• Title/Summary/Keyword: Crystallographic

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Crystallographic Orientation Dependence Of Electrical Properties of Carbon-doped GaAs Grown by Low Pressure Metalorganic Chemical Vapor Deposition Using CBr4 (저압 MOCVD로 CBr4 가스를 사용하여 탄소 도핑된 GaAs 에피층의 결정학적 방향에 따른 전기적 성질의 의존성)

  • 손창식
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.3
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    • pp.214-219
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    • 2002

  • In order to elucidate the crystallographic orientation dependence of electrical properties of carbon (C)-doped GaAs epilayers, C incorporation into GaAs epilayers on high-index GaAs substrates with various crystallographic orientations from (100) to (111)A has been performed by a low pressure metalorganic chemical vapor deposition using C tetrabromide ($CBt_4$) as a C source. The hole concentration of C-doped GaAs epilayers rapidly decreases with a hump at (311)A with increasing the offset angle. Although the growth temperature and the V/III ratio are varied, the crystallographic orientation dependence of hole concentration show a same trend. The above behaviors indicate that the bonding strength of As sites on a glowing surface plays an important role in the C incorporation into the high-index GaAs substrates.

  • https://doi.org/10.4313/JKEM.2002.15.3.214 인용 PDF KSCI

Crystallographic Relationships of (Ba, Sr) $TiO_3$Thin Film Prepared by Metal-Organic Chemical Vapor Deposition on (111) Textured Pt Electrode

  • Yoo, Dong-Chul;Lee, Jeong-Yong
    • Journal of the Korean Ceramic Society
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    • v.37 no.11
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    • pp.1126-1129
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    • 2000

  • The crystallographic orientations of $Ba_{0.6}$S $r_{0.4}$Ti $O_3$(BST) thin film deposited by a metal-organic chemical vapor deposition on (111) textured Pt electrode were studied with a transmission electron microscopy. The fully crystallized BST thin film (50nm) has (100) and (110) preferred orientations. A high resolution transmission electron microscopy study has revealed the crystallographic orientation relationships between BST thin film and Pt electrode. These relationships explained the preferred orientation of BST film on (111) textured Pt electrode. With these results, we could represent the atomic arrangement at the BST/Pt interface.e.e.

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Underlayer effects on crystallographic and magnetic characteristics of Co-Cr(-Ta) layer (Co-Cr(-Ta) 층의 결정성 및 자기적 특성에 미치는 하지층 효과)

  • 금민종;공석현;가출현;손인환;김경환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.208-211
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    • 2000

  • We prepared Co-Cr-Ta and Co-Cr-Ta/Ti thin film for perpendicular magnetic recording media by facing targets sputtering system (FTS system). Ti underlayer effects on crystallographic and magnetic characteristics of Co-Cr-Ta perpendicular magnetic recording media have been investigated. Crystallgraphic and magnetic characteristic of prepared thin films were evaluated by x-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement. The coercivity and anisotropy field increase by introduced Ti underlayer when substrate temperature is higher than 150$^{\circ}C$. The c-axis dispersion angle and grain size of Co-Cr-Ta/Ti thin film is decrease than Co-Cr-Ta when substrate temperature is higher than 100$^{\circ}C$. Consequently, the use of a Ti underlayer highly orientated can be improved crystallographic and magnetic characteristics of Co-Cr -Ta perpendicular media layer.

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The lapping characteristics of single crystal diamond(1st report) -lapping anisotropy of the crystal planes- (단결정 다이아몬드의 연마특성(1)-각 결정면의 연마 이방성-)

  • Jang, Kwang-Kyun;Uegami, Kenjiro;Tamamura, Kentaro
    • Journal of the Korean Society for Precision Engineering
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    • v.10 no.1
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    • pp.147-152
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    • 1993

  • The lapping characteristics of single crystal diamond are studied by considering the crystallographic anisotropy. It is introduced for lapping method to identify crystallographic orientantion by the X-ray diffraction and to measure lapping force ratio, lapping temperature and lapping wear. Diamound bonded wheels are used for lapping under dry condition. On the lapping {110} and {100} planes, it shows remarkable crystallographic anistropy. The lapping force ratio, temperature and wear become gerater with sliding direction along the <100> than along <110>. The results also show that the wear of diamond is influenced by mechanical work(tangential lapping force * lapping distance) as well by lapping speed.

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