• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.17-21
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• 2008

The electroless plating of copper and tin were investigated for the fabrication of Sn-Cu bump. Copper and tin were electroless plated in series on $20{\mu}m$ diameter copper via to form approximately $10{\mu}m$ height bump. In electroless copper plating, acid cleaning and stabilizer addition promoted the selectivity of bath on the copper via. In electroless tin plating, the coating thickness of tin was less uniform relative to that of electroless copper, however the size of Sn-Cu bump were uniform after reflow process.

• Journal of Welding and Joining
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• v.31 no.3
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• pp.17-21
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• 2013

Sn whiskers are one of the serious causes of the failure of electronics. Sn whiskers grow spontaneously from Sn-based, lead-free finished surfaces, even at room temperature. A primary factor of these Sn whiskers growth is compressive stress, which enhances the diffusion of Sn or other elements. The sources of compressive stress are the growth of non-uniform large intermetallic compounds along the interface between the Sn grain boundary and Cu substrate. Recent studies revealed the methods for reducing Sn whisker growth. This paper gives an overview about recent researches for mitigation methods of Sn whisker growth during nearly room temperature storage.

• Journal of the Korean Ceramic Society
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• v.46 no.4
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• pp.429-435
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• 2009

In this study, we investigated microstructure and the CO gas sensing properties of Ag-CuO-$SnO_2$ thin films prepared by co-evaporation and subsequently thermal oxidation at air atmosphere. The sensitivity of a Cu-Sn films, thermally oxidized at $600^{\circ}C$, is strongly affected by the amount of Cu. At Cu:7 wt%-Sn:93 wt%, the film exhibited a maximum sensitivity of ${\sim}2.3$ to CO gas of 1000 ppm at $300^{\circ}C$. In contrast, the sensitivity of a Sn-Ag film did not change significantly with the amount of Ag. An enhanced sensitivity of ${\sim}3.7$ was observed in the film with a composition of Ag:3 wt%-Cu:4 wt%-Sn:93 wt%, when thermally oxidized at $600^{\circ}C$. In addition, this thin film shows a response time of ${\sim}80$ sec and a recovery time of ${\sim}450$ sec to 1000 ppm CO gas. The results demonstrate that the CO sensitivity of the Ag-CuO-$SnO_2$ thin films may be closely associated with coexistence of $SnO_2$ and SnO phase, decrease in average particle size, and a porous microstructure. We also suggest that co-evaporation and followed by thermal oxidation is a very simple and effective method to prepare oxide gas sensor thin films.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.64-72
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• 2023

In this study, after transferring graphene on a Cu substrate and printing a Sn-3.0Ag-0.5Cu Pb-free solder paste on the Cu substrate, effects of the transferred graphene on formations and growths of intermetallic compound (IMC) at the interface between the Cu substrate and the solder were reported during processes of reflow soldering and isothermal aging for 1000 h with various temperatures (125, 150, and 175 ℃). Thicknesses of Cu₆Sn₅ and Cu₃Sn IMCs at the interfaces with graphene were decreased during the reflow soldering and isothermal aging processes compared to those without graphene. The transferred graphene layers also showed that the growth rate constant and square of growth rate constant which related to the growth mechanisms of Cu₆Sn₅ and Cu₃Sn IMCs with t he t emperature a nd t ime of t he i sothermal aging c ould dramatically decreased.

• Transactions on Electrical and Electronic Materials
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• v.10 no.4
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• pp.135-139
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• 2009

$H_2S$ micro-gas sensors have been developed employing $SnO_2$:CuO composite thin films. The films were prepared by e-beam evaporation of Sn and Cu metals on silicon substrates, followed by oxidation at high temperatures. Results of various studies, such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) reveal that $SnO_2$ and CuO are mutually non-reactive. The CuO grains, which in turn reside in the inter-granular regions of $SnO_2$, inhibit grain growth of $SnO_2$ as well as forming a network of p-n junctions. The film showed more than a 90% relative resistance change when exposed to $H_2S$ gas at 1 ppm in air at an operating temperature of $350^{\circ}C$ and had a short response time of 8 sec.

