• Journal of the Korean Vacuum Society
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• 제20권2호
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• pp.114-126
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• 2011

The light propagation along a long positive column has been observed in a cold cathode fluorescent lamp. The optical signals are observed with the DC and AC voltage power during lamp operation. The light propagating is observed in the operation with the DC-rippled voltage as well as the AC-voltage. The optical signals propagate from the high voltage side to the ground. These signals show two kinds of features according to the before and after Townsend breakdown. At the dark current before Townsend breakdown, the optical intensity is damped and the propagation velocity is $10^4{\sim}10^5m/s$. At the high current of normal glow after Townsend breakdown, the propagation velocity is 1$10^5{\sim}10^6m/s$ without damping.

• Journal of the Korean institute of surface engineering
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• 제49권1호
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• pp.92-97
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• 2016

The plasma has been used in various industrial fields of semiconductors, displays, transparent electrode and so on. Plasma diagnostics is critical to the uniform process and the product. We use the electron temperature of the various plasma parameters for the diagnosis of plasma. Generally, the range of the electron temperature which is used in a semiconductor process used the range of 1 eV to 10 eV. The difference of electron temperature of 0.5 eV has a influence in plasma process. The electron temperature can be measured by the electrical method and the optical method. Measurement of electron temperature for various gas flow rates was performed in DC-magnetron sputter and Inductively Coupled Plasma. The physical properties of the thin film were also determined by changing electron temperatures. The transmittance was measured using the integrating sphere, and wavelength range was measured at 300 ~ 1100 nm. We obtain the thin film of the mobility, resistivity and carrier concentration using the hall measurement system. As to the electron temperature increase, optical and electrical properties decrease. We determine it was influenced by the oxygen flow ratio and plasma.

• Journal of the Korean institute of surface engineering
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• 제41권3호
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• pp.83-87
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• 2008

This study described the effects of RF power, DC bias voltage, chamber pressure and gas mixing ratio on the etch rates of TiN thin film and selectivity of TiN thin film to $SiO_2$ with $BCl_3$/Ar gas mixture. When the gas mixing ratio was $BCl_3$(20%)/Ar(80%) with other conditions were fixed, the maximum etch rate of TiN thin film was 170.6 nm/min. When the DC bias voltage increased from -50 V to -200 V, the etch rate of TiN thin film increased from 15 nm/min to 452 nm/min. As the RF power increased and chamber pressure decreased, the etch rate of TiN thin film showed an increasing tendency. When the gas mixing ratio was $BCl_3$(20%)/Ar(80%) under others conditions were fixed, the intensity of optical emission spectra from radical or ion such as Ar(750.4 nm), $Cl^+$(481.9 nm) and $Cl^{2+}$(460.8 nm) was highest. The TiN thin film was effectively removed by the chemically assisted physical etching in $BCl_3$/Ar ICP plasma.

• Journal of Korean Society of Environmental Engineers
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• 제22권2호
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• pp.211-216
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• 2000

In this paper, experimental investigations were carried out to remove NOx, SOx simultaneously from a simulated combustion flue gas [$NO(0.02%)-SO_2(0.08%)-CO_2-Air-N_2$] by using a pulse corona induced plasma chemical processing. Discharge domain of wire-cylindrical plasma reactor was separated from a gas flow duct to avoid unstable discharge by aerosol particle deposited on discharge electrode and grounded electrode. The NOx, SOx removal was experimentally investigated by a reaction induced to ammonium nitrate, ammonium sulfate using a low price of aqueous NaOH solution and a small quantity of ammonia. Volume percentage of aqueous NaOH solution used was 20% and $N_2$ flow rate was $2.5{\ell}/min$ for bubbling aqueous NaOH solution. Ammonia gas(l4.82%) balanced by argon was diluted by air and was introduced to a main simulated flue gas duct through $NH_3$ injection system which was in downstream of reactor. The $NH_3$ molecular ratio(MR) was determined based on [$NH_3$] and [$NO+SO_2$]. MR is 1.5. The NOx removal rates increased in the order of DC, AC and pulse, but SOx removal rates was not significantly effected by source of electricity. The NOx removal rate slightly decreased with increasing initial concentration. but SOx removal rate was not significantly affected by initial concentration. The NOx, SOx removal rates decreased with increasing gas flow rate.

• Applied Chemistry for Engineering
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• 제9권6호
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• pp.829-834
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• 1998

Concerned with environmental issue, a new decomposition method for CFCs that caused the destruction of ozone layer was proposed. Using thermal plasma process, CFC113 decomposed completely. In order to quantify the tendency in decomposition and recombination of CFC113, thermodynamic equilibrium calculations were performed. The calculation was conducted with CFC113, $H_2$, $O_2$ at 1 atm and 300 K~5000 K. In the experiment, products which are generated after decomposition in the plasma were examined by varying reacting gases($H_2$, $O_2$) flow rates and the changes of inside diameters of quenching tubes. Decomposition products were analyzed using Gas Chromatograph. The results are very promising with a decomposition efficiency greater than 99.99%. As to CFC113/$H_2$=1/3, conversion to CO decreased with increasing $O_2$ ratio. When CFC113/$O_2$=1/1, 1/1.5 and 1/2, conversion to CO increases above $H_2$ ratio of 3. The change of CO conversion is not sensitive to power changes. As total flow rate increased, CO conversion was slightly decreased. When the inside diameter of the quenching tube was changed from 8mm into 4mm, CO conversion was increased due to enhanced quenching rate.

