Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A study on the formation of ITO thin film by DC reactive magnetron sputtering

반응성 마그네트론 프로세스에 의한 ITO박막 형성에 관한 연구

  • Kwak, Y.S. (Dept. of Electrical Engineering, Pusan National University) ;
  • Cho, J.S. (Dept. of Electrical Engineering, Pusan National University) ;
  • Park, C.H. (Dept. of Electrical Engineering, Pusan National University) ;
  • Ha, H.J. (Dept. of Electrical Engineering, Pusan National University) ;
  • Sung, Y.M. (Dept. of Electrical Engineering, Pusan National University)
  • Published : 1992.07.23
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Abstract

This paper deals with the characteristics of Indium Tin Oxide(ITO) sputtered by the reactive magnetron sputtering process. ITO films have been grown at various substrate temperatures(R.T, 100$^{\circ}C$, 200$^{\circ}C$, 240$^{\circ}C$) and we used the target material of alloy of Indium and Tin. The electrical and optical properties of the ITO film have been investigated and the effect of magnetic field to the properties of ITO was studied. We have studied how much the improvement of transmission rate and sheet resistivity by heat treatment was. The sample with good electrical and optical properties can be obtained for the low substrate temperature of 200$^{\circ}C$-250$^{\circ}C$.

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