• Korean Journal of Materials Research
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• v.21 no.1
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• pp.67-71
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• 2011

La doped CuO-ZnO-$Al_2O_3$ powders are prepared by sol-gel method with aluminum isopropoxide and primary distilled water as precursor and solvent. In this synthesized process, the obtained metal oxides caused the precursor such as copper (II) nitrate hydrate and zinc (II) nitrate hexahydrate were added. To improve the surface areas of La doped CuO-ZnO-$Al_2O_3$ powder, sorbitan (z)-mono-9-octadecenoate (Span 80) was added. The synthesized powder was calcined at various temperatures. The dopant was found to affect the surface area and particle size of the mixed oxide, in conjunction with the calcined temperature. The structural analysis and textual properties of the synthesized powder were measured with an X-ray Diffractometer (XRD), a Field-Emission Scanning Electron Microscope (FE-SEM), Bruner-Emmett-Teller surface analysis (BET), Thermogravimetry-Differential Thermal analysis (TG/DTA), $^{27}Al$ solid state Nuclear Magnetic Resonance (NMR) and transform infrared microspectroscopy (FT-IR). An increase of surface area with Span 80 was observed on La doped CuO-ZnO-$Al_2O_3$ powders from $25m^2$/g to $41m^2$/g.

• Korean Chemical Engineering Research
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• v.47 no.2
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• pp.141-149
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• 2009

The Cu thin film material and process, which have been already used for metallization of CMOS(Complementary Metal Oxide Semiconductor), has been highlighted as the Cu metallization is introduced to the metallization process for giga - level memory devices. The recent progresses in the development of key elements in electrochemical processes like surface pretreatment or electrolyte composition are summarized in the paper, because the semiconductor metallization by electrochemical processes such as electrodeposition and electroless deposition controls the thickness of Cu film in a few nm scales. The technologies in electrodeposition and electroless deposition are described in the viewpoint of process compatibility between copper electrodeposition and damascene process, because a Cu metal line is fabricated from the Cu thin film. Silver metallization, which may be expected to be the next generation metallization material due to its lowest resistivity, is also introduced with its electrochemical fabrication methods.

• Journal of Korean Society for Atmospheric Environment
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• v.9 no.4
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• pp.288-294
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• 1993

Flue gas control systems for small-scale combustors must be designed to provide highly effective removal of three criteria pollutants (S $O_{2}$, N $O_{x}$ and particulate matter), and must be safe, reliable and small. These requirements make dry, regenerative clean-up process particularly attractive and this paper describes a new concept for integrated pollutant control : a filter comprised of layered, gas permeable membranes that act as an S $O_{2}$ sorbant, a N $O_{x}$ reduction catalyst and a particulate filter. A mixed metal oxide sorbent, Cu-Ce was used as a sorbent/catalyst and the activity was compared with Cu-7Al. The S $O_{2}$ removal eficiency of Cu-Ce was increased with temperature increase up to 500$^{\circ}$C and the catalytic activity for NO was higher than that of Cu-7Al. By the sulfation of Cu-Ce, the reduction activity was increased at the temperature higher than 350$^{\circ}$C. The regeneration of Cu-Ce was very fast and some amount of elemental sulfar was found.

• Journal of Powder Materials
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• v.18 no.4
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• pp.327-331
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• 2011

In order to fabricate the porous metal with controlled pore characteristics, unique processing by using metal oxide powder as the source and camphene as the sublimable material is introduced. CuO powder was selected as the source for the formation of Cu metal via hydrogen reduction. Camphene-based CuO slurry, prepared by milling at $47^{\circ}C$ with a small amount of dispersant, was frozen at $-25^{\circ}C$. Pores were generated subsequently by sublimation of the camphene. The green body was hydrogen-reduced at $200^{\circ}C$ for 30 min, and sintered at $500-700^{\circ}C$ for 1 h. Microstructural analysis revealed that the sintered Cu showed aligned large pore channels parallel to the camphene growth direction, and fine pores are formed around the large pore. Also, it showed that the pore size was controllable by the slurry concentration.

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.41-44
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• 2014

Emission properties of the organic light-emitting diodes were investigated with the use of a hole-injection layer of copper(II)-phthalocyanine (CuPc). The manufactured device structure is indium-tin-oxide (ITO) (180 nm)/CuPc (0~50 nm)/N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD) (40 nm)/tris-(8-hydroxyquinoline) aluminum (III) ($Alq_3$) (60 nm)/Al(100 nm). We investigated the luminescence properties of $Alq_3$ which is affected by the CuPc hole-injection layer. Also, we studied the influence of light-emission properties in the structure of an ITO/CuPc/TPD/$Alq_3$/Al device depending on the several thicknesses of CuPc (0~50 nm) layer. As a result, it was found that the hole injection occurs smoothly in the device with 20 nm thick CuPc layer, and the properties become significantly worse in the device with a CuPc layer thickness higher than 40 nm. We studied the topography and external quantum efficiency depending on the layer thickness of CuPc. Also, we analyzed the electroluminescent characteristics in the low and high-voltage range.

• Applied Chemistry for Engineering
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• v.35 no.2
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• pp.96-99
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• 2024

A sintering paste for bonding copper plates was synthesized using Cu formate nanofibers on Cu microparticles, mixed with formic acid. Copper oxide nanofibers of 10 ㎛ grown at 400 ℃ on Cu microparticles on the surface were transformed into copper formate nanofibers through the mixing of formic acid. Compared to Cu bulk particles or nanoparticles, Cu formate on Cu microparticles decomposed into metallic Cu at a lower temperature of 210 ℃, facilitating the sintering of copper paste. The growth of nanofiber on Cu microparticles allowed for an increase in the reaction rate of formation to copper formate, aggregating surface area, and decomposition rate of copper formate, resulting in fast sintering.

