• Title/Summary/Keyword: Cu-Cu Bonding

Search Result 333, Processing Time 0.028 seconds

Joining of AIN Ceramics to Metals: Effect of Reactions and Microstructural Developments in the Bonded Interface on the Joint Strength (질화알루미늄과 금속간 계면접합에 관한 연구: 계면반응과 미세구조 형성이 접합체 강도에 미치는 영향)

  • 박성계
    • Journal of Powder Materials
    • /
    • v.4 no.3
    • /
    • pp.196-204
    • /
    • 1997
  • Joining of AIN ceramics to W and Cu by active-metal brazing method was tried with use of (Ag-Cu)-Ti alloy as insert-metal. Joints were produced under various conditions of temperature, holding time and Ti-content in (Ag-Cu) alloy Reaction and microstructural development in bonded interface were investigated through observation and analysis by SEM/EDS, EPMA and XRD. Joint strengths were measured by shear test. Bonded interface consists of two layers: an insert-metal layer of eutectic Ag- and Cu-rich phases and a reaction layer of TiN. Thickness of reaction layer increases with bonding temperature, holding time and Ti-content of insert-metal. It was confirmed that the growth of reaction layer is a diffusion-controlled process. Activation energy for this process was 260 KJ/mol which is lower than that for N diffusion in TiN. Maximum shear strength of 108 MPa and 72 MPa were obtained for AIN/W and AIN/Cu joints, respectively. Relationship between processing variables, joint strength and thickness of reaction layer was also explained.

  • PDF

Research of Diffusion Bonding of Tungsten/Copper and Their Properties under High Heat Flux

  • Li, Jun;Yang, Jianfeng
    • Proceedings of the Materials Research Society of Korea Conference
    • /
    • 2011.05a
    • /
    • pp.14-14
    • /
    • 2011
  • W (tungsten)-alloys will be the most promising plasma facing armor materials in highly loaded plasma interactive components of the next step fusion reactors due to its high melting point, high sputtering resistance and low deuterium/tritium retention. The bonding technology of tungsten to Cu alloy was one of the key issues. In this paper, W/CuCrZr diffusion bonding has been performed successfully by inserting pure metal interlay. The joint microstructure, interfacial elements migration and phase composition were analyzed by SEM, EDS, XRD, and the joint shear strength and micro-hardness were investigated. The mock-ups were fabricated successfully with diffusion bonding and the cladding technology respectively, and the high heat flux test and thermal fatigue test were carried out under actively cooling condition. When Ni foil was used for the bonding of tungsten to CuCrZr, two reaction layers, Ni4W and Ni(W) layer, appeared between the tungsten and Ni interlayer with the optimized condition. Even though Ni4W is hard and brittle, and the strength of the joint was oppositely increased (217 MPa) due primarily to extremely small thicknesses (2~3 ${\mu}m$). When Ti foil was selected as the interlayer, the Ti foil diffused quickly with Cu and was transformed into liquid phase at $1,000^{\circ}C$. Almost all of the liquid was extruded out of the interface zone under bonding pressure, and an extremely thin residual layer (1~2 ${\mu}m$) of the liquid phase was retained between the tungsten and CuCrZr, which shear strength exceeded 160 MPa. When Ni/Ti/Ni multiple interlayers were used for bonding of tungsten to CuCrZr, a large number of intermetallic compound ($Ni_4W/NiTi_2/NiTi/Ni_3T$) were formed for the interdiffusion among W, Ni and Ti. Therefore, the shear strength of the joint was low and just about 85 MPa. The residual stresses in the clad samples with flat, arc, rectangle and trapezoid interface were estimated by Finite Element Analysis. The simulation results show that the flat clad sample was subjected maximum residual stress at the edge of the interface, which could be cracked at the edge and propagated along the interface. As for the rectangle and trapezoid interface, the residual stresses of the interface were lower than that of the flat interface, and the interface of the arc clad sample have lowest residual stress and all of the residual stress with arc interface were divided into different grooved zones, so the probabilities of cracking and propagation were lower than other interfaces. The residual stresses of the mock-ups under high heat flux of 10 $MW/m^2$ were estimated by Finite Element Analysis. The tungsten of the flat interfaces was subjected to tensile stresses (positive $S_x$), and the CuCrZr was subjected to compressive stresses (negative $S_x$). If the interface have a little microcrack, the tungsten of joint was more liable to propagate than the CuCrZr due to the brittle of the tungsten. However, when the flat interface was substituted by arc interfaces, the periodical residual stresses in the joining region were either released or formed a stress field prohibiting the growth or nucleation of the interfacial cracks. Thermal fatigue tests were performed on the mock-ups of flat and arc interface under the heat flux of 10 $MW/m^2$ with the cooling water velocity of 10 m/s. After thermal cycle experiments, a large number of microcracks appeared at the tungsten substrate due to large radial tensile stress on the flat mock-up. The defects would largely affect the heat transfer capability and the structure reliability of the mock-up. As for the arc mock-up, even though some microcracks were found at the interface of the regions, all microcracks with arc interface were divided into different arc-grooved zones, so the propagation of microcracks is difficult.

