• Title/Summary/Keyword: Cu-decoration

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Enhanced flux pinning property of GdBa2Cu3O7-x films by ferromagnetic surface decoration

  • Song, C.Y.;Oh, J.Y.;Ko, Y.J.;Lee, J.M.;Kang, W.N.;Kang, B.
    • Progress in Superconductivity and Cryogenics
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    • v.22 no.2
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    • pp.21-25
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    • 2020
  • We investigated the flux pinning property of GdBa2Cu3O7-x (GdBCO) films on top of La0.7Sr0.3MnO3 (LSMO) nanoparticles deposited by a surface decoration. Both GdBCO films and LSMO nano particles were deposited by pulsed laser deposition and the number of laser pulses were varied from 80 to 320 in order to control the density of the LSMO nanoparticles. The magnetization data at 77 K showed that the critical current density (Jc) was enhanced in all of the GdBCO films with LSMO nanoparticles and that the Jc enhancement was found to be inversely proportional to the LSMO nanoparticle density. Structural analyses revealed that LSMO nanoparticles induce a compressive strain in the GdBCO films resulting in a disordering in the CuO2 plane. Therefore, the enhanced flux pinning property in the GdBCO with LSMO nanoparticles was attributed to the competing effect between the increase of pinning centers and the increase of compressive strain in the superconducting phase.

Characteristic Study for Defect of Top Si and Buried Oxide Layer on the Bonded SOI Wafer (Bonded SOI wafer의 top Si과 buried oxide layer의 결함에 대한 연구)

  • Kim Suk-Goo;Paik Un-gyu;Park Jea-Gun
    • Korean Journal of Materials Research
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    • v.14 no.6
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    • pp.413-419
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    • 2004
  • Recently, Silicon On Insulator (SOI) devices emerged to achieve better device characteristics such as higher operation speed, lower power consumption and latch-up immunity. Nevertheless, there are many detrimental defects in SOI wafers such as hydrofluoric-acid (HF)-defects, pinhole, islands, threading dislocations (TD), pyramid stacking faults (PSF), and surface roughness originating from quality of buried oxide film layer. Although the number of defects in SOI wafers has been greatly reduced over the past decade, the turn over of high-speed microprocessors using SOI wafers has been delayed because of unknown defects in SOI wafers. A new characterization method is proposed to investigate the crystalline quality, the buried oxide integrity and some electrical parameters of bonded SOI wafers. In this study, major surface defects in bonded SOI are reviewed using HF dipping, Secco etching, Cu-decoration followed by focused ion beam (FIB) and transmission electron microscope (TEM).

Identifying and quantitating defects on chemical vapor deposition grown graphene layers by selected electrochemical deposition of Au nanoparticles

  • So, Hye-Mi;Mun, Jeong-Hun;Bang, Gyeong-Sook;Kim, Taek-Yong;Cho, Byung-Jin;Ahn, Chi-Won
    • Carbon letters
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    • v.13 no.1
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    • pp.56-59
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    • 2012
  • The defect sites on chemical vapor deposition grown graphene are investigated through the selective electrochemical deposition (SED) of Au nanoparticles. For SED of Au nanoparticles, an engineered potential pulse is applied to the working electrode versus the reference electrode, thereby highlighting the defect sites, which are more reactive relative to the pristine surface. Most defect sites decorated by Au nanoparticles are situated along the Cu grain boundaries, implying that the origin of the defects lies in the synthesis of uneven graphene layers on the rough Cu surface.

