• Proceedings of the KWS Conference
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• 2009.11a
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• pp.81-81
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• 2009

최근 휴대폰, 노트북 등과 같은 소형 멀티미디어 기기의 사용이 증가함에 따라 전자 패키징 산업은 경박단소화를 요구하고 있습니다. 더불어 전기적 신호의 손실을 줄이기 위해 전기, 전자산업체에서는 가볍고 굴곡성이 우수한 연성인쇄회로기판(Flexible Printed Circuit Board, FPCB)과 가격이 싸고 신뢰성이 입증된 경성인쇄회로기판(Rigid Printed Circuit Board, RPCB)의 전극간 접합에 많은 관심을 보이고 있습니다. 기존에 연성인쇄회로기판과 경성인쇄회로기판을 접합하는 방식으로는 connector를 이용한 체결법이 사용되고 있지만 완성품의 부피가 커지고 자동화 공정이 힘들며 I/O 개수가 제한적이어서 신호전달에 취약한 단점이 있습니다. 또한, 최근 FPCB를 RPCB에 접합하는데 interconnection으로 이방성 도전 필름(Anisotropic conductive film, ACF) 또는 비전도성 필름(Non-conductive film)이 널리 사용되고 있습니다. 하지만 필름의 가격이 비싸고, 낮은 전기 전도도를 보이며, 신뢰성 특성이 낮다는 단점을 가지고 있습니다. 본 실험에서는 기존의 connector 방식과 접착 필름을 이용한 방식을 대체하기 위하여 솔더를 interlayer로 이용하여 열과 압력으로 접합하는 방법에 대하여 연구하였습니다. 실험에 사용된 솔더의 조성은 Sn-3.0Ag-0.5Cu (in wt%)이고, RPCB와 FPCB의 표면처리는 ENIG로 하였습니다. 접합 온도와 접합 시간에 따라 최적의 접합 조건을 도출하고자 하였고, 접합된 시편을 가지고 신뢰성 테스트를 진행하였습니다. $85^{\circ}C$/85% 고온고습 시험과 고온 방치 시험을 통하여 접합부의 신뢰성을 테스트 하였고, 90도 Peel test로 기계적 접합 강도를 측정하였고, 파괴 단면을 Scanning Electron Microscopy (SEM), Energy-dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS)로 분석하였습니다.

• Journal of Welding and Joining
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• v.23 no.4
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• pp.34-40
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• 2005

There have been numerous approaches to examine the bonding strengths of solder joints. However, despite the technical and practical limitations, the precedent test methods such as the ball shear and ball pull tests are being used in industrial applications. In this study, the optimum jaw pressure with the modified protrusion jaw was introduced in order to obtain higher successful rate f3r ball pull testing. Furthermore, the pull strengths and fracture modes of Sn-8Zn-3Bi, Sn-4Ag-0.7Cu, and Sn-37Pb eutectic solder after isothermal aging tests ($100^{\circ}C,\;150^{\circ}C$), were evaluated with the protrusion jaw. The pull strength-displacement hysteresis curves and fracture surfaces were carefully investigated to evaluate the correlation between the pull strengths and the fracture modes of each solder. In conclusion, it is verified that Au-Zn IMCs (Intermetallic Compounds) have a detrimental effect on the pull strengths and changed fracture modes of Sn-8Zn-3Bi solder. Meanwhile, the microstructure transformation influences the degradation of pull strengths of Sn-4Ag-0.7Cu and Sn-37Pb solders.

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.1035-1040
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• 2010

The research efforts on GaN-based light-emitting diodes (LEDs) keep increasing due to their significant impact on the illumination industry. Surface mount technology (SMT) is widely used to mount the LED packages for practical application. In surface mount soldering both the device body and leads are intentionally heated by a reflow process. We studied on the effects of multiple reflows on microstructural variation and joint strength of the solder joints between the LED package and the substrate. In this study, Pb-free Sn-3.0Ag-0.5Cu solder and a finished pad with organic solderability preservatives (OSP) were employed. A $Cu_6Sn_5$ intermetallic compound (IMC) layer was formed during the multiple reflows, and the thickness of the IMC layerincreased with an increasing number of reflows. The shear force decreased after three reflows. From the observation of the fracture surface after a shear test, partially brittle fractures were observed after five reflows.

