• Title/Summary/Keyword: Current Injection Probe

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BCI Probe Emulator Using a Microstrip Coupler (마이크로스트립 커플러 구조를 이용한 BCI 프로브 Emulator)

  • Jung, Wonjoo;Kim, SoYoung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.11
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    • pp.1164-1171
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    • 2014
  • Bulk Current Injection(BCI) test is a method of injecting current into Integrated Circuit(IC) using a current injection probe to qualify the standards of Electromagnetic Compatibility(EMC). This paper, we propose a microstrip coupler structure that can replace the BCI current injection probe that is used to inject a RF noise in standard IEC 62132-part 3 documented by International Electrotechnical Commission. Conventional high cost BCI probe has mostly been used in testing automotive ICs that use high supply voltage. We propose a compact microstrip coupler which is suitable for immunity testing of low power ICs. We tested its validity to replace the BCI injection probe from 100 MHz to 1,000 MHz. We compared the power[dBm] that is needed to generate the same level of noise between current injection probe and microstrip coupler by sweeping the frequency. Results show that microstrip coupler can inject the same level of noise into ICs for immunity test with less power.

Electromagnetic Susceptibility Analysis of I/O Buffers Using the Bulk Current Injection Method

  • Kwak, SangKeun;Nah, Wansoo;Kim, SoYoung
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.2
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    • pp.114-126
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    • 2013
  • In this paper, we present a set of methodologies to model the electromagnetic susceptibility (EMS) testing of I/O buffers for mobile system memory based on the bulk current injection (BCI) method. An efficient equivalent circuit model is developed for the current injection probe, line impedance stabilization network (LISN), printed circuit board (PCB), and package. The simulation results show good correlation with the measurements and thus, the work presented here will enable electromagnetic susceptibility analysis at the integrated circuit (IC) design stage.

A Study on the Measurement Technique of the Grounding Mesh Resistance by Field Measurements (현장실측에 의한 메시(Mesh)접지저항 출정기법 연구)

  • 한기붕;김삼수;정세중;이상익
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.426-429
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    • 1999
  • In this paper, we have provided the measurement technique of the grounding mesh resistance by field measurements. The standard of measurement is specified in the IEEE Std 81.2-1991 and JEAC 5001-1988, which is the the fall-of-potential method by test-current injection, but this method is difficult to apply at field, where is small around a electric power substation of domestic. For the convenient measurement method, space of assistant probe and quantity of test-current injection are changed step for step. As the result, ' the proposed measurement technique of grounding mesh resistance is that the space of current and potential probes must be fixed at 150rn from a grounding mesh, the test-current injection has to keep 5A or more.

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Immunity Test for Semiconductor Integrated Circuits Considering Power Transfer Efficiency of the Bulk Current Injection Method

  • Kim, NaHyun;Nah, Wansoo;Kim, SoYoung
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.2
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    • pp.202-211
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    • 2014
  • The bulk current injection (BCI) and direct power injection (DPI) method have been established as the standards for the electromagnetic susceptibility (EMS) test. Because the BCI test uses a probe to inject magnetically coupled electromagnetic (EM) noise, there is a significant difference between the power supplied by the radio frequency (RF) generator and that transferred to the integrated circuit (IC). Thus, the immunity estimated by the forward power cannot show the susceptibility of the IC itself. This paper derives the real injected power at the failure point of the IC using the power transfer efficiency of the BCI method. We propose and mathematically derive the power transfer efficiency based on equivalent circuit models representing the BCI test setup. The BCI test is performed on I/O buffers with and without decoupling capacitors, and their immunities are evaluated based on the traditional forward power and the real injected power proposed in this work. The real injected power shows the actual noise power level that the IC can tolerate. Using the real injected power as an indicator for the EMS test, we show that the on-chip decoupling capacitor enhances the EM noise immunity.

Measurement of Brillouin Gain Spectrum of Optical Fiber Using Direct Optical Frequency Modulation of Laser Diode (레이저 다이오드의 직접 광주파수 변조를 이용한 광섬유의 브릴루앙 이득 스펙트럼 측정)

  • Seo, Min-Sung;Yun, Seung-Chul;Park, Hee-Gap
    • Korean Journal of Optics and Photonics
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    • v.17 no.2
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    • pp.143-148
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    • 2006
  • A new method of measuring the Brillouin gain spectrum of optical fiber is proposed and demonstrated. Unlike existing methods, both the pump light and the counter-propagating probe light are generated from a single laser diode whose optical frequency is directly modulated by injection current modulation. The frequency difference between the pump and the probe is scanned continuously through optical frequency chirp occurring when the injection current is modulated with a square wave. The measured Brillouin gain spectrum of telecom single-mode fiber agrees well with that shown in other literature.

Probe-based Charge Injection Study of DNA Charge Transfer for Applications to Molecular Electro-optic Switching (전극 기반의 전하 주입을 통한 DNA 전하수송 특성 측정)

  • Ryu, Ho-Jeong;Kim, Hee-Young;Kim, Dong-Hyun
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.48 no.3
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    • pp.53-59
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    • 2011
  • Charge transfer through DNA oligonucleotides has been investigated for potential applications of DNA into molecular electrooptic switching devices. Electrons were injected using gold electrode probes where DNA oligomers were adsorbed that are separated in medium. The results show that increased adsorption of DNA reduces the ionization current due to the combined effect of charge transfer through DNA and surface-limited charge transport. The probe-based charge injection was extended to examine the capability of extinguishing fluorescence of Cy3 dye molecules attached to DNA. It is expected that the results may be employed to implementing a novel electrooptic switching device based on DNA molecules.

