• E2M - 전기 전자와 첨단 소재
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• 제8권5호
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• pp.619-625
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• 1995

Polycrystalline CdTe thin film has been studied for photovoltaic application due to the 1.45 eV band gap energy ideal for solar energy conversion and high absorption coefficient. The formation of low resistance contact to p-CdTe is difficult because of large work function(>5.5eV). Common methods for ohmic contact to p-CdTe are to form a p+ region under the contact by in-diffusion of contact material to reduce the barrier height and modify a p-CdTe surface layer using chemical treatment. In this study, the surface chemical treatment of p CdTe was carried out by H$\_$3/PO$\_$4/+HNO$\_$3/ or K$\_$2/Cr$\_$2/O$\_$7/+H$\_$2/SO$\_$4/ solution to provide a Te-rich surface. And various thin film contact materials such as Cu, Au, and Cu/Au were deposited by E-beam evaporation to form ohmic contact to p-CdTe. After the metallization, post annealing was performed by oven heat treatment at 150.deg. C or by RTA(Rapid Thermal Annealing) at 250-350.deg. C. Surface chemical treatments of p-CdTe thin film improved metal/p-CdTe interface properties and post heat treatment resulted in low contact resistivity to p-CdTe.Of the various contact metal, Cu/Au and Cu show low contact resistance after oven and RTA post-heat treatments, respectively.

• 마이크로전자및패키징학회지
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• 제22권3호
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• pp.39-44
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• 2015

이방성 전도접착제를 이용하여 Cu/Au 칩 범프를 Cu 기판 배선에 플립칩 실장한 접속부에 대해 CNT-Ag 복합패드가 접속저항에 미치는 영향을 연구하였다. CNT-Ag 복합패드가 내재된 플립칩 접속부가 CNT-Ag 복합패드가 없는 접속부에 비해 더 낮은 접속저항을 나타내었다. 각기 25 MPa, 50 MPa 및 100 MPa의 본딩압력에서 CNT-Ag 복합패드가 내재된 접속부는 $164m{\Omega}$, $141m{\Omega}$ 및 $132m{\Omega}$의 평균 접속저항을 나타내었으며, CNT-Ag 복합패드를 형성하지 않은 접속부는 $200m{\Omega}$, $150m{\Omega}$ 및 $140m{\Omega}$의 평균 접속저항을 나타내었다.

• 한국환경과학회지
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• 제11권4호
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• pp.333-338
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• 2002

In this work, the characterization of adsorption of Cu, Zn and Cd on granular activated carbon in water has been studied. The factors that affect adsorption in boundary between activated carbon and wastewater are concentration, temperature, contact time, pH and so on. As the result of this study, the maximum adsorption amount of Cu occurred near pH 7, while that of Zn and Cd was near pH 9.6 and 10, respectively. As contact time and temperature are transformed, such factors as optimum contact time and temperature are taken into consideration in an adsorptive process of heavy metal because an adsorption and a reducing process occur. In isotherm of Freundlich, 1/n values of Cu, Cd capacity were between 0.16 and 0.5.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1643-1645
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• 2000

The effects of pre-sintering and infiltration conditions on the electrical and physical properties of Cu-Cr contact material have been studied. Specimens were prepared by infiltration technique, aiming at the final composition of Cu50w%Cr, with varying pre-sintering and infiltration conditions. It showed that increased pre-sintering temperature had a little influence on the final microstructure of Cu-Cr contact material, but improved the surface morphology of Cr-skeleton resulting in better wettability in the followed infiltration process. It also showed that Cr grain growth and gram shape change became prominent with increasing infiltration temperature and time.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 춘계학술발표대회 논문집
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• pp.230-234
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• 2009

It is significant technique to increase competitiveness that solar cells have a high energy conversion efficiency and cost effectiveness. When making high efficiency crystalline Si solar cells, evaporated Ti/Pd/Ag contact system is widely used in order to reduce the electrical resistance of the contact fingers. However, the evaporation process is no applicable to mass production because high vacuum is needed. Furthermore, those metals are too expensive to be applied for terrestrial applications. Ni/Cu/Ag contact system of silicon solar cells offers a relatively inexpensive method of making electrical contact. Ni silicide formation is one of the indispensable techniques for Ni/Cu/Ag contact sytem. Ni was electroless plated on the front grid pattern, After Ni electroless plating, the cells were annealed by RTP(Rapid Thermal Process). Ni silicide(NiSi) has certain advantages over Ti silicide($TiSi_2$), lower temperature anneal, one step anneal, low resistivity, low silicon consumption, low film stress, absence of reaction between the annealing ambient. Ni/Cu/Ag metallization scheme is an important process in the direction of cost reduction for solar cells of high efficiency. In this article we shall report an investigation of rapid thermal silicidation of nickel on silngle crystalline silicon wafers in the annealing range of $350-390^{\circ}C$. The samples annealed at temperatures from 350 to $390^{\circ}C$ have been analyzed by SEM(Scanning Electron Microscopy).

