• Title/Summary/Keyword: Cu-10Sn

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Formation of Sn-Cu Solder Bump by Electroplating for Flip Chip (플립칩용 Sn-Cu 전해도금 솔더 범프의 형성 연구)

  • 정석원;강경인;정재필;주운홍
    • Journal of the Microelectronics and Packaging Society
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    • v.10 no.4
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    • pp.39-46
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    • 2003
  • Sn-Cu eutectic solder bump was fabricated by electroplating for flip chip and its characteristics were studied. A Si-wafer was used as a substrate and the UBM(Under Bump Metallization) of Al(400 nm)/Cu(300 nm)/Ni(400 nm)/Au(20 nm) was coated sequentially from the substrate to the top by an electron beam evaporator. The experimental results showed that the plating ratio of the Sn-Cu increased from 0.25 to 2.7 $\mu\textrm{m}$/min with the current density of 1 to 8 A/d$\m^2$. In this range of current density the plated Sn-Cu maintains its composition nearly constant level as Sn-0.9∼1.4 wt%/Cu. The solder bump of typical mushroom shape with its stem diameter of 120 $\mu\textrm{m}$ was formed through plating at 5 A/d$\m^2$ for 2 hrs. The mushroom bump changed its shape to the spherical type of 140 $\mu\textrm{m}$ diameter by air reflow at $260^{\circ}C$. The homogeneity of chemical composition for the solder bump was examined, and Sn content in the mushroom bump appears to be uneven. However, the Sn distributed more uniformly through an air reflow.

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A Study on the Thermal Oxidation and Wettability of Lead-free Solders of Sn-Ag-Cu and Sn-Ag-Cu-In

  • Lee, Hyunbok;Cho, Sang Wan
    • Applied Science and Convergence Technology
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    • v.23 no.6
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    • pp.345-350
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    • 2014
  • The surface oxidation mechanism of lead-free solder alloys has been investigated with multiple reflow using X-ray photoelectron spectroscopy. It was found that the solder surface of Sn-Ag-Cu-In solder alloy is surrounded by a thin $InO_x$ layer after reflow process; this coating protects the metallic surface from thermal oxidation. Based on this result, we have performed a wetting balance test at various temperatures. The Sn-Ag-Cu-In solder alloy shows characteristics of both thermal oxidation and wetting balance better than those of Sn-Ag-Cu solder alloy. Therefore, Sn-Ag-Cu-In solder alloy is a good candidate to solve the two problems of easy oxidation and low wettability, which are the most critical problems of Pb-free solders.

Synthesis of Porous Cu-Sn by Freeze Drying and Hydrogen Reduction Treatment of Metal Oxide Composite Powders (금속산화물 복합분말의 동결건조 및 수소분위기 환원처리에 의한 Cu-Sn 다공체 제조)

  • Kim, Min-Sung;Yoo, Ho-Suk;Oh, Sung-Tag;Hyun, Chang-Yong
    • Korean Journal of Materials Research
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    • v.23 no.12
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    • pp.722-726
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    • 2013
  • Freeze drying of a porous Cu-Sn alloy with unidirectionally aligned pore channels was accomplished by using a composite powder of CuO-$SnO_2$ and camphene. Camphene slurries with CuO-$SnO_2$ content of 3, 5 and 10 vol% were prepared by mixing with a small amount of dispersant at $50^{\circ}C$. Freezing of a slurry was done at $-25^{\circ}C$ while the growth direction of the camphene was unidirectionally controlled. Pores were generated subsequently by sublimation of the camphene during drying in air for 48 h. The green bodies were hydrogen-reduced at $650^{\circ}C$ and then were sintered at $650^{\circ}C$ and $750^{\circ}C$ for 1 h. XRD analysis revealed that the CuO-$SnO_2$ powder was completely converted to Cu-Sn alloy without any reaction phases. The sintered samples showed large pores with an average size of above $100{\mu}m$ which were aligned parallel to the camphene growth direction. Also, the internal walls of the large pores had relatively small pores. The size of the large pores decreased with increasing CuO-$SnO_2$ content due to the change of the degree of powder rearrangement in the slurry. The size of the small pores decreased with increase of the sintering temperature from $650^{\circ}C$ to $750^{\circ}C$, while that of the large pores was unchanged. These results suggest that a porous alloy body with aligned large pores can be fabricated by a freeze-drying and hydrogen reduction process using oxide powders.

