• Title/Summary/Keyword: Cu-phthalocyanine

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Tunneling Spectra in Organic Cu-Pc/$Bi_2Sr_2CaCu_2O_{8+\delta}$ Tunnel Junctions

  • Kim, Sunmi;E, Jungyoon;Lee, Kiejin;Ishbas, Takayuki;Lee, Yang-San
    • Progress in Superconductivity
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    • v.3 no.1
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    • pp.41-44
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    • 2001
  • We report the current transport properties of a normal metal/organic conductor/ superconductor tunnel junction as a novel high- $T_{c}$ superconducting three terminal device. The organic copper (II) phthalocyanine (Cu-Pc) layer was used far a polaronic quasiparticle (QP) injector. The injection of polaronic QP from the Cu-Pc interlayer into a superconductor $Bi_2$$Sr_2$$CaCu_2$ $O_{8+}$ $\delta$/(BSCCO) thin film generated a substantially larger nonequilibrium effect as compared to the normal QP injection current. The tunneling spectroscopy of an Au/cu-PC/BSCCO junction exhibited a zero bias conductance peak which may be due to Andreev reflection at a Cu-Pc/d-wave superconductor junction.n..

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Structural and photoelectrical properties of copper phthalocyanine(CuPc) thin film on Si substrate by thermal evaporation (Si 기판위에 열증착법으로 제조한 copper phthalocyanine(CuPc) 박막의 구조 및 광전특성)

  • Lee, Hea-Yeon;Jeong, Jung-Hyun;Lee, Jong-Kyu
    • Journal of Sensor Science and Technology
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    • v.6 no.5
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    • pp.407-413
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    • 1997
  • The crystallized CuPc(copper phthalocyanine) film on a p-type <100> Si substrate is prepared at the substrate temperature of $300^{\circ}C$ by thermal evaporation. X -ray diffraction analysis showed the CuPc film to have a-axis oriented structure. For the measurement of photovoltaic characteristics of the CuPc/Si film and the Si substrate, a transverse current-voltage (I-V) curve is observed. In the dark, the Au/Si junction is shown to be ohmic contact. However, under illumination, a photovoltaic effect is not observed. The I-V curve in the dark indicates that the CuPc film on Si may form an ohmic contact. Since the CuPc film is a p-type semiconductor, the CuPc/p-Si junction has no barrier at the interface. Under illumination, the CuPc/Si junction shows a large photocurrent comparing with that of the wafer. The result indicates that the CuPc layer plays an important role in the photocarrier generation under red illumination (600 nm). The CuPc/Si film shows the photo voltaic characteristics with a short-circuit photocurrent ($J_{sc}$) of $4.29\;mA/cm^{2}$ and an open-circuit voltage ($V_{oc}$) of 12 mA.

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Surface Potential Properties of CuPc/Au Interface with Varying Temperature (CuPc/Au 계면에서의 온도 변화에 따른 표면전위 특성)

  • Lee, Ho-Shik;Park, Yong-Pil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.10
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    • pp.934-937
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    • 2008
  • Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. So we need the effect of the substituent group attached to the phthalocyanine on the surface potential was investigated by Kelvin probe method with varying temperature of the substrate. We were obtained the positive shift of the surface potential for CuPc thin film. We observed the electron displacement at the interface between Au electrode and CuPc layer and we were confirmed by the surface potential measurement.

Threshold Voltage Properties of OFET with CuPc Active Material

  • Lee, Ho-Shik;Kim, Seong-Geol
    • Journal of information and communication convergence engineering
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    • v.13 no.4
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    • pp.257-263
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    • 2015
  • In this study, organic field-effect transistors (OFETs) using a copper phthalocyanine (CuPc) material as an active layer and SiO2 as a gate insulator were fabricated with varying active layer thicknesses and channel lengths. Further, using a thermal evaporation method in a high-vacuum system, we fabricated a CuPc FET device of the top-contact type and used Au materials for the source and drain electrodes. In order to discuss the channel formation and FET characteristics, we observed the typical current-voltage characteristics and calculated the threshold voltage of the CuPc FET device. We also found that the capacitance reached approximately 97 pF at a negative applied voltage and increased upon the accumulation of carriers at the interface of the metal and the CuPc material. We observed the typical behavior of a FET when used as an n-channel FET. Moreover, we calculated the threshold voltage to be about 15-20 V at VDS = -80 V.

Surface Potential Properties of CuPc/Au Interface with Varying Temperature (CuPc/Au 구조에서의 온도 변화에 따른 계면에서의 표면전위 특성)

  • Lee, Ho-Shik;Park, Yong-Pil;Kim, Young-Pyo;Yu, Seong-Mi;Cheon, Min-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.492-493
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    • 2007
  • Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine(CuPc) based field-effect transistor with different metal electrode. So we need the effect of the substituent group attached to the phthalocyanine on the surface potential was investigated by Kelvin probe method with varying temperature of the substrate. We were obtained the positive shift of the surface potential for CuPc thin film. We observed the electron displacement at the interface between Au electrode and CuPc layer and we were confirmed by the surface potential measurement.

