• 제목/요약/키워드: Cu adhesion

검색결과 254건 처리시간 0.02초

5, 100 mtorr의 증착압력에서 스퍼터 증착한 구리박막층이 Cu/Cr 박막과 폴리이미드 사이의 접착력에 미치는 영향 (The effects of Cu thin films sputter deposited at 5 and 100 mtorr on the adhesion between Cu/Cr film and polyimide)

  • 조철호;김영호
    • 한국표면공학회지
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    • 제29권3호
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    • pp.157-162
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    • 1996
  • The effects of microstructural change on the adhesion strength between Cu/Cr film and polyimide have been studied. Cr films (50 nm thick) and Cu films (500 or 1000 nm thick) were deposited on polyimide by DC magnetron sputtering. During Cu deposition the Ar pressure was 5 or 100 mtorr. The microstructure was observed by SEM and the adhesion was measured by T-peel test. Plastic deformation of peeled metal strips was characterized quantitatively by using XRD technique. The film in which Cu is deposited at 100 mtorr has higher adhesion strength than the film in which Cu is deposited at 5 mtorr. And in the film with same deposition pressure of 100 mtorr, the adhesion strength is increased as the deposited thickness increases from 500 to 1000 nm. The adhesion change of Cu/Cr can be interpreted as the difference in plastic deformation.

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Ti glue layer, Boron dopant, N2plasma 처리들이 Cu와 low-k 접착력에 미치는 효과 (Adhesion Property of Cu on Low-k : Ti Glue Layer, Boron Dopant, N2plasma effects)

  • 이섭;이재갑
    • 한국재료학회지
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    • 제13권5호
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    • pp.338-342
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    • 2003
  • Adhesion between Cu and low-k films has been investigated. Low-k films deposited using a mixture of hexamethyldisilane(HMDS) and Para-xylene had a dielectric constant as low as 2.7, showing the thermally stable properties up to $400^{\circ}C$. In this study, Ti glue layer, boron dopant, and $N_2$plasma treatment were used to improve adhesion property of between Cu and low-k films. Ti glue layer slightly improved adhesion property. After $N_2$plasma treatment, the adhesion property was significantly improved due to the increased roughness and the formation of new binding states between Ti and plasma-treated PPpX : HMDS. However, $300^{\circ}C$ annealing of $N_2$plasma treated sample caused the diffusion of Cu into the PPpX : HMDS, degrading the low-k properties. In the case of Cu(B)/Ti/PPpX : HMDS, the adhesion was remarkably increased. This enhanced adhesion was attributed to formation of Ti-boride at the Cu-Ti interface. It is because the formed Ti-boride prevented the diffusion of Cu into the PPpX : HMDS and the Cu-Ti reaction at the Ti interface.

폴리이미드에 스퍼터 증착한 Cu-Cr, Cu-Ti 합금박막의 열처리 전후의 접착력과 미세구조 (Microsstructure of Sputter-Deposited and Annealed Cu-Cr, Cu-Ti Alloy Films on Polyimide Substrate and Their Adhesion Property)

  • 서환석;김기범
    • 한국표면공학회지
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    • 제27권5호
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    • pp.261-272
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    • 1994
  • Both Cu-Cr and Cu-Ti alloy films with different composition were prepared by dc magnetron sputtering onto polyimide substrate and their adhesion and microstructure were observed. In addition, the effect of heat treatment at $400^{\circ}C$ for 2 hours on the variation of adhesion properties and on the changess of microstructure were investigated. Cu-Cr alloy films have crystalline structure of either for or bcc phase depending on the composition of the film. However, the Cu-Ti alloy film forms fcc phase at low Ti concentration while it forms an amorphous phase as the Ti concentration in the films is increased to more than 25at.%. TEM analysis reveal that the microstructure of Cu-Cr and Cu-Ti films forms an open structure with vacant spaces. The adhesion between Cu-Cr, Cu-Ti alloy films and polyimide substrate is relatively good before the heat treatment, but is noticeably reduced after the heat treatment. In particular, the adhesion strength is significantly reduced in the Cu-Ti alloy films after the heat treatment. The reduction of adhesion strength after the heat treatment is identified to relate with the formation of oxide phases at the metal/polyimide interface by AES(Auger Electron Spectroscopy).

