• Title/Summary/Keyword: Current transient

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Simulation of Capacitively Graded Bushing for Very Fast Transients Generated in a GIS during Switching Operations

  • Rao, M.Mohana;Rao, T. Prasad;Ram, S.S. Tulasi;Singh, B.P.
    • Journal of Electrical Engineering and Technology
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    • v.3 no.1
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    • pp.36-42
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    • 2008
  • In a gas insulated substation (GIS), Very Fast Transient Over-voltages (VFTOs) are generated due to switching operations and ground faults. These fast transients are associated with high frequency components of the order of a few hundreds of MHz. These transients may cause internal faults i.e., layer-to-layer faults or minor faults in a capacitively graded bushing, which is one of the important pieces of terminal equipment for GIS. In the present study, the PSPICE model has been developed to calculate the voltage distribution across the layers of 420kV graded bushing for high frequency pulses of rise time 1 to 50ns, which simulate the VFTO. For this simulation, an equivalent electrical network of bushing with different equivalent layers has been considered. The effect of different equivalent layers modeling circuits on the non-uniform voltage factor has been analysed. The influence of copper strip inductance on voltage distribution across layers has also been analysed for various rise times of high frequency transients. Finally, the leakage current of the bushing is calculated for evaluating the bushing condition under these transients.

A Speed Sensorless Induction Motor Control System using Direct Torque Control for Torque Ripple Reduction (직접 토크제어의 토크맥동 저감을 위한 속도검출기 없는 유도전동기 제어 시스템)

  • Kim, Nam-Hun;Kim, Min-Ho;Kim, Min-Huei;Kim, Dong-Hee;Hwang, Don-Ha
    • Proceedings of the KIEE Conference
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    • 2001.07b
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    • pp.986-988
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    • 2001
  • This paper presents a digitally speed sensorless control system for induction motor with direct torque control (DTC). Some drawbacks of the classical DTC are the relatively large torque ripple in a low speed range and notable current pulsation during steady state. They are reflected speed response and increased acoustical noise. In this paper, the DTC quick response are preserved at transient state, while better qualify steady state performance is produced by space vector modulation (SVM). The system are closed loop stator flux and torque observer for wide speed range that inputs are currents and voltages sensing of motor terminal, model reference adaptive control (MRAC) with rotor flux linkages for the speed fuming signal at low speed range, two hysteresis controllers and optimal switching look-up table. Simulation results of the suggest system for the 2.2 [kW] general purposed induction motor are presented and discussed.

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Simulation of Power IGBT and Transient Analysis (전력용 IGBT의 시뮬레이션과 과도 해석)

  • 서영수
    • Journal of the Korea Society for Simulation
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    • v.4 no.2
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    • pp.41-60
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    • 1995
  • The IGBT(Insulated Gate Bipolar Transistor) is a power semiconductor device that has gained acceptance among circuit design engineers for motor drive and power converter applications. IGBT devices(International Rectifier, Proposed proposed model etc) have the best features of both power MOSFETs and power bipolar transistors, i.e., efficient voltage gate drive requirememts and high current density capability. When designing circuit and systems that utilize IGBTs or other power semiconductor devices, circuit simulations are needed to examine how the devices affect the behavior of the circuit. The interaction of the IGBT with the load circuit can be described using the device model and the state equation of the load circuit. The voltage rise rate at turn-off for inductive loads varies significantly for IGBTs with different base life times, and this rate of rise is important in determing the voltage overshoot for a given series resistor-inductor load circuit. Excessive voltage overshoot is potentially destructive, so a snubber protection circuit may be required. The protection circuit requirements are unique for the IGBT and can be examined using the model. The IGBT model in this paper is verified by comparing the results of the model with experimented results for various circuit operating conditions. The model performs well and describes experimented results accurately for the range of static and dynamic condition in which the device is intended to be operated.

