• Journal of Magnetics
• /
• v.17 no.4
• /
• pp.261-264
• /
• 2012

Interfacial properties of 5 nm MgO(001)/7 nm Fe(001)/1.8 nm MgO(001)/t nm Cu-phthalocyanine (CuPc) hybrid multilayers with t = 0, 1, 7, and 10 were investigated by using x-ray photoemission spectroscopy (XPS). Rather sharp interfacial properties were observed in the CuPc films grown on an epitaxial MgO/Fe/MgO(001) trilayer than a MgO/Fe(001) bilayer. This work suggests a new way to improve device performance of organic spintronic devices by utilizing an artificially grown MgO(001) thin layer.

• Journal of the Korean Graphic Arts Communication Society
• /
• v.11 no.1
• /
• pp.103-122
• /
• 1993

A cause and counterplan of the increase in dark decay rate of$\varepsilon$-CuPc/PVCz photoreceptor which is consist of the carrier generation layer (CGL) of$\varepsilon$type copper phthalocyanine ($\varepsilon$-CuPc) thin film by an aqueous coating method and the carrier transport layer (CTL) of polyvinylcarbazol (PVCz) by spin coating, are studied in this paper. Electrochemical deposition of CGL was accompanied by an increase in work function of the aluminium substrate during the processes and the enhanced work function 5.3 eV rose above the ionization potential 5.16 eV of $\varepsilon$-CuPc. This resulted in the increased injection of holes from substrate into CGL and a fast dark decay rate. Improved photoreceptor, an electron-transport $\varepsilon$-CuPc/TNF photoreceptor, led to lowing of dark decay rate and increasing of photosensitivity. The carrier generation efficiency (ηg), carrier injection efficiency (ηi) and xerographic gain (G) of the $\varepsilon$-CuPc/TNF photoreceptor were obtained by XTOF method and PIDC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.395-396
• /
• 2008

Copper-Phthalocyanine (Cu-Pc) thin films of 100nm thickness have been deposited on silicon substrates as the different heating temperatures by thermal evaporation deposition technique. X-ray patterns showed with different temperature conditions at the $2\theta$ range of 5-$55^{\circ}$. The surface roughness of Cu-Pc thin films was investigated by using an atomic force microscope (AFM). A scanning electron microscope (SEM) has been used to characterize the micro-structures and morphologies depended on the substrate temperatures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.6
• /
• pp.641-646
• /
• 2004

We report the changes of the microwave reflection coefficients S$_{11}$ of copper(II)-phthalocyanine (CuPc) thin films by using a near-field microwave microscope(NSMM) in order to understand the phase transition of CuPc. For a NSMM system, a high-quality microstrip resonator coupled with a dielectric resonator was used. CuPc thin films were prepared on the pre-heated glass substrates using a thermal evaporation method. The reflection coefficients S$_{11}$ of CuPc thin films were changed by the dependence on the substrate pre-heating temperatures. By comparing reflection coefficient S$_{11}$ and crystal structures, we found the phase transition of CuPc thin films from $\alpha$-phase to $\beta$-phase at the substrate heating temperature 200 $^{\circ}C$./TEX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.927-930
• /
• 2001

We studied the electrical properties of Copper(II)-phthalocyanine (Cu-Pc) as a hole transport layer in organic light emitting devices (OLEDs). OLEDs were constructed with ITO/CU-Pc/triphenyl-diamine (TPD)/tris-(8-hydroxyquinoline) aluminum ( Alq$_3$) + 4- (Dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM)/Al. It was consisted of a thin DCM in Alq$_3$emission layer. We observed that the change of recombination zone was moved toward the cathode as the hole mobility increased due to the heat-treatment temperature of Cu-Pc layer increased.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.6
• /
• pp.851-856
• /
• 1996