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Cu-18wt% Cr 합금박막과 폴리이미드사이의 접착력 : 열처리 영향 (Adhesion between Cu-18wt% Cr Alloy Film and Polyimide : Effect of Heat Treatment)

  • 임준홍;김영호;한승희
    • 한국표면공학회지
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    • 제26권6호
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    • pp.327-333
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    • 1993
  • The effect of heat treatment on the adhesion between Cu-18wt% Cr film and polyimide has been studied by using T-peel test, AES, and XRD. Cu-18wt% Cr alloy and pure Cu films were sputter deposited onto pol-yimide. Cu was electroplated before and after heat treatment at $400^{\circ}C$ for 0.5 hr and 2 hrs respectively. The adhesion of metal film onto polyimide was considerably good before heat treatment, but heat treatment re-duced the peel adhesion strength in all specimens. The reduction in adhesion in adhesion strength values in the specimens which were plated after heat treatment was mainly due to Cr-O rich pahse formed in the metal/polyimide in-terface. In the specimens which were heat treated after plating, the enhanced ductility in the metal films con-tributes the peel adhesion strength by increasing the amount of deformation in metal strips.

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Alumina substrate 상의 무전해 도금층의 밀착력에 관한 연구 (A study on adhesion strength of electroless plated deposits on Alumina substrate)

  • 조용균;안균영;박용수
    • 한국표면공학회지
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    • 제24권4호
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    • pp.187-195
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    • 1991
  • Adhesion strength of electroless-plated Ni, Ni-P and Cu deposites on alumina substrate has been studied. Grain boundary spaces produced on the substrate surface by etching treatment provided anchoring sites for enhancing the adhesion strength. Adhesion strengths of Ni-P and Ni deposit were higher than that of Cu deposit, because of higher initial nucleation rates than the latter. The electroless-plated Ni-P and Ni underlayer improved the adhesion strength of the Cu deposit. In could be attributed to the enhanced adhesion between the substrate and those underlayers as well as the satisfactory adhesion between Cu deposits and those underlayers. Heat treatment was also conducted in order to enhance the adhesion strength of Cu layer. The strength was enhanced by about 19% when the treatment was conducted at $150^{\circ}C$ for 2 hours. The enhancement was attributed to relief of internal stress and release of hydrogen.

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Cu/CuO/Polyimide 시스템의 접착 및 계면화학 반응 (Adhesion and Interface Chemical Reactions of Cu/CuO/Polyimide System)

  • 이경운;채홍철;최철민;김명한
    • 한국재료학회지
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    • 제17권2호
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    • pp.61-67
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    • 2007
  • The magnetron reactive sputtering was adopted to deposit CuO buffer layers on the polyimide surfaces for increasing the adhesion strength between Cu thin films and polyimide, varying $O_2$ gas flow rate from 1 to 5 sccm. The CuO oxide was formed through all the $O_2$ gas flow rates of 1 to 5 sccm, showing the highest value at the 3 sccm $O_2$ gas flow rate. The XPS analysis revealed that the $Cu_2O$ oxide was also formed with a significant ratio during the reactive sputtering. The adhesion strength is mainly dependent on the amount of CuO in the buffer layers, which can react with C-O-C or C-N bonds on the polyimide surfaces. The adhesion strength of the multi-layered Cu/buffer layer/polyimide specimen decreased linearly as the heating temperature increased to $300^{\circ}C$, even though there showd no significant change in the chemical state at the polyimide interface. This result is attributed to the decrease in surface roughness of deposited copper oxide on the polyimide, when it is heated.

Cu/Ni/Polyimide 시스템의 접착력 및 계면화학반응 (The Adhesion Strength and Interface Chemical Reaction of Cu/Ni/Polyimide System)

  • 최철민;채홍철;김명한
    • 한국재료학회지
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    • 제17권12호
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    • pp.664-668
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    • 2007
  • The magnetron sputtering was used to deposit Ni buffer layers on the polyimide surfaces to increase the adhesion strength between Cu thin films and polyimide as well as to prevent Cu diffusion into the polyimide. The Ni layer thickness was varied from 100 to $400{\AA}$. The adhesion strength increased rather significantly up to $200{\AA}$ of Ni thickness, however, there was no significant increase in strength over $200{\AA}$. The XPS analysis revealed that Ni thin films could increase the adhesion strength by reacting with the polar C=O bonds on the polyimide surface and also it could prevent Cu diffusion into the polyimide. The Cu/Ni/ polyimide multilayer thin films showed a high stability even at the high heating temperature of $200^{\circ}C$, however, at the temperature of $300^{\circ}C$, Cu diffused through the Ni buffer layer into polyimide, resulting in the drastic decrease in adhesion strength.

