• 한국결정성장학회지
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• 제23권1호
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• pp.27-30
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• 2013

Catalyst-free graphene nano-sheets without substrates have been synthesized using fullerene and a high direct current (dc) pulse in the spark plasma sintering (SPS) process. Graphene nano-sheets were synthesized directly in the gas phase of carbon atoms which are generated from fullerene at a temperature of $600^{\circ}C$. Characterization has been carried out by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), Raman spectroscopy (Raman), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.334-337
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• 2002

The Quantum Hall Resistance(QHR) device which consists of GaAs/AlGaAs heterojunction structure is used for the realization of QHR Standard based on QHE. In order to characterize electrical contact resistances and dissipations of the device, it is slowly cooled down for eliminating thermal shock and unwanted noise. Then, the two properties are measured under 1.5 K and 5.15 T. Contact resistances are all within 1.2 Ω and longitudinal resistivities are all within 1 mΩ up to DC 90${\mu}$A. The results mean the device is operated well to realize the QHR Standard. To confirm it, the QHR Standard having the device is compared using a direct current comparator bridge with a 1 Ω resistance standard which the calibrated value is known from QHR standards maintained by other countries. The difference between them is agreed well within measurement uncertainty. It is thus considered that the properties of the device is estimated well and has good performance.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권5호
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• pp.554-562
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• 2015

This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width ($W_{fin}$) and the height of GaN layer ($H_{GaN}$) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/GaN FinFET.

• 한국기계가공학회지
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• 제13권2호
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• pp.89-93
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• 2014

Variable polarity (VP) arc welding is known as an effective solution for aluminum thanks to the cleaning effect, which means oxide removal, during the DCEP (direct current electrode positive) period. In this research, VP GTAW (gas tungsten arc welding) is adopted for lap joint fillet welding of 3mm thickness 5052 aluminum alloy. Various welding currents and DCEP duty cycles are applied as welding conditions with a fixed welding speed to investigate the influence of DCEP characteristics on weld bead formation. Results show a tendency of higher heat input for higher DCEP duty cycle, which result does not follow conventional arc theory because it is known that DCEN (DC electrode negative) polarity is more efficient for heat input than is DCEP. This phenomenonhas recently been reported by several VP-GTA researchers and is still controversial because the mechanism of oxide removal is not yet clear except for the previous, well-known idea of "ion bombardment", which cannot explain the situation. Finally, proper usage conditions for VP-GTAW are suggested; then, further, related theoretical topics in the field of cathode physics are brieflyintroduced.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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• pp.284-285
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• 2000

광굴절률 현상은 optical signal processing과 홀로그램 기억소자로 널리 응용 될 수 있기 때문에 지금까지 광범위하게 연구되어져 왔다. 광굴절률 현상에서 중요한 변수는 빛이 있는 동안 drift, diffusion 과 photovoltaic current와 같은 전하 운반 메카니즘을 통해서 local charge의 재분포에 따른 공간전하장(Space-charge field, $E_{sc}$ )이다. 지금까지 single beam에 의한 공간전하장을 측정하는 방법으로 birefringenc $e^{1.2}$ 와 interference metho $d^{3}$을 이용하여 굴절률 변화를 측정함으로써 얻을 수 있었다. 그러나 이런 방법들은 공간전하장의 변화를 측정하기위해서 전기광학계수를 측정하여 얻는 간접적인 방법이고 또한 실험방법도 다소 복잡하다. 따라서 본 투고에서는 이미 발표된 광굴절률 현상시 제 2 고조파 세기(SHG)의 변화로부터 공간전하장을 간단하게 측정하는 방법을 이용하여 congruent, MgO가 4mole%, F $e_2$O가 0.1mole% 첨가된 LiNb $O_3$ 단결정의 공간전하장에 대해서 연구를 하였다. 이 방법은 전기광학물질인 LiNb $O_3$에서 SHG 위상정합조건이 dc 전기장에 의존하는 성질을 이용한 것이다. 그리고 온도가 일정할 경우 전기장의 변화에 따라 SHG의 크기가 변함을 이용하였다. (중략)

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.207-207
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• 2010

