• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.304-307
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• 2003

Replacement of aluminum by copper for interconnections in the semiconductor industry has raised a number of important issues. The integration of copper interconnection can be carried out by CMP(chemical mechanical polishing) is used to planarize the surface topography. In this experiments, we evaluated the optimization of several conditions for chemical additives during Cu CMP process. It was presented that the main cause of grown particle size is tartaric acid. The particle size was in inverse propotion to a quantity of bead and the time of milling process. The slurry stabilizer and oxidizer have been shown to have very good effect by addition in later milling process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.213-217
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• 2007

Copper has been used as an interconnect material in the fabrication of semiconductor devices, because of its higher electrical conductivity and superior electro-migration resistance. Chemical mechanical polishing(CMP) technique is required to planarize the overburden Cu film in an interconnect process. Various problems such as dishing, erosion, and delamination are caused by the high pressure and chemical effects in the Cu CMP process. But these problems have to be solved for the fabrication of the next generation semiconductor devices. Therefore, new process which is electro-chemical mechanical polishing(ECMP) or electro-chemical mechanical planarization was introduced to solve the technical difficulties and problems in CMP process. In the ECMP process, Cu ions are dissolved electrochemically by the applying an anodic potential energy on the Cu surface in an electrolyte. And then, Cu complex layer are mechanically removed by the mechanical effects between pad and abrasive. This paper focuses on the manufacturing of ECMP system and its process. ECMP equipment which has better performance and stability was manufactured for the planarization process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.653-654
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• 2005

Stick-slip friction is one of the material removal mechanisms in tribology. This stick-slip friction occurs when the static friction force is larger than the dynamic friction force, and make the friction curve fluctuated. In the friction force monitoring system for chemical mechanical polishing(CMP), the friction force also vibrates just as stick-slip friction. It seems that the stick-slip friction causes scratches on the surface of moving parts. In this paper, A study on the scratches which occur during copper CMP was conducted in a view of stick-slip friction.

• Journal of the Korean Society for Precision Engineering
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• v.34 no.2
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• pp.101-106
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• 2017

The chemical mechanical planarization (CMP) process combines the chemical effect of slurry with the mechanical effect of abrasive (slurry)-wafer-pads The slurry delivery system has a notable effect on polishing results, because the slurry distribution is changed by the supply method. Thus, the investigation of slurry pumps and nozzles with regard to the slurry delivery system becomes important. This paper investigated the effect of a centrifugal slurry pump on a spray nozzle system in terms of uniform slurry supply under a rotating copper (Cu) wafer, based on experimental results and computational fluid dynamics (CFD). In conventional tools, the slurry is unevenly and discontinuously supplied to the pad, due to a pulsed flow caused by the peristaltic pump and distributed in a narrow area by the tube nozzle. Adopting the proposed slurry delivery system provides a higher uniformity and lowered shear stress than usual methods. Therefore, the newly developed slurry delivery system can improve the CMP performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.17-21
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• 2011

Copper (Cu) had been attractive material due to its superior properties comparing to other metals such as aluminum or tungsten and considered as the best metal which can replace them as an interconnect metal in integrated circuits. CMP (Chemical Mechanical Polishing) technology enabled the production of excellent local and global planarization of microelectronic materials, which allow high resolution of photolithography process. Cu CMP is a complex removal process performed by chemical reaction and mechanical abrasion, which can make defects of its own such as a scratch, particle and dishing. The abrasive particles remain on the Cu surface, and become contaminations to make device yield and performance deteriorate. To remove the particle, buffing cleaning method used in post-CMP cleaning and buffing is the one of the most effective physical cleaning process. AE(Acoustic Emission) sensor was used to detect dynamic friction during the buffing process. When polishing is started, the sensor starts to be loaded and produces an electrical charge that is directly proportional to the applied force. Cleaning efficiency of Cu surface were measured by FE-SEM and AFM during the buffing process. The experimental result showed that particles removed with buffing process, it is possible to detect the particle removal efficiency through obtained signal by the AE sensor.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.6
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• pp.1401-1406
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• 2014