  • PDF

Effect of Solder Structure on the In-situ Intermetallic Compounds growth Characteristics of Cu/Sn-3.5Ag Microbump (Cu/Sn-3.5Ag 미세범프 구조에 따른 실시간 금속간화합물 성장거동 분석)

  • Lee, Byeong-Rok;Park, Jong-Myeong;Ko, Young-Ki;Lee, Chang-Woo;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.20 no.3
    • /
    • pp.45-51
    • /
    • 2013
  • Thermal annealing tests were performed in an in-situ scanning electron microscope chamber at $130^{\circ}C$, $150^{\circ}C$, and $170^{\circ}C$ in order to investigate the effects of solder structure on the growth kinetics of intermetallic compound (IMC) in Cu/Sn-3.5Ag microbump. Cu/Sn-3.5Ag($6{\mu}m$) microbump with spreading solder structure showed $Cu_6Sn_5$ and $Cu_3Sn$ phase growths and then IMC phase transition stages with increasing annealing time. By the way, Cu/Sn-3.5Ag($4{\mu}m$) microbump without solder spreading, remaining solder was transformed to $Cu_6Sn_5$ right after bonding and had only a phase transition of $Cu_6Sn_5$ to $Cu_3Sn$ during annealing. Measured activation energies for the growth of the $Cu_3Sn$ phase during the annealing were 0.80 and 0.71eV for Cu/Sn-3.5Ag($6{\mu}m$) and Cu/Sn-3.5Ag($4{\mu}m$), respectively.

Intermetallic Compound Growth Characteristics of Cu/Ni/Au/Sn-Ag/Cu Micro-bump for 3-D IC Packages (3차원 적층 패키지를 위한 Cu/Ni/Au/Sn-Ag/Cu 미세 범프 구조의 열처리에 따른 금속간 화합물 성장 거동 분석)

  • Kim, Jun-Beom;Kim, Sung-Hyuk;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.20 no.2
    • /
    • pp.59-64
    • /
    • 2013
  • In-situ annealing tests of Cu/Ni/Au/Sn-Ag/Cu micro-bump for 3D IC package were performed in an scanning electron microscope chamber at $135-170^{\circ}C$ in order to investigate the growth kinetics of intermetallic compound (IMC). The IMC growth behaviors of both $Cu_3Sn$ and $(Cu,Ni,Au)_6Sn_5$ follow linear relationship with the square root of the annealing time, which could be understood by the dominant diffusion mechanism. Two IMC phases with slightly different compositions, that is, $(Cu,Au^a)_6Sn_5$ and $(Cu,Au^b)_6Sn_5$ formed at Cu/solder interface after bonding and grew with increased annealing time. By the way, $Cu_3Sn$ and $(Cu,Au^b)_6Sn_5$ phases formed at the interfaces between $(Cu,Ni,Au)_6Sn_5$ and Ni/Sn, respectively, and both grew with increased annealing time. The activation energies for $Cu_3Sn$ and $(Cu,Ni,Au)_6Sn_5$ IMC growths during annealing were 0.69 and 0.84 eV, respectively, where Ni layer seems to serve as diffusion barrier for extensive Cu-Sn IMC formation which is expected to contribute to the improvement of electrical reliability of micro-bump.

Enhancement of phosphate removal using copper impregnated activated carbon(GAC-Cu) (Cu(II)를 이용하여 표면개질된 활성탄의 인산염 제거효율 향상)

  • Shin, Jeongwoo;Kang, Seoyeon;An, Byungryul
    • Journal of Korean Society of Water and Wastewater
    • /
    • v.35 no.6
    • /
    • pp.455-463
    • /
    • 2021
  • The adsorption process using GAC is one of the most secured methods to remove of phosphate from solution. This study was conducted by impregnating Cu(II) to GAC(GAC-Cu) to enhance phosphate adsorption for GAC. In the preparation of GAC-Cu, increasing the concentration of Cu(II) increased the phosphate uptake, confirming the effect of Cu(II) on phosphate uptake. A pH experiment was conducted at pH 4-8 to investigate the effect of the solution pH. Decrease of phosphate removal efficiency was found with increase of pH for both adsorbents, but the reduction rate of GAC-Cu slowed, indicating electrostatic interaction and coordinating bonding were simultaneously involved in phosphate removal. The adsorption was analyzed by Langmuir and Freundlich isotherm to determine the maximum phosphate uptake(qm) and adsorption mechanism. According to correlation of determination(R2), Freundlich isotherm model showed a better fit than Langmuir isotherm model. Based on the negative values of qm, Langmuir adsorption constant(b), and the value of 1/n, phosphate adsorption was shown to be unfavorable and favorable for GAC and GAC-Cu, respectively. The attempt of the linearization of each isotherm obtained very poor R2. Batch kinetic tests verified that ~30% and ~90 phosphate adsorptions were completed within 1h and 24 h, respectively. Pseudo second order(PSO) model showed more suitable than pseudo first order(PFO) because of higher R2. Regardless of type of kinetic model, GAC-Cu obtained higher constant of reaction(K) than GAC.