• Journal of the Korean Chemical Society
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• v.57 no.4
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• pp.483-488
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• 2013

Copper oxide (CuO) was synthesized from $CuCl_2$ by solution method. Anatase $TiO_2$ particle was dispersed into the solution before preparing CuO, so that $TiO_2$/CuO heterojunction was created through the nucleation of CuO onto the $TiO_2$ surface. Some amount of CuO was reduced to $Cu_2O$ by treating glucose into the solution, thereby preparing $TiO_2/Cu_xO$ complex. The obtained $TiO_2/Cu_xO$ complex showed advanced phtocatalytic activity under the sun light compared with the P-25 sample. In addition, the the $TiO_2/Cu_xO$ complex showed excellent antipathogenic effect.

• Journal of the Korean Chemical Society
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• v.61 no.1
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• pp.29-33
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• 2017

Formation of Au particles in nonstoichiometric $Cu_{2-x}{^I}Cu{_2}^{II}O_{3-{\delta}}$ ($x{\approx}0.20$; ${\delta}{\approx}0.10$) oxide from aniline + hydrochloric acid mixtures and chloroauric acid in the ratios 30 : 1; 60 : 1; 90 : 1 (S1-S3) by volume and 0.01 mol of copper acetate, $Cu(OCOCH_3)_2.H_2O$, in each case is performed by sol-gel growth. Powder x-ray diffraction (XRD) results show Au particles are dispersed in tetragonal nonstoichiometric dicopper (I) dicopper (II) oxides, $Cu_{2-x}{^I}Cu{_2}^{II}O_{3-{\delta}}$ ($x{\approx}0.20$; ${\delta}{\approx}0.10$). Average crystallite sizes of Au particles determined using Scherrer equation are found to be in the approximate ranges ${\sim}85-140{\AA}$, ${\sim}85-150{\AA}$ and ${\sim}80-150{\AA}$ in S1-S3, respectively which indicate the formation of Au nano-micro size particles in $Cu_{2-x}{^I}Cu{_2}^{II}O_{3-{\delta}}$ ($x{\approx}0.20$; ${\delta}{\approx}0.10$) oxides. Hysteresis behaviour at 300 K having low loop areas and magnetic susceptibility values ${\sim}5.835{\times}10^{-6}-9.889{\times}10^{-6}emu/gG$ in S1-S3 show weakly ferromagnetic nature of the samples. Broad and isotropic electron paramagnetic resonance (EPR) lineshapes of S1-S4 at 300, 77 and 8 K having $g_{iso}$-values ${\sim}2.053{\pm}0.008-2.304{\pm}0.008$ show rapid spin-lattice relaxation process in magnetic $Cu^{2+}$ ($3d^9$) sites as well as delocalized electrons in Au ($6s^1$) nano-micro size particles in the $Cu_{2-x}{^I}Cu{_2}^{II}O_{3-{\delta}}$ ($x{\approx}0.20$; ${\delta}{\approx}0.10$) oxides. Broad and weak UV-Vis diffuse reflectance optical absorption band ~725 nm is assigned to $^2B_{1g}{\rightarrow}^2A_{1g}$ transitions, and the weak band ~470 nm is due to $^2B_{1g}{\rightarrow}^2E_g$ transitions from the ground state $^2B_{1g}$(${\mid}d_{x^2-y^2}$>) of $Cu^{2+}$ ($3d^9$) ions in octahedral coordination having tetragonal distortion.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.18.2-18.2
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• 2011

We study and analyze here a novel and simple approach to produce copper oxide nanowires in a methanol as an alternative to chemical synthesis routs and VLS-growth method. First, copper oxide nanowires are grown from copper nanoparticles in methanol at $60^{\circ}C$. Nanoparticles are synthesized via inert gas condensation, one of the dry processes. Synthesized nanowires were confirmed via XRD, FESEM and TEM. As a result, all particles have grown to Cu2O nanowires (20~30 nm in diameter, 5~10 um in length; aspect ratio >160~500). Next, these synthesized oxide nanowires are reduced copper nanowires in the furnace under hydrogen flow at $200{\sim}450^{\circ}C$. The evolution of oxide nanowires and their transformation to copper nanowires is studied as a function of time.

• Journal of the Korean Ceramic Society
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• v.13 no.2
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• pp.8-16
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• 1976

The conductive transparent film is prepared by spraying thin salt solution. In stannic chloride solution as a base solution, various dopants such as Al, Co, Cu and Ni were dissolved respectively as a chloride state and then the films were made by spraying solutions on hot glass plates. The properties of them were compared with those of the stannic salt single component film. The films doped with copper oxide and nickle oxide were improved by decreasing their sheet resistivity and temperature coefficient of resistivity. In comparison with the sheet resistivity and temperature coefficient of resistivity of stannic oxide single component film, being 2.5 K ohm/$\textrm{cm}^2$ and -1650ppm/$^{\circ}C$ respectively, its values of the film containing 15 mol % of copper oxide and formed at 40$0^{\circ}C$ were 2.5K ohm/$\textrm{cm}^2$ and -920ppm/$^{\circ}C$ respectively. The film containing 15 mol % of nickel oxide and formed at 50$0^{\circ}C$ has shown its sheet resistivity and temperature coefficient 0.7 K ohm/$\textrm{cm}^2$ and -940ppm/$^{\circ}C$ respectively.