• 동력기계공학회지
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• 제4권2호
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• pp.31-39
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• 2000

Relationships between the plating condition and the plating rate of the deposition film for the electroless plating of Co-Cu-P alloy were discussed in this report. The result obtained from this experiment were summarized as follow ; The optimum bath composition was consisted of 0.8 ppm thiourea as a stabilizing agent. Composition of the deposit was found to be uniform after two hours of electroless plating. Plating rates of nickel-catalytic surface and zincate-catalytic surface were found to be very closely equal, but the plating time of nickel-catalytic surface took longer than that of the zincated-catalytic surface.

• 공업화학
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• 제33권6호
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• pp.574-580
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• 2022

Dendrite 형태의 구리 입자 표면을 은으로 무전해 도금을 하는 과정에서, 치환도금(displacement plating)과 화학 환원도금(reducing electroless plating)을 병용하여 다양한 silver-coated copper (Ag@Cu) 입자들을 제조하였다. Ag@Cu 입자들의 물리화학적 특성은 SEM-EDS, TGA, XPS, XRD 및 BET 등으로 분석하였으며, 환원반응에 의하여 코팅되는 은은 구리 입자 표면에 나노 입자 형태로 형성되는 것을 확인할 수 있었다. Ag@Cu 입자들을 에폭시 수지와 복합화하여 도전성 필름을 제조하고 그의 열적 안정성을 평가하였다. 치환 반응과 환원 반응의 차이가 Ag@Cu 필름의 초기 저항 및 열적 안정성에 미치는 영향에 관하여 연구하였다.

• 한국재료학회지
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• 제23권11호
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• pp.661-665
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• 2013

We investigated the characteristics of electroless plated Cu films on screen printed Ag/Anodized Al substrate. Cu plating was attempted using neutral electroless plating processes to minimize damage of the anodized Al substrate; this method used sodium hypophosphite instead of formaldehyde as a reducing agent. The basic electroless solution consisted of $CuSO_4{\cdot}5H_2O$ as the main metal source, $NaH_2PO_2{\cdot}H_2O$ as the reducing agent, $C_6H_5Na_3O_7{\cdot}2H_2O$ and $NH_4Cl$ as the complex agents, and $NiSO_4{\cdot}6H_2O$ as the catalyser for the oxidation of the reducing agent, dissolved in deionized water. The pH of the Cu plating solutions was adjusted using $NH_4OH$. According to the variation of pH in the range of 6.5~8, the electroless plated Cu films were coated on screen printed Ag pattern/anodized Al/Al at $70^{\circ}C$. We investigated the surface morphology change of the Cu films using FE-SEM (Field Emission Scanning Electron Microscopy). The chemical composition of the Cu film was determined using XPS (X-ray Photoelectron Spectroscopy). The crystal structures of the Cu films were investigated using XRD (X-ray Diffraction). Using electroless plating at pH 7, the structures of the plated Cu-rich films were typical fcc-Cu; however, a slight Ni component was co-deposited. Finally, we found that the formation of Cu film plated selectively on PCB without any lithography is possible using a neutral electroless plating process.

• 마이크로전자및패키징학회지
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• 제15권2호
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• pp.17-21
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• 2008

Sn-Cu계 솔더 범프에서 무전해도금법을 이용한 범프 형성에 대한 연구를 하였다. $20{\mu}m$ via에 전기도금법으로 구리를 채운 웨이퍼 위에 ball형태의 범프를 형성하기 위하여 구리와 주석을 도금하여 약 $10{\mu}m$높이의 범프를 형성하였다. 구리 범프 형성 시 via위에 선택적으로 도금하기 위하여 활성화 처리 후 산세처리를 실시하고 무전해 도금액에 안정제를 첨가하였다. 무전해도금법을 이용하여 주석 범프 형성 시 도금층이 구리 범프에 비해 표면의 균일도가 벌어지는 것으로 관찰되었지만 reflow공정을 실시한 후 ball 형태의 균일한 Sn-Cu 범프를 형성하였다.

• Journal of Electrochemical Science and Technology
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• 제8권3호
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• pp.215-221
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• 2017

The electroless plating process largely consists of substrate cleaning, seed formation (activator formation), and electroless plating. The most widely used activator in the seed formation step is Pd, and Sn ions are used to facilitate the formation of this Pd seed layer. This is problematic because the Sn ions interfere with the reduction of Cu ions during electroless plating; thus, the Sn ions must be removed by a hydrochloric acid cleaning process. This method is also expensive due to the use of Pd. In this study, Cu electroless plating was performed by forming a seed layer using a silver nanosol instead of Pd and Sn. The effects of the Ag nanosol concentration in the pretreatment solution and the pretreatment time on the thickness and surface morphology of the Cu layer were investigated. The degrees of adhesion to the substrate were similar for the electroless-plated Cu layers formed by conventional Pd activation and those formed by the Ag nanosol.

