• Applied Chemistry for Engineering
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• v.8 no.3
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• pp.489-501
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• 1997

Electropolymerization of 2-vinylnaphthalene (2-VN) and methylmethacrylate (MMA) with high radiation resistance property was conducted on the surfaces of carbon fibers by using a nonaqueous solution of comonomers dissolved in N,N-dimethylformamide containing sodium nitrate as a supporting electrolyte. The fabrication of carbon fiber/2-VN/MMA prepreg was performed electrochemically in 1:1 comonomer solution. Electropolymerization was conduced by changing the current density, initial comonomer concentration, and reaction time. The weight gain on the surface of the carbon fibers was measured by thermogravimetric analyser (TGA). The highest weight gain of 50 wt% was obtained at 600mA/g~800mA/g current density range, but the weight gain was rapidly decreased above 800mA/g current density. The weight gain was increased with the concentration of comonomer, while the concentration of electrolyte had almost no effect on the weight gain. At 300mA/g current density, weight gain rate was increased abruptly to the initial 30 minutes of reaction time. After that the rate was decreased due to the generation of gas bubbles. In order to check the effect of coated polymers on the radiation resistance, morphology changes before and after $\gamma$-ray irradiation was investigated for the composites.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.286-291
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• 2003

Asymmetric multiple quantum well ridge waveguide laser diodes (AMQW RWG LDs) with a wide and flat gain spectrum were designed and fabricated. The operating parameters and gain spectra were measured and analyzed for uncoated and anti-reflection (AR) coated LDs. For AR coated 500 mm-long RWG LOs, the extremely flat gain spectrum over a spectral range of 90 nm was obtained at the current 75 ㎃.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.25 no.6
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• pp.853-856
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• 2021

In this paper, a low noise amplifier having high gain and low noise by using input and inter stage matching circuits has been designed. A current-reused two-stage common-source topology is adopted, which can obtain high gain and low power consumption. Deterioration of noise characteristics according to the source inductive degeneration matching is compensated by adopting additional matching circuits. Moreover trade-offs among noise, gain, linearity, impedance matching, and power dissipation have been considered. In this design, 0.18-mm CMOS process is employed for the simulation. The simulated results show that the designed low noise amplifier can provide high power gain and low noise characteristics.

• Journal of the Korean institute of surface engineering
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• v.30 no.1
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• pp.44-56
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• 1997

Influence of electrochemical etching conditions on capacitance gain of aluminium electrolytic on capacitor foil has been investigated by etching cubic textured high purity aluminum foil in dilute hydrochloric acid. Uniformly distributed etch pit tunnels on aluminum surface have been obtained by pretreatment aluminium foil in 10% NaOH solution for 5 minutes followed by electrochemical etching. Electrostatic capacitance of etched aluminium foil anodized to high voltage increased with the increase of current density, total charge, temperature and concentration of electrolyte up to maximum CV-value and then deceased. Election optical observation of the etched foil revealed that the density of etch of etch pits increased with the increase of current density and concentration of electrolyte. this increase of etch pit density enlarged of the increase of capacitance. However, abnormal high current density and high electrolyte concentration induced the local dissolution of the foil surface which resulted the decrease of foil capacitance.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.2
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• pp.7-14
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• 1979

Design considerations of I2L are discussed with particular emphasis on the upward current gain of the npn transistor, 6J Several test structures have been fabricated to measure the DC and AC characteristics of the I2L basic cell and the base current components of the npn transistor. A T flip-flop has also been designed and fabricated using the I2L technology. The upward current gain of 10 the speed -power product of the 2.6pJ/gate and the minimum propagation delay time of 36 nsec have been obtained from the test structure. The maxmum toggle frequency of the T flip -flop has been measured to be 3.5 MHz.

• Journal of IKEEE
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• v.16 no.2
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• pp.116-120
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• 2012

We reported on a high performance InGaAs/InAlAs metamorphic HEMT with 50 nm gate length on a GaAs substrate. The fabricated $50nm{\times}60{\mu}m$ MHEMT showed good DC and RF characteristics. Typical drain current density of 740 mA/mm and extrinsic transconductance(gm) of 1.02 S/mm were obtained with our devices. The current gain cut-off frequency(fT) and maximum oscillation frequency(fmax) obtained for the fabricated MHEMT device were 430 GHz and 406 GHz, respectively.

