Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Etching Characteristics of the TaN Thin Films Using Inductively Coupled Plasma

유도 결합 플라즈마를 이용한 TaN 박막의 건식 식각 특성

  • Li, Chen (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Joo, Young-Hee (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Han-Soo (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Choi, Kyung-Rok (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
  • 진려 (중앙대학교 전자전기공학부) ;
  • 주영희 (중앙대학교 전자전기공학부) ;
  • 우종창 (중앙대학교 전자전기공학부) ;
  • 김한수 (중앙대학교 전자전기공학부) ;
  • 최경록 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • Received : 2012.08.10
  • Accepted : 2012.11.21
  • Published : 2013.01.01
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Abstract

In this paper, we investigated the etching characteristics of the TaN thin films and the surface reaction of TaN thin films after etching process. The etching characteristics of the TaN thin films were carried out using inductively coupled plasma (ICP). The etch rate and the selectivity of TaN to $SiO_2$ and TaN to PR were measured by varying the gas mixing ratio, RF power, DC-bias voltage, and process pressure in CF-based plasma. The surface reaction of TaN thin films were determined by x-ray photoelectron spectroscopy (XPS).

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References

  1. M. H. Shin, S. W. Na, N. E. Lee, T. K. Oh, J. Y. Kim, T. H. Lee, and J. H. Ahn, Jpn. J. Appl. Phys., 44, 5811 (2005). https://doi.org/10.1143/JJAP.44.5811
  2. J. A. Wilks, N. P. Magtoto, J. A. Kelber, and V. Arunachalam, Appl. Sur. Sci., 253, 6176 (2007). https://doi.org/10.1016/j.apsusc.2007.01.020
  3. A. Vandooren, A. Barr, L. Mathew, T. R. White, S. Egley, D. Pham, M. Zavala, S. Samavedam, J. Schaeffer, J. Conner, B. Y. Nguyen, and B. E. White, IEEE Elec. Dev. Lett., 24, 342 (2003). https://doi.org/10.1109/LED.2003.812525
  4. H. Shimada and K. Maruyama, Jpn. J. Appl. Phys., 43, 1768 (2004). https://doi.org/10.1143/JJAP.43.1768
  5. A. M. Efremov, D. P. Kim, and C. I. Kim, Vacuum, 75, 133 (2004). https://doi.org/10.1016/j.vacuum.2004.01.077
  6. F. A. Khan, L. Zhou, V. Kumar, I. Adesida, and R. Okajie, Mat. Sci. Eng., B118, 201 (2005).
  7. S. M. Koo, D. P. Kim, K. T. Kim, and C. I. Kim, Mat. Sci. Eng., B118, 201 (2005).
  8. F. A. Khan and I. Adesida, Appl. Phys. Lett., 75, 2268 (1999). https://doi.org/10.1063/1.124986
  9. P. Lamour, P. fioux, A. Ponche, M. Nardin, M. F. Vallat, P. Dugay, J. P. Brun, N. Moreaud, and J. M. Pinvidic, Surf. Interface Anal., 40, 1430 (2008). https://doi.org/10.1002/sia.2919