Nanolayered CuWO4 Decoration on Fluorine-Doped SnO2 Inverse Opals for Solar Water Oxidation

  • Cho, Ha Eun;Yun, Gun;Arunachalam, Maheswari;Ahn, Kwang-Soon;Kim, Chung Soo;Lim, Dong-Ha;Kang, Soon Hyung
    • Journal of Electrochemical Science and Technology
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    • v.9 no.4
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    • pp.282-291
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    • 2018
  • The pristine fluorine-doped $SnO_2$ (abbreviated as FTO) inverse opal (IO) was developed using a 410 nm polystyrene bead template. The nanolayered copper tungsten oxide ($CuWO_4$) was decorated on the FTO IO film using a facile electrochemical deposition, subsequently followed by annealing at $500^{\circ}C$ for 90 min. The morphologies, crystalline structure, optical properties and photoelectrochemical characteristics of the FTO and $CuWO_4$-decorated FTO (briefly denoted as $FTO/CuWO_4$) IO film were investigated by field emission scanning electron microscopy, X-ray diffraction, UV-vis spectroscopy and electrochemical impedance spectroscopy, showing FTO IO in the hexagonally closed-pack arrangement with a pore diameter and wall thickness of about 300 nm and 20 nm, respectively. Above this film, the $CuWO_4$ was electrodeposited by controlling the cycling number in cyclic voltammetry, suggesting that the $CuWO_4$ formed during 4 cycles (abbreviated as $CuWO_4$(4 cycles)) on FTO IO film exhibited partial distribution of $CuWO_4$ nanoparticles. Additional distribution of $CuWO_4$ nanoparticles was observed in the case of $FTO/CuWO_4$(8 cycles) IO film. The $CuWO_4$ layer exhibits triclinic structure with an indirect band gap of approximately 2.5 eV and shows the enhanced visible light absorption. The photoelectrochemical (PEC) behavior was evaluated in the 0.5 M $Na_2SO_4$ solution under solar illumination, suggesting that the $FTO/CuWO_4$(4 cycles) IO films exhibit a photocurrent density ($J_{sc}$) of $0.42mA/cm^2$ at 1.23 V vs. reversible hydrogen electrode (RHE, denoted as $V_{RHE}$), while the FTO IO and $FTO/CuWO_4$(8 cycles) IO films exhibited a $J_{sc}$ of 0.14 and $0.24mA/cm^2$ at $1.23V_{RHE}$, respectively. This difference can be explained by the increased visible light absorption by the $CuWO_4$ layer and the favorable charge separation/transfer event in the cascading band alignment between FTO and $CuWO_4$ layer, enhancing the overall PEC performance.

Nature of Surface and Bulk Defects Induced by Epitaxial Growth in Epitaxial Layer Transfer Wafers

  • Kim, Suk-Goo;Park, Jea-Gun;Paik, Un-Gyu
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.4
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    • pp.143-147
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    • 2004
  • Surface defects and bulk defects on SOI wafers are studied. Two new metrologies have been proposed to characterize surface and bulk defects in epitaxial layer transfer (ELTRAN) wafers. They included the following: i) laser scattering particle counter and coordinated atomic force microscopy (AFM) and Cu-decoration for defect isolation and ii) cross-sectional transmission electron microscope (TEM) foil preparation using focused ion beam (FIB) and TEM investigation for defect morphology observation. The size of defect is 7.29 urn by AFM analysis, the density of defect is 0.36 /cm$^2$ at as-direct surface oxide defect (DSOD), 2.52 /cm$^2$ at ox-DSOD. A hole was formed locally without either the silicon or the buried oxide layer (Square Defect) in surface defect. Most of surface defects in ELTRAN wafers originate from particle on the porous silicon.

Stability of Black Soybean Pigment Extract (검정콩 종피 색소추출액의 안정성)

  • Son, Jun-Ho;Choung, Myoung-Gun;Choi, Hee-Jin;Jang, Un-Bin;Bae, Jong-Ho;Lee, Hee-Duck;Choi, Cheong
    • Applied Biological Chemistry
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    • v.45 no.3
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    • pp.179-184
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    • 2002
  • To examine utilization of Korean black soybean as a natural pigment, the effects of temperature, carbohydrate, organic acid, vitamin C and metal ion were investigated. Korean black soybean pigment was more stable than other anthocyanin pigments when temperature was abused. There was no darkness effect in carbohydrate. In organic acid, the color intensity was increased. The vitamin C addition negatively affected on color of anthocyanin. Among the metal ions tested, $Cu^{2+}$ and $Zn^{2+}$ was not affected but $Mn^{2+}$ makes it unstable. Results indicate that Korean black soybean pigment was more stable than other anthocyanin pigment in various environment at pH 3.