Both ZnO and GaN have excellent physical properties in optoelectronic devices such as blue light emitting diode (LED), blue laser diode (LD), and ultra-violet (UV) detector. The ZnO/GaN heterostructure, which has a potential to achieve the cost efficient LED technology, has been fabricated by using radio frequency (RF) sputtering, pyrolysis, metal organic chemical vapor deposition (MOCVD), direct current (DC) arc plasmatron, and pulsed laser deposition (PLD) methods. Among them, the PLD system has a benefit to control the composition ratio of the grown film from the mixture target. A 500-nm-thick ZnO film was grown by PLD technique on c-plane GaN/sapphire substrates. The post annealing process was executed at some varied temperature between from $300^{\circ}C$ to $900^{\circ}C$. The morphology and crystal structural properties obtained by using atomic force microscope (AFM) and x-ray diffraction (XRD) showed that the crystal quality of ZnO thin films can be improved as increasing the annealing temperature. We will discuss the post-treatment effect on film quality (uniformity and reliability) of ZnO/GaN heterostructures.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.401-401
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• 2011

In this work, we deposited Al2O3doped ZnO (AZO) thin films by direct current (DC) magnetron sputtering method with a $40^{\circ}$ tilted target, for application in the front layer of thin film solar cell. Wet chemical etching behavior of AZO films was also investigated. In order to optimize textured AZO films, oxalic acid ($C_2H_2O_4$)has been used as wet etchant of AZO film. In this experiment we used 0.001% concentration of oxalic acid various etching time, that showed an anisotropy in etching texture of AZO films. Electrical resistivity, Hall mobility and carrier concentration measurements are performed by using the Hall measurement, that are $6{\times}10^{-4}{\Omega}cm$, $20{\sim}25cm^2/V-s$ and $4{\sim}6{\times}10^{20}$, respectively.

• 한국태양에너지학회 논문집
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• 제28권1호
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• pp.33-42
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• 2008

Zr-O ($Zr-ZrO_2$) cermets solar selective coatings with a double cermets layer film structure were prepared using a DC (direct current) magnetron sputtering method. The typical film structure from surface to bottom substrate were an $Al_2O_3$ anti-reflection layer on a double Zr-O cermets layer on an Al metal infrared reflection layer. Optical properties of optimized Zr-O cermets solar selective coating had an absorptance of ${\alpha}\;=\;0.95$ and thermal omittance of ${\epsilon}\;=\;0.10\;(100^{\circ}C)$. The absorbing layer of Zr-O cermets coatings on glass and silicon substrate was identified as being amorphous by using XRD. AFM showed that ZF-O cermets layers were very smooth and their surface roughness were approximately $0.1{\sim}0.2 nm$. The chemical analysis of the cermets coatings were determined by using XPS. Chemical shift of photoelectron binding energy was occurred due to the change of Zr-O cermets coating structure deposited with increase in oxygen flow rate. The result of thermal stability test showed that the Zr-O cermets solar selective coating was stable for use at temperature below $350^{\circ}C$.

• 대한화학회지
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• 제39권1호
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• pp.57-65
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• 1995

$1.0{\times}10^{-2}M\; KNO_3$ 수용액에서 methylene blue(MB)의 전기화학적 환원을 직류 및 펄스차이 폴라로그래피, 순환 전압-전류법, 조절 전위 전기량법으로 조사하였다. MB의 전극환원은 처음 가역파(-0.18 volts vs. Ag/AgCl)에서 2전자 이동의 CE 반응기구로 진행되었다. Methylene blue는 정지된 수은전극에 강하게 흡착되었으며, 조절 전위 전기분해로 환원된 생성물은 공기중에서 빠르게 자동산화되어 본래의 MB로 돌아왔다. pH 변화에 따른 순환 전압-전류 그림과 폴라로그램의 해석을 근거로 하여 CE 반응기구를 제시하였다.

• 대한정형도수물리치료학회지
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• 제23권2호
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• pp.1-8
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• 2017

Background: The purpose of this study was to investigate the effects on static balance and disability in chronic low back pain with lumbar rotation extension subgroup of trascranial direct current stimulation (tDCS) and lumbar motor control exercise (MCE). Methods: In 40 male low back pain with lumbar rotation extension subgroup subjects were recruited for the study. Subjects were randomly allocated into two groups. Experimental groups received tDCS and MCE, Control groups received sham-tDCS and MEC. Before and after intervention, measured in surface area, whole path length and Roland-Morris low back pain questionnaire (RMQ). Results: Showed a significant static balance and disability from the experimental groups compared to the control group. Showed a no significant RMQ score from experimental groups compared to the control group. Conclusions: tDCS and lumbar MCE showed the increased static balance in chronic low back pain with lumbar rotation extension subgroup.