Copper Phthalocyanine (CuPc) thin films were fabricated on the silicon wafers by plasma activated evaporation method and structural analysis were carried out with various spectroscopies. The CuPc films had dense and smooth morphology and they also showed good mechanical properties and chemical resistance. The main molecular structure of the CuPc, which is the conjugated aromatic heterocyclic ring structure, was maintained even in the plasma process. However, metal-ligand (Cu-N) bands were deformed by the plasma process and the structure became amorphous especially at higher process pressures. Oxygen impurities were incorporated in the film and carboxyl functional groups were formed at the peripheral benzene ring. The structure and morphology of the films were dependent on the process pressure but relatively irrespective of the RF power.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1319-1321
• /
• 2009

Copper phthalocyanine (CuPc) Field-effect transistors (FETs) was successfully fabricated on plastic substrates. Orientation of CuPc crystallites on substrate could be obtained via rubbing process. It was revealed that CuPc crystallites were perpendicularly aligned on PES substrates with the rubbing direction. The performance of FETs was affected by orientation of CuPc on rubbed substrates.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.337-337
• /
• 2011

The elecronic absorption and surface morphology evolution of two types of molecular double layer thin films, copper phthalocyanine(CuPc) layer deposited on top of chloro[subphtalocyaninato]boron(III) (SubPc) layer, denoted as SubPc/CuPc, and vice versa, at various thicknesses were invertigated using ultraviolet(UV)-visible spectroscopy and atomic force microscopy (AFM). Both types of double layer structures showed similar broadened absorption patterns in UV-visible region which were well consistent with fitted spectra by a simple linear combination of single layer absorption spectra of two materials. In contrast, the surface morphology of double layer structures was dependent on the order of deposition. For CuPc/SubPc structures, the surface morphology was characterized by elongated grains, characteristic of SubPc thin films, indicating the morphological influence of underlying CuPc layer on subsequent SubPc layer was not large. For SubPc/CuPc structures, however, the underlying SubPc layer acted as a morphological template for the subsequently deposited CuPc layer. It was also observed that the grain size of CuPc layer varied by the thickness of underlying SubPc layer.

• Journal of the Korean institute of surface engineering
• /
• v.56 no.1
• /
• pp.40-54
• /
• 2023

In this work, we synthesized a novel electrochemical sensing materials based on tetracarboxylic copper phthalocyanine (TcCuPtc) conjugated PANI (TcCuPtc@PANI). The synthesized materials were employed to modify the screen-printed carbon electrode (SPCE) for the selective sensing of 4-nitrophenol. The TcCuPtc was conjugated with conducting polymer of PANI through the electrostatic interaction and π-π electron conjugation, the polymer film of PANI to inhibit the leakage of TcCuPtc from the surface of the electrode. The prepared TcCuPtc@PANI were characterized and confirmed by scanning electron microscopy (SEM) with EDX, ATR-IR, UV-vis absorption spectroscopy, cyclic voltammetry, and differential pulse voltammetry techniques. The prepared TcCuPtc@PANI/SPCE showed an excellent electrocatalytic sensing of 4-NP in the linear concentrations from 3 to 500 nM with a LOD of 0.03 nM and a sensitivity of 8.8294 ㎂/nM cm^-2. However, the prepared TcCuPtc@PANI/SPCE showed selective sensing of 4-NP in the presence of other interfering species. The practical applicability of the TcCuPtc@PANI/SPCE was employed for the sensing of 4-NP in different water samples by standard addition method and showed satisfactory recovery results.

• Transactions on Electrical and Electronic Materials
• /
• v.8 no.3
• /
• pp.139-142
• /
• 2007

Organic field-effect transistor (FET) based on a copper Phthalocyanine (CuPc) material as an active layer and a $SiO_2$ as a gate insulator were fabricated and analyzed. We measured the typical FET characteristics of CuPc in air. The electrical characteristics of the CuPc FET device were analyzed by a Maxwell-Wagner model. The Maxwell-Wagner model employed in analyzing double-layer dielectric system was helpful to explain the C-V and I-V characteristics of the FET device. In order to further clarity the channel formation of the CuPc FET, optical second harmonic generation (SHG) measurement was also employed. Interestingly, SHG modulation was not observed for the CuPc FET. This result indicates that the accumulation of charge from bulk CuPc makes a significant contribution.