshold voltage of -0.65 V. Uniformities of the threshold voltage and the maximum extrinsic transconductance across a 4-inch wafer were 8.3% and 5.1%, respectively. The obtained cut-off frequency and maximum frequency of oscillation are 141 GHz and 243 GHz, respectively. The $8{\times}50{\mu}m$ MHEMT device shows 33.2% power-added efficiency, an 18.1 dB power gain, and a 28.2 mW output power. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56 dB at 26 GHz are obtained for the power MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the drastic reduction of gate resistance by the T-shaped gate with a wide head and improved device performance. This power MHEMT technology can be used toward 77 GHz band applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.3
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• pp.432-438
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• 2001

In this paper, after applying Defected Ground Structure(DGS) to DC block, changes of gap and length of λ/4 coupled line are investigated by EM simulation and fabrication. As a result, on condition of the same output with the case using typical DC block, the gap between λ/4 coupled line is widen from 0.1 mm to 0.46 mm by 0.36 mm and the length of λ/4 coupled line gets shorter from 17.7 mm to 13.2 mm by 4.5 mm. Also three type power amplifiers using blocking capacitor, typical DC block and DGS DC block are fabricated and investigated. At first, when S parameter characteristics of each amplifier are considered at frequency band of 3.2 +-0.O5 GHz, every amplifier has similar characteristics of gain and S parameter. Second when the output power of amplifiers is 25 dBm after putting CW signal of 3.2 GHz into three type amplifiers, the difference of dominant signal and 2nd harmonic signal using blocking capacitor, typical DC block and DGS DC block is each -44.83 dBc, -66.84 dBc and -64.33 dBc. Therefore harmonic characteristics of amplifiers using typical DC block and DGS DC block is almost same.

• International Journal of Fuzzy Logic and Intelligent Systems
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• v.14 no.3
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• pp.188-199
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• 2014

Although the fuzzy logic controller is superior to the proportional integral derivative (PID) controller in motor control, the gain tuning of the fuzzy logic controller is more complicated than that of the PID controller. Using mathematical analysis of the proportional derivative (PD) and fuzzy logic controller, this study proposed a design method of a fuzzy logic controller that has the same characteristics as the PD controller in the beginning. Then a design method of a fuzzy logic controller was proposed that has superior performance to the PD controller. This fuzzy logic controller was designed by changing the envelope of the input of the of the fuzzy logic controller to nonlinear, because the fuzzy logic controller has more degree of freedom to select the control gain than the PD controller. By designing the fuzzy logic controller using the proposed method, it simplified the design of fuzzy logic controller, and it simplified the comparison of these two controllers.

• Journal of the Semiconductor & Display Technology
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• v.16 no.3
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• pp.25-30
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• 2017

Arago's disk system consists of a speed controller of the DC motor (inner loop controller) and a position controller of the magnetic bar angle (main controller), which are implemented by the design of the PI and PID controller, respectively. First, we analyzed the nonlinear characteristics of the Arago disk system and found the operating point range of three locations as a result. In this paper, a gain scheduler method was applied to guarantee a constant control performance in the range of $0{\sim}130^{\circ}C$, and a structure to change the controller according to the control reference value based on the previously obtained operating points was experimentally implemented. The Distributed Control Systems (DCS) configuration using the Controller Area Network (CAN) was used to verify the proposed method by improving the operational efficiency of the entire experimental system. So, simplicity of the circuit and easy diagnosis were achieved through a single CAN bus communication.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.4B
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• pp.365-371
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• 2002

In this paper, the fabricated power PHEMT devices for millimeter-wave that is below a gate-length of 0.2 $\mu\textrm{m}$ using electronic beam lithography technologies, and the DC and frequency characteristics and an output power characteristics were Measured at the various bias conditions. The unit process that is used in PHEMT's manufacture used that low-resistance ohmic contact, air-bridge and back-side lapping process technologies, and so on. The fabricated power PHEMT have an S521 gain of 4 dB and a maximum transconductance(gm) of 317 mS/mm, an unilateral current gain(fT) of 62 GHz, a maximum oscillation frequency(fmax) of 120 GHz at 35 GHz, and a maximum power output(Pmax) of 16 dBm, a power gain(GP) of 4 dB and a drain efficiency(DE) of 35.5 %.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.136-141
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• 1995

GaAs power MESFETs with 1 .mu.m gate length and an undoped GaAs surface layer on the doped GaAs channel are fabricated using IR(image reversal) and air-birdge processes. And then We have measured and calculated DC and RF characteristics. We have obtained saturation current 107-500 mA (197-255 mA/mm), maximum linear RF output power 111-518.8 mW (204-270 mW/mm), current gain cut-off frequency 7-10 GHz, maximum unilateral transducer power gain 5.7-12.7, and power added efficiencies 37.9-41.2 % from the devices with gate width 0.45-2.2 mm, at 6 GHz.

• The Transactions of the Korean Institute of Power Electronics
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• v.11 no.1
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• pp.46-55
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• 2006

This paper presents the control method for the hybrid actuator comprising a DC motor and an MR brake. Generally, a DC motor as an active actuator has a small power to weight ratio and goes unstable with higher force control gain due to its saturation limit. In order to cope with this instability and make the transparency higher, this paper proposes a hybrid actuator which consists of a DC motor and an MR brake as a passive actuator and its force control method based on network theory. A DC motor actively produces the output corresponding to the signs of the input currents. On the other hand, an MR brake passively resists against the external load independent of the sign changes of the input currents. This characteristics is widely known as 'passive' This paper suggests a force control method based on passivity concept in network theory for the hybrid actuator and verified its performance and stability through the experiments.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.12
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• pp.39-46
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• 1996

In AlGaAs/GaAs HBT the temperature dependence of DC parameters was investigated over the temperature range between 95K and 580K. The temperature dependence of DC parameters depends on the relative contribution of each of the current components suc as emitter-injection-current, base-injection-current, bulk recombination current, interface recombination curretn, thermal generation ecurrent and avalanche current due to impact ionization within the collector space charge layer in a specific temperature. In this paper we investigated the temperature effects on DC parameters such as V$_{BE,ON}$ current gain, input and output characteristics, V$_{CE, OFF}$, R$_{E}$, R$_{C}$ and analyzed the origins, and extracted the qualitativ econditions for a stable HBTs against the temperature variation. Finally, in order to keep HBTs stable with respect to the variation of temperature, the valance-band-energy-discontinuity at emitter-base heterojunction should be large enough to enhance the effect of carrier suppression at a relatively high temperature. In addition the recombination centers, especially around collector junction, should be removed and the area of emitter and collector junction should be identical as well.