• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.120-124
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• 2000

In this paper, the effect of magnetic field was measured on NOx(NO+NO2) removal and consumption power for wire-plate plasma reactor with magnetic field applied to electric field vertically. NOx of the simulated diesel engine flue gas were removed by the corona discharge generated by DC, AC and Pulsed voltages in wire-plate reactor. Consumption power increased with discharge voltage. However, when magnetic field was applied to electric field vertically, consumption power slightly decreased. NOx removal rate and arc transition voltage for plasma reactor with magnetic field were higher than those for plasma reactor without magnetic field. Consumption power decreased, however NOx removal significantly increased, when water vapour bubbled by dry air was put into simulated flue gas.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.1-5
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• 2013

In this paper, we investigated the etching characteristics of the TaN thin films and the surface reaction of TaN thin films after etching process. The etching characteristics of the TaN thin films were carried out using inductively coupled plasma (ICP). The etch rate and the selectivity of TaN to $SiO_2$ and TaN to PR were measured by varying the gas mixing ratio, RF power, DC-bias voltage, and process pressure in CF-based plasma. The surface reaction of TaN thin films were determined by x-ray photoelectron spectroscopy (XPS).

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.12
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• pp.1992-1999
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• 2016

The plasma process is applied to various industrial fields such as high-tech IT industry, textiles and medical. Therefore, there is increasing interest in the plasma power supply, and demand for power devices of high efficiency and high power density is increased. Plasma power supply for process must solve the arc problem, when the plasma is unstable. The output capacitor is closely related to the arc problem. If the output capacitor is smaller, the damage from the arc problem is reduced. However, the small value of the output capacitor affects the operating characteristics of the power supply. In this paper, a LLC resonant converter is adopted, because it can achieve high efficiency and power density in the plasma DC power supply. However, due to the small value of the output capacitor, the converter is operated as a LLCC resonant converter. Therefore, a gain characteristic of LLCC resonant converter is analyzed by using the FHA (First Harmonic Approximation) in plasma power supply. Simulation and experimental results are presented to verify the characteristic analysis of LLCC Resonant Converter.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.40-40
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• 1999

가속기나 토카막과 같은 거대한 진공 장치의 용기 내벽을 청정화 하기 위해서는 용기 전체의 열처리(굽기, Baking)와 글로우 방전(Glow discharge) 법을 병행하여 사용한다. Baking은 일반 기체(N2, O2, 그리고 CO2)와 물(H2O)의 탈착에 효과적이고, Glow discharge cleaning은 탄소(Carbon-based)와 산소(Oxygen-based) 화합물의 탈착에 효과적이다. 특히 Glow discharge cleaning의 경우에는 전극의 모양, 진공 용기의 재질과 모양, 전극간의 거리, 사용되는 반응 기체의 압력 등에 따라 그 효과에 큰 차이가 있으므로 다각적인 연구가 필요하다. 본 연구에서는 그림 1과 같이 시험용 스테인레스(AISI 304와 AISI 316LN) 진공 용기를 설치하고, 시험 용기의 한쪽은 배기 용기와 oriffice로, 다른 편은 불순물의 정성.정량 분석을 위해 RGA(Residual gas analyser) 용기와 oriffice로 연결하였다. 전체 시스템 중에서 배기 부분과 분석 부분은 15$0^{\circ}C$에서 24시간 가열하여 전체의 기저 진공도를 1$\times$10-8Torr로 하였다. 기저 진공도의 용기에 고순도의 반응기체 (He, Ar, Ar+He, Ar+H2, Ar+N2 등)를 주입한후, DC 전압(0.8~1.5kV)을 변화하며 글로우 방전의 최적조건을 찾았다. 방전 동안 시험용 용기에서 방출되는 반응 기체 이외의 기체를 RGA로 측정하였고 외부에 Thermocouple을 여러곳에 장착하여 온도 변화를 측정하였다. 이상의 결과로부터 진공 용기 표면적으로부터의 불순물 탈착(desorption)과 불순물 분석, 플라즈마와 내벽의 상호작용등에 대한 결론을 얻을 수 있었다. 또한 Baking과 Glow discharge cleaning을 동시에 수행하여 Baking 온도의 낮춤에 따른 영향 평가도 수행하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.131-131
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• 1999