• Journal of Welding and Joining
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• v.23 no.3
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• pp.61-67
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• 2005

Since lead (Pb)-free solders for electronics have higher melting points than that of eutectic Sn-Pb solder, they need higher soldering temperatures. In order to decrease the soldering temperature we tried to coat Sn-Bi layer on $Sn-3.5\%Ag$ solder by electroplating, which applies the mechanism of transient liquid phase bonding to soldering. During heating Bi will diffuse into the $Sn-3.5\%Ag$ solder and this results in decreasing soldering temperature. As bonding samples, the 1608 capacitor electroplated with Sn, and PCB, its surface was finished with electroless-plated Ni/Au, were selected. The $Sn-95.7\%Bi$ coated Sn-3.5Ag was supplied as a solder between the capacitor and PCB land. The samples were reflowed at $220^{\circ}C$, which was lower than that of normal reflow temperature, $240\~250^{\circ}C$, for the Pb-free. As experimental result, the joint of $Sn-95.7\%Bi$ coated Sn-3.5Ag showed high shear strength. In the as-reflowed state, the shear strength of the coated solder showed 58.8N, whereas those of commercial ones were 37.2N (Sn-37Pb), 31.4N (Sn-3Ag-0.5Cu), and 40.2N (Sn-8Zn-3Bi). After thermal shock of 1000 cycles between $-40^{\circ}C$ and $+125^{\circ}C$, shear strength of the coated solder showed 56.8N, whereas the previous commercial solders were in the range of 32.3N and 45.1N. As the microstructures, in the solder $Ag_3Sn$ intermetallic compound (IMC), and along the bonded interface $Ni_3Sn_4$ IMC were observed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.34-42
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• 2000

Recently, there is a growing need to develope small-size RF chip inductors operating to GHz to realize high-performance, micro-fabricated wireless communication products. For the development of high-performance RF chip inductors, however, the ferrite-based chip inductors can not be used above 300MHz due to the limitation of the permeability of this material. In this work, small-size, high-performance RF chip inductors utilizing amorphous $Al_2O_3$ core material were investigated. Copper (Cu) with 40${\mu}m$ diameter was used as the coils and the chip inductor size fabricated in this work is $2.1mm{\times}1.5mm{\times}1.0mm$. The external current source was applied after bonding Cu coil leads to gold pads electro-plated on the bottom edges of a core material. The composition of core materials was measured using a EDX. High frequency characteristics of the inductance (L), quality factor (Q), and impedance (Z) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The developed inductors have the self-resonant frequency (SRF) of 1 to 3.5 GHz and exhibit L of 22 to 150 nH. The L of the inductors decreases with increasing the SRF. The Z of the inductors has the maximum value at the SRF and the inductors have the quality factor of 70 to 97 in the frequency range of 500 MHz to 1.5 GHz.

• Journal of Conservation Science
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• v.28 no.2
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• pp.175-184
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• 2012

A purpose of this research is to find out characteristic of bronze artifacts and gold ornaments excavated from Xiongnu tombs No. 2~4 at Duurlig Nars in Mongolia through scientific analysis of them. The Tombs are comparatively small. There were still lots of relics remaining although the tombs had been already robbed. Also the tombs are evaluated important since the origin of them show coexisting of chinese and northern style. First of all, an analysis result about bronze vessels found in this site, they have high lead(Pb) content and relatively low tin(Sn) content, as compared with the Bronze Han Mirror and End-fittings of Bronze Parasol Rib. Especially in case of bronze tray and bronze lamp from the no. 2 tomb and also bronze cauldron from the no. 4 tomb contain only 1wt% of tin which means binary alloy composition(Cu-Pb). Also, in the case of gold ornaments found in the no. 2 tomb, they have comparatively high purity. And the research suppose that the high possibility of that they were used soldering using alloy of Au-Cu or diffused bonding(using malachite and copper oxide) for joining gold grains of gold granulation ornament. Further scientific research and analysis in Mongolia and other countries will provide more clues to solve mystery of Xiongnu culture.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.431-432
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• 2012

