• 소성∙가공
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• 제7권5호
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• pp.465-473
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• 1998

The effect of alloying elements of Ag-Cu-Zr-X brazing alloy on the microstructure and the bond strength of $Al_2O_3/Ni-Cr$ brazed steel joint was investigated. The reaction layer, $ZrO_2$ (a=5.146 ${\AA}$ , b=5.213 ${\AA}$ , c=5.311 ${\AA}$ )was formed at the interface of $Al_2O_3/Ni-Cr$ steel joint by the redox reaction between alumina and Zr. The addition of An and Al to the Ag-Cu-Zr brazing alloy gave rise to changes in the thickness of the reaction product layer and the morphology of the brazement. Sn caused the segregation of Zr was decreased b Al the $ZrO_2$ layer formed at the Ag-Cu-Zr-Al alloy was thinner than that of $ZrO_2$ formed at the Ag-Cu-Zr-An alloy. The fracture shear strength was strongly dependent on the microstructure of the brazement. Brazing with Ag-Cu-Zr-Sn alloy resulted in a better bond strength than with Ag-Cu-Zr or Ag-Cu-Zr-Al alloy.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.84-87
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• 2003

Since Pb-free solder alloys have been used extensively in microelectronic packaging industry, the interaction between UBM (Under Bump Metallurgy) and solder is a critical issue because IMC (Intermetallic Compound) at the interface is critical for the adhesion of mechanical and the electrical contact for flip chip bonding. IMC growth must be fast during the reflow process to form stable IMC. Too fast IMC growth, however, is undesirable because it causes the dewetting of UBM and the unstable mechanical stability of thick IMC. UP to now. Ni and Cu are the most popular UBMs because electroplating is lower cost process than thin film deposition in vacuum for Al/Ni(V)/Cu or phased Cr-Cu. The consumption rate and the growth rate of IMC on Ni are lower than those of Cu. In contrast, the wetting of solder bumps on Cu is better than Ni. In addition, the residual stress of Cu is lower than that of Ni. Therefore, the alloy of Cu and Ni could be used as optimum UBM with both advantages of Ni and Cu. In this paper, the interfacial reactions of Sn-3.5Ag-0.7Cu solder on Ni-xCu alloy UBMs were investigated. The UBMs of Ni-Cu alloy were made on Si wafer. Thin Cr film and Cu film were used as adhesion layer and electroplating seed layer, respectively. And then, the solderable layer, Ni-Cu alloy, was deposited on the seed layer by electroplating. The UBM consumption rate and intermetallic growth on Ni-Cu alloy were studied as a function of time and Cu contents. And the IMCs between solder and UBM were analyzed with SEM, EDS, and TEM.

• 대한금속재료학회지
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• 제48권11호
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• pp.1041-1046
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• 2010

The reactions between a Sn-3.0Ag-0.5Cu solder alloy and electroless Ni/electroless Pd/immersion Au (ENEPIG) surface finishes with various Pd layer thicknesses (0, 0.05, 0.1, 0.2, $0.4{\mu}m$) were examined for the effect of the Pd layer on the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow at $235^{\circ}C$. The thin layer deposition of an electroless Pd (EP) between the electroless Ni ($7{\mu}m$) and immersion Au ($0.06{\mu}m$) plating on the Cu substrate significantly retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow. Its retarding effect increased with an increasing EP layer thickness. When the EP layer was thin (${\leq}0.1{\mu}m$), the retardation of the massive spalling was attributed to a reduced growth rate of the $(Cu,Ni)_6Sn_5$ layer and thus to a lowered consumption rate of Cu in the bulk solder during reflow. However, when the EP layer was thick (${\geq}0.2{\mu}m$), the initially dissolved Pd atoms in the molten solder resettled as $(Pd,Ni)Sn_4$ precipitates near the solder/$(Cu,Ni)_6Sn_5$ interface with an increasing reflow time. Since the Pd resettlement requires a continuous Ni supply across the $(Cu,Ni)_6Sn_5$ layer from the Ni(P) substrate, it suppressed the formation of $(Ni,Cu)_3Sn_4$ at the $(Cu,Ni)_6Sn_5/Ni(P)$ interface and retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.133-137
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• 2003