비정질 카본 박막은 다이아몬드와 유사한 높은 경도, 내마모성, 윤활성, 전기절연성, 화학적 안정성, 그리고 광학적 특성을 가진 재료로서 플라즈마 CVD를 이용한 합성방법으로 제조된 박막이 주로 연구되고 있다. 본 연구에서는 마그네트론 스퍼터링을 이용하여 다양한 조건의 카본 박막을 제조하였다. 카본 박막의 제조는 이온빔이 장착된 고진공 증착 장치를 이용하였고 시편의 청정시 사용된 이온빔의 조건은 빔 전압이 500V, 빔 전류는 0.1mA/cm2로 기판 청정을 거친 후 DC 마그네트론 스퍼터링을 이용하여 흑연을 증발시켜 박막을 제조하였다. 기판과 타겟의 거리는 13cm로 고정시킨 후 타겟 전류는 1A로 유지하면서 30분간 증착하였다. 기판은 Si-wafer와 glass를 주로 사용하였으며 기판 인가전압, 아세틸렌 유량, 기판 온도등을 변화시켜가면서 각각 카본 박막을 제조하였다. 비정질 카본박막의 막은 평균 두께는 0.4~1.2$\mu\textrm{m}$이며 SEM을 이용하여 단면의 성장구조를 관찰하였다. 라만 분광분석과 FTIR 분광분석을 통하여 비정질 카본 박막의 결합특성을 조사하였고 scratch tester를 이용하여 박막의 밀찰력을 관찰하였다. 제조된 박막의 두께는 아세틸렌 가스 이용시 1$\mu\textrm{m}$ 이상의 박막의 제조가 가능하였으며 카본 박막의 라만 분광특성은 고체 탄소 물질의 S와 G-peak으로 구성되어 있으며 기판 인가전압, 아세틸렌 가스 유량 변화에 따른 peak의 위치 이동 및 FWHM의 변화를 관찰하였다. RFIR 결과는 아세틸렌 가스의 유량이 증가에 따라 C-H 결합 분포가 증가며 기판 인가 전압이 증가할수록 C-H 결합분포가 감소하는 경향이 나타냈다. 이는 이온 충돌 효과에 따라 결합력이 약한 C-H 결합이 우선적으로 파괴되는 현상으로 생각되어 진다. Scartch tester 측정 결과 박막의 밀착력은 실험조건에 따른 경샹성은 보이고 있지 않으나 10N 정도이며 60N 이상의 강한 밀착력을 가진 박막도 제조되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.213-216
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• 2001

Etching behaviors of ferroelectric YMn $O_3$ thin films were studied by an inductively coupled plasma (ICP). Etch characteristic on ferroelectric YMn $O_3$ thin film have been investigated in terms of etch rate, selectivity and etch profile. The maximum etch rate of YMn $O_3$ thin film is 300 $\AA$/min at Ar/C $l_2$ of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of 3$0^{\circ}C$. Addition of C $F_4$ gas decrease the etch rate of YMn $O_3$ thin film. From the results of XPS analysis, Y $F_{X}$ compunds were found on the surface of YMn $O_3$ thin film which is etched in Ar/C1/C $F_4$ plasma. The etch profile of YMn $O_3$ film is improved by addition of C $F_4$ gas into the Ar/C $l_2$ plasma. These results suggest that fluoride yttrium acts as a sidewall passivants which reduce the sticking coefficient of chlorine on YMn $O_3$.>.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.564-568
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• 2003

The etching of Au thin films have been performed in an inductively coupled CF$_4$/Cl$_2$/Ar plasma. The etch rates were measured as CF$_4$ contents added from 0 to 30 % to Cl$_2$/Ar plasma, of which gas mixing ratio was fixed at 20%. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. The highest etch rate of the Au thin film was 3700 $\AA$m/min at a 10% additive CF$_4$ into Cl$_2$/Ar plasma. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. XPS analysis indicated that Au reacted with Cl and formed Au-Cl, which is hard to remove on the surface because of its high melting point. The etching products could be sputtered by Ar ion bombardment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.182-185
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• 2003

Etching characteristics of (PB,Sr)$TiO_3$(PST) thin films Were investigated using inductively coupled chlorine based plasma system as functions of gas mixing ratio, RF power and DC bias voltage. It was found that increasing of Ar content in gas mixture' lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is 562 ${\AA}$/min and the selectivity of PST film to Pt is 0.8 at $Cl_2/(Cl_2+Ar)$ of 20 %. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.65 no.3
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• pp.216-218
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• 2016

In this study, we used not chemical and physical synthesis method but the solution plasma sputtering method in the synthesis of silver nano-particles. Synthesis of all the silver nano-particles was conducted for 1hour in 360 ml of distilled water and characteristics of changing the input voltage and frequency of the synthesised silver nano-particles by using the solution plasma sputtering method were analyzed through FE-SEM(Field Emission-Scanning Electron Microscope). We changed the input voltage from 8 kV to 10 kV in steps of 1 kV, input frequency from 20 kHz to 30 kHz in steps of 5 kHz in the solution plasma reactor with the advanced device which can control the DC voltage and frequency. We confirmed that the size of silver nano-particles were larger according to the change of the input voltage and frequency.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.6
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• pp.71-79
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• 2008

In the manufacture of flat panel display devices, there is a strong demand for contactless glass panel handling devices that can manipulate a glass panel without contaminating or damaging it. To fulfill this requirement, an electrostatic suspension device far glass panels where the glass panel is supported by electrostatic forces without any mechanical contact is proposed. To implement the system with low cost and compactness, switched-voltage control scheme that is based on the relay feedback control is utilized. Relay feedback control method deploys only a single high-voltage power supply that can deliver a DC voltage of positive and/or negative polarity and thus high voltage amplifiers that are costly and bulky are not needed any more. It is shown that despite the inherent limit cycle property of the relay feedback based control, an excellent performance in vibration suppression is attained due to the presence of a relatively large squeeze film damping originating from the electrodes and levitated object. Using this scheme, a $100{\times}100mm^2$ glass panel was levitated stably with airgap variation decreasing down to $1\;{\mu}m$ at an airgap of $100\;{\mu}m$.