• Journal of Power Electronics
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• v.17 no.3
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• pp.621-631
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• 2017

A KY converter integrated with a conventional synchronously rectified (SR) boost converter and a coupled inductor is presented in this paper. This improved KY converter has the following advantages: 1) the two converters use common switches; 2) the voltage gain of the KY converter can be improved due to the integration of a boost converter and a coupled inductor; 3) the leakage inductance of the coupled inductor is utilized to achieve zero voltage switching (ZVS); 4) the current stress on the charge pump capacitors and the decreasing rate of the diode current can be limited due to the use of the coupled inductor; and 5) the output current is non-pulsating. Moreover, the active switches are driven by using one half-bridge gate driver. Thus, no isolated driver is needed. Finally, the operating principle and analysis of the proposed converter are given to verify the effectiveness of the proposed converter.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.12
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• pp.82-90
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• 2011

A novel class AB current subtracter(CS) and its application to Norton amplifier(NA) for low-power current-mode signal processing are designed. The CS is composed of a translinear cell, two current mirrors, and two common-emitter(CB) amplifiers. The principle of the current subtraction is that the difference of two input current applied translinear cell get from the current mirror, and then the current amplify through CB amplifier with ${\beta}$ times. The NA is consisted of the CS and wideband voltage buffer. The simulation results show that the CS has current input impedance of $20{\Omega}$, current gain of 50, and current input range of $i_{IN1}$ > $i_{IN2}{\geq}4I_B$. The NA has unit gain frequency of 312 MHz, transresistance of 130 dB, and power dissipation of 4mW at ${\pm}2.5V$ supply voltage.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.675-681
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• 2016

A 41dB gain control range $6^{th}$-order band-pass receiver front-end (RFE) using CMOS switched frequency translated impedance (FTI) is presented in a 40 nm CMOS technology. The RFE consists of a frequency tunable RF band-pass filter (BPF), IQ gm cells, and IQ TIAs. The RF BPF has wide gain control range preserving constant filter Q and pass band flatness due to proposed pre-distortion scheme. Also, the RF filter using CMOS switches in FTI blocks shows low clock leakage to signal nodes, and results in low common mode noise and stable operation. The baseband IQ signals are generated by combining baseband Gm cells which receives 8-phase signal outputs down-converted at last stage of FTIs in the RF BPF. The measured results of the RFE show 36.4 dB gain and 6.3 dB NF at maximum gain mode. The pass-band IIP3 and out-band IIP3@20 MHz offset are -10 dBm and +12.6 dBm at maximum gain mode, and +14 dBm and +20.5 dBm at minimum gain mode, respectively. With a 1.2 V power supply, the current consumption of the overall RFE is 40 mA at 500 MHz carrier frequency.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.1
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• pp.95-103
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• 2008

This paper deals with the problem of autolanding for aircraft under windshear environment for which the landing trajectory is given. It is well known that the landing maneuver in windshear turbulence is very dangerous and hard for the pilot to control because windshear is unpredictable in when and where it happens and its aerodynamic characteristics are complicated. In order to accomplish satisfactory autolanding maneuver in this environment, we propose a gain-scheduled controller. The proposed controller consists of three parts: PID controller, called baseline controller, which is designed to satisfy requirements of stability and performance without considering windshear, gain scheduler based on fuzzy logic, and safety decision logic, which decides if the current autolanding maneuver needs to be aborted or not. The controller is applied to a 6-DOF simulation model of the associated airplane in order to illustrate the effectiveness of the proposed control algorithm. It is noted that a cross wind in the lateral direction is included to the simulation model. From the simulation results it is observed that the proposed gain scheduled controller shows superior performance than the case of controller without gain scheduling even in severe downburst and tailwind region of windshear. In addition, touchdown along centerline of the runway is more precise for the proposed controller than for the controller without gain scheduling in the cross wind and the tailwind.