Improved drop impact reliability of Sn-Ag-Cu solder joint using Cu-Zn solder wetting layer (Cu-Zn 합금 젖음층을 이용한 Sn-Ag-Cu 솔더 접합부의 낙하 충격 신뢰성 향상 연구)

  • Kim, Yeong-Min;Kim, Yeong-Ho
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.35.2-35.2
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    • 2009
  • 최근 본 연구실에서 무연 솔더를 위한 새로운 Cu-Zn 합금 젖음층을 개발하였다. 전해도금을 통하여 Cu-Zn 합금층을 형성한 뒤 그 위에 Sn-4.0wt% Ag-0.5wt% Cu (SAC 405) 솔더를 리플로 솔더링을 통해 솔더접합부를 형성하였으며 계면에서 생성된 금속간 화합물의 형성 및 성장 거동을 연구하였다. SAC/Cu 시스템의 경우, $150^{\circ}C$에서 시효 처리를 실시하는 동안 솔더와 도금된 Cu 계면에서 $Cu_6Sn_5$ 상과 미세한 공공이 형성된 $Cu_3Sn$ 상이 발견되었다. 반면에 SAC/Cu-Zn 시스템에서는 계면에서 $Cu_6Sn_5$ 상만이 형성되었다. 또한 큰 판상형의 $Ag_3Sn$ 상이 SAC/Cu 시스템에 비해 현저하게 억제되었다. SAC/Cu-Zn 계면에서의 금속간 화합물의 성장 속도가 SAC/Cu 계면에서 형성된 금속간 화합물의 성장 속도보다 느리게 나타났다. Cu-Zn 젖음층의 Zn가 솔더와 Cu-Zn 층 사이에서 Cu와 Sn 원자의 상호 확산을 방해하기 때문이다. 본 연구에서는 Cu와 Cu-Zn 층을 이용한 솔더 접합부의 낙하 충격 신뢰성을 연구하였다. 낙하 충격 시험 시편은 두 개의 인쇄 회로 기판을 SAC 405 솔더볼을 이용하여 리플로를 통해 상호연결 하여 제조되었다. 이 때, 각각의 인쇄 회로 기판의 패드에는 Cu 층과 Cu-Zn층을 전해도금을 통하여 각각 $10{\mu}m$두께의 젖음층을 형성하였다. 낙하 시험 시편을 제조한 뒤, 시효 처리에 대한 낙하 저항 신뢰성의 특성을 연구하기 위해 250, 500 시간동안 시효처리를 한 후 각 조건에서 계면에 형성된 금속간 화합물의 성장 거동을 관찰하였으며, 낙하 충격 시험을 실시하였다. 낙하 시험은 daisy chain으로 연결된 시편의 저항이 100 Ohm 이상 측정되었을 때 중단되도록 하였다. Cu-Zn/SAC/Cu-Zn 시편의 경우 초기 리플로를 하였을 때 불량이 발생하는 평균 낙하 수는 350이며, Cu/SAC/Cu 시편의 평균 낙하수는 200 미만으로 나타났다. Cu/SAC/Cu 시편의 경우, 시효처리 시간이 증가함에 따라 평균 낙하수는 큰 폭으로 감소하였지만, Cu-Zn/SAC/Cu-Zn 시편은 불량이 발생하는 평균 낙하수의 감소폭이 보다 완만하게 나타났다. Cu 층에 Zn를 첨가함으로써 솔더와 젖음층 사이에서 형성된 금속간 화합물의 성장 및 미세 공공의 형성이 억제되었고, 솔더 접합부의 과냉을 감소시킴으로써 큰 판상형의 $Ag_3Sn$ 상의 형성을 억제함으로써 Cu-Zn/SAC/Cu-Zn 솔더 접합부에서 Cu/SAC/Cu 솔더 접합부보다 낙하 충격에 대한 저항성 및 신뢰성이 향상되었다. 이는 무연 솔더에 Zn를 첨가하여 낙하 충격 신뢰성을 향상시킨 것과 동일한 효과를 나타냈음을 확인하였다. 본 연구는 한국 과학 기술 재단의 전자패키지 재료 연구 센터(CEPM)와 지식 경제부의 부품 소재 기술 개발 사업의 지원을 받아 수행되었습니다.

