• Journal of the Microelectronics and Packaging Society
• /
• v.22 no.4
• /
• pp.7-14
• /
• 2015

Research and application of three dimensional packaging technology in electronics have been increasing according to the trend of high density, high capacity and light weight in electronics. In this paper, TSV fabrication and research trend in three dimensional packaging are reported. Low alpha solder bumping which can solve the soft error problem in electronics is also introduced. In detail, this paper includes fabrication of TSV, functional layers deposition, Cu filling in TSV by electroplating using PPR (periodic pulse reverse) and 3 step PPR processes, and low alpha solder bumping on TSV by solder ball. TSV and low alpha solder bumping technologies need more studies and improvements, and the drawbacks of three dimensional packaging can be solved gradually through continuous attentions and researches.

• Korean Journal of Materials Research
• /
• v.11 no.3
• /
• pp.185-190
• /
• 2001

The effect of neutral ligand(L) on the precursor characteristics of (hfac)Cu(I)-L and on Cu MOCVD Process was studied. The neutral ligands of (hac)Cu(I)-L$_{x}$, such as ATMS(allytrimethylsilane), VTMS(vinyltrimethylsilane), VCH(vinylcyclohexane), MP(4-methyl-1-pentene), ACP(allylcyclopentane), and DMB(3,3-dimethyl-1-butene) were investigated. When the dissociation temperature of Cu(I)-L bond is low, low temperature deposition below $100^{\circ}C$ is possible and the resistivity of the film is low. But thermal stability of the precursor is low in this case. The resistivity is almost the same regardless of L at the deposition temperature range of $125~175^{\circ}C$. The resistivity is increased as the molecular weight of L becomes higher above $225^{\circ}C$ The vapor pressure of the precursor was closely related to the boiling point of L, the lower the boiling point of L, the higher the vapor pressurere.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.252-255
• /
• 2004

반도체는 high integrated, high speed, low power를 위하여 design 뿐만 아니라 재료 측면에서도 많은 변화를 가져오고 있으며, RC delay time을 줄이기 위하여 Al 배선보다 비저항이 낮은 Cu와 low-k material 적용이 그 대표적인 예이다. 그러나, Cu 배선의 경우 dry etching이 어려우므로, 기존의 공정으로는 그 한계를 가지므로 damascene 또는 dual damascene 공정이 소개, 적용되고 있다. Damascene 공정은 절연막에 photo와 RIE 공정을 이용하여 trench를 형성시킨 후 electrochemical plating 공정을 이용하여 trench에 Cu를 filling 시킨다. 이후 CMP 공정을 이용하여 절연막 위의 Cu와 barrier material을 제거함으로서 Cu 배선을 형성하게 된다. Dual damascene 공정은 trench와 via를 동시에 형성시키는 기술로 현재 대부분의 Cu 배선 공정에 적용되고 있다. Cu CMP는 기존의 metal CMP와 마찬가지로 oxidizer를 이용한 Cu film의 화학반응과 연마 입자의 기계가공이 기본 메커니즘이다. Cu CMP에서 backside pressure 영향이 uniformity에 미치는 영향을 살펴보았으며, electrochemical plating 공정에서 발생하는 hump가 CMP 결과에 미치는 영향과 dishing 결과를 통하여 그 영향을 평가하였다.

• Korean Journal of Materials Research
• /
• v.20 no.2
• /
• pp.90-96
• /
• 2010

The recirculating electrochemical flow reactor developed at UCLA has been employed to fabricate nanostructured GMR multilayers. For comparison, Ni/Cu multilayers have been electrodeposited from a single bath, from dual baths and from the recirculating electrochemical flow reactor. For a magnetic field of 1.5 kOe, higher GMR (Max. -5%) Ni/Cu multilayers with low electrical resistivity (< $10\;{\mu}{\Omega}{\cdot}cm$) were achieved by the electrochemical flow reactor system than by the dual bath (Max. GMR = -4.2% and < $20\;{\mu}{\Omega}{\cdot}cm$) or the single bath (Max. GMR = -2.1% and < $90\;{\mu}{\Omega}{\cdot}cm$) techniques. Higher GMR effects have been obtained by producing smoother, contiguous layers at lower current densities and by the elimination of oxide film formation by conducting deposition under an inert gas environment. Our preliminary GMR measurements of Ni/Cu multilayers from the electrochemical flow reactor obtained at low magnetic field of 0.15 T, which may approach or exceed the highest reported results (-7% GMR) at magnetic fields > 5 kOe.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.4
• /
• pp.328-332
• /
• 2011

The formation of front metal contact silicon solar cells is required for low cost, low contact resistance to silicon surface. One of the front metal contacts is Ni/Cu plating that it is available to simply and inexpensive production to apply mass production. Ni is shown to be a suitable barrier to Cu diffusion into the silicon. The process of Ni electroless plating on front silicon surface is performed using a chemical bath. Additives and buffer agents such as ammonium chloride is added to maintain the stability and pH control of the bath. Ni deposition rate is found to vary with temperature, time, utilization of bath. The experimental result shown that Ni layer by SEM (scanning electron microscopy) and EDX analysis. Finally, plated Ni/Cu contact solar cell result in an efficiency of 17.69% on $2{\times}2\;cm^2$, Cz wafer.

