• Mycobiology
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• v.45 no.2
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• pp.73-83
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• 2017

The ability of dead cells of endophytic Drechslera hawaiiensis of Morus alba L. grown in heavy metals habitats for bioremoval of cadmium ($Cd^{2+}$), copper ($Cu^{2+}$), and lead ($Pb^{2+}$) in aqueous solution was evaluated under different conditions. Whereas the highest extent of $Cd^{2+}$ and $Cu^{2+}$ removal and uptake occurred at pH 8 as well as $Pb^{2+}$ occurred at neutral pH (6-7) after equilibrium time 10 min. Initial concentration 30 mg/L of $Cd^{+2}$ for 10 min contact time and 50 to 90 mg/L of $Pb^{2+}$ and $Cu^{2+}$ supported the highest biosorption after optimal contact time of 30 min achieved with biomass dose equal to 5 mg of dried died biomass of D. hawaiiensis. The maximum removal of $Cd^{2+}$, $Cu^{2+}$, and $Pb^{2+}$ equal to 100%, 100%, and 99.6% with uptake capacity estimated to be 0.28, 2.33, and 9.63 mg/g from real industrial wastewater, respectively were achieved within 3 hr contact time at pH 7.0, 7.0, and 6.0, respectively by using the dead biomass of D. hawaiiensis compared to 94.7%, 98%, and 99.26% removal with uptake equal to 0.264, 2.3, and 9.58 mg/g of $Cd^{2+}$, $Cu^{2+}$, and $Pb^{2+}$, respectively with the living cells of the strain under the same conditions. The biosorbent was analyzed by Fourier Transformer Infrared Spectroscopy (FT-IR) analysis to identify the various functional groups contributing in the sorption process. From FT-IR spectra analysis, hydroxyl and amides were the major functional groups contributed in biosorption process. It was concluded that endophytic D. hawaiiensis biomass can be used potentially as biosorbent for removing $Cd^{2+}$, $Cu^{2+}$, and $Pb^{2+}$ in aqueous solutions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.50-55
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• 2021

Copper-chromium alloys have been used as contact materials of vacuum interrupters in circuit breakers, but new materials with highly stable performance are required to break the high voltage and high current barrier due to the recent increase in breaking capacity. In this paper, a new contact material was fabricated from a ternary alloy instead of existing Cu-Cr alloys. Its breaking performance and endurance were verified from a synthetic test and compared with that of various contact materials. The test results verified that the breaking performance of the new contact material was excellent.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.12
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• pp.1346-1350
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• 2012

Contact wire is one of the most important components supplying electricity to railroad cars. At the beginning of the research on contact wire, wear problem caused by friction between contact wire and pantograph was considered even more important issue for the failure of contact wire. However, since several fatigue fractures were reported from Shinkansen in Japan, fatigue fracture has become another important issue for the failure of contact wire. Despite of its importance, standard of the fatigue test of contact wire has not been established yet. Thus, fatigue characteristics of contact wire is very difficult issue to evaluate quantitatively. Hence, in this study, test method simulating operating conditions of contact wire by Minsung Kang and etc. is used to evaluate the fatigue characteristics of copper alloy contact wire. Also, test results is compared with the result of Minsung Kang's research on pure copper contact wire.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1193-1196
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• 2009

Low resistivity interconnection and high-mobility channel are required to realize ultrahigh-definition LCDs such as 4k ${\times}$ 2k TVs. We evaluated fully Cu-based gate and Source/Drain interconnections, consisting of stacked pure-Cu/Cu-Mn layers for TFT-LCDs, and found the underlying Cu-Mn alloy film has superior adhesion to glass substrates and CVD-SiOx films. It was also confirmed that wet etching of the Cu/Cu-Mn films without residues and low contact resistance with both channel IGZO and pixel ITO films can be obtained. It is thus considered that the stacked Cu/Cu-Mn structure is one of candidates to replacing conventionally pure-Cu/refractory metal.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.614-618
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• 2006

The thermal stability of Cu/Ti(or Ta)/NiSi contacts was investigated. Ti(Ta)-capping layers deposited to form NiSi was utilized as the Cu diffusion barrier. Ti(Ta)/NiSi contacts was thermally stable upto $600^{\circ}C$. However when Cu/Ti(Ta)/NiSi contacts were furnace-annealed at $300{\sim}400^{\circ}C$ for 40 min., the Cu diffusion was found to be effectively suppressed, but NiSi was dissociated and then Ni diffused into the Cu layer to form Cu-Ni solutions. On the other hand, the Ni diffusion did not occur for the Al/Ti/NiSi system. The thermal instability of Cu/Ti(Ta)/NiSi contacts was attributed to the high heat of solution of Ni in Cu.

