Acknowledgement
Supported by : 지식경제부
Journal of Radiation Industry (방사선산업학회지)
- Volume 2 Issue 3
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- Pages.141-148
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- 2008
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- 1976-2402(pISSN)
Simulation of Beta Rays from Tritium with Cathode Rays
음극선을 이용한 삼중수소 베타선 모사
- Kim, KwangSin (Nuclear Power Laboratory, Korea Electric Power Research Institute) ;
- Lee, Sook-Kyung (Nuclear Power Laboratory, Korea Electric Power Research Institute) ;
- Son, Soon-Hwan (Nuclear Power Laboratory, Korea Electric Power Research Institute) ;
- Lim, Hoon (Control Technology Research Institute, Samchang Enterprise Company) ;
- Lee, Dong-Hwan (Control Technology Research Institute, Samchang Enterprise Company)
- 김광신 (한국전력공사 전력연구원) ;
- 이숙경 (한국전력공사 전력연구원) ;
- 손순환 (한국전력공사 전력연구원) ;
- 임훈 (삼창기업주식회사 제어기술연구소) ;
- 이동환 (삼창기업주식회사 제어기술연구소)
- Received : 2008.06.25
- Accepted : 2008.08.26
- Published : 2008.09.30
Abstract
Beta rays emitted from tritium in titanium tritide film were simulated with cathode rays of a scanning electron microscope to investigate the effect of beta rays from tritium on semiconductor devices. The cathode ray currents, which vary with the change of applied energy and beam spot size, were measured with Faraday cup. The current from the semiconductor device irradiated with cathode rays at various conditions was measured. The cathode ray current increased with the increase of spot size to a maximum then decreased when the spot sized increased further. The magnitude of current produced in the semiconductor device is proportional to the magnitude of cathode ray current. The magnitude of cathode ray current at each energy level was matched to the intensity of beta ray to simulate the tritium beta ray spectrum. Then the semiconductor characteristics were analyzed with I-V curves.