• Korean Journal of Materials Research
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• v.33 no.11
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• pp.497-501
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• 2023

ZnO/Cu/ZnO (ZCZ) thin films were deposited at room temperature on a glass substrate using direct current (DC) and radio frequency (RF, 13.56 MHz) magnetron sputtering and then the effect of post-deposition electron irradiation on the structural, optical, electrical and transparent heater properties of the films were considered. ZCZ films that were electron beam irradiated at 500 eV showed an increase in the grain sizes of their ZnO(102) and (201) planes to 15.17 nm and 11.51 nm, respectively, from grain sizes of 13.50 nm and 10.60 nm observed in the as deposited films. In addition, the film's optical and electrical properties also depended on the electron irradiation energies. The highest opto-electrical performance was observed in films electron irradiated at 500 eV. In a heat radiation test, when a bias voltage of 18 V was applied to the film that had been electron irradiated at 500 eV, its steady state temperature was about 90.5 ℃. In a repetition test, it reached the steady state temperature within 60 s at all bias voltages.

• Journal of the Korean institute of surface engineering
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• v.56 no.6
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• pp.451-456
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• 2023

Transparent conducting films having a three layered structure of ZnO/Cu/ZnO (ZCZ) were deposited onto the glass substrates by using RF and DC magnetron sputtering at room temperature. The emissivity and opto-electrical properties of the films were investigated with a varying thickness(5, 10, 15 nm) of the Cu interlayer. With increasing the Cu thickness to 15 nm, the films showed a enhanced electrical properties. Although ZnO 30/Cu 15/ZnO 30 nm film shows a lower resistivity of 5.2×10^-5 Ωcm, it's visible transmittance is deteriorated by increased optical absorbtion of the films. In addition, X-ray diffraction patterns indicated that the insertion of Cu interlayer improve the grain size of ZnO films, which is favor for the electrical and optical properties of transparent conducting films. From the observed low emissivity of the films, it is concluded that the ZCZ thin films with optimal thickness of Cu interlayer can be applied effectively for the car's window coating materials.

• Journal of the Korean Society for Heat Treatment
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• v.28 no.3
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• pp.134-138
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• 2015

Ag intermediated $TiO_2$ films were deposited by RF and DC magnetron sputtering and then vacuum annealed at 100, 200 and $300^{\circ}C$ for 30 minutes to investigate the effect of annealing temperature on the structural and optical properties of the films. For all depositions, the thickness of the $TiO_2$ and Ag films were kept constant at 24 and 15 nm by controlling the deposition time. As-deposited $TiO_2/Ag/TiO_2$ trilayer films have a weak crystalline and an optical reflectance in a near infrared wavelength region of 77.8%, while the films annealed at $300^{\circ}C$ show the polycrystalline structure and an increased mean optical reflectance of 80.4%. From the experimental results, it can be concluded that increasing the annealing temperature enhanced the structural and optical properties of the $TiO_2/Ag/TiO_2$ films.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.40-44
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• 2000

In this paper, since the research on the etching of SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin film was few (specially Cl$_2$-base ), we had studied the surface reaction of SBT thin films using the OES in high density plasma etching as a function of rf power, dc bias voltage, and Cl$_2$/(C1$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction in our previous papers$^{1.2}$ . The change of Cl radical density that is measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhance to increase the etch rates of SBT thin films and these results were confirmed by XPS analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.413-413
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• 2013