• Journal of Electrochemical Science and Technology
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• v.11 no.1
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• pp.92-98
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• 2020

SnO₂-based high-capacity anode materials are attractive candidate for the next-generation high-performance lithium-ion batteries since the theoretical capacity of SnO₂ can be ideally extended from 781 to 1494 mAh g^-1. Here 3D etched Cu foam is applied as a current collector for electron path and simultaneously a substrate for the SnO₂ coating, for developing an integrated electrode structure. We fabricate the 3D etched Cu foam through an auto-catalytic electroless plating method, and then coat the SnO₂ onto the self-supporting substrate through a simple sol-gel method. The catalytic dissolution of Cu metal makes secondary pores of both several micrometers and several tens of micrometers at the surface of Cu foam strut, besides main channel-like interconnected pores. Especially, the additional surface pores on etched Cu foam are intended for penetrating the individual strut of Cu foam, and thereby increasing the surface area for SnO₂ coating by using even the internal of Cu foam. The increased areal capacity with high structural integrity upon cycling is demonstrated in the SnO₂-coated 3D etched Cu foam. This study not only prepares the etched Cu foam using the spontaneous chemical reactions but also demonstrates the potential for electroless plating method about surface modification on various metal substrates.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.13-17
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• 2009

A semi-empirical method to estimate the surface tension of molten alloys at different oxygen partial pressures is suggested in this study. The surface tension of molten Ag-Sn and Ag-Cu alloys were calculated using the Butler equation with the surface tension value of pure substance at a given oxygen partial pressure. The oxygen partial pressure ranges were $2.86{\times}10^{-12}$－$1.24{\times}10^{-9}$ Pa for the Ag-Sn system and $2.27{\times}10^{-11}$－$5.68{\times}10^{-4}$ Pa for the Ag-Cu system. In this calculation, the interactions of the adsorbed oxygen with other metallic constituents were ignored. The calculated results of the Ag-Sn alloys were in reasonable accordance with the experimental data within a difference of 8%. For the Ag-Cu alloy system at a higher oxygen partial pressure, the surface tension initially decreased but showed a minimum at $X_{Ag}$ = 0.05 to increase as the silver content increased. This behavior appears to be related to the oxygen adsorption and the corresponding surface segregation of the constituent with a lower surface tension. Nevertheless, the calculated results of the Ag-Cu alloys with the present model were in good agreement with the experimental data within a difference of 10%.

• Journal of Environmental Science International
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• v.14 no.7
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• pp.669-674
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• 2005

Catalytic combustion of toluene was investigated on $CuOx/SnO_2-ZrO_2\;CuOx/SnO_2\;CuOx/ZrO_2$ catalysts prepared by impregnation. Characteristics of catalysts loaded on binary support and single support were observed by TPR, TPO, XRD, XPS techniques. The results on catalytic combustion showed that binary supports improve the activity of copper in the combustion of toluene. The reason for high catalytic activity on toluene combustion of $CuOx/SnO_2-ZrO_2$ catalyst was ascribed to oxidation$\cdot$reduction activity at low temperatures and stability of oxidation state after reduction.

• Journal of Surface Science and Engineering
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• v.57 no.3
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• pp.192-200
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• 2024

Cu as a heat exchanger tube is an important component in thermal fluid transfer. However, Cu tubes are exposed to stress in certain environments, leading to stress corrosion cracking (SCC). In this study, the effect of Sn addition on microstructure and corrosion characteristics was examined. The microstructural examination revealed the presence of columnar crystal and a grain refinement due to the addition of Sn. Electrochemical measurements showed that the 5 wt.% NH₃ environment was the most vulnerable environment to Cu corrosion, and the corrosion current density increased as stress increased. The immersion test exhibited the formation of Cu2O and Cu(OH)₂ corrosion product in 3.5 wt.% NaCl and 5 wt.% NH₃ environments, respectively. Results indicated that Sn addition to Cu was an important factor in improving the mechanical strength.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.307-313
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• 2005

Electromigration behavior in the Sn96.5Ag3.0Cu0.5 solder lines was investigated and compared Sn96.5Ag3.0Cu0.5 with eutectic SnPb. Measurements were made for relevant parameters for electromigration of the solder, such as drift velocity, threshold current density, activation energy, as well as the product of diffusivity and effective charge number (DZ$\ast$). The threshold current density were measured to be $2.38{\times}10^4A/cm^2$ at $140^{\circ}C$ and the value represented the maximum current density which the SnAgCu solder can carry without electromigration damage at the stressing temperatures. The electromigration energy was measured to 0.56 eV in the temperature range of $110-160^{\circ}C$. The measured products of diffusivity and the effective charge number, DZ$\ast$ were $3.12{\times}10^{-10} cm^2/s$ at $110^{\circ}C$, $4.66{\times}10^{-10} cm^2/s$ at $125^{\circ}C$, $8.76{\times}10^{-10} cm^2/s$ at $140^{\circ}C$, $2.14{\times}10^{-9}cm^2/s$ at $160^{\circ}C$ SnPb solder existed incubation stage, while SnAgCu did not have incubation stage. It was thought that the diffusion mechanism of SnAgCu was different from that of SnPb.