• 한국재료학회지
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• 제20권5호
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• pp.257-261
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• 2010

A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

• 한국재료학회지
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• 제20권5호
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• pp.241-245
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• 2010

One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.30.1-30.1
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• 2007

• Journal of Magnetics
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• 제8권4호
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• pp.142-145
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• 2003

Valence states and electronic structures of Cr-doped $Nd_{1/2}A_{1/2}Mn_{1-y}Cr_{y}O_3$(NAMO; A=Ca, Sr) manganites have been investigated using x-ray absorption spectroscopy (XAS) and high-resolution photoemission spectroscopy (PES). All the Cr-doped NAMO systems exhibit the clear metallic Fermi edges in the Mn $e_{g}$ PES spectra near $E_{F}$. The spectral intensity at $E_{F}$ is higher for Cr-doped N $d_{l}$ 2/S $r_{l}$ 2/Mn $O_3$(NSMO) than for Cr-doped N $d_{l}$ 2/C $a_{l}$ 2/Mn $O_3$ (NCMO), reflecting the stronger metallic nature for NSMO than for NCMO. The measured Cr 2p XAS spectra are found to be very similar to that of C $r_2$ $O_3$, indicating that Cr ions in Cr-doped NAMO are in the trivalent C states ( $t^3$$_{2g}$). The Cr 2p XAS data are consistent with the Cr 3d PES spectra located at ∼1.3 eV below $E_{F}$ and having no emission near $E_{F}$.

• 한국세라믹학회지
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• 제47권5호
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• pp.450-456
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• 2010

During the process of synthesizing green celsian pigments, attempts were made to replace a given amount of $BaCO_3$ with $SrCO_3$ to accelerate the hexagonal to monoclinic celsian phase transition, which was assumed to promote color development. Monoclinic celsian have been synthesized from Hongkong-Kaolin, $BaCO_3$, $SrCO_3$, $Al(OH)_3$, $SiO_2$ and $SrCO_3$ with 1 to 1.5 wt% of LiF as a mineralizer from 1100 to $1300^{\circ}C$. It was found that replacing $BaCO_3$ with $SrCO_3$ allowed monoclinic celsian to be formed at a lower temperature. While the pigments containing 1 mole of $BaCO_3$ were difficult to synthesize monoclinic celsian with absence of the mineralizer, the formation of monoclinic celsian was successfully achieved even without mineralizer by using 0.25 mole of $SrCO_3$ at $1250^{\circ}C$ for 1 h. The color development was improved from yellowish green to green with increasing amount of $SrCO_3$ being replaced.

• 전기화학회지
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• 제8권4호
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• pp.162-167
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• 2005

본 연구는 Pechini법을 이용하여 Ca과 Sr이 도핑된 $LaCrO_3$계의 $La_{0.6}Ca_{0.41}CrO_3$ (LCC41), $La_{0.8}Sr_{0.05}Ca_{0.15}CrO_3$, (LSCC), $La_{0.75}Ca_{0.27}CrO_3$ (LCC27) 분말들을 제조하여, 분말의 소결 특성 및 코팅층의 특성을 조사하였다. 제조된 LCC41, LSCC, LCC27 분말은 각각 0.6, 0.9, $1.5{\mu}m$의 평균 입자크기를 가졌으며, LCC41의 경우 $1400^{\circ}C$에서 98% 이상의 소결 밀도를 나타내었다. 연료극 지지체상의 LSCC 코팅은 LCC41층에 있는 Ca의 이동을 어느 정도 억제하는 역할을 하는 것으로 나타났다. 대기 용사 코팅된 LCC27은 치밀한 코팅막을 형성하였으며, 이 코팅층 위에 LCC41을 습식 코팅할 경우 더욱 치밀하고 높은 전기전도도를 갖는 코팅막을 얻을 수 있었다. 용사코팅된 LCC27, 습식 코팅된 LCC41는 높은 전기전도도를 나타내었으나, LSCC의 경우 낮은 소결성으로 인해 전기전도도가 작게 나타났다.