대면적 터치패널은 현재까지 저항막 방식, 적외선, Camera 방식을 주로 사용하고 있다. 저항막 방식의 Sensitivity, 높은 가격, 적외선 방식의 경우 빛의 간섭에 의한 오동작이 일어날 수 있는 문제를 가지고 있다. 최근의 Mobile용 터치스크린은 정전용량 방식의 터치기술 채택으로 저항막, 적외선, Camera 방식의 모든 단점을 해소할 수 있으나 터치 스크린 면적이 커지게 되면서 요구저항을 맞출 수 없는 문제로 현재 크기의 제한적이다. 본 연구에서는 완전일체형 터치(G2 Touch Hybrid) 방식의 ITO 터치필름을 사용하지 않고, 강화유리 기판을 사용하여 저(低)저항, 고(高)투과, 대형화(15 Inch), 경량화를 고려한 Zero-gap ITO를 코팅한 커버 유리용 투명전극에 대하여 전기적, 광학적, 구조적, 표면적 특성을 분석하였다. ITO 박막의 두께를 최소화하여 패턴 인비저블의 특성을 갖는 것이 필요로 하는데, 이는 ITO박막 패턴후에 패턴이 보이지 않게 하기 위해서이며, 이러한 시장의 요구를 충족하기 위해 RF/DC 고자력 Magnetron Sputtering System을 사용하여 면저항 $80{\Omega}$/${\Box}$, 표면특성 Rp-v 2.1 nm, 최고 광투과율 90.5%@550 nm, 반사율 차이 0.5 이하의 특성을 확인하였다. 또한, 저항 경시변화를 줄이기 위해서 Sheath heater를 이용한 진공코팅 중 발생되는 BM Ink out-gassing을 줄여 out-gassing에 의한 박막 손상을 줄일 수 있었으며 진공 성막중 결정성을 갖는 ITO 막을 형성시킬 수 있었다.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.109-112
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• 2006

A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, $O_2$ plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.81-85
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• 2017

$SnO_2/Ag/Nb_2O_5/SiO_2/SnO_2$ multilayer films were prepared on glass substrate by sequential using RF/DC magnetron sputtering at room temperature. The influence of top $SnO_2$ layer thickness on optical and electrical properties of the multilayer films was investigated. Experimentally measured results exhibit transmittances over 84.3 ~ 85.8% at 550 nm wavelength. As the top $SnO_2$ layer thickness increased from 40 to 55 nm, the sheet resistance (Rs) increased from 5.81 to $6.94{\Omega}/sq$. The Haacke's figure of merit (FOM) calculated for the samples with various $SnO_2$ layer thicknesses was a maximum at 45 nm ($35.3{\times}10^{-3}{\Omega}^{-1}$).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.207-207
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• 2010

Both ZnO and GaN have excellent physical properties in optoelectronic devices such as blue light emitting diode (LED), blue laser diode (LD), and ultra-violet (UV) detector. The ZnO/GaN heterostructure, which has a potential to achieve the cost efficient LED technology, has been fabricated by using radio frequency (RF) sputtering, pyrolysis, metal organic chemical vapor deposition (MOCVD), direct current (DC) arc plasmatron, and pulsed laser deposition (PLD) methods. Among them, the PLD system has a benefit to control the composition ratio of the grown film from the mixture target. A 500-nm-thick ZnO film was grown by PLD technique on c-plane GaN/sapphire substrates. The post annealing process was executed at some varied temperature between from $300^{\circ}C$ to $900^{\circ}C$. The morphology and crystal structural properties obtained by using atomic force microscope (AFM) and x-ray diffraction (XRD) showed that the crystal quality of ZnO thin films can be improved as increasing the annealing temperature. We will discuss the post-treatment effect on film quality (uniformity and reliability) of ZnO/GaN heterostructures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.185-189
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• 2001

In this paper, since the research on the etching of SrBi$_2$Ta$_2$$O_{9}$(SBT) thin film was few (specially Cl$_2$-base) we had studied the surface reaction of SBT thin films. We have used the OES(optical emission spectroscopy) in high density plasma etching as a function of RF power, dc bias voltage, and Cl$_2$/(Cl$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction. The change of Cl radical density that was measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhanced to increase the etch rates SBT thin films. These results were confirmed by XPS(x-ray photoelectron spectroscopy) analysis.s.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.145-146
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• 2006

A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, O2 plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.