• 제목/요약/키워드: Critical electric field

검색결과 173건 처리시간 0.031초

원자간력 현미경(AFM)과 펨토초 펄스 레이저를 이용한 나노 형상 가공 (AFM-based nanofabrication with Femtosecond pulse laser radiation)

  • 김승철;김승우
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2006년도 춘계학술대회 논문집
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    • pp.149-150
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    • 2006
  • We describe a novel method of scanning probe nanofabrication using a AFM(atomic force microscopy) tip with assistance of Femtosecond laser pulses to enhance fabrication capability. Illumination of the AFM tip with ultra-short light pulses induces a strong electric field between the tip and the metal surface, which allows removing metal atoms from the surface by means of field evaporation. Quantum simulation reveals that the field evaporation is triggered even en air when the induced electric field reaches the level of a few volts per angstrom, which is low enough to avoid unwanted thermal damages on most metal surfaces. For experimental validation, a Ti: sapphire Femtosecond pulse laser with 10 fs pulse duration at 800 nm center wavelength was used with a tip coated with gold to fabricate nanostructures on a thin film gold surface. Experimental results demonstrate that fine structures with critical dimensions less than ${\sim}10nm$ can be successfully made with precise control of the repetition rate of Femtosecond laser pulses.

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고내압 전력 스위칭용 AlGaN/GaN-on-Si HEMT의 게이트 전계판 구조 최적화에 대한 이차원 시뮬레이션 연구 (Two-dimensional Simulation Study on Optimization of Gate Field Plate Structure for High Breakdown Voltage AlGaN/GaN-on-Si High Electron Mobility Transistors)

  • 이호중;조준형;차호영
    • 대한전자공학회논문지SD
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    • 제48권12호
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    • pp.8-14
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    • 2011
  • 본 논문에서는 이차원 소자 시뮬레이션을 활용하여 주어진 게이트-드레인 간격에서 AlGaN/GaN-on-Si HEMT (high electron mobility transistor) 의 고항복전압 구현을 위한 게이트 전계판의 최적화 구조를 제안하였다. 게이트 전계판 구조를 도입하여 게이트 모서리의 전계를 감소시켜 항복전압을 크게 증가시킬 수 있음을 확인 하였으며, 이때 전계판의 길이와 절연막의 두께에 따라 게이트 모서리와 전계판 끝단에서 전계분포의 변화를 분석하였다. 최적화를 위하여 시뮬레이션을 수행한 결과, 1 ${\mu}m$ 정도의 짧은 게이트 전계판으로도 효과적으로 게이트 모서리의 전계를 감소시킬 수 있으며 전계판의 길이가 너무 길어지면 전계판과 드레인 사이의 남은 길이가 일정 수준 이하로 감소되어 오히려 항복전압이 급격하게 감소함을 보였다. 전 계판의 길이가 1 ${\mu}m$ 일 때 최대 항복전압을 얻었으며, 게이트 전계판의 길이를 1 ${\mu}m$로 고정하고 $SiN_x$ 박막의 두께를 변화시켜본 결과 게이트 모서리와 전계판 끝단에서의 전계가 균형을 이루면서 항복전압을 최대로 할 수 있는 최적의 $SiN_x$ 박막 두께는 200~300 nm 인 것으로 나타났다.

송전선로용 고전압 절연체의 최적 형상에 대한 유한요소 해석 (Finite Element Analysis for the Optimal Shape of the High Voltage Insulator for Power Transmission Lines)

  • 김태용;산얄 심피;라벨로 마데우스;이준신
    • 한국전기전자재료학회논문지
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    • 제35권1호
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    • pp.66-71
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    • 2022
  • The insulator used for the transmission line is a device that is bonded with a cap, pin, ceramic, and cement to withstand insulation capacity and mechanical load. The insulator design can help to reduce the dispersion of the electric field; thus, the optimization of today's design, especially as demanded power grows, is critical. The designs of four manufacturers were used to perform a comparative analysis. Under dry circumstances of the new product, an electric field distribution study was done with no pollutants attached. Manufacturer D's design has the best voltage uniformity of 24.33% and the arc length of 500 mm or more. Manufacturer C's design has an equalizing voltage of more than 2% higher than that of other manufacturers. The importance of the design of the insulator and the number of connections according to the installation conditions is very efficient for transmission lines that will increase in the future.

