• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.11
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• pp.68-76
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• 2014

This paper presents an offset error compensation algorithm for the accurate phase angle of the grid voltage in single-phase grid-connected inverters. The offset error generated from the grid voltage measurement process cause the fundamental harmonic component with grid frequency in the synchronous reference frame phase lock loop (PLL). As a result, the grid angle is distorted and the power quality in power systems is degraded. In addition, the dq-axis currents in the synchronous reference frame and phase current have the dc component, first and second order ripples compared with the grid frequency under the distorted grid angle. In this paper, the effects of the offset and scaling errors are analyzed based on the synchronous reference frame PLL. Particularly, the offset error can be estimated from the integrator output of the synchronous reference frame PLL and compensated by using proportional-integral controller. Moreover, the RMS (Root Mean Square) function is proposed to detect the offset error component. The effectiveness of the proposed algorithm is verified through simulation and experiment results.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.51-59
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• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

• The Journal of the Korea Contents Association
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• v.17 no.11
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• pp.9-17
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• 2017

In this paper, we propose a method to develop a multimeter which is used for measuring electric signals in industrial field by using battery and display of smart phone. Most of the multimeters that are linked to existing smartphones are connected to Bluetooth, which is inconvenient for battery use and low in measurement accuracy. To improve this, we developed smart multimeter that can supply power and data at the same time by USB OTG method which can be used by sharing the power of smartphone. We also developed a smart multimeter that can measure resistance, DC voltage, current, AC voltage and current. Developed an Android app with a button that displays measurement data and can select the type of electric signal to be measured, and tests whether the manufactured system is operating normally or not. Respectively.The results of this study confirm that it is possible to fabricate a smart meter that has equal or better performance compared to existing instruments and does not require a separate power source or display, and it is expected to be a reference for the development of various smart instruments in the future.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.490-496
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• 2015

We have grown AlN/GaN heterostructure which is a promising candidate for mm-wave applications. For the growth of the high quality very thin AlN barrier, indium was introduced as a surfactant at the growth temperature varied from 750 to $1070^{\circ}C$, which results in improving electrical properties of two-dimensional electron gas (2DEG). The heterostructure with barrier thickness of 7 nm grown at of $800^{\circ}C$ exhibited best Hall measurement results; such as sheet resistance of $215{\Omega}/{\Box}$electron mobility of $1430cm^2/V{\cdot}s$, and two-dimensional electron gas (2DEG) density of $2.04{\times}10^{13}/cm^2$. The high electron mobility transistor (HEMT) was fabricated on the grown heterostructure. The device with gate length of $0.2{\mu}m$ exhibited excellent DC and RF performances; such as maximum drain current of 937 mA/mm, maximum transconductance of 269 mS/mm, current gain cut-off frequency of 40 GHz, and maximum oscillation frequency of 80 GHz.

• Journal of Biomedical Engineering Research
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• v.22 no.6
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• pp.487-496
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• 2001

In this study, a galvanic stimulator providing bipolar mode controlled by a PIC(peripheral interface controller) was constructed to evaluate vestibular function The maximum load and maximum current intensity of the constant current source were 3$k\Omega$ and 5mA. respectively. and it could Produce DC, sine wavers. or Pulse waves. Eve movements of 20 normal subjects by galvanic stimulation were analyzed using a commercial videooculogragh. During stimulating with DC for 30 sec. we recorded the response of eye movement with current intensity of 0.75. 1 2, and 3 mA. Nystagmus occurred to all the subjects when the galvanic stimulus intensity was larger than 2 mA. Average SPV(slow Phase eye movement velocity) and the number of nystagmus increased from 7.1 to 4.8 deg/sec and from 17 to 48, respectively, when the stimulus current increased from 0.75 to 3 mA. All the fast eye movement of the nystagmus were the direction of the negative electrode. The asymmetry which means the difference between right- and left-eye movements decreased when the stimulus intensity increased. It is expected that this study would be useful in evaluating vestibular function and in studying basic Physiology mechanism of vestibular ocular reflex by galvanic stimulus .