Influence of Flip Chip Bonding Conditions Using Anisotropic Conductive Adhesive(ACA) in the Fabrication of RFID Tag (RFID tag의 제작 공정에서 비등방 전도성 접착제를 사용한 flip chip bonding 조건의 영향)

  • Lee, Jun-Sik;Kim, Jeong-Han;Kim, Mok-Sun;Lee, Jong-Hyeon
    • Proceedings of the KWS Conference
    • /
    • 2007.11a
    • /
    • pp.223-226
    • /
    • 2007
  • 본 연구에서는 Ag anisotropic conductive adhesive(ACA)의 종류, 경화 조건 및 안테나 패턴의 재질에 따른 flip chip bonding된 RFID die의 접합부 신뢰성이 조사되었다. 접합강도 측정에 의하여 접합강도가 최적화되는 공정 시간을 결정할 수 있었으며, 그러한 최적의 공정조건에서는 paste-type Ag ink로 인쇄된 안테나 상에서의 RFID die의 접합강도가 Cu 재질 안테나에 비해 상대적으로 높게 측정됨을 알 수 있었다. RFID tag의 인식거리 측정 시험을 통하여 적절한 경화 조건이 적용된다면 안테나의 재질이 인식거리 변화에 가장 주요한 영향을 미치는 인자임을 알 수 있었다. 아울러 Cu 안테나 패턴은 RFID die의 접합 과정에서 곡률을 가지며 휘어지면서 인식거리와 관련된 long-tem reliability를 악화시킬 수 있음을 관찰할 수 있었다.

  • PDF

Insulated, Passivated and Adhesively-Promoted Bonding Wire using Al2O3 Nano Coating

  • Soojae Park;Eunmin Cho;Myoungsik Baek;Eulgi Min;Kyujung Choi
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.31 no.2
    • /
    • pp.1-8
    • /
    • 2024
  • Bonding wires are composed of conductive metals of Au, Ag & Cu with excellent electrical conductivities for transmitting power and signals to wafer chips. Wire metals do not provide electrical insulation, adhesion promoter and corrosion passivation. Adhesion between metal wires is extremely weak, which is responsible for wire cut failures during thermal cycling. Organic coating for electrical insulation does not satisfy bondability and manufacturability, and it is complex to apply very thin organic coating on metal wires. Automotive packages require enhanced reliability of packages under harsh conditions. LED and power packages are susceptible to wire cut failures. Contrary to conventional OCB behaviors, forming gas was not required for free air ball formation for both Ag and Pd-coated Cu wires with Al2O3 passivation.

Evaluation of Bonding Properties of Epoxy Solder Joints by High Temperature Aging Test (고온 시효 시험에 따른 Epoxy 솔더 접합부의 접합 특성 평가)

  • Kang, Min-Soo;Kim, Do-Seok;Shin, Young-Eui
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.32 no.1
    • /
    • pp.6-12
    • /
    • 2019
  • Bonding properties of epoxy-containing solder joints were investigated by a high temperature aging test. Specimens were prepared by bonding an R3216 standard chip resistor to an OSP-finished PCB by a reflow process with two basic types of solder (SAC305 & Sn58Bi) pastes and two epoxy-solder (SAC305+epoxy & Sn58Bi+epoxy) pastes. In all epoxy solder joints, an epoxy fillet was formed in the hardened epoxy, lying around the outer edge of the solder joint, between the chip and the Cu pad. In order to analyze the bonding characteristics of solder joints at high temperatures, a high-temperature aging test at $150^{\circ}C$ was carried out for 14 days (336 h). After aging, the intermetallic compound $Cu_6Sn_5$ was found to have formed in the solder joint on the Cu pad, and the shear stress on the conventional solder joint was reduced by a significant amount. The reason that the shear force did not decrease much, even though in epoxy solder, was thatbecause epoxy hardened at the outer edge of the supported solder joints. Using epoxy solder, strong bonding behavior can be ensured due to this resistance to shear force, even in metallurgical changes such as those where intermetallic compounds form at solder joints.