형광등 Positive column에 대한 자장인가 효과 (Magnetic field effect on the positive column of fluorescent lamp)

  • 지철근;김창종
    • 전기의세계
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    • 제31권3호
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    • pp.197-203
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    • 1982
  • The effects on the characteristics of 20-W fluorescent lamp were studied when applying magnetic field to its positive column. First, when the direction of the magnetic field is axial, i.e., along the lamp, if the magnitude of the field is stronger than the critical field, lamp voltage is increased, lamp current decreased, luminous flux increased, starting voltage decreased, as increasing the applied magnetic field. At the magnetic flux density is 130 gauss, luminous flux is increased to about 6 percents and starting voltage is increased to about 45 percents. Second, when the direction of the magnetic field is transverse to the lamp axis, as increasing the applied magnetic field, lamp voltage is increased, lamp current decreased, luminous flux increased and starting voltage is nearly constant, but the rates of increase or decrease of this case is different from those of the first. At the magnetic flux density is 300 gauss, luminous flux is increased about 45 percents. In both cases, electric power dissipated by lamps is the same as that of the lamp which magnetic field is not applied to.

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Effects of Dispersed Carbon nanotubes on Electro-Optic Characteristics and Orientation of Liquid Crystal in the In-Plane Switching Cell

  • Baik, I.S.;Jeon, S.Y.;Choi, J.Y.;Lee, S.H.;Lee, J.Y.;An, K.H.;Lee, Y.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.415-418
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    • 2005
  • To understand effects of carbon nanotubes (CNTs) dispersed in nematic liquid crystal (NLC) on electro-optic characteristic and orientation of the LC, we CNT-doped homogeneously-aligned NLC cells driven by in-plane field have been fabricated. The CNTs were aligned with a LC director from the initial state to below critical ac field, whereas the CNTs disturbed the LC director field above critical ac field. We observed motional textures in the form of vertical stripes in the local area between electrodes, which were associated with a deformation of the LC director orientation. This indicates that CNTs start vibrating three dimensionally with translational motion. Further, the hysterisis studies of voltage-dependent transmittance under dc electric field show that the amount of residual dc, which is related to image sticking problem in liquid crystal displays, is greatly reduced due to ion trapping by CNTS while keeping operating voltage and response time about the same compared to the un-doped LC cell.

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고온 초전도 선재의 굽힘횟수와 온도차에 의한 임계전류저하특성 (Critical Current Degradation Characteristics by Temperature Difference of L$N_2$-Normal in Repetitive Bending Strain of High Temperature Superconducting Tape)

  • 김해준;김석환;송규정;김해종;배준한;조전욱;성기철
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 2003년도 추계학술대회 논문집
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    • pp.274-277
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    • 2003
  • Critical current(Ic) degradation of HTS tapes after bending is one of the hottest issues in HTS development and application studies. Many people are measuring Ic degradations for effect of bending radius. However even if the bending radius is larger than the breaking radius a HTS tapes can be damaged by repetitive bending, which is unavoidable in the winding processes. Therefore, We studied the Ic degradation after repetitive bending. at 77K with self-field, of Bi-2223 tapes processed by "Powder-in-Tube" technique, which was made by America Superconductor Corporation(AMSC) and superconductiing tapes that strain is imposed measured critical current by temperature difference of L$N_2$ and normal temperature. Like this, critical current could measure that degradation about 1~3% by temperature difference. These results will amount the most important basis data in power electric machine of superconductivity cable, magnet, etc that winding work is require.

