• Current Photovoltaic Research
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• 제1권1호
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• pp.44-51
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• 2013

For preparing a device-quality $CuInSe_2$ (CISe) light-absorbing layer by single-bath electrodeposition for a superstrate-type CISe cell, morphological properties of the CISe layers were investigated by varying concentrations of sulfamic acid and potassium biphthalate, complexing/buffering agents. CISe films were grown on an $In_2Se_3$ film by applying a constant voltage of -0.5V versus Ag/AgCl for 90 min in a solution with precursors of $CuCl_2$, $InCl_3$, and $SeO_2$, and a KCl electrolyte. A dense and smooth layer of CISe could be obtained with a solution containing both sulfamic acid and potassium biphthalate in a narrow concentration range of combination. A CISe layer prepared on the $In_2Se_3$ film with proper concentrations of complexing/buffering agents exhibited thickness of $1.6{\sim}1.8{\mu}m$ with few undesirable secondary phases. On the other hand, when the bath solution did not contain either sulfamic acid or potassium biphthalate, a CISe film appeared to contain undesirable flake-shape $Cu_{2-x}Se$ phases or sparse pores in the upper part of film.

• 한국표면공학회지
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• 제43권1호
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• pp.1-6
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• 2010

The effect of organic additives, 1-(3-sulfoproyl)-2-vinylpyridineium hydroxide (SVH) and thiourea (TU), on the precision copper electrodeposition was investigated with optical, electrochemical and x-ray diffraction techniques. It was found that SVH played a r ole as a n accelerator and TU as an i nhibitor during the electroreduction of cupric ions in acidic Cu electroplating solution. Through electrochemical measurements, TU showed more strong interaction with cupric ions than SVH and dominated overall Cu electroplating process when both additives were present in the solution. In the case of three dimensional Cu electrodeposition on the 20 ${\mu}m$-patterned Ni substrates, SVH controlled the upright growth of Cu electrodeposits and so determined its flatness, while TU prohibited the lateral spreading of Cu in the course of pulse-reverse pulse current adaptation. With microscopic observation, we obtained the optimum organic additives composition, that is, 100 ppm SVH and 200 ppm TU during the current pulsation.

• 대한금속재료학회지
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• 제48권8호
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• pp.757-764
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• 2010

We report on the effect of additives on the microstructure and corrosion properties of electrodeposited Cu films. Copper films were fabricated by electrodeposition on various concentrations of gelatin in a copper sulfate electrolyte. The surface morphologies of the Cu films were observed using a scanning electron microscope (SEM), and crystal orientation of the Cu films was analyzed by X-ray diffraction measurement. (220) plane was the dominant orientation when the films were fabricated at ambient temperature, decreasing in dominance with addition of gelatin. On the other hand, (111) plane-Cu films were preferentially grown at $40^{\circ}C$, and were also diminished with adding additives. Corrosion rate measurements using the Tafel extrapolation method based on corrosion potential and current reveal the effect of additives on corrosion behavior. Corrosion behavior was found to be strongly related to the orientation of the films. Consequently, additives like gelatin influence crystal orientation of the films, and if a less dense crystal plane, e.g. (220), is preferentially oriented during electrodeposition, a lower corrosion rate could be produced, since the plane shows a lower current density.

• Journal of Electrochemical Science and Technology
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• 제11권2호
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• pp.172-179
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• 2020

The impact of effective parameters on the electrodeposition rate optimization of Au-Cu alloy at high thicknesses on the silver substrate was investigated in the present study. After ensuring the formation of gold alloy deposits with the desired and standard percentage of gold with the cartage of 18K and other standard karats that should be observed in the manufacturing of the gold and jewelry artifacts, comparing the rate of gold-copper deposition by direct and pulsed current was done. The rate of deposition with pulse current was significantly higher than direct current. In this process, the duty cycle parameter was effectively optimized by the "one factor at a time" method to achieve maximum deposition rate. Particular parameters in this work were direct and pulse current densities, bath temperature, concentration of gold and cyanide ions in electrolyte, pH, agitation and wetting agent additive. Scanning electron microscopy (SEM) and surface chemical analysis system (EDS) were used to study the effect of deposition on the cross-sections of the formed layers. The results revealed that the Au-Cu alloy layer formed with concentrations of 6gr·L^-1 Au, 55gr·L^-1 Cu, 24 gr·L^-1 KCN and 1 ml·L^-1 Lauryl dimethyl amine oxide (LDAO) in the 0.6 mA·cm^-2 average current density and 30% duty cycle, had 0.841 ㎛·min^-1 Which was the highest deposition rate. The use of electrodeposition of pure and alloy gold thick layers as a production method can reduce the use of gold metal in the production of hallow gold artifacts, create sophisticated and unique models, and diversify production by maintaining standard karats, hardness, thickness and mechanical strength. This will not only make the process economical, it will also provide significant added value to the gold artifacts. By pulsating of currents and increasing the duty cycle means reducing the pulse off-time, and if the pulse off-time becomes too short, the electric double layer would not have sufficient growth time, and its thickness decreases. These results show the effect of pulsed current on increasing the electrodeposition rate of Au-Cu alloy confirming the previous studies on the effect of pulsed current on increasing the deposition rate of Au-Cu alloy.