Knowledge of the manufacturing process of semiconductor devices in order to obtain a copper pattern using chemical mechanical polishing (CMP) planarization using a Wafer polishing process is applied with a thickness of the copper measured in real time, which need to be precisely controlled by, where the acquisition the actual thickness of the sensor value with the calculated value in terms of error can occur in the process. Approximated the actual measurement values so as to obtain a method using a simple average, moving average, compared to the results using filters onggo Strom real-time measurements of the thickness of the units of the control system to reduce the variation in the implementation of the method described for the.

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.19.2-19.2
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• 2006

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.29-32
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• 2005

Chemical mechanical polishing is an essential process in the production of copper-based chips. On this work, the stability of hydrogen peroxide ($H_{2}O_{2}$) as an oxidizer of copper CMP slurry has been investigated. $H_{2}O_{2}$ is known as the most common oxidizer in copper CMP slurry. But $H_{2}O_{2}$ is so unstable that its stabilization is needed using as an oxidizer. As adding KOH as a pH buffering agent, stability of $H_{2}O_{2}$ decreased. However, $H_{2}O_{2}$ stability in slurry went up with putting in small amount of BTA as a film forming agent. There was no difference of $H_{2}O_{2}$ stability between pH buffering agents KOH and TMAH at similar pH value. Addition of $H_{2}O_{2}$ in slurry in advance of bead milling led to better stability than adding after bead milling. Adding phosphoric acid resulted in the higher stability. Using alumina C as an abrasive was good at stabilizing for $H_{2}O_{2}$.

• Korean Chemical Engineering Research
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• v.53 no.4
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• pp.517-523
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• 2015

As the aluminum (Al) metallization process was replaced with copper (Cu), the damascene process was introduced, which required the planarization step to eliminate over-deposited Cu with Chemical Mechanical Polishing (CMP) process. In this study, the verification of the corrosion inhibitors, one of the Cu CMP slurry components, was conducted to find out the tendency regarding the carboxyl and amino functional group in neutral environment. Through the results of etch rate, removal rate, and chemical ability of corrosion inhibitors based on 1H-1,2,4-triazole as the base-corrosion inhibitor, while the amine functional group presents high Cu etching ability, carboxyl functional group shows lower Cu etching ability than base-corrosion inhibitor which means that it increases passivation effect by making strong passivation layer. It implies that the corrosion inhibitor with amine functional group was proper to apply for 1st Cu CMP slurry owing to the high etch rate and with carboxyl functional group was favorable for the 2nd Cu CMP slurry due to the high Cu removal rate/dissolution rate ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.38-41
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• 2004

The oxidizer plays an important role in the metal chemical mechanical polishing(CMP) slurry. Currently, the oxidizer used in CMP slurry is nearly divided into several kinds such as $Fe(NO_3)_3$, $H_2O_2$, $KIO_3$, and $H_5IO_6$. It is generally known that oxidizer character of $H_2O_2$ is more effective than other oxidizers. In this work, we have been studied the characteristics for the $H_2O_2$ concentration of copper slurry, which can applicable in the recent semiconductor manufacturing process. Also, it plays an important role in the planarization of copper films using copper slurries during micro-electronic device fabrication. In this work, we confirmed that removal rate of Cu/TaN changed by $H_2O_2$ concentration on copper slurry. And we used $KMnO_4$ in the measurement method of $H_2O_2$. In analysis results, we confirmed that the difference of results is large. We thought that the difference was due to organic component existence. So in titration method of $H_2O_2$ concentration, we used $Na_2S_2O_3$ instead of $KMnO_4$ as solution. Consequently, using the titration method, we could calculate correct data reduced error. And $H_2O_2$ concentration has been adjusted to the target concentration of 0.1 wt%.