• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.183-186
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• 2006

Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layer were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The surface morphology of porous Si layers were investigated using SEM. The formation of a porous Si layer about $0.1{\mu}m$ thick on the textured silicon wafer result in an effective reflectance coefficient $R_{eff}$ lower than 5% in the wavelength region from 400 to 1000nm. Such a surface modification allows improving the Si solar cell characteristics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.492-492
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• 2014

On account of the good conductivity and optical properties, TCO is generally used in silicon heterojunction solar cell since the emitter material, hydrogenated amorphous silicon (a-Si:H), of the solar cell has low conductivity compare to the emitter of crystalline silicon solar cell. However, the work function mismatch between TCO layer and emitter leads to band-offset and interfere the injection of photo-generated carriers. In this study, work function engineering of TCO by oxygen reactive sputtering method was carried out to identify the trend of band-offset change. The open circuit voltage and short circuit current are noticeably changed by work function that effected from variation of oxygen ratio.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.391-391
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• 2011

Crystalline silicon solar cell을 양산에 적용하기 위해 전면 전극의 패턴을 형성하는 방법으로 Ag paste를 이용한 screen printing이 가장 일반적으로 사용된다. 전면 전극의 패턴 형성 시, Finger의 width와 spacing은 Fill factor, JSC, VOC 등 태양전지의 중요 parameter들과 관련되어, 효율에 영향을 미치기 때문에, printing 시 Finger width와 spacing을 최적화하여 최대한의 효율을 내는 조건을 찾는 것이 바람직하다. 본 연구에서는 Finger width를 $30{\mu}m{\sim}100{\mu}m$, spacing을 $1.8{\mu}m{\sim}2.8{\mu}m$ 까지 가변하여 c-Si solar cell을 제작하였으며, 제작된 cell의 LIV를 측정을 통하여, 최적의 효율을 내는 조건을 찾고자 하였다. 그 결과 Finger width $30{\mu}m$, Finger spacing $1.8{\mu}m$의 조건에서 17.12%로 최고의 효율을 나타내었다.

• 한국진공학회지
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• 제21권1호
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• pp.62-68
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• 2012

건재 일체형 태양광발전(BIPV) 응용을 위해 광 입사각에 따른 태양전지의 변환 효율은 중요하다. 양자효율은 태양전지의 파장별 전자 수집효율을 말하며, 입사각별 양자효율 측정으로 입사각에 따른 태양전지 출력 변화 요인을 분석할 수 있다. 이러한 입사각별 양자효율은 태양전지 종류에 따라 차이를 보인다. 본 연구에서는 가장 많이 쓰이는 벌크형 단결정 실리콘 태양전지와 박막형 비정질 실리콘 태양전지의 입사각별 양자효율을 비교하였다. 그 결과, 단결정 실리콘 태양전지에서는 광 입사각이 증가함에 따라 전 파장영역에서 양자효율이 감소했다. 반면, 비정질 박막 실리콘 태양전지에서는 단파장 영역에서는 결정질 실리콘과 동일하게 감소하였으나, 그 이후의 흡수 영역에서 약 $40^{\circ}$의 입사각까지 증가 또는 일정한 양자효율을 보이다가 이후에 급격히 감소하는 결과를 얻었다. 이는 비정질 박막 실리콘 태양전지에서 입사각이 증가함에 따라 특정 파장 영역에서 산란과 박막 구조의 영향으로 예상된다. 따라서, 태양전지의 구조 및 광학 구조 최적화 등으로 BIPV 적용에 유리한 구조 태양전지 제작이 가능할 것으로 보인다.

• 한국전기전자재료학회논문지
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• 제26권10호
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• pp.754-759
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• 2013

Aluminum oxide($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surfaces. Since $Al_2O_3$ has fixed negative charge, it forms effective surface passivation by field effect passivation on the rear side in p-type silicon solar cell. However, $Al_2O_3$ layer formed by ALD process needs very long process time, which is not applicable in mass production of silicon solar cells. In this paper, plasma-assisted ALD(PA-ALD) was applied to form $Al_2O_3$ to reduce the process time. $Al_2O_3$ synthesized by ALD on c-Si (100) wafers contains a very thin interfacial $SiO_2$ layer, which was confirmed by FTIR and TEM. To improve passivation quality of $Al_2O_3$ layer, the deposition temperature was changed in range of $150{\sim}350^{\circ}C$, then the annealing temperature and time were varied. As a result, the silicon wafer with aluminum oxide film formed in $250^{\circ}C$, $400^{\circ}C$ and 10 min for the deposition temperature, the annealing temperature and time, respectively, showed the best lifetime of 1.6ms. We also observed blistering with nanometer size during firing of $Al_2O_3$ deposited on p-type silicon.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.367-367
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• 2011