• 한국재료학회지
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• 제20권1호
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• pp.12-18
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• 2010

$CuInSe_2$ (CIS) thin films were electrodeposited on Mo-coated glass substrates in acidic solutions containing $Cu^{2+}$, $In^{3+}$, and $Se^{4+}$ ions, depending on deposition parameters such as deposition potential (-0.4 to -0.8 V[SCE]) and pH (1.7 to 1.9). The influences of PH and deposition potential on the atomic composition of Cu, In, and Se in the deposited films were observed. The best chemical composition, approaching 1:1:2 atomic ratio for the elements, was achieved at -0.5 V (SCE) and pH 1.8. The as-deposited films showed low crystallinity and were annealed at 300 to $500^{\circ}C$ for 30 min to improve crystallization. The surface morphologies, microstructures, and crystallographic structures of the annealed films as well as the as-deposited films were analyzed with AFM, SEM, and XRD. The defects of spherical particles appeared on the surfaces of CIS thin films in the as-deposited state and decreased in size and number with increasing annealing temperatures. Additionally, the crystallization to chalcopyrite structure and surface roughness (Ra) of the as-deposited thin films were improved with the annealing process.

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 2000년도 추계총회 및 학술발표회
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• pp.18-18
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• 2000

• 한국재료학회지
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• 제26권12호
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• pp.714-720
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• 2016

We performed this study to understand the effect of a single-crystalline anode on the mechanical properties of as-deposited films during electrochemical deposition. We used a (111) single- crystalline Cu plate as an anode, and Si substrates with Cr/Au conductive seed layers were prepared for the cathode. Electrodeposition was performed with a standard 3-electrode system in copper sulfate electrolyte. Interestingly, the grain boundaries of the as-deposited Cu thin films using single-crystalline Cu anode were not distinct; this is in contrast to the easily recognizable grain boundaries of the Cu thin films that were formed using a poly-crystalline Cu anode. Tensile testing was performed to obtain the mechanical properties of the Cu thin films. Ultimate tensile strength and elongation to failure of the Cu thin films fabricated using the (111) single-crystalline Cu anode were found to have increased by approximately 52 % and 37 %, respectively, compared with those values of the Cu thin films fabricated using apoly-crystalline Cu anode. We applied ultrasonic irradiation during electrodeposition to disturb the uniform stream; we then observed no single-crystalline anode effect. Consequently, it is presumed that the single-crystalline Cu anode can induce a directional/uniform stream of ions in the electrolyte that can create films with smeared grain boundaries, which boundaries strongly affect the mechanical properties of the electrodeposited Cu films.

• 전기화학회지
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• 제25권3호
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• pp.113-118
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• 2022

본 연구에서는 polyethylene glycol (PEG)이 구리전해도금에 미치는 영향을 cyclic voltammetry를 이용해 분석해보았다. PEG의 흡착은 함께 존재하는 음이온의 특이흡착에 따라 변화되었다. 가장 일반적인 도금액 성분인 sulfate 이온(SO₄^2-)이 존재하는 경우, PEG의 흡착이 억제되었으며 그로 인해 미약한 억제 효과가 관찰되었다. 실제로 도금액이 SO₄^2- 없이 특이흡착하지 않는 perchlorate 이온(ClO₄^-)으로만 이뤄진 경우, PEG는 도금 반응을 강하게 억제하였으며 억제 효과는 PEG의 분자량에 비례하여 나타났다. 반면, 염소 이온(Cl^-)의 특이흡착이 존재하는 경우 오히려 PEG의 억제 효과는 강화되었다. RDE 분석을 통해 강한 억제 효과는 PEG와 Cl^-간의 흡착구조체 형성에 의한 것임을 확인하였으며, 이러한 흡착 구조체 형성은 용액 조성에 따라 달라지는 특성을 나타내었다. 특히, 소수성 특성이 증가된 PEG 유도체의 경우 억제 효과가 더욱 강화되는 것으로 미루어, PEG와 Cl^-간의 흡착 구조체 형성에 PEG의 소수성 특성이 중요함을 확인하였다.

• 마이크로전자및패키징학회지
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• 제15권3호
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• pp.9-17
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• 2008

전기도금법으로 Cu 머쉬룸 범프를 형성하고 Sn 기판 패드에 플립칩 본딩하여 Cu 머쉬룸 범프 접속부를 형성하였으며, 이의 접속저항을 Sn planar 범프 접속부와 비교하였다. $19.1\sim95.2$ MPa 범위의 본딩응력으로 형성한 Cu머쉬룸 범프 접속부는 $15m\Omega$/bump의 평균 접속저항을 나타내었다. Cu머쉬룸 범프 접속부는 Sn planar범프 접속부에 비해 더 우수한 접속저항 특성을 나타내었다. 캡 표면에 $1{\sim}w4{\mu}m$ 두께의 Sn 코팅층을 전기도금한 Cu 머쉬룸 범프 접속부의 접속저항은 Sn 코팅층의 두께에 무관하였으나 캡 표면의 Sn코팅층을 리플로우 처리한 Cu머쉬룸 범프 접속부에서는 접속저항이 Sn 코팅층의 두께와 리플로우 시간에 크게 의존하였다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2002년도 High Temperature Superconductivity Vol.XII
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• pp.60-60
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• 2002