• Microbiology and Biotechnology Letters
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• 제40권4호
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• pp.403-408
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• 2012

Gelatin/Ag nanoparticle (AgNP) biocomposite was synthesized using the solution plasma process (SPP) that has been recently introduced as an effective method for synthesis of nanoparticles. In this study, gelatin/AgNP biocomposite was synthesized using various concentrations of Ag precursor ($AgNO_3$) and gelatin in the range of 1-5 mM and 1-3% (w/w), respectively, without using any chemical reducing agent. Physical properties of the gelatin/AgNP biocomposites were analyzed using EDS, FE-SEM, and TEM. The results indicated that spherical AgNPs with approximately 12~20 nm in diameter were synthesized successfully in the gelatin matrix by SPP. As the concentration of gelatin was increased (3%, w/w), disperse stability of AgNP was improved and micro-pores of gelatin became smaller and denser in the 3D scaffold. Bactericidal activity of the AgNPs was examined against Staphylococcus aureus and Escherichia coli by measuring zone of growth inhibition and decrease in colony forming unit (CFU). CFUs of S. aureus and E. coli were decreased approximately to 56% and 0%, respectively, by the gelatin/AgNP biocomposite, Ag5G3.

• Journal of the Korean Chemical Society
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• 제50권1호
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• pp.14-22
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• 2006

the basic model of chemical reactor using glow discharge, we used cathode discharge cell with vacant cavity in the middle. Currently glow discharge is widely studied as a radiation source or atomization device in atomic spectroscopy and remarkable technological achievements are made through the graft with other analysis devices such as microanalysis and steel analysis.1 Additionally, as the characteristics of basic glow discharge and radiation have been reviewed many times, those results could be used in this experiment.2-3 In 1993, an article regarding the treatment of poisonous gas in the air using low temperature plasma was published. According to this article, if DC Glow Discharge is used under continuous atmospheric flow, poisonous gases such as SO2 and NO can be removed.4 Based on those findings, we designed highly efficient reactor where stable air plasma is composed and all air flow pass the negative glow area passing through the tube. It was observed that the cathode tube type glow discharge developed in this study would be economical, easy to use and could be used as radiation source as well.

• Proceedings of the KIEE Conference
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1550-1552
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• 1999

In this study, (Ba,Sr)$TiO_3$ thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) as a function $CF_4$/Ar gas mixing ratio. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1700{\AA}$/min under $CF_4/(CF_4+Ar)$ of 0.1, 600W/350V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the (Ba,Sr)$TiO_3$ etching. To analysis the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

• Journal of the Korean institute of surface engineering
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• 제42권6호
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• pp.256-259
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• 2009

The wafer surface temperature is an important parameter in the etching process which influences the reaction probabilities of incident species, the vapor pressure of etch products, and the re-deposition of reaction products on feature surfaces. In this study, we investigated all of the effects of substrate temperature on the etch rate of $ZrO_2$ thin film and selectivity of $ZrO_2$ thin film over $SiO_2$ thin film in inductively coupled plasma as functions of $Cl_2$ addition in $BCl_3$/Ar plasma, RF power and dc-bias voltage based on the substrate temperature in range of $10^{\circ}C$ to $80^{\circ}C$. The elements on the surface were analyzed by x-ray photoelectron spectroscopy (XPS).

• The Transactions of the Korean Institute of Electrical Engineers P
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• 제61권3호
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• pp.116-121
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• 2012

Recently, in the field of renewable energy such as solar cells including the semiconductor and display industries, thin film deposition process is being diversified. Furthermore, to deal with trend of making high-quality and fast, the high-capacity and output plasma power supply which can control high density plasma is required. The biggest problem is arc discharge caused by using high voltage power supply. Thus, the key function of plasma power supply is to prevent arc discharge and there is a need to maintain the possible minimum arc energy. In DC sputtering power supply, on a periodic basis (-)voltage powering up is able to significantly reduce arcing, as well as arc discharge prevention, and maintaining uniform charge density. This conventional method for powering up (-)voltage requires heavy mutual inductance of the transformer to avoid distortion problem of the output voltage. This study is about energy recovery circuit for arc discharge prevention in sputtering plasma power supply. By using energy recovery circuit, it is possible to reduce the mutual inductance and size of the transformer dramatically, prevent distortion of the output voltage and has a stable output waveform. This work was proved through simulation and experimental study.