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Characteristics of SnO2 Thick Film Gas Sensors Doped with Catalyst (촉매가 첨가된 SnO2 후막형 가스센서의 특성 연구)

  • Lee, Don-Kyu;Yu, Yoon-Sick;Lee, Ji-Young;Yu, Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.8
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    • pp.622-626
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    • 2010
  • Cu doped $SnO_2$ thick films for gas sensors were fabricated by screen printing method on alumina substrates and annealed at $500^{\circ}C$ in air, respectively. Structural properties of $SnO_2$ by X-ray diffraction showed (110), (101) and (211) dominant tetragonal phase. The effects of catalyst Cu in $SnO_2$-based gas sensors were investigated. Sensitivity of $SnO_2$:Cu sensors to 2,000 ppm $CO_2$ gas and 50 ppm $H_2S$ gas was investigated for various Cu concentration. The highest sensitivity to $CO_2$ gas and $H_2S$ gas of Cu doped $SnO_2$ gas sensors was observed at the 8 wt% and 12 wt% Cu concentration, respectively. The improved sensitivity in the Cu doped $SnO_2$ gas sensors was explained by decrease of electron depletion region in Cu and $SnO_2$ junction, and increase of reactive oxygen and surface area in the $SnO_2$.

The synthesis and properties of point defect structure of Cu2-XZnSnS4 (x=0.1, 0.2, and 0.3)

  • Bui D. Long;Le T. Bang
    • Advances in materials Research
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    • v.13 no.1
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    • pp.55-62
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    • 2024
  • Cu-based sulfides have recently emerged as promising thermoelectric (TE) materials due to their low cost, non-toxicity, and abundance. In this research, point defect structure of Cu2-xZnSnS4 (x=0.1, 0.2, 0.3) samples were synthesized by the mechanical alloying method. Mixed powders of Cu, Zn, Sn and S were milled using high energy ball milling at a rotation speed of 300 rpm in Ar atmosphere. The milled Cu2-xZnSnS4 powders were heat-treated at 723 K for 24 h, and subsequently consolidated using spark plasma sintering (SPS) under an applied pressure of 60 MPa for 15 min. The thermal conductivity of the sintered Cu2-xZnSnS4 samples was evaluated. A well-defined Cu2-xZnSnS4 powders were successfully formed after milling for 16 h, with the particle sizes mostly distributed in the range of 60-100 nm. The lattice constants of aand cdecreased with increasing composition value x. The thermal conductivity of sintered x=0.1 sample exhibited the lowest value and attained 0.93 W/m K at 673 K.

Characteristics of CuO doped WO3-SnO2 Thick Film Gas Sensors (CuO가 첨가된 WO3-SnO2 후막 가스센서 특성 연구)

  • Lee, Don-Kyu;Shin, Deuck-Jin;Yu, Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.12
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    • pp.956-960
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    • 2010
  • CuO doped $WO_3-SnO_2$ thick film gas sensors were fabricated by screen printing method on alumina substrates and heat-treated at $350^{\circ}C$ in air. The effects of mixing ratio of $WO_3$ with $SnO_2$ on the structural and morphological properties of $WO_3-SnO_2$ were investigated X-ray diffraction and Scanning Electron Microscope. The structural properties of the $WO_3-SnO_2$:CuO thick film by XRD showed that the monoclinic of $WO_3$ and the tetragonal of $SnO_2$ phase were mixed. Nano CuO was coated on the $WO_3-SnO_2$ surface and then the surface of $WO_3$ was coated with $SnO_2$ particles with $1\sim1.5{\mu}m$ in diameters, as confirmed form the SEM image. The sensitivity of the $WO_3-SnO_2$:CuO sensor to 2000 ppm $CO_2$ gas and 50 ppm $H_2S$ gas for the various ratio of $WO_3$ and $SnO_2$ was investigated. The 4 wt% CuO doped $WO_3-SnO_2$(75:25) tkick films showed the highest sensitivity to $CO_2$ gas and $H_2S$ gas.