Numerical Analysis of Warpage Induced by Thermo-Compression Bonding Process of Cu Pillar Bump Flip Chip Package (수치해석을 이용한 구리기둥 범프 플립칩 패키지의 열압착 접합 공정 시 발생하는 휨 연구)

  • Kwon, Oh Young;Jung, Hoon Sun;Lee, Jung Hoon;Choa, Sung-Hoon
    • Transactions of the Korean Society of Mechanical Engineers A
    • /
    • v.41 no.6
    • /
    • pp.443-453
    • /
    • 2017
  • In flip chip technology, the conventional solder bump has been replaced with a copper (Cu) pillar bump owing to its higher input/output (I/O) density, finer pitch, and higher reliability. However, Cu pillar bump technology faces several issues, such as interconnect shorting and higher low-k stress due to stiffer Cu pillar structure when the conventional reflow process is used. Therefore, the thermal compression bonding (TCB) process has been adopted in the flip chip attachment process in order to reduce the package warpage and stress. In this study, we investigated the package warpage induced during the TCB process using a numerical analysis. The warpage of the TCB process was compared with that of the reflow process.

Monolithic 3D-IC 구현을 위한 In-Sn을 이용한 Low Temperature Eutectic Bonding 기술

  • Sim, Jae-U;Park, Jin-Hong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.02a
    • /
    • pp.338-338
    • /
    • 2013
  • Monolithic three-dimensional integrated circuits (3D-ICs) 구현 시 bonding 과정에서 발생되는 aluminum (Al) 이나 copper (Cu) 등의 interconnect metal의 확산, 열적 스트레스, 결함의 발생, 도펀트 재분포와 같은 문제들을 피하기 위해서는 저온 공정이 필수적이다. 지금까지는 polymer 기반의 bonding이나 Cu/Cu와 같은 metal 기반의 bonding 등과 같은 저온 bonding 방법이 연구되어 왔다. 그러나 이와 같은 bonding 공정들은 공정 시 void와 같은 문제가 발생하거나 공정을 위한 특수한 장비가 필수적이다. 반면, 두 물질의 합금을 이용해 녹는점을 낮추는 eutectic bonding 공정은 저온에서 공정이 가능할 뿐만 아니라 void의 발생 없이 강한 bonding 강도를 얻을 수 있다. Aluminum-germanium (Al-Ge) 및 aluminum-indium (Al-In) 등의 조합이 eutectic bonding에 이용되어 각각 $424^{\circ}C$$454^{\circ}C$의 저온 공정을 성취하였으나 여전히 $400^{\circ}C$이상의 eutectic 온도로 인해 3D-ICs의 구현 시에는 적용이 불가능하다. 이러한 metal 조합들에 비해 indium (In)과 tin (Sn)은 각각 $156^{\circ}C$$232^{\circ}C$로 굉장히 낮은 녹는점을 가지고 있기 때문에 In-Sn 조합은 약 $120^{\circ}C$ 정도의 상당히 낮은eutectic 온도를 갖는다. 따라서 본 연구팀은 In-Sn 조합을 이용하여 $200^{\circ}C$ 이하에서monolithic 3D-IC 구현 시 사용될 eutectic bonding 공정을 개발하였다. 100 nm SiO2가 증착된 Si wafer 위에 50 nm Ti 및 410 nm In을 증착하고, 다른Si wafer 위에 50 nm Ti 및 500 nm Sn을 증착하였다. Ti는 adhesion 향상 및 diffusion barrier 역할을 위해 증착되었다. In과 Sn의 두께는 binary phase diagram을 통해 In-Sn의 eutectic 온도인 $120^{\circ}C$ 지점의 조성 비율인 48 at% Sn과 52 at% In에 해당되는 410 nm (In) 그리고 500 nm (Sn)로 결정되었다. Bonding은 Tbon-100 장비를 이용하여 $140^{\circ}C$, $170^{\circ}C$ 그리고 $200^{\circ}C$에서 2,000 N의 압력으로 진행되었으며 각각의 샘플들은 scanning electron microscope (SEM)을 통해 확인된 후, 접합 강도 테스트를 진행하였다. 추가로 bonding 층의 In 및 Sn 분포를 확인하기 위하여 Si wafer 위에 Ti/In/Sn/Ti를 차례로 증착시킨 뒤 bonding 조건과 같은 온도에서 열처리하고secondary ion mass spectrometry (SIMS) profile 분석을 시행하였다. 결론적으로 본 연구를 통하여 충분히 높은 접합 강도를 갖는 In-Sn eutectic bonding 공정을 $140^{\circ}C$의 낮은 공정온도에서 성공적으로 개발하였다.

  • PDF