• Journal of Chest Surgery
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• 제22권4호
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• pp.609-619
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• 1989

During aortic valve surgery, cardioplegic solution is delivered through direct cannulation of both coronary ostia. Since this approach may cause an intimal injury leading to acute dissection or late ostial stenosis, this study was undertaken to evaluate myocardial protective effect of retrograde perfusion of cardioplegia [RCSP <% RRAP] in 18 clinical cases, which were compared with antegrade perfusion of cardioplegia in 27 clinical cases. This study were investigated 1] cease and return of electromechanical activity after cardioplegia infusion 2] the myocardial temperature during operation 3] the aortic cross clamping time and total bypass time 4] frequency of DC shock for defibrillation 5] need for inotropic drugs after operation 6] electrocardiographic evidence of myocardial infarction or ventricular arrhythmia after operation 7] the enzymes activity during preoperative and postoperative period as an evaluation of myocardial ischemic injury and 8] operative mortality rate The combination of retrograde cardioplegia and topical cooling with ice slush yielded promptly hypothermia of myocardium and shorter aortic cross-clamping time compared with antegrade cardioplegia [P < 0.05]. The temperature of the interventricular septum was maintained below 20oC by continuous perfusion or intermittent perfusion of cold blood cardioplegia and other results were no statistically significant difference between the two methods [P >0.05]. This technique provides clear operative field and avoids some serious complications which are caused by coronary ostial cannulation. These results suggested that the retrograde perfusion of cardioplegia is a simple, safe, and effective means of myocardial protection during open heart surgery.

• 한국재료학회지
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• 제28권3호
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• pp.159-165
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• 2018

In order to increase the efficiency of the sputtering method widely used in thin film fabrication, a dc sputtering apparatus which supplies both high frequency and magnetic field from the outside was fabricated, and cobalt thin film was fabricated using this apparatus. The apparatus can independently control the applied voltage, the target-substrate distance, and the target current, which are important parameters in the sputtering method, so that a stable glow discharge is obtained even at a low gas pressure of $10^{-3}$ Torr. The fabrication conditions using the sputtering method were mainly performed in $Ar+O_2$ mixed gas containing about 0.6 % oxygen gas under various Ar gas pressures of 1 to 30 mTorr. The microstructure of Co thin films deposited using this apparatus was examined by electron diffraction pattern and X-ray techniques. The magnetic properties were investigated by measuring the magnetization curves. The microstructure and magnetic properties of Co thin films depend on the discharge gas pressure. The thin film fabricated at high gas pressure showed a columnar structure containing a large amount of the third phase in the boundary region and the thin film formed at low gas pressure showed little or no columnar structure. The coercivity in the plane was slightly larger than that in the latter case.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.176-176
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• 2003

The effects of oxide thickness and gate length of MgO/GaN metal oxide semiconductor field effect transistors (MOSFETs) on I-V, threshold voltage and breakdown voltage characteristics were examined using a drift-diffusion model. The saturation drain current scales in an inverse logarithmic fashion with MgO thickness and is < 10$^{-3}$ A.${\mu}{\textrm}{m}$$^{-1}$ for 0.5 ${\mu}{\textrm}{m}$ gate length devices with oxide thickness > 600 $\AA$ or for all 1 ${\mu}{\textrm}{m}$ gate length MOSFETs with oxide thickness in the range of >200 $\AA$. Gate breakdown voltage is > 100 V for gate length >0.5 ${\mu}{\textrm}{m}$ and MgO thickness > 600 $\AA$. The threshold voltage scales linearly with oxide thickness and is < 2 V for oxide thickness < 800 $\AA$ and gate lengths < 0.6 ${\mu}{\textrm}{m}$. The GaN MOSFET shows excellent potential for elevated temperature, high speed applications.

• Journal of electromagnetic engineering and science
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• 제16권4호
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• pp.199-205
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• 2016

We present a novel schematic using a 3-dB coupler to transmit radiofrequency (RF) power to two receivers selectively. Whereas previous multiple receiver supporting schemes used hardware-switched methods, our scheme uses a soft power-allocating method, which has the advantage of variable power allocation in real time to each receiver. Using our scheme, we can split the charging area and focus the RF power on the targeted areas. We present our soft power-allocating method in three main points. First, we propose a new power distribution hardware structure using a FPGA (field-programmable gate array) and a 3-dB coupler. It can reconfigure the transmitting power to two receivers selectively using accurate FPGA-controlled signals with the aid of software. Second, we propose a power control method in our platform. We can variably control the total power of transmitter using the DC bias of the drain input of the amplifier. Third, we provide the possibility of expansion in multiple systems by extending these two wireless power transfer systems. We believe that this method is a new approach to controlling power amplifier output softly to support multiple receivers.