Syntheses of Cu2SnSe3 and Their Transformation into Cu2ZnSnSe4 Nanoparticles with Tunable Band Gap under Multibubble Sonoluminescence Conditions

  • Park, Jongpil;Lee, Won Young;Hwang, Cha Hwan;Kim, Hanggeun;Kim, Youngkwon;Shim, Il-Wun
    • Bulletin of the Korean Chemical Society
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    • v.35 no.8
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    • pp.2331-2334
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    • 2014
  • $Cu_2SnSe_3$ (CTSe) and $Cu_2ZnSnSe_4$ (CZTSe) nanoparticles were synthesized by sonochemical reactions under multibubble sonoluminescence (MBSL) conditions. First, $Cu_2SnSe_3$ nanoparticles were synthesized by the sonochemical method with an 85% yield, using CuCl, $SnCl_2$, and Se. Second, ZnSe was coated on the CTSe nanoparticles by the same method. Then, they were transformed into CZTSe nanoparticles of 5-7 nm diameters by heating them at $500^{\circ}C$ for 1 h. The ratios between Zn and Sn could be controlled from 1 to 3.75 by adjusting the relative concentrations of CTSe and ZnSe. With relatively lower Zn:Sn ratios (0.75-1.26), there are mostly CZTSe nanoparticles but they are believed to include very small amount of CTS and ZnSe particles. The prepared nanoparticles show different band gaps from 1.36 to 1.47 eV depending on the Zn/Sn ratios. In this sonochemical method without using any toxic or high temperature solvents, the specific stoichiometric element Zn/Sn ratios in CZTSe were controllable on demand and their experimental results were always reproducible in separate syntheses. The CZTSe nanoparticles were investigated by using X-ray diffractometer, a UV-Vis spectrophotometer, scanning electron microscope, Raman spectroscopy, and a high resolution-transmission electron microscope.

Effect of Tin Addition on the Melting Temperatures and Mechanical Properties of Al-Si-Cu Brazing Filler Metals (저온 브레이징용 Al-Si-Cu 합금의 Sn 첨가에 따른 융점 및 기계적 특성 변화 연구)

  • Kim, Min Sang;Park, Chun Woong;Byun, Jong Min;Kim, Young Do
    • Korean Journal of Materials Research
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    • v.26 no.7
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    • pp.376-381
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    • 2016
  • For the development of a low-melting point filler metal for brazing aluminum alloy, we analyzed change of melting point and wettability with addition of Sn into Al-20Cu-10Si filler metal. DSC results showed that the addition of 5 wt% Sn into the Al-20Cu-10Si filler metal caused its liquidus temperature to decrease by about 30 oC. In the wettability test, spread area of melted Al-Cu-Si-Sn alloy is increased through the addition of Sn from 1 to 5 wt%. For the measuring of the mechanical properties of the joint region, Al 3003 plate is brazed by Al-20Cu-10Si-5Sn filler metal and the mechanical property is measured by tensile test. The results showed that the tensile strength of the joint region is higher than the tensile strength of Al 3003. Thus, failure occurred in the Al 3003 plate.

A Study of the IMC Growth and Shear Strength of Solder Bump and TiW/Cu/electroplating Cu UBM (솔더범프와 TiW/Cu/electroplating Cu UBM 층과의 금속간 화합물 형성과 범프 전단력에 관한 연구)

  • 장의구;김남훈;김남규;엄준철
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.3
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    • pp.267-271
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    • 2004
  • The joint strength and fracture surface of Sn-Pb solder bump in photo diode packages after isothermal aging testing were studied experimentally. Cu/Sn-Pb solders were adopted, and aged for up to 900 hours at 12$0^{\circ}C$ and 17$0^{\circ}C$ to analyze the effect of intermetallic compound(IMC). In 900-hour aging experiments, the maximum shea strength of Sn-Pb solder decreased by 20% and 9%. The diffraction patterns of Cu$_{6}$Sn$_{5}$, scallop-shape IMC, and planar-shape Cu$_3$Sn were observed by Transmission Electron Microscopy (TEM).EM).