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Fault tolerant control scheme for a converter in a photovoltaic system (태양광 발전시스템의 컨버터 고장에 따른 보상운전기법)

  • Park, Tae-Sik;Hur, Yong-Ho;Lee, Kwang-Woon;Moon, Chae-Joo;Kwak, No-Hong
    • Journal of the Korean Solar Energy Society
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    • v.36 no.4
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    • pp.31-40
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    • 2016
  • The demands for photovoltaic systems on a large scale have grown dramatically and require new technologies to get the high efficiency and reliable operations of power conversion systems. These needs can be realized by the cost-effective and high performance digital revolutions and faster semiconductor switching devices. However, the new power systems have been more sophisticated and their reliability becomes critical issues. In this paper, a new fault-tolerance power conversion scheme for the photovoltaic systems is proposed. The proposed fault-tolerant scheme is able to supply energy from solar panels to loads intermittently in spite of a front boost converter open failure, and its voltage and current controllers are designed to improve the transient performance by using an average model design scheme. The proposed approach is verified both by simulations. The results will enable more timely and wide usage of alternative/renewable energy systems resulting in increased energy security.

Community Structure and Species Diversity of Fish across Spatial Scales in the Lower Reach of Seomjin River (섬진강 하류역에 서식하는 어류의 군집구조 및 공간 규모에서 종 다양성)

  • Huh, Man-Kyu;Seo, Jeoung-Yoon;Joo, Woo-Hong
    • Journal of Environmental Science International
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    • v.21 no.11
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    • pp.1361-1369
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    • 2012
  • A biological assessments of fish community structure were carried out in the lower reach of Seomjin River from May 2009 to November 2010. The collected fish from the six surveyed sites were 63 species belonging to 24 families, and 10 orders. Although species was different depending on sites, the numbers of individuals were not shown significance on sites. Locational dominant species were different. For example, the dominant species on May were Zacco platypus at W-1, Zacco temminckii at W-2, Acanthogobius flavimanus at W-3 and W-4, and Leiognathus nuchalis at W-5 and W-6. There is no seasonal differences in species. Species diversity was the best up to 2.64 on May at W-1 from 1.33 on November at W-6. As a result of an analysis about environmental factors for the numbers of fish species and individuals in each surveyed sites, the most effective groups were DO, BOD, and COD. The proportional difference was high on May than November between transient and asymptotic projections for population size and population growth rate for simulations starting at the current or theoretical stage distribution.

Effect of applied magnetic fields on oxygen transport in magnetic Czochralski growth of silicon (Czochralski 방법에 의한 실리콘 단결정 성장에서 자장에 의한 산소의 전달 현상 제어)

  • Chang Nyung Kim
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.4 no.3
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    • pp.210-222
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    • 1994
  • The characteristics of flows, temperatures, and concentrations of oxygen are numerically studies in the Czochralski furnace with a uniform axial magnetic field. Important governing factors to the flow fields include buoyancy, thermocapillarity, centrifugal force, magnetic force, diffusion and segregation coefficients of the oxygen, evaporation coefficient in the form of SiO, and ablation rate of crucible wall. With an assumption that the flow fields have reached the steady state, which means that two velocity components in the meridional plane and circumferential velocity, temperatures, electric current intensity become non-transient, then unsteady concentration field of oxygen has been analyzed with an initially uniform oxygen concentration. Oxygen transports due to convection and diffusion in the Czochralski flow field and oxygen flux through the growing crystal surface has been investigated.

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Droop Method for High-Capacity Parallel Inverters in Islanded Mode Using Virtual Inductor (독립운전 모드에서 가상 인덕터를 활용한 대용량 인버터 병렬운전을 위한 드룹제어)

  • Jung, Kyo-Sun;Lim, Kyung-Bae;Kim, Dong-Hwan;Choi, Jaeho
    • The Transactions of the Korean Institute of Power Electronics
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    • v.20 no.1
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    • pp.81-90
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    • 2015
  • This paper investigates the droop control-based real and reactive power load sharing with a virtual inductor when the line impedance between inverter and Point of Common Coupling (PCC) is partly and unequally resistive in high-capacity systems. In this paper, the virtual inductor method is applied to parallel inverter systems with resistive and inductive line impedance. Reactive power sharing error has been improved by applying droop control after considering each line impedance voltage drop. However, in high capacity parallel systems with large output current, the reference output voltage, which is the output of droop controller, becomes lower than the rated value because of the high voltage drop from virtual inductance. Hence, line impedance voltage drop has been added to the droop equation so that parallel inverters operate within the range of rated output voltage. Additionally, the virtual inductor value has been selected via small signal modeling to analyze stability in transient conditions. Finally, the proposed droop method has been verified by MATLAB and PSIM simulation.