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Synthesis and Characteristic of ${\epsilon}$-type Copper Phthalocyanine Used as Color Filter in LCD Panel (입실론 프탈로시아닌의 합성 및 특성에 대한 연구)

  • Kim, Jae Hwan;Kim, Song Hyuk;Kim, Seong Jin;Hong, Seong-Soo;Lee, Gun-Dae;Park, Seong Soo
    • Applied Chemistry for Engineering
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    • v.23 no.2
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    • pp.138-142
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    • 2012
  • The ${\epsilon}$ type copper phthalocyanine (${\epsilon}$-CuPc), called as a pigment blue 15 : 6, is a significant material to produce a blue pixel in LCD (Liquid Crystal Display) panel. In this study, ${\epsilon}$-CuPc sample was synthesized at various reaction conditions by applying the seed method using ${\epsilon}$-CuPc nanoparticles as a seed. Adequate synthetic conditions of the samples were selected by analyzing and comparing crystalline structure, crystalline purity, microstructure, and synthetic yield of the samples with ${\alpha}$ and ${\beta}$ crystalline CuPc samples. The chemical and crystalline structure of the samples were tested using FT-IR spectrometer and X-ray diffractometry, respectively. The shape of the particle was examined using field emission scanning electiron microscope while the thermal property was tested utilizing thermogravimetric analysis.

Electronic and Structural Properties of Interfaces in Fe∖MgO∖Cu-Phthalocyanine Hybrid Structures (Fe∖MgO∖Cu-Phthalocyanine 복합구조 계면구조와 그 전자기적 특성)

  • Bae, Yu Jeong;Lee, Nyun Jong;Kim, Tae Hee;Pratt, Andrew
    • Journal of the Korean Magnetics Society
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    • v.23 no.6
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    • pp.184-187
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    • 2013
  • The influence of insertion of an ultra-thin Cu-Phthalocyanine (CuPc) between MgO barrier and ferromagnetic layer in magnetic tunnel juctions (MTJs) was investigated. In order to understand the relation between the electronic and structural properties of Fe${\backslash}$MgO${\backslash}$CuPc, the surface (or interface) analysis was carried out systematically by using spin polarized metastable He de-excited spectroscopy for the CuPc films grown on the Si(001)${\backslash}$5 nm MgO(001)${\backslash}$7 nm Fe(001)${\backslash}$1.6 nm MgO(001) multilayer structure as the thickness of CuPc increases from 0 to 5 nm. In particular, for the 1.6 nm CuPc surface, a rather strong spin asymmetry between up- and down-spin band appears while it becomes weaker or disappears for the CuPc films thinner or thicker than ~1.6 nm. Our results emphasize the importance of the interfacial electronic properties of organic layers in the spin transport of the hybrid MTJs.

Influence of a Stacked-CuPc Layer on the Performance of Organic Light-Emitting Diodes

  • Choe Youngson;Park Si Young;Park Dae Won;Kim Wonho
    • Macromolecular Research
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    • v.14 no.1
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    • pp.38-44
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    • 2006
  • Vacuum deposited copper phthalocyanine (CuPc) was placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in a multi-layered, organic, light-emitting diode (OLEOs). The well-stacked CuPc layer increased the stability and efficiency of the devices. Thermal annealing after CuPc deposition and magnetic field treatment during CuPc deposition were performed to obtain a stacked-CuPc layer; the former increased the stacking density of the CuPc molecules and the alignment of the CuPc film. Thermal annealing at about 100$^{circ}C$ increased the current flow through the CuPc layer by over 25$\%$. Surface roughness decreased from 4.12 to 3.65 nm and spikes were lowered at the film surface as well. However, magnetic field treatment during deposition was less effective than thermal treatment. Eventually, a higher luminescence at a given voltage was obtained when a thermally-annealed CuPc layer was placed in the present, multi-layered, ITO/CuPc/NPD/Alq3/LiF/AI devices. Thermal annealing at about 100$^{circ}C$ for 3 h produced the most efficient, multi-layered EL devices in the present study.

Improvement of Rate Capability and Low-temperature Performances of Graphite Negative Electrode by Surface Treatment with Copper Phthalocyanine (구리 프탈로시아닌으로 표면처리된 흑연 음극의 속도특성 및 저온성능 개선)

  • Jurng, Sunhyung;Park, Sangjin;Ryu, Ji Heon;Oh, Seung M.
    • Journal of the Korean Electrochemical Society
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    • v.18 no.3
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    • pp.130-135
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    • 2015
  • The rate capability and low-temperature characteristics of graphite electrode are investigated after surface treatment with copper phthalocyanine (CuPc) or phthalocyanine (Pc). Uniform coating layers comprising amorphous carbon or copper are generated after the treatment. The rate performance of graphite electrodes is enhanced by the surface treatment, which is more prominent with CuPc. The resistance of the graphite electrode estimated from electrochemical impedance spectroscopy and pulse resistance measurement is the smallest for the CuPc-treated graphite. It is likely that the amorphous carbon layer formed by the decomposition of Pc facilitates $Li^+$ diffusion and the metallic copper derived from CuPc improves the electrical conductivity of the graphite electrode.

Electroluminescent Properties of Organic Light-emitting Diodes with Hole-injection Layer of CuPc

  • Lee, Jung-Bok;Lee, Won-Jae;Kim, Tae-Wan
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.1
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    • pp.41-44
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    • 2014
  • Emission properties of the organic light-emitting diodes were investigated with the use of a hole-injection layer of copper(II)-phthalocyanine (CuPc). The manufactured device structure is indium-tin-oxide (ITO) (180 nm)/CuPc (0~50 nm)/N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD) (40 nm)/tris-(8-hydroxyquinoline) aluminum (III) ($Alq_3$) (60 nm)/Al(100 nm). We investigated the luminescence properties of $Alq_3$ which is affected by the CuPc hole-injection layer. Also, we studied the influence of light-emission properties in the structure of an ITO/CuPc/TPD/$Alq_3$/Al device depending on the several thicknesses of CuPc (0~50 nm) layer. As a result, it was found that the hole injection occurs smoothly in the device with 20 nm thick CuPc layer, and the properties become significantly worse in the device with a CuPc layer thickness higher than 40 nm. We studied the topography and external quantum efficiency depending on the layer thickness of CuPc. Also, we analyzed the electroluminescent characteristics in the low and high-voltage range.