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Field Emission Enhancement by Electric Field Activation in Screen-printed Carbon Nanotube Film

  • Lee, Hyeon-Jae;Lee, Yang-Doo;Cho, Woo-Sung;Kim, Jai-Kyeong;Hwang, Sung-Woo;Ju, Byeong-Kwon
    • Journal of Information Display
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    • 제6권4호
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    • pp.45-48
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    • 2005
  • By applying a critical field treatment instead of the conventional surface treatments such as soft rubber roller, ion beam irradiation, adhesive taping, and laser irradiation, electron emission properties of screen-printed carbon nanotubes (CNTs) were enhanced and investigated based on the emission current-voltage characteristics through scanning electron microscopy. After nanotube emitters were activated at the applied electric-field of 2.5 V/um, the electron emission current density with good uniform emission sites reached the value of 2.13 mA/$cm^2$ , which is 400 times higher than that of the untreated sample, and the turn-on voltage decreased markedly from 700 to 460 V. In addition, enhancement of the alignment of CNTs to the vertical direction was observed.

Existence of a vortex-glass phase transition in an optimally doped BaFe1.8Co0.2As2 single crystal

  • Choi, Ki-Young;Kim, Kee Hoon
    • 한국초전도ㆍ저온공학회논문지
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    • 제15권2호
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    • pp.16-19
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    • 2013
  • The magneto-resistivity and electric field-current density (E-J) curves were investigated up to a magnetic field 9 T in the optimally doped $BaFe_{1.8}Co_{0.2}As_2$ single crystal with a superconducting temperature ($T_c$) of 24.6 K. The E-J Scaling behaviors below and above vortex glass transition temperature ($T_g$) were found, confirming the existence of the vortex glass phase transition. The critical exponents for the diverging spatial and time correlations at $T_g$, were obtained as v = $1.1{\pm}0.1$ and z = $4.5{\pm}0.3$, respectively. The obtained critical exponents are in good agreement with the predicted values of v ~ 1 - 2 and z > 4 within the 3D vortex glass theory.

단일 Floating Island 구조 Power MOSFET의 전기적 특성 향상과 설계 파라미터에 관한 연구 (A Study on Electrical Characteristic Improvement & Design Parameters of Power MOSFET with Single Floating Island Structure)

  • 조유습;성만영
    • 한국전기전자재료학회논문지
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    • 제28권4호
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    • pp.222-228
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    • 2015
  • Power MOSFETs (metal oxide semiconductor field effect transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device, it is essential to increase its conductance. However, a trade-off relationship between the breakdown voltage and conductance of the device have been the critical difficulty to improve. In this paper, theoretical analysis of electrical benefits on single floating island power MOSFET is proposed. By the method, the optimization point has set defining the doping limit under single floating island structure. The numerical multiple 2.22 was obtained which indicates the doping limit of the original device, improving its ON state voltage drop by 45%.

1세대 선재와 2세대 선재의 혼합 적층에 따른 자화손실 특성 (Magnetization loss of Hybrid Multi-Stacked wire made of 1G wires and 2G wires)

  • 임형우;이용석;이희준;차귀수
    • 한국초전도ㆍ저온공학회논문지
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    • 제9권1호
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    • pp.57-60
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    • 2007
  • Superconducting electric power devices need to stack HTS wires to increase the current carrying capacity. Uniform multi-stacked wires(UMS) which were made of the same HTS wires have been used. This paper shows the magnetization loss of hybrid multi-stacked(HMS) wire made of BSCCO wires and YBCO wires. Five HMS wires, YB(YBCO-BSCCO), YYBB. YBYB, YBBY and BYYB, were made and tested. Magnetization losses of each UMS wire were compared with corresponding HMS wire. Test results show that magnetization losses per unit length of HMS wire are between the corresponding UMS BSCCO wire and HMS YBCO wire below critical magnetic field. Above the critical magnetic field, magnetization losses of HMS wires are larger than that of corresponding both VMS wires.