• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.1
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• pp.22-28
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• 2018

In case of developing a combined system by a number of distributed resources with storage device, a number of application suggests a huge capacity can derive operational flexibility both power supply issues or when unexpected situation imposed. However, it is important to determine a resonable energy capacity because the device have many controversial cost issues in current power system industry. An ESS application which focusing essentially required points can induce appropriate storage capacity that required in economic operation. In this paper, a curtailment supporting algorithm based on storage device is introduced, and applied in the capacity calculation method. The main algorithm pursues handling minor exceeding quantities which can cause mechanical load at blade; This paper tries to include it for configuring hybrid algorithm with pitch control. Several fluctuating conditions are utilized in simulation to reflect critical situation. The analyzing process focuses on the control feasibility with applied capacity and control method.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.6
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• pp.40-44
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• 2014

In this paper, maximum power is the lowering device using the facility's energy use and peak load electricity through analyzing attitude should like to make it reduce its power base rate. Simulator to manage the demand for power, a maximum electric power base power from electronic watt-hour meters by a device's signal, predictive power, the current power by computing the goal of power for less than Maximum peak power and peak shift, so that you can manage, and peak York, which role you want a cut Metal heat treatment result which analyzes the data, demand for electricity company over the years of analyzing the characteristics of each load, and effects and Reducing power consumption device every month identified seven Sequence control to the load system and successful power control is about showing that the defined goals.

• Journal of the Semiconductor & Display Technology
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• v.14 no.2
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• pp.41-45
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• 2015

From 20nm technology node, the finFET has become standard device for ULSI's. However, the finFET process made stacking gate non-volatile memory obsolete. Some reported capacitor-less DRAM structure by utilizing the FBE. We present possible non-volatile memory device structure similar to the dual gate MOSFET. One of the gates is left floating. Since body of the finFET is only 40nm thick, control gate bias can make electron tunneling through the floating gate oxide which sits across the body. For programming, gate is biased to accumulation mode with few volts. Simulation results show that the programming electron current flows at the interface between floating gate oxide and the body. It also shows that the magnitude of the programming current can be easily controlled by the drain voltage. Injected electrons at the floating gate act similar to the body bias which changes the threshold voltage of the device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.428-431
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• 2002

Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultrasmall size. The structure of MIM(Metal-Insulator-Metal) device is Cr-Au/ PBLG/ Al. the number of accumulated layers are 1, 3, 5, 7, 9. The I-V characteristic of the device is measured from 0[V] to 2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because PBLG system have a accumulated layers the maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.6
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• pp.994-1002
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• 2008

In this paper a novel tracking system is described, regarding the influence of shadow between array, aimed at improving the efficiency of PV tracking system. Comparing with a building site versus capacity power, domestic solar powers have a limited siting. Therefore, each array interferes with the shadow of other arrays. The loss by influence of those shadow can be compensated for by means of control algorithm of the tracking device. The paper suggests a method controlling an altitude for length which is received the shadow influence of PV array. By using an azimuth of current solar position and the length between arrays, the controller of tracking device is able to calculate the length between actual arrays and make a comparison of the shadow length at a specific time with the length between arrays. When the shadow length is longer than the length between arrays, the controller of tracking device can adjust a position by compensating error altitude of the length between arrays at an altitude of current solar position. In the paper, we develop the control algorithm able to minimize the loss caused by the influence of shadow on the PV tracking system, and compared this with conventional output system. The controller has been tested in the laboratory with proposed algorithm and shows excellent performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.36-41
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• 2011

Medical X-ray has been brought many changes according to the rapid development of high technology. Especially, for high-voltage generator which is the most important in X-ray generation the traditional way is to use high-voltage electric transformers primarily. However, since it is large and heavy and the ripple rate of DC high-voltage applied to X-ray tube is too big, it has a disadvantage of low X-ray production efficiency. To solve these problems, the studies about high-voltage power supply are now proceeding. At present, the high-voltage generator that generates high-voltage by making high frequency using inverter control circuit consisting of semiconductor device is mainly used. High-voltage generator using inverter has advantages in the diagnosis using X-ray including high performance with short-term use, miniaturization of power supply and ripple reduction. In this study, the X-ray high-voltage device with inverter type using pulse width modulation scheme to the control of tube voltage and tube current was designed and produced. For performance evaluation of produced device, the control signal analysis, irradiation dose change and beam quality depending on the load variation of tube voltage and tube current were evaluated.

• KIISE Transactions on Computing Practices
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• v.23 no.9
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• pp.550-556
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• 2017

Due to the rapid growth and development of Internet of Things (IoT), various devices are now accessible and controllable anytime from anywhere. However, the current IoT system requires a series of complex steps (e.g., launch an application, choose a space and thing, control the thing, etc.) to control the IoT devices; therefore, IoT suffers from a lack of efficient and intuitive methods of interacting with users. To address this problem, we propose a novel IoT control framework based on IoT tags and social messages. The proposed system provides an intuitive and efficient way to control the device based on the device ownership: 1) users can easily control the device by IoT tagging, or 2) users can send an IoT social message to the device owner to request control of the tagged device. Through the development of the prototype system, we show that the proposed system provides an efficient and intuitive way to control devices in the IoT environment.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.1
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• pp.182-187
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• 2015

In the three-phase power system, when any one-phase or two-phases is open-phase, the unbalanced current flows and the single-phase power supplies to three-phase loads. Specially, motor coil and transformer coil receive over-current. As a result, great damage as well as electrical fire can occur to the power system. In order to improve these problems, this paper proposes that an open-phase detection device is designed by a new algorithm using electric potential difference between the resultant voltage of neutral point and ground, and a control circuit topology of open-phase protector is composed of highly efficient semiconductor devices. It improves response speed and reliability. The control algorithm circuit also operates the cut-off of a conventional residual current protective device (RCD) which flows an enforced leakage current to ground wire at open-phase accident. Furthermore, time delay circuit is added to prevent the incapable operation of open-phase protector about instantaneous open-phase not open-phase fault. The time delay circuit improves more reliability.

• Journal of Radiation Industry
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• v.2 no.3
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• pp.141-148
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• 2008

Beta rays emitted from tritium in titanium tritide film were simulated with cathode rays of a scanning electron microscope to investigate the effect of beta rays from tritium on semiconductor devices. The cathode ray currents, which vary with the change of applied energy and beam spot size, were measured with Faraday cup. The current from the semiconductor device irradiated with cathode rays at various conditions was measured. The cathode ray current increased with the increase of spot size to a maximum then decreased when the spot sized increased further. The magnitude of current produced in the semiconductor device is proportional to the magnitude of cathode ray current. The magnitude of cathode ray current at each energy level was matched to the intensity of beta ray to simulate the tritium beta ray spectrum. Then the semiconductor characteristics were analyzed with I-V curves.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2022.10a
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• pp.121-122
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• 2022

In this paper, the device performance with the structure of Nanosheet FET (NSFET) and FinFET is simulated through a three-dimensional device simulator. Current-voltage characteristics of NSFET and FinFET were simulated with respect to channel doping concentrations, and the performance such as threshold voltage and subthreshold swing extracted from the current-voltage characteristics was compared. NSFET flows more drain current and has a higher threshold voltage in current-voltage characteristics depending on channel doping concentration than that of FinFET. The subthreshold voltage swing (SS) of NSFET is steeper than that of FinFET