• Electronic Materials Letters
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• v.14 no.6
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• pp.718-724
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• 2018

With the development of photovoltaic industry, the cost of photovoltaic power generation has become the significant issue. And the metallization process has decided the cost of original materials and photovoltaic efficiency of the solar cells. Nowadays, double printing process has been introduced instead of one-step printing process for front contact of polycrystalline silicon solar cells, which can effectively improve the photovoltaic conversion efficiency of silicon solar cells. Here, the relative cheap Cu paste has replaced the expensive Ag paste to form Ag/Cu composite front contact of silicon solar cells. The photovoltaic performance and the cost of photovoltaic power generation have been investigated. With the optimization on structure and height of Cu finger layer for Ag/Cu composite double-printed front contact, the silicon solar cells have exhibited a photovoltaic conversion efficiency of 18.41%, which has reduced 3.42 cent per Watt for the cost of photovoltaic power generation.

• Progress in Superconductivity
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• v.14 no.1
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• pp.1-10
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• 2012

We fabricated a closed coils by using resistive-joint method and the joint resistance of the coils were estimated by field decay technique in liquid nitrogen. We used the Runge-kutta method for the numerical analysis to calculate the decay properties. The closed coil was wound by $(Bi,Pb)_2Sr_2Ca_2Cu_3O_x$/Ag tape. Both ends the tape were overlapped and soldered to each other. The current was induced in a closed coils by external magnetic flux density. Its decay characteristic was observed by means of measuring the magnetic flux density generated by induced current at the center of the closed coil with hall sensor. The joint resistance was calculated as the ratio of the inductance of the loop to the time constants. The joint resistances were evaluated as a function of critical current of loop, contact length, sweep time, and external magnetic flux density in a contact length of 7 cm. It was observed that joint resistance was dependent on contact length of a closed coil, but independent of critical current, sweep time, and external magnetic flux density. The joint resistance was measured to be higher for a standard four-probe method, compared with that for the field decay technique. This implies that noise of measurement in a standard four-probe method is larger than that of field decay technique. It was estimated that joint resistance was $8.0{\times}10^{-9}{\Omega}$ to $11.4{\times}10^{-9}{\Omega}$ for coils of contact length for 7 cm. It was found that 40Pb/60Sn solder are unsuitable for persistent mode.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.37-45
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• 2008

In this study, reliabilities of Cu (60 um)/SnAg (20 um) double-bump flip chip assemblies were investigated for the flip chip interconnections on organic substrates with 100 um pitch. After multiple reflows at $250^{\circ}C\;and\;280^{\circ}C$, bump contact resistances were almost same regardless of number of reflows and reflow temperature. In the high temperature storage test, there was no bump contact resistance change at $125^{\circ}C$ up to 2000 hours. However, bump contact resistances slightly increased at $150^{\circ}C$ due to Kirkendall voids formation. In the electromigration test, Cu/SnAg double-bump flip chip assemblies showed no electromigration until about 600 hours due to reduced local current density. Finally, in the thermal cycling test, thermal cycling failure mainly occurred at Si chip/Cu column interface which was found out the highest stress concentration site in the finite element analysis. As a result, Al pad was displaced out under thermal cycling. This failure mode was caused by normal compressive strain acting Cu column bumps along perpendicular direction of a Si chip.

• Journal of Surface Science and Engineering
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• v.45 no.1
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• pp.8-14
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• 2012

The effects of the alkali surface modification process on the adhesion strength between electroless-plated Cu and polyimide films were investigated. The polyimide surfaces were effectively modified by alkali surface treatments from the hydrophobic to the hydrophilic states, and it was confirmed by the results of the contact angle measurement. The surface roughness increased by alkali surface treatments and the adhesion strength was proportional to the surface roughness. The adhesion strength of Cu/polyimide interface treated by KOH + EDA (Ethylenediamine) was 874 gf/cm which is better than that treated by KOH and KOH + $KMnO_4$. The results of XPS spectra revealed that the alkali treatment formed oxygen functional groups such as carboxyl and amide groups on the polyimide films which is closely related to the interfacial bonding mechanism between electroless-plated Cu and polyimide films. It could be suggested that the species and contents of functional group on polyimide films, surface roughness and contact angle were related with the adhesion strength of Cu/polyimide in combination.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.298-302
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• 2010

We investigated the resistance change behavior of SABiT (Samsung Advanced Bump interconnection Technology) technology-applied PCB (Printed Circuit Board) with the various bump sizes and fabrication conditions. Many testing samples with different bump size, prepreg thickness, number of print on the formation of Ag paste bump, were made. The resistance of Ag paste bump itself was calculated from the Ag paste resistivity and bump size, measured by using 4-point probe method and FE-SEM (Field Emission Scanning Electron Microscope), respectively. The contact resistance between Ag paste bump and conducting Cu line were obtained by subtracting the Cu line and bump resistances from the measured total resistance. It was found that the contact resistance drastically changed with the variation of Ag paste bump size and the contact resistance had the largest influence on total resistance. We found that the bump size and contact resistance obeyed the power law relationship. The resistance of a circuit in PCB can be estimated from this kind of relationship as the bump size and fabrication technique vary.