• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.1
• /
• pp.42-46
• /
• 2003

Arresters are deteriorated by overvoltages or impulse currents, and the resistive leakage current of arresters increases as the deterioration of the arrester progresses, showing an increase in the 3$^{rd}$ harmonic component of the leakage current. In this reason, arrester diagnostic techniques based on the 3$^{rd}$ harmonic leakage current as a reference parameter of deterioration are widely used. The technique, however, includes an error due to the harmonics of power system voltage. Therefore, the influence of the harmonics on arrester diagnostics should be considered. In this paper, we designed a PSpice ZnO arrester model to simulate the influence of the voltage harmonics described above. A pure sinusoidal voltage and its the 3r harmonic voltage were applied to the model, and the leakage current components were analyzed. From the simulation results, it is confirmed that the peak value of resistive leakage current depends not only on the phase of the 3$^{rd}$ harmonic voltage but also on the magnitude of it. Consequently, the errors caused 1)y the harmonic voltage could be minimized by correcting the magnitude of leakage current upon analyzing the harmonics.cs.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.58 no.4
• /
• pp.490-494
• /
• 2009

In this paper, how the temperature of a varistor changes when $10/350{\mu}s$ surge currents and/or DC leakage currents are applied on it, respectively, are investigated. The temperature change in varistor is related with injection energy and leakage current. which is the integration of power in time. By the surge current test, we found that the temperature jump is proportional to the level of surge current with slant 52.535 and has no relation with the ambient temperature. And by the DC leakage current test, the difference in temperatures between varistor and ambient is proportional to the magnitude of leakage current. The slope of measured line(the temperature difference vs. the leakage current) shows alteration around $100{\mu}A$. The varistors can not be used more than $100{\mu}A$ region any more. From the above experimental results, we can conclude that data of the surge current test and also those of DC leakage current test can predict the performance of varistors of which the surge protective devices are made.

• Proceedings of the KSR Conference
• /
• 2004.06a
• /
• pp.1422-1424
• /
• 2004

Various deterioration diagnostic techniques and devices are suggested, and most of which measure leakage current components as an indicator of arrester ageing. However, the techniques based on the magnitude of leakage current measure simply RMS or peak value of leakage current components and do not provide detailed information needed in the diagnosis. In this study, we found that the phase vs. wave height of total leakage current is changed or a new wave height is produced with arrester ageing. To complete the new technique, we designed an arrester diagnostic device which is composed of a current detection circuit, an optical transmission circuit, and an analysis program. After measurement of the total leakage current, magnitudes, phase vs. wave height, and harmonics of the leakage current components are analyzed by the microprocessor based device. From the experimental results, we confirmed that the device can measure most parameters needed for the arrester diagnostics and analyze an initial deterioration state.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.2
• /
• pp.112-115
• /
• 2011

To stabilize the electric characteristic of Silicon Thin Film Transistor, reducing the current leakage is most important issue. To reduce the current leakage, many ideas were suggested. But the increase of mask layer also increased the cost. On this research Bird's Beak process was use to present element. Using Silvaco simulator, it was proven that it was able to reduce current leakage without mask layer. As a result, it was possible to suggest the structure that can reduce the current leakage to 1.39nA without having mask layer increase. Also, I was able to lead the result that electric characteristic (on/off current ratio) was improved compare from conventional structure.

• Journal of Power Electronics
• /
• v.16 no.1
• /
• pp.66-73
• /
• 2016

The quantity of alternating current (AC) leakage and the value of distortion factor in capacitor currents are discussed with regard to a new power component called variable capacitance device (VCD). This component has terminals for controlling its capacitance. Nonlinear dielectric characteristics are utilized in this device to vary the capacitance. When VCD operates in an AC circuit, the AC leakage from this device through direct current (DC) control voltage source increases according to the conditions of DC control voltage and so on. To solve this problem, we propose techniques for suppressing AC leakage. Although VCD has strong nonlinear characteristics, the current through the capacitor is not distorted significantly. The relations between AC leakage and the distortion in current waveforms are investigated. An application example for an AC power regulator is also introduced to evaluate the distortion in waveforms.

• Proceedings of the KIEE Conference
• /
• 1993.07b
• /
• pp.1250-1252
• /
• 1993

Enhancement mode n-channel TFT leakage current(off current : $V_G<0$) that is little agreement on the conduction mechanism is major disadvantage of poly-silicon TFT in practical use, characteristic analysis and model ing. In this paper, new modeling of leakage current is proposed. The activation energy of leakage current, which is dependent on gate voltage, and leakage current dependent on poly silicon thickness are plausibly explained with this model. This model indicate that the reduction of leakage current is attributable to a decrease of maximum laterial electric field strength in the drain depletion region and to the density of trap.

• Journal of the Korean Society of Safety
• /
• v.27 no.6
• /
• pp.48-53
• /
• 2012

This paper is purposed to develop portable electric instrument to select NI-9223(National instrument comp.) and clamp meter(HIOKI comp.), which can be used in developing electric instrument, to detect leakage current(ZCT) and current(CT) signals. In this paper, The electric instrument that can interface with current and leakage current instrument(HIOKI 9283), is developed by NI-9223 of NI comp.. HIOKI clamp meter can measure current signals certainly by high-sensitivity of 10 ${\mu}A$ resolution(leakage current : at 10 mA range) and current 1~200A range. The NI-9223 use four 16-bit analog-to-digital converters(ADCs) for true simultaneous sampling at up to 1 MS/s per channel. NI-9223 can synchronize all analog input modules installed in the same chassis to share the same start clock and/or sample clocks. The monitoring program is developed by SignalExpress of LabVIEW. The monitoring program are developed to analyze at simultaneous sampling on electrical signals such as leakage current(ZCT) and current(CT). The developed system verification tests were conducted, and portable electric instrument can be used in place which requires analysis of the actual electrical signal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04b
• /
• pp.89-90
• /
• 2009

Three kind of surface-leakage-test-patterns were fabricated and measured in order to investigate the surface leakage current of AlGaN/GaN heterostructures through etched GaN buffer surface and mesa wall. The pattern which contain the mesa wall has the largest surface leakage current among them. The leakage current due to the mesa wall is predominant source of the leakage current of AlGaN/GaN devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.05c
• /
• pp.186-188
• /
• 2001

In this study, the correlation between leakage currents and temperature rise was investigated for the more accurate diagnosis of bad insulator by use of the infrared camera. For the purpose, leakage currents and thermal images were measured for the artificially aged insulators using salt fog. From the results, it is concluded as follows ; in case of artificially aged insulators, the leakage. current was decreased with the duration of voltage application and was largely affected by humidity, which seems due to ionic conduction. Also, the correlation between temperature rise and leakage current was appeared to be quite linear, although it showed below linearity at large leakage current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.08a
• /
• pp.142-145
• /
• 2002

This paper describes an influence of system voltage harmonics on arrester deterioration diagnostic techniques based on leakage current measurement because the resistive current is composed of two components caused by nonlinear characteristics of arrester and by system voltage harmonics. Resistive leakage currents of arresters, which can be evaluated by the third harmonic component of total leakage currents, increase with its deterioration progress. In this paper, we developed a PSpice model for ZnO arrester to simulate the harmonics' effect described above. In simulation, pure sinusoidal voltage and the $3^{rd}$ harmonic voltage are applied to the model, and the leakage current changes are compared. The simulation results showed that the magnitudes of resistive leakage current depend not only on the phase of system voltage harmonics but also on the magnitude of it.