The effect of Bi additions to the eutectic Sn-3.5Ag solder alloy on the growth kinetics of the intermetallic compound (IMC) layers during solid-state aging of Sn-Ag-Bi/Cu solder joints has been Investigated. The Bi additions enhanced the growth rate of the total IMC layer comprising of $Cu_6Sn_5$ and $Cu_3Sn$ sublayers. This enhanced IMC growth rate was primarily due to the rapid increase In the growth rate of $Cu_6Sn_5$ sublayer. The growth rate of $Cu_3Sn$ sublayers was little influenced and appeared to be retarded by the Bi additions. The observed growth behavior of $Cu_6Sn_5$ and $Cu_3Sn$ sublayers could be understood if the interfacial reaction barrier at the $Cu_6Sn_5/solder$ interface were reduced by the segregation of Bi at the interface.

• Current Applied Physics
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• 제18권12호
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• pp.1571-1576
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• 2018

Recent study shows that the main reason for limiting CZTS device performance lies in the low open circuit voltage, and crucial factor that could affect the $V_{oc}$ is secondary phases like ZnS existing in absorber layer and its interfaces. In this work, the $Cu_2ZnSnS_4$ thin film solar cells were prepared by sputtering CuSn and CuZn alloy targets. Through tuning the Zn/Sn ratios of the CZTS thin films, the crystal structure, morphology, chemical composition and phase purity of CZTS thin films were characterized by X-Ray Diffraction (XRD), scanning electron microscopy (SEM) equipped with an energy dispersive spectrometer (EDS) and Raman spectroscopy. The statistics data show that the CZTS solar cell with a ratio of Zn/Sn = 1.2 have the best power convention efficiency of 5.07%. After HCl etching process, the CZTS thin film solar cell with the highest efficiency 5.41% was obtained, which demonstrated that CZTS film solar cells with high efficiency could be developed by sputtering CuSn and CuZn alloy targets.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.496-499
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• 2000

In order to investigate the effect of Ge addition to the Cu Matrix on the microstructure and the critical current density, four kinds of internal tin processed Nb$_3$Sn strands with pure Cu and Cu 0.2, 0.4, 0.6 wt％ Ge alloy were drawn to 0.8 mm diameter. The microstructure and critical current of internal tin processed Nb$_3$Sn wires that were heat treated at temperatures ranging from 68$0^{\circ}C$ to 74$0^{\circ}C$ for 240 h were investigated. The Ge addition to the matrix did not make workability worse. A Ge rich layer in the Cu-Ge matrix suppressed the growth of the Nb$_3$Sn layer and promoted grain coarsening. The greater the Ge content in the matrix, the lower the net Jc result after Nb$_3$Sn reaction heat treatment. There was no significant variation in Jc observed with heat treatment temperature ranging from 68$0^{\circ}C$ to 74$0^{\circ}C$.

• 한국주조공학회지
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• 제20권2호
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• pp.116-121
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• 2000

Interfacial reaction and mechanical properties between Sn-Zn-X ternary alloys(X : 3wt.%In, 4wt.%Bi) and Cu-substrate were studied. Cu/solder joints were subjected to aging treatments for up to 50days to see interfacial reaction at $100^{\circ}C$ and then were examined changes of microstructure and interfacial compound by optical microscopy, SEM and EDS. Cu/solder joints were aged to 30days and then loaded to failure at cross head speed of 0.3 mm $min^{-1}$ to measure tensile strength. According to the results of the solderability test, additions of In and Bi in the Sn-9wt.%Zn solder improve the wetting characteristics of the alloy and lower the melting temperature. Through the EDS and XRD analysis of Cu/Sn-9wt.%Zn solder joint, it was concluded that the intermetallic compound was the ${\gamma}-Cu_5Zn_8$ phase. Cu-Zn intermetallics at Cu/solder interfaces played an important role in both the microstructure evolution and failure of solder joints. Cu/solder joint strength was decreased by aging treatment, and those phenomenon was closely related to the thickening of intermetallic layer at Cu/solder joints.