A Technique for Analyzing LSI Failures Using Wafer-level Emission Analysis System

  • Higuchi, Yasuhisa;Kawaguchi, Yasumasa;Sakazume, Tatsumi
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.1
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    • pp.15-19
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    • 2001
  • Current leakage is the major failure mode of semiconductor device characteristic failures. Conventionally, failures such as short circuit breaks and gate breakdowns have been analyzed and the detected causes have been reflected in the fabrication process. By using a wafer-level emission-leakage failure analysis method (in-line QC), we analyzed leakage mode failure, which is the major failure detected during the probe inspection process for LSIs, typically DRAMs and CMOS logic LSIs. We have thus developed a new technique that copes with the critical structural failures and random failures that directly affect probe yields.

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Development of Hard-wired Instrumentation and Control for the Neutral Beam Test Facility at KAERI

  • Jung Ki-Sok;Yoon Byung-Joo;Yoon Jae-Sung;Seo Min-Seok
    • Journal of Electrical Engineering and Technology
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    • v.1 no.3
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    • pp.359-365
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    • 2006
  • Since the start of the KSTAR (Korea Superconducting Tokamak Advanced Research) project, Instrumentation and Control (I&C) of the Neutral Beam Test Facility (NB-TF) has been striving to answer diverse requests arising from various facets during the project's development and construction phases. Hard-wired electrical circuits have been designed, tested, fabricated, and finally installed to the relevant parts of the system. In relation to the vacuum system I&C, controlling functions for the rotary pumps, a Roots pump, two turbomolecular pumps, and four cryosorption pumps have been constructed. I&C for the ion source operation are the temperature and flow rate signal monitoring, Langmuir probe signal measurements, gradient grid current measurements, and arc detector circuit. For the huge power system to be monitored or safely operated, many temperature measurement functions have also been implemented for the beam line components like the neutralizer, bending magnet, ion dump, and calorimeter. Nearly all of the control and probe signals between the NB test stand and the control room were made to be transmitted through the optical cables. Failures of coolant flow or beam line vacuum pressure were made to be safely blocked from influencing the system by an appropriate interlock circuit that will shut down the extraction voltage application to the system or prevent damages to the vacuum components. Preliminary estimation of the beam power through the calorimetric measurement shows that 87.9% of the total power of the 60kV/18A beam with 200 seconds duration is absorbed by the calorimeter surface. Most of these I&C results would be highly appropriate for the construction of the main NBI facility for the KSTAR national fusion research project.

Development of Optical Signal Transmission for the KSTAR Project Pertaining to Instrumentation and Control of the Neutral Beam Test Stand at KAERI

  • Jung, Ki-Sok;Oh, Byung-Hoon
    • KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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    • v.5B no.3
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    • pp.289-295
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    • 2005
  • Instrumentation and Control (I&C) of the Neutral Beam Test Stand (NB- TS) Facility at the Korea Atomic Energy Research Institute (KAERI) for the Korea Superconducting Tokamak Advanced Research (KSTAR) project has been underway since the start of the project to answer the diverse requests arising from the various facets of the development and construction phases of the project. Optical signal transmission constitutes a significant portion of I&C works and has been performed for the entirety of the project. During the NB- TS construction and related experiments, significant achievements to a more accurate as well as more refined optical signal transmissions have been made. Examples of those I&C works that utilized the optical signal transmission are the Langmuir probe signal transmission, gradient grid current signal transmission, gas flow control and signal transmission, ion source temperature measurement, beam line component temperature monitoring, and coolant flow signal transmission, etc. These optical signal transition provisions are now performing part of the indispensable functions for the proper operation of the NB- TS facility. Attained experience and expertise are expected to be well applied to the upcoming main neutral beam injection (NBI) system construction for the KSTAR project.

Novel Scanning Tunneling Spectroscopy for Volatile Adborbates

  • Choi, Eun-Yeoung;Lee, Youn-Joo;Lyo, In-Whan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.58-58
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    • 2010
  • Reactive or unstable adsorbates are often difficult to study spectroscopically. They may have, for instance, resonance states lying close to the Fermi level, inducing them to desorb or decompose by the probe itself, low-energy tunneling electrons. In order to overcome this limitation, we developed a novel method, which we call x-ramp scan. The method sweeps the bias voltage, with the simutaneous scan along the imaging direction, in a constant current mode. This mapping yields the tip-height variation as a function of bias, or Z(V), at nominally always fresh surface. We applied this method to the investigation of methanol-induced molecular features, attributed to methoxy, found on NiAl(110) surface. These were produced by methanol molecules deposited by a pulse injection method onto the metallic surface. Our study shows adsorbed methoxy are very reactive to the bias voltage, rendering the standard spectroscopy useless. Our new x-ramp scan shows that the decomposition of adsorbates occurs at the sample bias of 3.63 V, and proceeds with the lifetime of a few milliseconds. The details of the method will be provided at the discussion.

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