• 자원리싸이클링
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• 제10권2호
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• pp.27-33
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• 2001

무전해 Ni-Cu-P폐 도금액의 재사용에 대해 소정의 조건에서 조사하였다. 아연화처리한 후 니켈 촉매의 처리는 니켈 촉매처리를 하지 않았을 때 보다 도금시간이 연장되었다 Batch type에서 새로 제조한 도금액에 폐 도금액을 50% 첨가하여도 무전해 Ni-Cu-P 폐 도금액의 재사용이 가능하였다. 새로 제조한 도금액에 소모된 도금액의 성분을 연속적으로 보충하여 도금하면(Continuous type), 보충하지 않았을 경우(B기ch type)보다 도금시간이 10배 연장되었다. 새로 제조한 도금액에 폐 도금액 50%를 첨가하여 소모된 도금액의 성분을 연속적으로 보충할 경우(Continuous type)의 도금시간은 보충하지 않았을 경우(Batch type)의 도금시간 보다 3.7배 연장되었다. 도금층의 불량과 급격한 도금속도의 감소는 도금층의 Ni과 Cu의 성분 변화에 큰 영향을 미쳤다.

• 자원리싸이클링
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• 제12권1호
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• pp.18-24
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• 2003

무전해 Ni-Cu-B 폐 도금액의 재사용에 대해 소정의 조건에서 조사하였다. 아연화처리한 후 니켈 촉매의 처리는 니켈 촉매처리를 하지 않았을 때 보다 도금시간이 연장되었다. Batch type에서 새로 제조한 도금액에 폐 도금액을 40% 첨가하여도 무전해 Ni-Cu-B 폐 도금액의 재사용이 가능하였다. 새로 제조한 도금액에 소모된 도금액의 성분을 연속적으로 보충하여 도금하면(continuous type), 보충하지 않았을 경우(batch type) 보다 도금시간이 6배 연장되었다. 새로 제조한 도금액에 폐 도금액 40%를 첨가하여 소모된 도금 액의 성분을 연속적으로 보충할 경우(continuous type)의 도금시간은 보충하지 않았을 경우(continuous type)의 도금시간 보다 2배 연장되었다. 도금층의 불량과 급격한 도금속도의 감소는 도금층의 Ni과 Cu의 성분 변화에 큰 영향을 미쳤다.

• 동력기계공학회지
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• 제10권3호
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• pp.58-66
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• 2006

The effect of bath composition, plating condition and plating rate on the magnetic properties of electroless Ni-Cu-P deposits were investigated. With increasing $CuSO_4$ concentration in the bath, plating rate increased, while the Br value of deposits decreased Sharply. Plating rate increased up to 34% with the addition of 200ppm of NaF and 0.8ppm of Thiourea to the bath. Plating reaction had been ceased by the increase of pH above 11.3, bath temperature higher than $90^{\circ}C$ and under $70^{\circ}C$. The Br value of deposit was uniform with various concentration of complexing agent (Sodium citrate, Ethylenediamine) in the bath. The Br value of deposit was almost equal to that found by the addition of stabilizer(Thiourea) and accelerator(NaF). The Br value of deposit was uniform in plating time(120 min) and heat treatment temperature(below $200^{\circ}C$), and were confirmed to have adequate bath stability for practical use.

• 동력기계공학회지
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• 제8권3호
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• pp.36-43
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• 2004

The effect of bath composition, plating condition and plating rate on the magnetic property of electroless Co-Cu-P deposits were investigated. With increasing $CuCl_2$ concentration in the bath, plating rate increased, while the Br value of deposit decreased sharply. Deposited surface were inferiority by the increase pH above 10.5, bath temperature higher than $80^{\circ}C$. Plating reaction had been ceased by the increase of pH above 11, bath temperature higher than $90^{\circ}C$ and under $40^{\circ}C$. The Br value of deposit was uniform with various concentration of complexing agent(sodium citrate) in the bath. The Br value of deposit was almost equal to that found by the addition of stabilizer (thiourea) and accelerator(NaF). The Br value of deposit was uniform in plating time(20min) and heat treatment temperature(below $200^{\circ}C$), and were confirmed to have adequate bath stability for practical use.

• 한국재료학회지
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• 제13권2호
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• pp.101-105
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• 2003

In this study, we have investigated the availability of the electroless Ni-B plating for a diffusion barrier of the bus electrode. The Ni-B layer of 1$\beta$: thick was electroless deposited on the electroplated Cu bus electrode for AC plasma display. The layer was to encapsulate Cu bus electrode to prevent from its oxidation and to serve as a diffusion barrier against Cu contamination of the transparent dielectric layer in AC plasma display. The microstructure of the as-plated barrier layer was made of an amorphous phase and the structure was converted to crystalline at about 30$0^{\circ}C$. The concentration of boron was about 5∼6 wt.% in the electroless Ni-B deposit regardless of DMAB concentration. The electroless Ni-B deposit was coated on the surface of the electroplated Cu bus electrode uniformly. And the electroless Ni-B plating was found to be an appropriate process to form the diffusion barrier.