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.1A
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• pp.80-86
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• 2010

This work has been measured and analyzed the device degradation of NBTI (Negative Bias Temperature Instability) stress induced the increase of gate-induced-drain-leakage(GIDL) current for p-MOS transistors of gate channel length 0.13 [${\mu}m$]. From the relation between the variation of threshold voltage and subthreshold slop by NBTI stress, it has been found that the dominant mechanism for device degradation is the interface state generation. From the GIDL measurement results, we confined that the EHP generation in interface state due to NBTI stress led to the increase of GIDL current. As a results, one should take care of the increased GIDL current after NBTI stress in the ultra-thin gate oxide device. Also, the simultaneous consideration of reliability characteristics and dc device performance is highly necessary in the stress parameters of nanoscale CMOS communication circuit design.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.5
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• pp.223-228
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• 2018

In this paper the water sensor using a coaxial cavity resonator is designed and manufactured. The water sensor which can sense water drop linearly has been constructed with voltage controlled oscillator(VCO), coaxial cavity resonator, RF switch, RF detector, A/D converter, DAC and micro controller. The operating frequency range of the designed water sensor is from 2.5GHz to 3.2GHz and the input voltage and current source are 24[V/DC] and 1[A]. The designed sensor circuit includes VCO, RF switch, RF detector which varies the frequency characteristics of the devices in the high frequency of 3GHz. And so we should correct the error of the frequency characteristics of those devices in the sensor circuit. To do this, we make the reference path which switches the signals to the RF detector directly without sending it to the resonator. According to the result of simulation and measurement, we can see that there is 0-50MHz difference between simulated resonator frequency and manufactured resonator frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.189-193
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• 2005

In this paper, we propose a direct conversion double-balanced down-converter fer MB-OFDM W system, which is implemented using $0.18\;{\mu}m$ CMOS technology and its measurement results are shown. The proposed down-converter adopts a resistive current-source instead of general transconductance stage using MOS transistor to achieve wideband characteristics over RF input frequency band $3\~5\;GHz$ with good gain flatness. The measured conversion gain is more than +3 dB, and gain flatness is less than 3 dB for three UWB channels. The dc consumption of this work is only 0.89 mA from 1.8 V power supply, leading to the low-power W application.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.4
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• pp.108-116
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• 2002

This paper presents the measurements and evaluation of voltage waveforms due to human electrostatic discharge(ESD). The principle of operation and design rule of a new device for measuring the ESD fast transient voltages with very fast rise time were described. Peak values and rise time of ESD voltages derived from a charged human body under a variety of experimental conditions were examined. The frequency bandwidth of the proposed voltage measuring system ranges from DC to 400[㎒]. The ESD voltage waveform is nearly equal to the ESD current waveform and the peak amplitude of ESD current waveform is roughly proportional to the ESD voltage in each experimental conditions. A rapid approach results in a discharge voltage with a faster initial rise time than for a slow approach. The voltages caused by direct finger ESDs have an initial slope with a relatively long, 10∼30[ns] rise time, but the amplitude is small. On the other hand, the voltages caused by direct hand/metal ESDs have a steep initial s1ope with 1 ∼3[ns] rise time, but an initial spike is very big. As a consequence, it was found that the ESD voltage and current waveforms strongly depend on the approach speed and material of intruder. These measurement results would be useful to design the ESD protective devices.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.331-340
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• 2008

A method of measuring the current and voltage is suggested in the circuit of cold cathode fluorescent lamps (CCFLs) which are driven at a high frequency of $50{\sim}100\;kHz$ and a high voltage of several kV. It is difficult to measure the current and voltage in the lamp circuit, because the impedance of the probe at high voltage side causes the leakage current and the variation of luminance. According to the analysis of equivalence circuit with the probe impedance and leakage current, the proper measuring method is to adjust the input DC voltage and to keep the specific luminance when the probe is installed at a high voltage circuit. The lamp current is detected with a current probe or a high frequency current meter at the ground side and the voltage is measured with a high voltage probe at the high voltage side of lamp. The lamp voltage($V_C$) is measured between the ballast capacitor and the lamp electrode, and the output voltage($V_I$) of inverter is measured between inverter output and ballast capacitor. As the phases of lamp voltage($V_C$) and current ($I_G$) are nearly the same values, the real power of lamp is the product of the lamp voltage($V_C$) by the lamp current($I_G$). The measured value of the phase difference between inverter output voltage($V_I$) and lamp current($I_G$) is appreciably deviated from the calculated value at $cos{\theta}=V_C/V_I$.