• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1051-1056
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• 2008

In this study, the investigations of the TiN etching characteristics were carried out with addition of $Cl_2$ gas in an inductively coupled $BCl_3$-base plasma system. Dry etching of the TiN was studied by varying the etching parameters including $Cl_2$ gas addition ratio, RF power, DC-bias voltage and pressure. The etch rate of TiN thin film was maximum when the $Cl_2$ gas addition flow was 2 sccm with fixed other conditions. As the RF power DC-bias voltage were increased, the etch rate of TiN thin film showed increasing tendency. $BCl_3/Cl_2$/Ar plasmas were characterized by optical emission spectroscopy (OES) analysis. The chemical reaction on the surface of the etched TiN films was investigated with X-ray photoelectron spectroscopy (XPS).

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.911-914
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• 1992

We have investigated the micro-discharge in plasma display panel using 2 dimensional 2 fluid MHD equations. Plasma display utilizes the physical phenomena of the normal glow or abnormal glow and is considered to be able to provide the largest display area among various flat panel. 2 fluid, 2 dimensional Magneto-Hydro-Dynamic equations are applied to Computational field of 100${\times}$800${\mu}m^2$. Time varing glows and after-glows were investigated for 11 $\mu$sec. We obtained the distribution of the microscopic variables such as the density, temperature, velocity of Ne+Ar0.1% gas plasma. During the first 6$\mu$ sec, glow discharge dued to DC pulse was investigated. Time varing phenomena of after-glow was also investigated during the last 5 $\mu$set. From results, it was found that the driving efficiency of a DC Plasma Display Panel could be improved when the diffusion of ions and electrons are controlled by the pulses applied to the auxiliary anode.

• Proceedings of the KIPE Conference
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• 2012.11a
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• pp.251-252
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• 2012

ITER(국제핵융합실험로) 제어시스템은 중앙제어와 Plant System으로 구성되며 CODAC, Central Interlock, Central Safety System으로 구분된다. 초전도자석에 전류를 공급하는 AC/DC 컨버터 시스템은 2상한, 4상한 구조의 전원 장치, 초기 플라즈마 발생에 필요한 Switching Network Unit, 코일에 저장된 에너지의 급속 방전을 위한 Fast Discharge Unit 및 무효 전력 보상장치로 구성된다. 4상한 전원장치는 1, 2, 4, 6대의 전원 장치가 직렬 접속되어 무효전력 발생이 최소로 하도록 제어된다. 대용량의 무효전력이 급격히 변화는 환경에서 계통 전압을 유지하기위해 무효전력보상장치는 각 전원 장치가 예측한 무효전력 값을 이용하여 제어한다. 본 논문은 ITER 전원 장치를 운전하기 위한 제어시스템의 개요와 예비설계 결과이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.640-648
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• 2002

This study is to develop electromagnetic-catalyst application plasma reactors for indoor air purification. Nitrogen Oxide(NOx) removal characteristics are measured in the electromagnetic catalyst application plasma reactors with various parameters and the effect of catalyst or/and magnetic field are investigated on the NOx removal. And AC or DC high voltage is applied for corona discharge, flow rates are 150~1500 $\ell/min$ and NO initial concentration is about 10 ppm. $Mn0_2$ and $TiO_2$ catalysts to increase NOx removal rate are used. In the results, NOx removal rate by AC power is about 10 % higher than that by DC power under the experimental condition of 700 $\ell/min$, 5 magnets, $MnO_2$ and $Ti)_2$ catalysts. When magnet is applied to the reactor, NOx removal rate increased. Also, the reactor with $MnO_2$ and $Ti)_2$ catalyst and magnet have the best removal rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.382-382
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• 2010