CIGS solar cell with copper, indium, gallium and selenium is a second generation solar cells for the lowering of the manufacturing cost. The relative ratio of the four elements is one of the most important measurement issues because the photovoltaic property of CIGS solar cell depends on the crystalline structure of the CIGS layer. However, there is no useful analysis method for the composition of the CIGS layer. Recently, AES depth profiling analysis of CIGS films has been studied with a reference material certified by inductively coupled plasma optical emission spectroscopy. However, there are some problems in AES depth profiling analysis of CIGS films. In this study, the in-depth profiling analysis was investigated by secondary ion mass spectrometry (SIMS) depth profiling analysis. We will present the compositional depth profiling of CIGS films by SIMS and its applications for the development of CIGS solar cells with high efficiency.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.419-420
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• 2009

The authors fabricated the nanostructural patterns on the surface of SiN antireflection layer of polycrystalline Si solar cell and the surface of crystalline Si wafer using anodic aluminum oxide (AAO) masks in an inductively coupled plasma(ICP) etching process. The AAO nanopattern mask has the hole size of about 70~80nm and an ave rage lattice constant of 100nm. The transferred nano-patterns were observed by the scanning electron microscope (SEM) and the enhancement of solar cell efficiency will be presented.

• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.321-326
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• 2016

Minimizing the carrier recombination and electrical loss through surface passivation is required for high efficiency c-Si solar cell. Usually, $SiN_X$, $SiO_X$, $SiON_X$ and $AlO_X$ layers are used as passivation layer in solar cell application. Silicon oxide layer is one of the good passivation layer in Si based solar cell application. It has good selective carrier, low interface state density, good thermal stability and tunneling effect. Recently tunneling based passivation layer is used for high efficiency Si solar cell such as HIT, TOPCon and TRIEX structure. In this paper, we focused on silicon oxide grown by various the method (thermal, wet-chemical, plasma) and passivation effect in c-Si solar cell.

• 한국태양에너지학회 논문집
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• 제31권1호
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• pp.37-43
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• 2011

In this paper, the optimized doping condition of crystalline silicon solar cells with $156{\times}156\;mm^2$ area was studied. To optimize the drive-in temperature in the doping process, the other conditions except variable drive-in temperature were fixed. These conditions were obtained in previous studies. After etching$7\;{\mu}m$ of the surface to form the pyramidal structure, the silicon nitride deposited by the PECVD had 75~80nm thickness and 2 to 2.1 for a refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in 400-425-450-550-$850^{\circ}C$ five-zone temperature conditions to make the ohmic contact. Drive-in temperature was changed in range of $830^{\circ}C$ to $890^{\circ}C$to obtain the sheet resistance $30{\sim}70\;{\Omega}/{\box}$ with $10\;\Omega}/{\box}$ intervals. Solar cell made in $890^{\circ}C$ as the drive-in temperature revealed 17.1% conversion efficiency which is best in this study. This solar cells showed $34.4\;mA/cm^2$ of the current density, 627 mV of the open circuit voltage and 79.3% of the fill factor.

• 한국전기전자재료학회논문지
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• 제29권8호
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• pp.455-460
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• 2016

A textured front surface is required in high efficiency silicon solar cells to reduce reflectance and to improve light trapping. Wet etching with alkaline solution is usually applied for mono crystalline silicon solar cells. However, alkali texturing method is not appropriate for multi-crystalline silicon wafers due to grain boundary of random crystallographic orientation. Accordingly, acid texturing method is generally used for multi-crystalline silicon wafers to reduce the surface reflectance. To reduce reflectivity of multi-crystalline silicon wafers, double texturing method with combination of acid and reactive ion etching is an attractive technical solution. In this paper, we have studied to optimize RIE condition by different RF power condition (100, 150, 200, 250, 300 W).