• 한국주조공학회지
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• 제12권3호
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• pp.238-247
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• 1992

A carbon fiber(CF) reinforced Cu-10%Sn alloy matrix composite was successfully fabricated by squeeze casting method employing preheated graphite mold and proper process controlling factors. The matrix solidification microstructure of the Cu-10%Sn/CF composite reveals ${\alpha}-dendrite$ and ${\alpha}+{\delta}$ eutectoid. To compare the squeeze cast Cu-10%Sn/CF compostie with PM route fabricated Cu-graphite composites for electric contact material, mechanical wear and electrical arc wear tests were performed. Mechanical wear rate of the Cu-10%Sn/CF is much lower than that of the Cu-graphite composite. Weight loss with a variation of contact number in electrical arc wear tests shows a similar trend between the squeeze cast Cu-10%Sn/CF and PM Cu-graphite composites.

• 한국재료학회지
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• 제16권8호
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• pp.511-515
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• 2006

The dispersion hardened $Cu-TiB_2$ composites are a promising candidate for applications as electrical contact materials. The $Cu-TiB_2$ composites for electrical contact materials can reduce material cost and resource consumption caused by wear, due to their good mechanical and electrical properties. In this study, we investigated the wear phenomenon for $Cu-TiB_2$ composites fabricated with hot extrusion, by varying particle sizes and volume fractions of $TiB_2$. The wear tests were performed under the dry sliding condition with a fixed total sliding distance of 40 m. The contact loads at a constant speed of 3.5 Hz were 20, 40, 60, and 80 N. The friction coefficients and wear losses were measured during wear tests. Worn surfaces and wear debris after wear tests were investigated using the scanning electron microscope and the optical microscope. The microstructures of interface between Cu matrix and $TiB_2$ particle before and after wear tests were studied by the transmission electron microscope.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.328-332
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• 2011

The formation of front metal contact silicon solar cells is required for low cost, low contact resistance to silicon surface. One of the front metal contacts is Ni/Cu plating that it is available to simply and inexpensive production to apply mass production. Ni is shown to be a suitable barrier to Cu diffusion into the silicon. The process of Ni electroless plating on front silicon surface is performed using a chemical bath. Additives and buffer agents such as ammonium chloride is added to maintain the stability and pH control of the bath. Ni deposition rate is found to vary with temperature, time, utilization of bath. The experimental result shown that Ni layer by SEM (scanning electron microscopy) and EDX analysis. Finally, plated Ni/Cu contact solar cell result in an efficiency of 17.69% on $2{\times}2\;cm^2$, Cz wafer.

• 한국초전도ㆍ저온공학회논문지
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• 제20권4호
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• pp.26-30
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• 2018

The turn-to-turn contact resistance of 2G high temperature superconducting (HTS) coils with metal insulation (MI) is closely related to the stability of the coils, current charging rate and delay time [1]. MI coils were fabricated using five kinds of metal tapes such as aluminum (Al) tape, brass tape, stainless steel (SS) tape, copper (Cu)-plated tape and one-sided Cu-plated SS tape. The turn-to-turn contact surface resistances of co-winding model coils using Al tape, brass tape, and SS tape were 342.6, 343.6 and $724.8{\mu}{\Omega}{\cdot}cm^2$, respectively. The turn-to-turn contact resistance of the model coil using the one-sided Cu-plated SS tape was $ 248.8{\mu}{\Omega}{\cdot}cm^2$, which was lower than that of Al and brass tape. Al or brass tape can be used to reduce contact resistance and improve the stability of the coil. Considering strength, SS tape is recommended. For strength and low contact resistance, SS tape with copper plating on one side can be used.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2003년도 추계학술발표대회 개요집
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• pp.234-236
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• 2003