The etch characteristics of the $HfAlO_3$ thin films and selectivity of $HfAlO_3$ to $SiO_2$ in $Cl_2/BCl_3$/Ar plasma were investigated in this work. The maximum etch rate was 108.7 nm/min and selectivity of $HfAlO_3$ to $SiO_2$ was 1.11 at $Cl_2$(3sccm)/$BCl_3$(4sccm)/Ar(16sccm), RF power of 500 W, DC-bias voltage of - 100 V, process pressure of 1 Pa and substrate temperature of $40^{\circ}C$. As increasing RF power and DC-bias voltage, etch rates of the $HfAlO_3$ thin films increased. Whereas as decreasing of the process pressure, those of the $HfAlO_3$ thin films were increased. The chemical reaction on the surface of the etched the $HfAlO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.645-649
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• 2009

We investigated the effects of a high density $O_2$ plasma treatment on the structural and electrical properties of Ga-, B- codoped ZnO (GZOB) films. The GZOB films were deposited on polymer substrate without substrate heating by DC magnetron sputtering. Prior to the GZOB film growth, we treated a polymer substrate with highly dense inductively coupled oxygen plasma. The optical transmittance of the GZOB film, about 80 %, was maintained regardless of the plasma pre-treatment. The resistivity of the GZOB film on PC substrate decreased from 9.08 ${\times}$ $10^{-3}$ ${\Omega}-cm$ without an $O_2$ plasma pre-treatment to 2.12 ${\times}$ $10^{-3}$ ${\Omega}-cm$ with an $O_2$ plasma pre-treatment. And PES substrate decreased from 1.14 ${\times}$ $10^{-2}$ ${\Omega}-cm$ without an $O_2$ plasma pre-treatment to 6.13 ${\times}$ $10^{-3}$ ${\Omega}-cm$ with an $O_2$ plasma pre-treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.393-394
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• 2008

Carbon nanotubes are attractive nano-structured materials because of their remarkable electronic, physical, chemical properties. Due to these reasons, application researches of CNTs are actively processed on the display, the electronic element, the nano-diode fields and the semiconductor element. Today, The major issue of semiconductor technique are via and interconnects. CNTs are used to make via and interconnects because of high electric currents density and high heat transfer. Control of the orientation of grown CNTs is very important thing for making via and interconnects. Via are horizontal growth of CNTs and interconnects are vertical growth of CNTs. This research is based on the experiment using control of gas flow directions and DC bias. Scanning Electron Microscope (SEM) was used to check this experiment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.57-57
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• 2009

In this work, we carried out the variation of surface characteristics of organic polymer films by O2 plasma. The plasma diagnostics were performed by DLP(Double Langmuir Probe) and OES(Optical Emission Spectroscopy) measurements. Moreover, variation of surface characteristics were measured by AFM(Atomic Force Microscope), XPS(X-ray Photoelectron Spectroscopy), and contact angle goniometer. It was found that the etch rate of organic films was controlled by O radicals flux and dc bias voltage. And O radical density and dc bias voltage increased with increasing bias power. So, it was changed surface energy as a function of surface roughness and O/C ratio in organic films.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.18 no.3
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• pp.135-141
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• 2004

A sterilizer equipment by using electrical energy has metrits that no process of chemical and no second environmental pollution, Also, the power conversion circuit for sterilizer equipment has mertis that are reducing switching loss for soft switching topology by using zero current and zero voltage switching, and miniaturizing size of equipment. The proposed power device which has lower output current than other devices is possible to be compacted in it's size reduced it's price if the proposed power device is used for power system. Therefore, it is adapted for both less power consumption and sudden power conversion

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.867-869
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• 1999

In this study, $SrBi_{2}Ta_{2}O_{9}$(SBT) thin films were etched as a function of $SF_6$/Ar gas mixing ratio in magnetically enhanced inductively coupled plasma(MEICP) system fer a fixed rf power, dc-bias voltage, and chamber pressure. The etch rate of SBT thin film was $1500{\AA}/min$ and the selectivities of photoresist (PR) and $SiO_2$ to SBT thin film were 0.48 and 0.62, respectively when the samples were etched at a rf power of 600W, a dc-bias voltage of -150V, a chamber pressure of 10 mTorr and a gas mixing ratio of $SF_6/(SF_6+A)$=0.1. In order to examine the chemical reactions on the etched surface, X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry(SIMS) were done.