Re-conservation of the Iron Sword with Ring Pommel with Three-Pointed Leaf Decoration Excavated from Tomb No. 55 at the Dalseong Ancient Tomb Complex in Daegu and a Study of Its Production Method (대구 달성 55호분 출토 삼엽문이자태도의 재보존처리와 제작 기법 연구)

  • Lee, Huisung;Huh, Ilkwon;Ro, Jihyun;Park, Seungwon
    • Conservation Science in Museum
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    • v.24
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    • pp.1-16
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    • 2020
  • This paper presents the process of re-conservation and the results of research on the production method of the Iron Sword with Ring Pommel with Three-Pointed Leaf Decoration, one of the excavation findings from Tomb No. 55 in the Dalseong Ancient Tomb Complex in Daegu. This iron sword is a double weapon with two large swords housed within a single sheath. Four smaller swords are attached to the surface of the sheath, two on the upper portion and the other two below. It is the only such two-in-one weapon excavated intact thus far from an ancient Korean tomb. The records show that it underwent conservation treatment twice in the past. In this study, it was subjected to conservation treatment again to replace the stiffener in some cracking areas, and its material, composition, and production method were analyzed by CT, XRF analysis, and stereoscopic microscopy. The sword is mainly made of copper, but the golden component contains both gold and mercury, which suggests that the copper was plated in gold using mercury amalgamation. The examination of the production methods indicates that it was intended more to demonstrate the authority of its owner rather than to serve any practical use. The two upper small swords on the sheath were made in the same manner as the main swords, and the two small lower swords were cut from a single metal sheet. The sheath was made by cutting two metal sheets. Supports were used to attach the two small swords to the upper portion of the sheath, while the lower portion of the sheath was slit to allow the other two small swords to be inserted into it. The ring pommels of the main swords have a three-pointed leaf decoration. As for the other designs, the handle of the main sword features a series of semicircles, the decorative bands on the sheath have waves in dots, and the fish tail of the sheath shows diagonal lines of dots.

Antioxidantive, Phospholipase $A_2$ Inhibiting, and Anticancer Effect of Polyphenol Rich Fractions from Panax ginseng C. A. Meyer (한국산 인삼의 Polyphenol 분획물의 항산화, Phospholipase $A_2$ 및 암세포증식 억제효과)

  • Choi, Hee-Jin;Han, Ho-Suk;Park, Jung-Hye;Son, Jun-Ho;Bae, Jong-Ho;Seung, Tae-Su;Choi, Cheong
    • Applied Biological Chemistry
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    • v.46 no.3
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    • pp.251-256
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    • 2003
  • The polyphenol fractions of Korean ginseng were purified using Sephadex LH-20, MCI gel, Bondapak $C_{18}$ TLC, and HPLC from the 60% acetone soluble fraction. Fraction I showed 48.16%, 79.71% and 43.55% inhibition at 150 ppm against lipid oxidation in the presence of copper ion, superoxide and hydrogen peroxidation. Electron donating abilities of fraction II showed 35.17% inhibition at 200 ppm. Fraction III showed 48.49% and 25% inhibition at 150 ppm against lipid oxidation in the presence of ferrous ion and hydroxy radical ion. The phospholipase $A_2$ inhibitory effect of fraction III was 48.9% at the concentration of $60\;{\mu}g/ml$. The cytotoxic effects of fraction II was the highest (73.29% at 0.25 mg/ml) among the tested polyphenol fractions.