• Proceedings of the Korean Vacuum Society Conference
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• 1997.07a
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• pp.134-134
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• 1997

• Proceedings of the Korean Vacuum Society Conference
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• 2002.06a
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• pp.29-29
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• 2002

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.48-56
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• 1999

In this paper, we have investigated experimentally the effects of initial oxygen concentration on oxygen pileup phenomenon and the diffusion of implanted impurities. 1.2 MeV $^{11}B^{+}$ and 2.2 MeV $^{31}P^{+}$ ions were implanted into p-type (100) Si wafers with a dose of 1${\times}10^{15}$ / $\textrm{cm}^2$. Secondary ion mass spectrometry(SIMS) measurements were carried out to obtain depth distribution profiles for implanted impurities and oxygen atoms after two-step annealing of $700^{\circ}C$(20 hours)+$1000^{\circ}C$(10 hours). Residual secondary defect distribution and annealing behabiour were also studied by cross-sectional transmission electron microscopy(TEM) observations. Oxygen pileup nearly $R_p$(projected range) were observed by SIMS measurements and considerable amount of residual secondary defect layer were observed by TEM observations. It can be seen that oxygen atoms are trapped at the secondary defects by the experimental results. Enhanced diffusions of boron and phosphorus to the bulk direction were observed with the increasing of initial oxygen concentration.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.37-45
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• 1998

In this paper, we report the first three-dimensional simulation result of the transient enhanced diffusion(TED) of dopants in the ion-implanted silicon by employing our 3D semiconductor process simulator, INPROS system. In order to simulate three-dimensional TED redistribution of dopants in silicon, the dopant distributions after the ion implantation was calculated by Monte Carlo(MC) method, followed by finite element(FE) numerical solver for thermal annealing. Excellent agreement between the simulated 3D profile and the SIMS data has been obtained for ion-implanted arsenic and phosphorus after annealing the boron marker layer at 75$0^{\circ}C$ for 2 hours. Our three-dimensional TED simulation could successfully explain the reverse short channel effect(RSCE) by taking the 3D point defect distribution into account. A coupled TED simulation and device simulation allows reverse short channel effect on threshold to be accurately predicted.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.224-230
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• 2001

The characteristics of $NO/N_2O$ annealed reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of Non-Volatile Semiconductor Memory (NVSM) were investigated by Dynamic Secondary Ion Mass Spectrometry (D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), and Auger Electron Spectroscopy (AES). The specimen was annealed by $NO/N_2O$ after initial oxide process and then rcoxidized for nitrogen redistribution in nitrided oxide. Out-diffusion of incorporated nitrogen during the wet oxidation in reoxidation process took place more strongly than that of the dry oxidation. It seems to indicate that hydrogen plays a role in breaking the Si N bonds. As reoxidation proceeds, incorporated nitrogen of $NO/N_2O$ annealed nitrided oxide is obsen-ed to diffuse toward the surface and substrate at the same time. ToF-SIMS results show that SiON species are detected at the initialoxide interface, and Si,NO species near the new $Si_2NO$ interface that formed after reoxidation. These SiON and $Si_2NO$ species most likely to relate to the origin of the state of memory charge traps in reoxidized nitrided oxide, because nitrogen dangling bonds of SiON and silicon dangling bonds of $Si_2NO$ are contained defects associated with memory effect.

• Journal of the Korean Society for Nondestructive Testing
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• v.24 no.4
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• pp.390-395
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• 2004

The iSTMS is a web-based integrated information system supporting Pre-Service and In-Service Inspection(PSI/ISI) processes for the nuclear power plants of KHNP(Korea Hydro & Nuclear Power Co. Ltd.). The system provides a full spectrum coverage of the inspection processes from the planning stage to the final report of examination in accordance with applicable codes, standards, and regulatory requirements. The major functions of the system includes the inspection planning, examination, reporting, project control and status reporting, resource management as well as objects search and navigation. The system also provides two dimensional or three dimensional visualization interface to identify the location and geometry of components and weld areas subject to examination in collaboration with database applications. The iSIMS is implemented with commercial software packages such as database management system, 2-D and 3-D visualization tool, etc., which provide open, updated and verified foundations. This paper describes the key functions and the technologies for the implementation of the iSIMS.

• Korean Journal of Materials Research
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• v.2 no.4
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• pp.306-310
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• 1992

Effects of hafnium, boron and zirconium on the ductility of Ni$_3$(Al, Fe) intermetallic compounds were studied using tensile test and SIMS analysis. Ni$_3$(Al, Fe) alloy with 0.1 at.% Hf, 0.05 at.% B and 0.1 at.% Zr additions showed maximum elongations of about 30% at 300K, 10% at 300K and 14% at 473K, respectively. The fracture mode of the alloy without the additive was the mixture of intergranular and transgranular fractures, but the addition of Hf, Zr or B changed the fracture mode to transgranular only. SIMS analysis showed that the beneficial effects of Hf, Zr or B segregation on the grain boundary strength are consistent with the grain boundary cohesion theory.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.946-949
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• 1999

In this research we have developed a reliable, effective and feasible HEI(High-Energy Ion Implantation) process 3D-simulation tool, and then by using it we can predict and analyze the effect of HEI process on characteristics of the standard CMOS device. high-energy ion implantation above 200 keV is inevitable process to form retrograde well and buried layer to prevent leakage current, to conduct field implant for field isolation, and to perform after-gate implantation. The feasible analysis tool is a product of the HEI process modeling verified by comparison of the SIMS experiments with the simulation results. Especially, in this paper, we present the predicting capability of HEI-induced impurity and damage profiles compared with the published SIMS data in order to acquire the reliability of our results ranging from few keV to several MeV for phosphorus and boron implantation.

• Proceedings of the Korean Vacuum Society Conference
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• 1995.06a
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• pp.127-127
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• 1995

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.183-183
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• 2003