• 대한금속재료학회지
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• 제47권12호
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• pp.842-851
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• 2009

The long-term reliability of Sn-0.3wt%Ag-0.7wt%Cu solder joints was evaluated and compared with Sn-3.0wt%Ag-0.5wt%Cu under thermal shock conditions. Test vehicles were prepared to use Sn-0.3Ag-0.7Cu and Sn-3.0Ag-0.5Cu solder alloys. To compare the shear strength of the solder joints, 0603, 1005, 1608, 2012, 3216 and 4232 multi-layer ceramic chip capacitors were used. A reflow soldering process was utilized in the preparation of the test vehicles involving a FR-4 material-based printed circuit board (PCB). To compare the shear strength degradation following the thermal shock cycles, a thermal shock test was conducted up to 2,000 cycles at temperatures ranging from $-40^{\circ}C$ to $85^{\circ}C$, with a dwell time of 30 min at each temperature. The shear strength of the solder joints of the chip capacitors was measured at every 500 cycles in each case. The intermetallic compounds (IMCs) of the solder joint interfaces werealso analyzed by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). The results showed that the reliability of Sn-0.3Ag-0.7Cu solder joints was very close to that of Sn-3.0Ag-0.5Cu. Consequently, it was confirmed that Sn-0.3Ag-0.7Cu solder alloy with a low silver content can be replaced with Sn-3.0Ag-0.5Cu.

• 마이크로전자및패키징학회지
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• 제16권4호
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• pp.23-28
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• 2009

Si 기판의 캐비티 형성이 불필요한 웨이퍼-레벨 MEMS capping 공정을 연구하였다. 4인치 Si 웨이퍼에 Ni 캡을 전기도금으로 형성하고 Ni 캡 rim을 Si 하부기판의 Cu rim에 에폭시 본딩한 후, SnBi debonding 층을 이용하여 상부기판을 Ni 캡 구조물로부터 debonding 하였다. 진공증착법으로 형성한 SnBi debonding 층은 Bi와 Sn 사이의 심한 증기압 차이에 의해 Bi/Sn의 2층 구조로 이루어져 있었다. SnBi 증착 층을 $150^{\circ}C$에서 15초 이상 유지시에는 Sn과 Bi 사이의 상호 확산에 의해 eutectic 상과 Bi-rich $\beta$상으로 이루어진 SnBi 합금이 형성되었다. $150^{\circ}C$에서 유지시 SnBi의 용융에 의해 Si 기판과 Ni 캡 구조물 사이의 debonding이 가능하였다.

• 한국주조공학회지
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• 제17권3호
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• pp.245-251
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• 1997

Solderability, interfacial reaction and mechanical properties of joint between Sn-Bi-Ag base solder and Cu-substrate were studied. Solders were subjected to aging treatments to see the change of mechanical properties for up to 30 days at $100^{\circ}C$, and then also examined the changes of microstructure and morphology of interfacial compound. Sn-Bi-Ag base solder showed about double tensile strength comparing to Pb-Sn eutectic solder. Addition of 0.7wt%Al in the Sn-Bi-Ag alloy increase spread area on Cu substrate under R-flux and helps to reduce the growth of intermetallic compound during heat-treatment. According to the aging experiments of Cu/solder joint, interfacial intermetallic compound layer was exhibited a parabolic growth to aging time. The result of EDS, it is supposed that the soldered interfacial zone was composed of $Cu_6Sn_5$.