• Bulletin of the Korean Chemical Society
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• 제23권10호
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• pp.1463-1482
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• 2002

Partially doped Aurivillius phases SrBi2N$b_{2-x}M_xO_9$ (M=Cr and Mo) were successfully synthesized and characterized. The extent of the substitution was limited at ~20 mole % because of the size differences between $Nb^{5+}$ and $Cr^{6+}$, and between $Nb^{5+}$ and $Mo^{6+}$. When the amount of substitution exceeded ~20 mole%, the phases began to collapse and the second phases were made. The dielectric constants of substituted compounds were enlarged nevertheless Cr or Mo is substituted. The increment is bigger in the Mo substituted compound than in the Cr doped one although the Nb(Cr)$O_6$ octahedra could be more strongly distorted than the Nb(Mo)$O_6$ octahedra since the ionic size difference between $Nb^{5+}$ and of $Cr^{6+}$ is much bigger than that between $Nb^{5+}$ and $Mo^{6+}$. Consequently, the dielectric constant of the substituted Aurivillius phase $Bi_2$A_{n-1}B_{n-x}M_xO_{3n+1}$$ depends on the extent of distortion of the B$O_6$ octahedra and more strongly on the polarizability of the metal.

• Korean Chemical Engineering Research
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• 제46권6호
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• pp.1135-1141
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• 2008

고온 수증기 전기분해용 $La_{1-x}(Ca\;or\;Sr)xCrO_3$(x=0 and 0.25) 연결재 재료의 소결도와 전기 전도도에 대해서 연구하였다. 이러한 목적으로 $LaCrO_3$, $La_{0.75}Ca_{0.25}CrO_3$(LCC)와 $La_{0.75}Sr_{0.25}CrO_3$(LSC) 분말들은 공침법을 통해 합성하였으며, 결정구조는 X-Ray Diffraction(XRD)를 통해 확인하였다. 소결 특성은 상대밀도와 주사 전자현미경을 통해 분석하였고 전기 전도도는 직렬 4-단자 법으로 측정하였다. 상대 밀도 분석으로부터 도핑된 $LaCrO_3$는 $LaCrO_3$보다 더 높은 소결성을 나타내었고, 입자 크기가 작을수록 소결성이 향상하는 것을 확인 할 수 있었다. 다양한 소결온도에서 얻은 LCC, LSC 시편들의 XRD 결과는 LCC와 LSC의 소결성이 2차상의 상전이와 밀접한 관련이 있다는 사실을 나타내었다. 다시 말해, LCC는 $1,300^{\circ}C$ 이상, LSC는 $1,400^{\circ}C$ 이상에서 2차상이 융해됨으로써 소결성을 현저하게 향상시킨다는 것을 알 수 있었다. 그리고 비슷한 상대밀도를 가진 LCC와 LSC의 전기 전도도를 비교 측정한 결과, LCC가 LSC보다 더 높은 전기 전도도를 나타낸다는 것을 알 수 있었다.

• 한국세라믹학회지
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• 제44권12호
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• pp.715-719
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• 2007

STS444 with or without $La_{0.9}Sr_{0.1}MnO_3$ (LSM)-coating was contacted to $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_3$ (LSCF) cathode on various electrolyte materials and the polarization resistance $(R_p)$ was measured by impedance spectroscopy. By making a symmetric half-cell and contacting only one side of the cathode with the interconnect, the effect of chromium (Cr) poisoning was separated from the aging effects. When the LSCF cathode was contacted with LSM-coated STS (stainless steel), $R_p$ of LSCF was lower than that contacted with the uncoated STS. Impedance patterns measured for the working electrode (W.E.), the counter electrode (C.E.) at $600^{\circ}C$ in air were analyzed. Normalized data of net Cr effect showed that $Ce_{0.9}Gd_{0.1}O_2$ (GDC) electrolyte is more tolerant to the chromium poisoning than $La_{0.9}Sr_{0.1}Ga_{0.8}Mg_{0.2}$ (LSGM) or 8 mol% $Y_2O_3-doped$ $ZrO_2$ (YSZ) electrolytes.

• 한국결정성장학회지
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• 제28권1호
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• pp.44-50
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• 2018

The improved high-performance Fe-based perovskite-type oxides ($La_{0.7}Sr_{0.3}M_xFe_{1-x}O_3$, M = Cu, Cr, Ni) were synthesized by a citrate method and characterized by SEM, EDS, XRD and NMR spectroscopy analyses. The characterization analyses revealed that the stoichiometric amounts of lattice oxygen were existed in all of perovskite samples except for a nickel-doped perovskite. Fe-based perovskites exhibited a surprising result for ortho-para $H_2$ spin conversion reaction, indicating two orders of magnitude higher conversions and conversion rates than commercial $Fe_2O_3$. It was considered that this conversion difference might be attributed to the presence of oxygen vacancies in Fe-based perovskites prepared in this study.