Electrical Characterization of Nano SOI Wafer by Pseudo MOSFET (Pseudo MOSFET을 이용한 Nano SOI 웨이퍼의 전기적 특성분석)

  • Bae, Young-Ho;Kim, Byoung-Gil;Kwon, Kyung-Wook
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.12
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    • pp.1075-1079
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    • 2005
  • The Pseudo MOSFET measurements technique has been used for the electrical characterization of the nano SOI wafer. Silicon islands for the Pseudo MOSFET measurements were fabricated by selective etching of surface silicon film with dry or wet etching to examine the effects of the etching process on the device properties. The characteristics of the Pseudo MOSFET were not changed greatly in the case of thick SOI film which was 205 nm. However the characteristics of the device were dependent on etching process in the case of less than 100 nm thick SOI film. The sub 100 nm SOI was obtained by thinning the silicon film of standard thick SOI wafer. The thickness of SOI film was varied from 88 nm to 44 nm by chemical etching. The etching process effects on the properties of pseudo MOSFET characteristics, such as mobility, turn-on voltage, and drain current transient. The etching Process dependency is greater in the thinner SOI wafer.

Effectiveness Evaluation According to Change of IJ Joint Box Location and Grounding System in Underground Transmission System (지중송전계통에서 절연접속함 위치 및 접지방식 변경의 효용성 평가)

  • Ko, Kwang-Man;Lee, Jong-Beom
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.64 no.2
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    • pp.247-253
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    • 2015
  • Dielectric breakdown accidents have been mainly occurred in the vicinity of service entrance section in underground power transmission systems. One cause among them is due to the excessive component value of sheath located around service entrance of cable. In this paper, as one of the alternative to prevent these accidents, the change of cross bond grounding system and the location change of IJ(Insulation Joint) are suggested. Also, to evaluate effectiveness of this changing system, circulating current and induced voltage of sheath were analyzed in steady and transient state. By comparison of the analytical results for the several possible changing systems, a grounding system and location of IJ which has the smallest sheath component values is proposed. In this paper, analysis to evaluate the proposed system is carried out by EMTP/ATPDraw. It can be used as a valuable operational material to prevent accident of the service entrance section in underground power transmission system.

The effects of la content on the electrical and optical properties of (Pb, La)TiO$_{3}$ thin films (La 농도가 PLT 박막의 전기적 및 광학적 특성에 미치는 효과)

  • 강성준;류성선;윤영섭
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.2
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    • pp.87-95
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    • 1996
  • We have studied the effects of La concentration on the optical and electrical properties of lead lanthanum titanate (PLT) thin films by using sol-gel method. Both the optical and electrical properties are greatly affected by the La concentration. The refreactiv eindices of the films varied from 2.23 to 1.93 with varying La concentration in the range from 15 to 33 mol%. The dielectric constants of the films vary form 340 to 870 with varying La concentration in the range form 15 to 33 mol%. Hysteresis loop becomes slimmer with the increase of La concentration form 15 to 28mol% and little fatter again with the increase of La concentration form 28 to 33 mol%. Among the films investigated in this research, PLT(28) thin film shows the best dielectric properties for the application to the dielectrics of ULSI DRAM's. At the frequency of 100Hz, the dielectric constant and the loss tangent of PLT(28) thin films are 940 and 0.08 respectively. Its leakage current density at 1.5${\times}10^{5}$V/cm is 1${\times}10^{-6}A/cm^{2}$. The comparision between the simulated and the experimental curves for the switching transient characteristics shows that PLT (28) thin films behaves like normal dielectrics.

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