In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.2 s.31
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• pp.23-28
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• 2004

We utilized Ag capping layer for fluxless bonding. To investigate the effect of Ag capping layer, two sets of sample were used. One set was bare In and Sn solders. The other set was In and Sn solders with Ag capping layer. In ($10{\mu}m$) and Sn ($10{\mu}m$) solders were deposited on Cu/Ti/Si substrate using thermal-evaporation, and Ag ($0.1{\mu}m$) capping layers were deposited on In and Sn solders. Solder joints were made by joining two In and Sn deposited specimens at $130^{\circ}C$ for 30 s under 0.8, 1.6, 3.2 MPa using thermal compression bonder. The contact resistance was measured using four-point probe method. The shear strength of the solder joints was measured by the shear test of cross-bar sample in the direction. The microstructure of the solder joints was characterized with SEM and EDS. In and Sn solders without Ag capping layers were only bonded at $130^{\circ}C$ under high bonding pressure. Also the shear strength of the In-Sn solder joints under was lower than that of the Ag/In-Ag/Sn solder joints. The resistance of the solder joints was $2-4\;m{\Omega}$ The solder joints consisted of In-rich phase and Sn-rich phase and the intermixed compounds were found at the interface. As bonding pressure increased, the intermixed compounds formed more.

• Bulletin of the Korean Chemical Society
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• v.33 no.8
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• pp.2603-2608
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• 2012

A novel mononuclear supramolecule of copper(II) has been synthesized with Ippyt ligand (Ippyt=3-(4'-imidazole phenyl)-5-(pyrid-2''-yl)-1,2,4-triazole) (1). Compound 1, namely [$Cu(Ippyt)_2(H_2O)_2$], has been characterized by single-crystal X-ray diffraction, IR spectrum, elemental analysis and thermogravimetric analysis. Structure determination reveals that the elongated-octahedral geometry is formed in the vicinity of the copper (II) atom being coordinated by four nitrogen atoms from two Ippyt ligands occupying the equatorial position and two oxygen atoms from two coordinated water molecules in the axial position, which together form the $N_4O_2$ donor set. Hydrogen bonding interactions between nitrogen and oxygen atoms result in the set up of a supramolecular network architecture. Biological properties including antibacterial activity and superoxide dismutase (SOD) mimetic activity of compound 1 have been investigated by agar diffusion method and the modified Marklund method, respectively. The results indicate that compound 1 exhibits a stronger antibacterial efficiency than the parent ligand and it also has a certain radical-scavenging activity.

• Journal of Surface Science and Engineering
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• v.48 no.6
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• pp.260-268
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• 2015

The thermal barrier coating (TBC) for inner wall of liquid-fuel rocket combustor consists of NiCrAlY as bonding layer and $ZrO_2$ as a top layer. In most case, the plasma spray coating is used for TBC process and this process has inherent possibility of cracking due to large difference in thermal expansion coefficients among bonding layer, top layer and metal substrate. In this paper, we suggest crack-free TBC process by using a precise electrodeposition technique. Electrodeposited Ni-P/Cr double layer has similar thermal expansion coefficient to the Cu alloy substrate resulting in superior thermal barrier performance and high temperature oxidation resistance. We studied the effects of phosphorous concentrations (2.12 wt%, 6.97 wt%, and 10.53 wt%) on the annealing behavior ($750^{\circ}C$) of Ni-P samples and Cr double layered electrodeposits. Annealing temperature was simulated by combustion test condition. Also, we conducted SEM/EDS and XRD analysis for Ni-P/Cr samples. The results showed that the band layers between Ni-P and Cr are Ni and Cr, and has no formed with heat treatment. These band layers were solid solution of Cr and Ni which is formed by interdiffusion of both alloy elements. In addition, the P was not found in it. The thickness of band layer was increased with increasing annealing time. We expected that the band layer can improve the adhesion between Cr and Ni-P.