• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.155-158
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• 2000

A new control method for single-phase shunt active power line conditioners(APLC's) operated under zero average power consumption is proposed in this paper. The amplitude of the sinusoidal source current which is in-phase with the source voltage can be determined from the average value of the instantaneous load power. Then the command current for the shunt APLC is obtained by subtraction the source current from the load current. Neither bulky filter nor time-consuming computation is required. The shunt power compensator supplies all the harmonics of he load current and the source only supplies the fundamental component,. Experimental results on a prototype verify the feasibility of the presented scheme,

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.94-100
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• 2017

Stress drain bias dependent current model is proposed for sub-70-nm p-channel metal-oxide semiconductor field-effect transistors (pMOSFETs) under drain-avalanche-hot-carrier (DAHC-) mechanism. The proposed model describes the both on-current and off-current degradation by using two device parameters: channel length variation (${\Delta}L_{ch}$) and threshold voltage shift (${\Delta}V_{th}$). Also, it is a simple and effective model of predicting reliable circuit operation and standby power consumption.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.42-47
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• 2017

This paper proposes a new series-coupled voltage-controlled oscillator (VCO). The proposed VCO consists of four current-reuse Armstrong VCOs (CRA-VCOs) coupled by four transformers. The series-coupling, current-reuse, and Armstrong topologies improve the phase noise performance by increasing the negative-Gm of the VCO core with half the current consumption of a conventional differential VCO. The proposed VCO consumes 6.54 mW at 9.78 GHz from a 1-V supply voltage. The measured phase noise is -115.1 dBc/Hz at an offset frequency of 1 MHz, and the FoM is -186.5 dBc/Hz. The frequency tuning range is from 9.38-10.52 GHz. The core area is $0.49mm^2$ in a $0.13-{\mu}m$ CMOS process.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.2
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• pp.110-116
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• 2009

The prominent advantages of Dual Material Surrounding Gate (DMSG) MOSFETs are higher speed, higher current drive, lower power consumption, enhanced short channel immunity and increased packing density, thus promising new opportunities for scaling and advanced design. In this Paper, we present Transconductance-to-drain current ratio and electric field distribution model for dual material surrounding gate (DMSGTs) MOSFETs. Transconductance-to-drain current ratio is a better criterion to access the performance of a device than the transconductance. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.629-633
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• 2015

An active balun using current steering for phase correction is presented. The proposed active balun is constructed with two different unit balun structures based on current steering to reduce phase and amplitude errors. This type of topology can be compared with the conventional phase and amplitude correction techniques which do not incorporate the current steering. Designed and fabricated active balun in $0.18{\mu}m$ CMOS process operates over 0.95 - 1.45 GHz band, showing input reflection coefficient under -15 dB, phase error of $11^{\circ}$ and gain error of 0.5 dB. Gain is measured to be 0.3 dB maximum and power consumption of 7.2 mW is measured.

• Journal of Industrial Technology
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• v.34
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• pp.61-66
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• 2014

Recently, Because the consumption of electricity is increased, having stable electricity supply and diagnosis of the power device is important. In this paper, I propose a diagnostic techniques of the leakage current for switchgear based on LabVIEW NI's. Using the data obtained from the leakage current sensor installed in switchgear panels, in performed continuously diagnosis, notifications and warnings can be the administrator immediately results. It is expected accordingly, the administrator will be able to take prompt action. Using the virtual switchgear with a PXI NI's, war tested the proposed techniques.

• Progress in Superconductivity and Cryogenics
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• v.15 no.4
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• pp.34-38
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• 2013

According to the increase of electric consumption nowadays, power system becomes complicated. Due to this, the size of single line-to-ground fault from power system also increases to have many problems. In order to resolve these problems effectively, an Superconducting Fault Current Limiter(SFCL) was proposed and continuous study has been done. In this paper, an SFCL was combined to the neutral line of a transformer. An superconductivity has the characteristics of zero resistance below critical temperature. because of this, SFCL has nearly zero resistance. so we connecting SFCL to neutral line will not only have any loss in the normal operation but also have the less burden of electric power because of only limiting the initial fault current. We analyzed the characteristics of current, voltage according to the changes of turn ratio of 3 phase system in case of combinations of an SFCL to the neutral line. It was confirmed that the limiting rate of initial fault current by the increase of turn ratio was reduced.

• Journal of The Korean Association For Science Education
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• v.10 no.1
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• pp.47-55
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• 1990

The purposes of this study are to investigate Korean middle school students' conceptions related to electric current, and to analyze their changes in explanations about current after their observations of the related phenomena The subjects of the study were 20 students from one middle school in Seoul The conclusions of the studty are as follows: 1, Korean middle school students have various misconceptions such as current consumption model, sequential model, monopole model, non-various current model, the most students have sequential model' 2. When an evidence is introduced, some students do not perceive the phenomena as the teacher attempts. 3. When an evidence was introduced, after observation of the evidence some of the students who had misconceptions changed their explanatios, which were not always correct explanations, and the others did not change their expanations, which their observations were mostly incorrect.

• Membrane and Water Treatment
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• v.8 no.2
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• pp.201-210
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• 2017

We investigated the effect of applied voltage and electrolyte concentration on the nitrate removal and its energy/current efficiency during the electrodialysis. The current increased as the applied voltage increased up to 30 V showing the limiting current density around 20 V. The nitrate removal efficiency (31 to 71% in 240 min) and energy consumption (11 to $77W{\cdot}h/L$) gradually increased as the applied voltage increased from 10 to 30 V. The highest current efficiency was obtained at 20 V. The increase in electrolyte concentration from 100 to 500 mM led to the dramatic increase of nitrate removal efficiency with much faster removal kinetics (100 % in 10 min).

• Journal of Advanced Information Technology and Convergence
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• v.8 no.2
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• pp.59-67
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• 2018

The minimum power supply voltage of a typical bandgap current reference (BGCR) is limited by operating temperature and input common mode range (ICMR) of a feedback amplifier. A new BGCR using a bandgap voltage generator (BGVG) is proposed to minimize the effect of temperature, supply voltage, and process variation. The BGVG is designed with proportional to absolute temperature (PTAT) characteristic, and a feedback amplifier is designed with weak-inversion transistors for low voltage operation. It is verified with a $0.18-{\mu}m$ CMOS process with five corners for MOS transistors and three corners for BJTs. The proposed circuit is superior to other reported current references under temperature variation from $-40^{\circ}C$ to $120^{\circ}C$ and power supply variation from 1.2 V to 1.8 V. The total power consumption is $126{\mu}W$ under the conditions that the power supply voltage is 1.2 V, the output current is $10{\mu}A$, and the operating temperature is $20^{\circ}C$.