• Journal of the Microelectronics and Packaging Society
• /
• v.29 no.2
• /
• pp.73-79
• /
• 2022

In this study, a reaction study between Ga, which has recently been spotlighted as a low-temperature bonding material, and Cu, a representative electrode material, was conducted to investigate information necessary for low-temperature soldering applications. Interfacial reaction and intermetallic compound (IMC) growth were observed and analyzed by reacting Ga and Cu/Au substrates in the temperature range of 80-200℃. The main IMC growing at the reaction interface was CuGa₂ phase, and AuGa₂ IMC with small particle sizes was formed on the upper part and Cu₉Ga₄ IMC with a thin band shape on the lower part of the CuGa₂ layer. CuGa₂ particles showed a scallop shape, and the particle size increased without significant shape change as the reaction time increased, similar to the case of Cu₆Sn₅ growth. As a result of analyzing the CuGa₂ growth mechanism, the time exponent was calculated to be ~3.0 in the temperature range of 120-200℃, and the activation energy was measured to be 17.7 kJ/mol.

• Journal of the Korean Ceramic Society
• /
• v.53 no.6
• /
• pp.682-688
• /
• 2016

In $TiO_2$-CuO systems, low-temperature sinterability was investigated by a conventional sintering method. Sintering temperatures were set at under $950^{\circ}C$, at which the volume diffusion is inactive. The temperatures are less than the melting point of Ag ($961^{\circ}C$), which is often used as an internal conductor in low-temperature co-fired ceramic technology. To optimize the amount of CuO dopant, various dopant contents were added. The optimum level for enhanced densification was 2 wt% CuO. Excess dopants were segregated to the grain boundaries. The segregated dopants supplied a high diffusion path, by which grain boundary diffusion improved. At lower temperatures in the solid state region, grain boundary diffusion was the principal mass transport mechanism for densification. The enhanced grain boundary diffusion, therefore, improved densification. In this regard, the results of this study prove that the sintering mechanism was the same as that of activated sintering.

• Korean Journal of Materials Research
• /
• v.23 no.7
• /
• pp.385-391
• /
• 2013

The influence of Cu and Ni on the ductile-brittle transition behavior of metastable austenitic Fe-18Cr-10Mn-N alloys with N contents below 0.5 wt.% was investigated in terms of austenite stability and microstructure. All the metastable austenitic Fe-18Cr-10Mn-N alloys exhibited a ductile-brittle transition behavior by unusual low-temperature brittle fracture, irrespective of Cu and/or Ni addition, and deformation-induced martensitic transformation occasionally occurred during Charpy impact testing at lower temperatures due to reduced austenite stability resulting from insufficient N content. The formation of deformation-induced martensite substantially increased the ductile-brittle transition temperature(DBTT) by deteriorating low-temperature toughness because the martensite was more brittle than the parent austenite phase beyond the energy absorbed during transformation, and its volume fraction was too small. On the other hand, the Cu addition to the metastable austenitic Fe-18Cr-10Mn-N alloy increased DBTT because the presence of ${\delta}$-ferrite had a negative effect on low-temperature toughness. However, the combined addition of Cu and Ni to the metastable austenitic Fe-18Cr-10Mn-N alloy decreased DBTT, compared to the sole addtion of Ni or Cu. This could be explained by the fact that the combined addition of Cu and Ni largely enhanced austenite stability, and suppressed the formation of deformation-induced martensite and ${\delta}$-ferrite in conjunction with the beneficial effect of Cu which may increase stacking fault energy, so that it allows cross-slip to occur and thus reduces the planarity of the deformation mechanism.

• Korean Journal of Materials Research
• /
• v.22 no.7
• /
• pp.329-334
• /
• 2012

Two types of nanoclusters, termed Cluster (1) and Cluster (2) here, both play an important role in the age-hardening behavior in Al-Mg-Si alloys. Small amounts of additions of Cu and Ag affect the formation of nanoclusters. Two exothermic peaks were clearly detected in differential scanning calorimetry(DSC) curves by means of peak separation by the Gaussian method in the base, Cu-added, Ag-added and Cu-Ag-added Al-Mg-Si alloys. The formation of nanoclusters in the initial stage of natural aging was suppressed in the Ag-added and Cu-Ag-added alloys, while the formation of nanoclusters was enhanced at an aging time longer than 259.2 ks(3 days) of natural aging with the addition Cu and Ag. The formation of nanoclusters while aging at $100^{\circ}C$ was accelerated in the Cu-added, Ag-added and Cu-Ag-added alloys due to the attractive interaction between the Cu and Ag atoms and the Mg atoms. The influence of additions of Cu and Ag on the clustering behavior during low-temperature aging was well characterized based on the interaction energies among solute atoms and on vacancies derived from the first-principle calculation of the full-potential Korrinaga-Kohn-Rostoker(FPKKR)-Green function method. The effects of low Cu and Ag additions on the formation of nanoclusters were also discussed based on the age-hardening phenomena.

• Clean Technology
• /
• v.8 no.3
• /
• pp.111-117
• /
• 2002

Catalytic decomposition and reduction of NO have been carried out on copper loaded mordenites in a packed bed flow reactor. For the decomposition of NO, $Cu^{\circ}/HM$ exhibited higher activities than CuO/HM at high copper content, which may be related to the difference in the amount of $Cu^{2+}$ ions and the reducibility of CuO between $Cu^{\circ}/HM$ and Cuo/HM. However, $Cu^{\circ}/HM$ showed higher reduction activities than CuO/HM at low copper content. This result may be dependent on the difference in the amount of high-reducibility CuO between $Cu^{\circ}/HM$ and CuO/HM.