플라즈마 에칭 및 $PdCl_2/SnCl_2$ 촉매조건이 무전해 동도금 피막의 성능에 미치는 영향 (Effect of Plasma Etching and $PdCl_2/SnCl_2$ Catalyzation on the Performance of Electroless Plated Copper Layer)

  • 오경화;김동준;김성훈
    • 한국의류학회지
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    • 제27권7호
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    • pp.843-850
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    • 2003
  • Cu/PET film composites were prepared by electroless copper plating method. In order to improve adhesion between electroless plated Cu layer and polyester (PET) film, the effect of pretreatment conditions such as etching method, mixed catalyst composition were investigated. Chemical etching and plasma treatment increased surface roughness in decreasing order of Ar>HCl>O$_2$>NH$_3$. However, adhesion of Cu layer on PET film increased in the following order: $O_2$<Ar<HCl<NH$_3$. It indicated that appropriate surface roughness and introduction of affinitive functional group with Pd were key factors of improving adhesion of Cu layer. PET film was more finely etched by HCI tolution, resulting in an improvement in adhesion between Cu layer and PET film. Plasma treatment with NH$_3$produced nitrogen atoms on PET film, which enhances chemisorption of Pd$^{2+}$ on PET film, resulting in improved adhesion and shielding effectiveness of Cu layer deposited on the Pd catalyzed surface. Surface morphology of Cu plated PET film revealed that Pd/Sn colloidal particles became more evenly distributed in the smaller size by increasing the molar ratio of PdCl$_2$; SnCl$_2$from 1 : 4 to 1 : 16. With increasing the molar ratio of mixed catalyst, adhesion and shielding effectiveness of Cu plated PET film were increased.d.

RF 마그네트론 스퍼터링법에 의해 증착된 구리막의 특성 (The properties of copper films deposited by RF magnetron sputtering)

  • 송재성;오영우
    • E2M - 전기 전자와 첨단 소재
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    • 제9권7호
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    • pp.727-732
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    • 1996
  • In the present paper, the Cu films 4.mu.m thick were deposited by RF magnetron sputtering method on Si wafer. The Cu films deposited at a condition of 100W, 10mtorr exhibited a low electrical resistivity of 2.3.mu..ohm..cm and densed microstructure, poor adhesion. The Cu films grown by 200W, 20mtorr showed a good adhesion property and higher electrical resistivity of 7.mu..ohm..cm because of porous columnar microstructure. Therefore, The Cu films were deposited by double layer deposition method using RF magnetron sputtering on Si wafer. The dependence of the electrical resistivity, adhesion, and reflectance in the CU films [C $U_{4-d}$(low resistivity) / C $U_{d}$(high adhesion) / Si-wafer] on the thickness of d has been investigated. The films formed with this deposition methods had the low electrical resistivity of about 2.6.mu..ohm..cm and high adhesion of about 700g/cm.m.m.

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리드프레임/EMC 계면의 파괴 인성치 (Fracture Toughness of Leadframe/EMC Interface)

  • 이호영;유진
    • 한국표면공학회지
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    • 제32권6호
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    • pp.647-657
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    • 1999
  • Due to the inherently poor adhesion strength of Cu-based leadframe/EMC (Epoxy Molding Compound) interface, popcorn cracking of thin plastic packages frequently occurs during the solder reflow process. In the present work, in order to enhance the adhesion strength of Cu-based leadframe/EMC interface, black-oxide layer was formed on the leadframe surface by chemical oxidation of leadframe, and then oxidized leadframe sheets were molded with EMC and machined to form SDCB (Sandwiched Double-Cantilever Beam) and SBN (Sandwiched Brazil-Nut) specimens. SDCB and SBN specimens were designed to measure the adhesion strength between leadframe and EMC in terms of critical energy-release rate under quasi-Mode I ($G_{IC}$ ) and mixed Mode loading ($G_{C}$ /) conditions, respectively. Results showed that black-oxide treatment of Cu-based leadframe initially introduced pebble-like X$C_2$O crystals with smooth facets on its surface, and after the full growth of $Cu_2$O layer, acicular CuO crystals were formed atop of the $Cu_2$O layer. According to the result of SDCB test, $Cu_2$O crystals on the leadframe surface did not increase ($G_{IC}$), however, acicular CuO crystals on the $Cu_2$O layer enhanced $G_{IC}$ considerably. The main reason for the adhesion improvement seems to be associated with the adhesion of CuO to EMC by mechanical interlocking mechanism. On the other hand, as the Mode II component increased, $G_{C}$ was increased, and when the phase angle was -34$^{\circ}$, crack Kinking into EMC was occured.d.

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