• 전력전자학회논문지
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• 제7권3호
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• pp.303-312
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• 2002

본 논문에서는 병렬 운전 PWM 컨버터의 고성능 제어를 위하여 우수한 성능을 나타내는 퍼지 제어기를 제안하고 구현하였으며, 제안된 고성능 퍼지 제어기와 Pl 제어기와의 특성 비교를 위하여 PI 제어기도 구현하였다. 시뮬레이션과 실험 결과를 통하여, 특히 부하 급변시 병렬 PWM 컨버터의 U전압 과도응답 특성과 전류제어 과도응답 특성이 기존의 PI 제어기에 비해 제안된 퍼지 제어기가 우수한 특성을 나타내고 있음을 확인하였다. 제안된 퍼지 제어기의 우수한 특성을 입증하고 실제 제품에 적용하기 위하여 7.5kW PWM 컨버터 2대를 병렬 연결한 15kW PWM 컨버터를 구현하고 실험하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.897-899
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• 1992

This paper deals with the characteristics of Indium Tin Oxide(ITO) sputtered by the reactive magnetron sputtering process. ITO films have been grown at various substrate temperatures(R.T, 100$^{\circ}C$, 200$^{\circ}C$, 240$^{\circ}C$) and we used the target material of alloy of Indium and Tin. The electrical and optical properties of the ITO film have been investigated and the effect of magnetic field to the properties of ITO was studied. We have studied how much the improvement of transmission rate and sheet resistivity by heat treatment was. The sample with good electrical and optical properties can be obtained for the low substrate temperature of 200$^{\circ}C$-250$^{\circ}C$.

• 전기학회논문지P
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• 제60권3호
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• pp.110-113
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• 2011

Platform Screen Door, PSD, is a device that seeks to prevent accidents with regards to falling off the platform and getting trapped between the trains, achieve improvements on the cleanliness of the air, address the accessibility issue of the disabled and the elderly and provide fresher environment on the platform in general. This is achieved by preventing health hazards and accidents from occurring through installation of fixed and moving doors between rail, tram and subway platforms and the railway. Domestic firms have achieved domestic production to a large degree in various Control Units including the Overall Control Unit and RF devices through investments in technology. Despite this, full domestic production of the core of the PSD system, Door Control Unit, DCU, is not yet achieved, having to install PSDs in a relatively short period of time. Currently, controllers with DC motors are developed for installation or one is faced with having to import foreign produced controllers. In this research, the control unit prototype using the BLDC motor was domestically produced. The performance of the control unit was rigorously tested through installation on Eun-Ha Rail on Wol-Mi Island.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.867-872
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• 2007

A tracked robot has an excellent mobility on the rough terrain. Especially, a tracked robot for driving has to get structural function in the every field. In this paper, we propose a tracked robot of a small rear wheel typed. Also compared and estimated a driving analysis about the tracked robot in considered the general environment. Compared 2 models are different in size of rear wheels but front wheels are same size each other. From comparing model, the radius of front wheels is 100mm and the radius of rear wheels is 100mm. The radius of front wheels is 100mm and the radius of rear wheels is 70mm from proposed tracked robot. Depend on these radiuses of values we are known driving torque values of an actuating wheel using Recurdyn. And estimated stress of rotated track by an actuating wheel using Ansys. finally, the designed robot has size of $600mm\;{\times}\;330mm\;{\times}\;150mm$, weight is 27kg and the tracked robot is actuated by 2 geared DC motors.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.535-536
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• 2013

본 연구에서는 DC/RF co-sputtering공법을 통해 제작한 In-Mo-O 투명 Mo doping 농도 및 열처리 온도에 따른 전기적, 광학적, 구조적 특성을 분석하고, 최적화된 In-Mo-O 투명전극을 유기태양전지(OPVs)와 유기발광다이오드(OLED)에 적용하여 그 가능성을 평가하였다. Mo doping 농도는 co-sputtering 공정 중 MoO3에 인가되는 radio-frequency (RF) power를 변화시켜 조절되었으며, 투명전극의 광학적 특성 및 전기적 특성 향상을 위해 성막 공정 후 급속 열처리 공정을 온도 별로 진행하였다. In-Mo-O 투명 전극은 Mo 도핑 농도에 영향을 받음을 확인할 수 있었고, 최적화된 Mo doping 파워에서 성막한 In-Mo-O 박막은 급속 열처리 공정 후 면저항 24.57 Ohm/square, 투과도 81.57% (400~1,200 nm wavelength)를 나타내었다. Bulk hetero-junction 기반의 고효율 유기태양전지와 유기발광다이오드 적용하기 위해 본 연구에서 제작된 IMO 투명전극의 구조적 특성, 결정성 및 표면특성은 x-ray diffraction (XRD), atomic force microscopy(AFM), field effect scanning electron microscopy (FE-SEM), High-resolution transmission electron microscopy (HRTEM) 분석을 통해 진행하였다. In-Mo-O 투명 전극상에 제작된 OLEDs와 OPV는 reference ITO 전극에 제작된 OLEDs/OPV와 비교할 때 유사하거나 향상된 특성을 나타내었으며 이는 In-Mo-O 박막이 OLED/OPV용 투명 전극으로 적용이 가능함을 말해준다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.466-466
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• 2013

Quantum-dot materials have introduced novel applications in organic light-emitting diodes and solar cells. The size controllability and structure modifications have continuously been upgrading the applicability to optoelectronic and flat-panel displays. In particular, quantum-dot organic light-emitting diodes (QLEDs) are a device driven through the electrical field applied to the electrical diodes. The QLEDs are affected by the constituent materials and the corresponding device structures. Conventionally, the electrical properties are characterized only in terms of dc-based current-voltage characteristics. The dynamic change in light-emitting diodes should be characterized in emitted and non-emitted states. Therefore, the frequency-dependent impedance can offer different information on the electrical performance in QLED. The current work reports an auxiliary information on the electrical and optical features originating from quantum-dot organic light-emitting diodes. The empirical characterizations are discussed towards an experimental tool in optimizing the light-emitting diodes.