• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.111-114
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• 1998

Lithium Niobate {{{{ { LiNbO}_{ 3} }}}} single crystals grown by Czichralski method at the congruent composition, have ferroelectric microdomains. These microdomins were investigated by chemical etching with hydrofluoric acid (HF) AND NITRIC ACID ({{{{ { HNO}_{3 } }}}}), and by us ing optical microscopy, scanning electron microscopy and atomic force microscopy

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.505-507
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• 1996

• Proceedings of the Optical Society of Korea Conference
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• 1999.08a
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• pp.220-221
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• 1999

Single crystals of Yttrium Calcium Oxyborate (YCOB) doped with different concentrations of Er3+ and Yb3+ ions were growth by Czochralski method. High qualities of crystals in morphology and transparency were obtained . Analysis on crystal structure and lattice parameters were performed by X-ray diffraction method. It was found that congruent melting composition is YCA4.2O1.2(BO3)3. Absorption and fluorescence properties of grown crystals were also reported.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.253-269
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• 1999

The development of telecommunication and information technology requires to develop new piezoelectric materials with small size, low impedance, wide pass band width and high thermal stability of frequency. Langasite (La3Ga5SiO14) single crystal has been researched substitute of quartz and LiNbO3 for the applications of SAW filter, BAW filter and resonator. Its single crystal growth has been carried out by Czochralski Method. So, in order to get single crystal with higher quality, in this study, lnagasite (La3Ga5SiO14) single crystal was grown by using Floating Zone (FZ) method and characterized. For the growth of langasite single crystals, the langasite powder was synthesized at 135$0^{\circ}C$ for 5hrs and the feed rod was sintered at 135$0^{\circ}C$ for 5hrs. The growing rate was 1.5mm/h and the rotation speed was 15 rpm for an upper rotation and 13 rpm for a lower rotation. In order to prevent the evaporation of gallium oxide, Ar and O2 gas mixture was flowed. The growth direction was analyzed by Laue back-scattered analysis. The composition of grown crystal was analyzed suing XRD and WDS. The electrical properties of grown crystal at various frequencies and temperature were discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.5
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• pp.356-361
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• 2000

The radial position of OiSF-ring has been meaningful data in industry. Thus it's position was calculated by application of (V/G)/sub crit/ = 0.138 ㎟/minK and point defect dynamics for industrial scale grower with various pull rates. After the calculation, compared with experimental result. OiSF-ring diameters expected with calculation were good agreement with experimental results. In order to show validity of the predicted temperature distribution using STHAMAS which is one of the global simulator for Cz crystal growing, temperature was measured along the axis of crystal using thermocouples, and compared with the calculated temperature. We found the effective thermal conductivity K/sub m/ (r) which gives in accordance with the temperature distribution at the axis of crystal and crystal/melt interface shape between experimental and computational results. Therefore, effective thermal conductivity K/sub m/ (r) was applied instead of solving melt convection problem.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.5
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• pp.197-201
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• 2010

$ZnWO_4$ nanocrystallines were prepared from polymeric complex method using microwave irradiation. The average nanocrystalline sizes were 18~25 nm showing an ordinary tendency to increase with the temperatures from 400 to $600^{\circ}C$. Bulk type single crystals of $ZnWO_4$ were grown successfully in the [100], [010] and [001] directions using the Czochralski method. The effect of the growth parameters, such as the rotation speed, pulling rate and diameter of the grown crystals, were examined. The hardness, thermal expansion coefficients and dielectric constants of the crystals were evaluated.

• Korean Journal of Crystallography
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• v.3 no.2
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• pp.111-119
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• 1992

Alexandrite crystals were grown by the Czochralski method. Relationships between or ystal quality and crystal growth factors such as pulling rate, rotation rate, purity of BeO po wders and evaporation loss compensation of BeO and Cr3+/Al3+substitution ratio were investigated. As a result, 1) high purity (more than 99.99p,) of BeO, as a raw material, is requisite condition for single crystal growth, 2) evaporation loss comp ensation is also requisite for high quality crystal growth. This compensation depends on pulling rate and Cr3+/Al3+ ratio. And 3) optimum pulling and rotation rate for alexandrite growth were 0.5∼1.0mm/hr and 20∼25rpm, respectively. Ale xandrite crystals were grown to (001) direction. Various types of defects were detected by the polarizing microscope and we discussed how to remove these defects. And room tempo rature absorption and fluorescence spectra were measured.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.5
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• pp.179-184
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• 2018

To lessen oxygen concentrations in a wafer through modifying the length of graphite heaters, we investigated the influence of relative distance from heater to quartz crucible on temperature profile of hot-zone in Czochralski silicon-crystal growth by simulation. In particular, ATC temperature and power profiles as a function of different ingot body positions were investigated for five different heater designs; (a) typical side heater (SH), (b) short side heater-up (SSH-up), (c) short side heater-low (SSH-low), (d) bottom heater without side heater (Only-BH), and (e) side heater with bottom heater (SH + BH). It was confirmed that lower short side heater exhibited the highest ATC temperature, which was attributed to the longest distance from triple point to heater center. In addition, for the viewpoint of energy efficiency, it was observed that the typical side heater showed the lowest power because it heated more area of quartz crucible than that of others. This result provides the possibility to predict the feed-forward delta temperature profile as a function of various heater designs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.246-251
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• 2014

Recent studies have shown methods of improving solar cell efficiency. Especially on single crystalline silicon wafer which is high-efficiency solar cell material that has been widely studied. Interstitial oxygen (Oi) is the main impurity in the Czochralski (Cz) growing method, and excess of this can form precipitates during cell fabrication. We have demonstrated the effect of Oi impurity and oxygen precipitation concentration of the wafer on Cz-silicon solar cell efficiency. The result showed a decrease in cell efficiency as Oi and oxygen precipitation increase. Moreover, we have found that the critical point of [Oi] to bring higher cell efficiency is at 14.5 ppma in non-existent Bulk Micro Defect (BMD).

• Journal of Radiation Protection and Research
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• v.34 no.2
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• pp.83-86
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• 2009

The single crystal scintillator of bismuth germinate ($Bi_4Ge_3O_{12}$:BGO) was successfully grown by the conventional Czochraski technique. The characteristics of the grown BGO were evaluated and presented on the excitation, emission responses and energy spectra of the $\gamma$-rays from $^{241}Am$, $^{133}Ba$, $^{57}Co$, $^{22}Na$, $^{137}Cs$ and $^{54}Mn$ radio-isotopes. The energy resolution of grown BGO, $\Delta$E/E, was estimated to be 12.1% at 662 keV of $\gamma$-ray for $^{137}Cs$ nuclide. Compared to the commercial BGO crystal, we confirmed that the grown BGO has a good performance and is comparable to reference one.